NL112552C - - Google Patents
Info
- Publication number
- NL112552C NL112552C NL112552DA NL112552C NL 112552 C NL112552 C NL 112552C NL 112552D A NL112552D A NL 112552DA NL 112552 C NL112552 C NL 112552C
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/02—Induction heating
- H05B6/22—Furnaces without an endless core
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B9/00—General processes of refining or remelting of metals; Apparatus for electroslag or arc remelting of metals
- C22B9/003—General processes of refining or remelting of metals; Apparatus for electroslag or arc remelting of metals by induction
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B9/00—General processes of refining or remelting of metals; Apparatus for electroslag or arc remelting of metals
- C22B9/16—Remelting metals
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/002—Crucibles or containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P10/00—Technologies related to metal processing
- Y02P10/25—Process efficiency
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Silicon Compounds (AREA)
- Crucibles And Fluidized-Bed Furnaces (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES53137A DE1159903B (de) | 1957-04-15 | 1957-04-15 | Vorrichtung zum Schmelzen von reinstem Silizium und anderen reinen Halbleiterstoffen |
Publications (1)
Publication Number | Publication Date |
---|---|
NL112552C true NL112552C (ja) | 1900-01-01 |
Family
ID=7489101
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL112552D NL112552C (ja) | 1957-04-15 | ||
NL226823D NL226823A (ja) | 1957-04-15 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL226823D NL226823A (ja) | 1957-04-15 |
Country Status (6)
Country | Link |
---|---|
US (1) | US3051555A (ja) |
CH (1) | CH365545A (ja) |
DE (1) | DE1159903B (ja) |
FR (1) | FR1203822A (ja) |
GB (1) | GB840135A (ja) |
NL (2) | NL226823A (ja) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3404966A (en) * | 1964-09-04 | 1968-10-08 | Northeru Electric Company Ltd | Melting a ferrous ion containing ferrimagnetic oxide in a ferric ion crucible |
US3433602A (en) * | 1966-01-29 | 1969-03-18 | Sharp Kk | Method for growing single crystals |
FR1492063A (fr) * | 1966-04-05 | 1967-08-18 | Commissariat Energie Atomique | Perfectionnement aux fours électriques haute fréquence pour la fabrication en continu de réfractaires électrofondus |
US3437734A (en) * | 1966-06-21 | 1969-04-08 | Isofilm Intern | Apparatus and method for effecting the restructuring of materials |
US3911994A (en) * | 1974-11-08 | 1975-10-14 | Reynolds Metals Co | Utilization of silicon fines in casting |
DE2508803C3 (de) * | 1975-02-28 | 1982-07-08 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Verfahren zur Herstellung plattenförmiger Siliciumkristalle mit Kolumnarstruktur |
US4054641A (en) * | 1976-05-07 | 1977-10-18 | John S. Pennish | Method for making vitreous silica |
US4224100A (en) * | 1978-06-16 | 1980-09-23 | Litton Systems, Inc. | Method and apparatus for making crystals |
US4390379A (en) * | 1981-06-25 | 1983-06-28 | Western Electric Company, Inc. | Elimination of edge growth in liquid phase epitaxy |
US4412502A (en) * | 1981-06-25 | 1983-11-01 | Western Electric Co., Inc. | Apparatus for the elimination of edge growth in liquid phase epitaxy |
JPH04331792A (ja) * | 1991-04-30 | 1992-11-19 | Osaka Titanium Co Ltd | シリコン単結晶製造方法 |
US6126742A (en) * | 1996-09-20 | 2000-10-03 | Forshungszentrum Karlsruhe Gmbh | Method of drawing single crystals |
DE19638563C2 (de) * | 1996-09-20 | 1999-07-08 | Karlsruhe Forschzent | Verfahren zum Ziehen von Einkristallen |
US6385230B1 (en) | 2001-03-14 | 2002-05-07 | Floswerve Manage Company | Homogeneous electrode of a reactive metal alloy for vacuum arc remelting and a method for making the same from a plurality of induction melted charges |
JP5943944B2 (ja) * | 2012-02-01 | 2016-07-05 | Jx金属株式会社 | 多結晶シリコンスパッタリングターゲット |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE38055C (de) * | J. H. CAMPBELL in New-York, V. St. A | Absorptions-Dampfmaschine | ||
US589221A (en) * | 1897-08-31 | Paul emile placet | ||
GB191214020A (ja) * | 1911-06-26 | |||
DE903266C (de) * | 1941-04-05 | 1954-02-04 | Aeg | Elektrischer Induktionsofen zum Schmelzen von Magnesium und seinen Legierungen |
US2354876A (en) * | 1941-05-20 | 1944-08-01 | Owens Calvin Arthur | Method of treating cementitious objects |
BE528916A (ja) * | 1953-05-18 | |||
US2858586A (en) * | 1954-01-28 | 1958-11-04 | Joseph B Brennan | Smelting apparatus and method |
US2793103A (en) * | 1954-02-24 | 1957-05-21 | Siemens Ag | Method for producing rod-shaped bodies of crystalline material |
US2817509A (en) * | 1954-08-19 | 1957-12-24 | Electro Refractories & Abrasiv | Lined crucibles |
US2872299A (en) * | 1954-11-30 | 1959-02-03 | Rca Corp | Preparation of reactive materials in a molten non-reactive lined crucible |
US2836412A (en) * | 1955-08-22 | 1958-05-27 | Titanium Metals Corp | Arc melting crucible |
US2818248A (en) * | 1955-09-12 | 1957-12-31 | Paul S Kelsey | Refractory block and ladle lining construction |
US2941867A (en) * | 1957-10-14 | 1960-06-21 | Du Pont | Reduction of metal halides |
-
0
- NL NL112552D patent/NL112552C/xx active
- NL NL226823D patent/NL226823A/xx unknown
-
1957
- 1957-04-15 DE DES53137A patent/DE1159903B/de active Pending
-
1958
- 1958-03-17 US US721895A patent/US3051555A/en not_active Expired - Lifetime
- 1958-03-26 GB GB9731/58A patent/GB840135A/en not_active Expired
- 1958-04-08 CH CH5800158A patent/CH365545A/de unknown
- 1958-04-15 FR FR1203822D patent/FR1203822A/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
US3051555A (en) | 1962-08-28 |
GB840135A (en) | 1960-07-06 |
FR1203822A (fr) | 1960-01-21 |
DE1159903B (de) | 1963-12-27 |
CH365545A (de) | 1962-11-15 |
NL226823A (ja) | 1900-01-01 |