NL112520C - - Google Patents
Info
- Publication number
- NL112520C NL112520C NL112520DA NL112520C NL 112520 C NL112520 C NL 112520C NL 112520D A NL112520D A NL 112520DA NL 112520 C NL112520 C NL 112520C
- Authority
- NL
- Netherlands
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/04—Anodisation of aluminium or alloys based thereon
- C25D11/18—After-treatment, e.g. pore-sealing
- C25D11/24—Chemical after-treatment
- C25D11/246—Chemical after-treatment for sealing layers
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/28—Controlling or regulating
- C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
- Y10T117/1084—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone having details of a stabilizing feature
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
- Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details
Landscapes
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Induction Heating (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Furnace Details (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL244489 | 1959-10-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL112520C true NL112520C (US07122547-20061017-C00273.png) |
Family
ID=19751988
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL112520D NL112520C (US07122547-20061017-C00273.png) | 1959-10-19 | ||
| NL244489D NL244489A (US07122547-20061017-C00273.png) | 1959-10-19 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL244489D NL244489A (US07122547-20061017-C00273.png) | 1959-10-19 |
Country Status (5)
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3250842A (en) * | 1963-01-15 | 1966-05-10 | Atomic Energy Commission | Electron beam zone refining |
| US3258314A (en) * | 1963-04-12 | 1966-06-28 | Westinghouse Electric Corp | Method for interior zone melting of a crystalline rod |
| US3242015A (en) * | 1963-09-24 | 1966-03-22 | Monsanto Co | Apparatus and method for producing single crystal structures |
| US3275417A (en) * | 1963-10-15 | 1966-09-27 | Texas Instruments Inc | Production of dislocation-free silicon single crystals |
| DE1262978B (de) * | 1965-01-05 | 1968-03-14 | Siemens Ag | Verfahren zum Herstellen eines Halbleitereinkristalls |
| DE1275996B (de) * | 1965-07-10 | 1968-08-29 | Siemens Ag | Vorrichtung zum tiegelfreien Zonenschmelzen |
| DE2234512C3 (de) * | 1972-07-13 | 1979-04-19 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zum Herstellen von (Umorientierten Halbleitereinkristallstäben mit zur Stabmitte abtauendem spezifischem Widerstand |
| US5069742A (en) * | 1990-02-05 | 1991-12-03 | Bleil Carl E | Method and apparatus for crystal ribbon growth |
| DE10328859B4 (de) * | 2003-06-20 | 2007-09-27 | Leibniz-Institut Für Festkörper- Und Werkstoffforschung Dresden E.V. | Verfahren und Vorrichtung zum Ziehen von Einkristallen durch Zonenziehen |
| CN109139639B (zh) * | 2018-08-24 | 2020-10-16 | 上海宇航系统工程研究所 | 一种快速锁定的轻量化位姿可调连接机构 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AT194444B (de) * | 1953-02-26 | 1958-01-10 | Siemens Ag | Verfahren und Einrichtung zur Behandlung einer längserstreckten Halbleiterkristallanordnung |
| US2743199A (en) * | 1955-03-30 | 1956-04-24 | Westinghouse Electric Corp | Process of zone refining an elongated body of metal |
| US2897329A (en) * | 1957-09-23 | 1959-07-28 | Sylvania Electric Prod | Zone melting apparatus |
| US2905798A (en) * | 1958-09-15 | 1959-09-22 | Lindberg Eng Co | Induction heating apparatus |
| US3323091A (en) * | 1964-11-05 | 1967-05-30 | Honeywell Inc | Multicore transformer including integral mounting assembly |
-
0
- NL NL112520D patent/NL112520C/xx active
- NL NL244489D patent/NL244489A/xx unknown
-
1960
- 1960-10-14 GB GB35302/60A patent/GB954991A/en not_active Expired
- 1960-10-15 CH CH1154560A patent/CH425735A/de unknown
- 1960-10-17 DE DEN19044A patent/DE1257740B/de active Pending
- 1960-10-18 US US63345A patent/US3121619A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| DE1257740B (de) | 1968-01-04 |
| CH425735A (de) | 1966-12-15 |
| US3121619A (en) | 1964-02-18 |
| GB954991A (en) | 1964-04-08 |
| NL244489A (US07122547-20061017-C00273.png) |
