NL112257C - - Google Patents
Info
- Publication number
- NL112257C NL112257C NL112257DA NL112257C NL 112257 C NL112257 C NL 112257C NL 112257D A NL112257D A NL 112257DA NL 112257 C NL112257 C NL 112257C
- Authority
- NL
- Netherlands
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
- C30B15/12—Double crucible methods
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/005—Simultaneous pulling of more than one crystal
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL229533 | 1958-07-11 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL112257C true NL112257C (US20110009641A1-20110113-C00273.png) |
Family
ID=19751277
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL112257D NL112257C (US20110009641A1-20110113-C00273.png) | 1958-07-11 | ||
| NL229533D NL229533A (US20110009641A1-20110113-C00273.png) | 1958-07-11 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL229533D NL229533A (US20110009641A1-20110113-C00273.png) | 1958-07-11 |
Country Status (5)
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL270246A (US20110009641A1-20110113-C00273.png) * | 1961-10-13 | |||
| US3876388A (en) * | 1968-10-30 | 1975-04-08 | Siemens Ag | Method of varying the crystalline structure of or the concentration of impurities contained in a tubular starting crystal or both using diagonal zone melting |
| US3915656A (en) * | 1971-06-01 | 1975-10-28 | Tyco Laboratories Inc | Apparatus for growing crystalline bodies from the melt |
| DE2138359B2 (de) * | 1971-07-31 | 1973-05-17 | Preussag Ag, 3000 Hannover | Vorrichtung zum ziehen eines stabes |
| US3853489A (en) * | 1971-11-08 | 1974-12-10 | Tyco Laboratories Inc | A non-wetting aid for growing crystalline bodies |
| US4032390A (en) * | 1974-02-25 | 1977-06-28 | Corning Glass Works | Plural crystal pulling from a melt in an annular crucible heated on both inner and outer walls |
| US3961905A (en) * | 1974-02-25 | 1976-06-08 | Corning Glass Works | Crucible and heater assembly for crystal growth from a melt |
| US4125425A (en) * | 1974-03-01 | 1978-11-14 | U.S. Philips Corporation | Method of manufacturing flat tapes of crystalline silicon from a silicon melt by drawing a seed crystal of silicon from the melt flowing down the faces of a knife shaped heated element |
| US4289572A (en) * | 1976-12-27 | 1981-09-15 | Dow Corning Corporation | Method of closing silicon tubular bodies |
| US4190631A (en) * | 1978-09-21 | 1980-02-26 | Western Electric Company, Incorporated | Double crucible crystal growing apparatus |
| US4299648A (en) * | 1980-08-20 | 1981-11-10 | The United States Of America As Represented By The United States Department Of Energy | Method and apparatus for drawing monocrystalline ribbon from a melt |
| US4469552A (en) * | 1982-04-23 | 1984-09-04 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Process and apparatus for growing a crystal ribbon |
| US4711695A (en) * | 1983-05-19 | 1987-12-08 | Mobil Solar Energy Corporation | Apparatus for and method of making crystalline bodies |
| US4647437A (en) * | 1983-05-19 | 1987-03-03 | Mobil Solar Energy Corporation | Apparatus for and method of making crystalline bodies |
| JPS62128999A (ja) * | 1985-11-25 | 1987-06-11 | Sumitomo Electric Ind Ltd | ２重るつぼを用いた単結晶引上方法及び２重るつぼ |
| JPH0733305B2 (ja) * | 1987-03-20 | 1995-04-12 | 三菱マテリアル株式会社 | 石英製二重ルツボの製造方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2730470A (en) * | 1950-06-15 | 1956-01-10 | Bell Telephone Labor Inc | Method of making semi-conductor crystals |
| DE973231C (de) * | 1953-01-20 | 1959-12-24 | Telefunken Gmbh | Verfahren zur Herstellung von Einkristallen durch Ziehen aus einer Schmelze |
| AT194444B (de) * | 1953-02-26 | 1958-01-10 | Siemens Ag | Verfahren und Einrichtung zur Behandlung einer längserstreckten Halbleiterkristallanordnung |
| DE1032852B (de) * | 1953-11-24 | 1958-06-26 | Siemens Und Halske Ag | Verfahren und Einrichtung zur Herstellung von Halbleiterkristallen nach dem Kristallziehverfahren aus der Schmelze |
| DE1134967B (de) * | 1954-03-02 | 1962-08-23 | Siemens Ag | Verfahren zum Ziehen eines stabfoermigen kristallinen Halbleiterkoerpers |
| DE962553C (de) * | 1954-09-14 | 1957-04-25 | Licentia Gmbh | Verfahren zur Herstellung von einkristallinen Halbleiterkoerpern in Form von Hohlzylindern durch Ziehen aus der Schmelze |
| US2822308A (en) * | 1955-03-29 | 1958-02-04 | Gen Electric | Semiconductor p-n junction units and method of making the same |
| US2841559A (en) * | 1955-04-27 | 1958-07-01 | Rca Corp | Method of doping semi-conductive materials |
| US2879189A (en) * | 1956-11-21 | 1959-03-24 | Shockley William | Method for growing junction semi-conductive devices |
-
0
- NL NL112257D patent/NL112257C/xx active
- NL NL229533D patent/NL229533A/xx unknown
-
1959
- 1959-06-11 US US819766A patent/US3015592A/en not_active Expired - Lifetime
- 1959-07-07 DE DEN16948A patent/DE1108185B/de active Pending
- 1959-07-08 GB GB23484/59A patent/GB915120A/en not_active Expired
- 1959-07-09 FR FR799725A patent/FR1229489A/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| US3015592A (en) | 1962-01-02 |
| GB915120A (en) | 1963-01-09 |
| NL229533A (US20110009641A1-20110113-C00273.png) | |
| DE1108185B (de) | 1961-06-08 |
| FR1229489A (fr) | 1960-09-07 |
