NL111788C - - Google Patents
Info
- Publication number
- NL111788C NL111788C NL111788DA NL111788C NL 111788 C NL111788 C NL 111788C NL 111788D A NL111788D A NL 111788DA NL 111788 C NL111788 C NL 111788C
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30612—Etching of AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US591824A US2846340A (en) | 1956-06-18 | 1956-06-18 | Semiconductor devices and method of making same |
Publications (1)
Publication Number | Publication Date |
---|---|
NL111788C true NL111788C (fr) |
Family
ID=24368099
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL111788D NL111788C (fr) | 1956-06-18 | ||
NL218192D NL218192A (fr) | 1956-06-18 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL218192D NL218192A (fr) | 1956-06-18 |
Country Status (6)
Country | Link |
---|---|
US (1) | US2846340A (fr) |
BE (1) | BE558436A (fr) |
DE (1) | DE1073632B (fr) |
FR (1) | FR1176057A (fr) |
GB (1) | GB867413A (fr) |
NL (2) | NL218192A (fr) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3211970A (en) * | 1957-05-06 | 1965-10-12 | Rca Corp | Semiconductor devices |
BE574814A (fr) * | 1958-01-16 | |||
FR1193194A (fr) * | 1958-03-12 | 1959-10-30 | Perfectionnements aux procédés de fabrication par diffusion des transistors et des redresseurs à jonctions | |
US3132057A (en) * | 1959-01-29 | 1964-05-05 | Raytheon Co | Graded energy gap semiconductive device |
GB921367A (en) * | 1959-04-06 | 1963-03-20 | Standard Telephones Cables Ltd | Semiconductor device and method of manufacture |
NL155412C (fr) * | 1959-04-15 | |||
US3005735A (en) * | 1959-07-24 | 1961-10-24 | Philco Corp | Method of fabricating semiconductor devices comprising cadmium-containing contacts |
US3028529A (en) * | 1959-08-26 | 1962-04-03 | Bendix Corp | Semiconductor diode |
DE1211336B (de) * | 1960-02-12 | 1966-02-24 | Shindengen Electric Mfg | Halbleitergleichrichter mit zwei Schichten von verschiedenem spezifischem Widerstand |
NL125226C (fr) * | 1960-05-02 | |||
US3096219A (en) * | 1960-05-02 | 1963-07-02 | Rca Corp | Semiconductor devices |
US3070477A (en) * | 1960-10-03 | 1962-12-25 | Mandelkorn Joseph | Method of making a gallium sulfide dioxide |
US3139599A (en) * | 1960-12-09 | 1964-06-30 | Texas Instruments Inc | Infrared detector with pn junctions in indium antimonide |
US3176204A (en) * | 1960-12-22 | 1965-03-30 | Raytheon Co | Device composed of different semiconductive materials |
US3148094A (en) * | 1961-03-13 | 1964-09-08 | Texas Instruments Inc | Method of producing junctions by a relocation process |
US3210624A (en) * | 1961-04-24 | 1965-10-05 | Monsanto Co | Article having a silicon carbide substrate with an epitaxial layer of boron phosphide |
NL280641A (fr) * | 1961-07-07 | |||
NL280849A (fr) * | 1961-07-12 | 1900-01-01 | ||
US3262825A (en) * | 1961-12-29 | 1966-07-26 | Bell Telephone Labor Inc | Method for etching crystals of group iii(a)-v(a) compounds and etchant used therefor |
US3275539A (en) * | 1962-11-09 | 1966-09-27 | North American Phillips Compan | Method of manufacturing semiconductor devices |
US3239393A (en) * | 1962-12-31 | 1966-03-08 | Ibm | Method for producing semiconductor articles |
US3255055A (en) * | 1963-03-20 | 1966-06-07 | Hoffman Electronics Corp | Semiconductor device |
US3293092A (en) * | 1964-03-17 | 1966-12-20 | Ibm | Semiconductor device fabrication |
SE313623B (fr) * | 1965-01-30 | 1969-08-18 | Asea Ab | |
US3484854A (en) * | 1966-10-17 | 1969-12-16 | Westinghouse Electric Corp | Processing semiconductor materials |
CN112143938B (zh) * | 2020-09-25 | 2021-11-19 | 先导薄膜材料(广东)有限公司 | 砷化镉的制备方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE484779A (fr) * | 1948-02-26 | |||
GB707008A (en) * | 1948-10-01 | 1954-04-07 | Licentia Gmbh | Electric un-symmetrically conductive systems, particularly dry-plate rectifiers |
FR1098372A (fr) * | 1953-05-22 | 1955-07-25 | Rca Corp | Dispositifs semi-conducteurs |
US2759861A (en) * | 1954-09-22 | 1956-08-21 | Bell Telephone Labor Inc | Process of making photoconductive compounds |
-
0
- NL NL111788D patent/NL111788C/xx active
- NL NL218192D patent/NL218192A/xx unknown
- DE DENDAT1073632D patent/DE1073632B/de active Pending
- BE BE558436D patent/BE558436A/xx unknown
-
1956
- 1956-06-18 US US591824A patent/US2846340A/en not_active Expired - Lifetime
-
1957
- 1957-06-04 GB GB17784/57A patent/GB867413A/en not_active Expired
- 1957-06-15 FR FR1176057D patent/FR1176057A/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
BE558436A (fr) | |
NL218192A (fr) | |
US2846340A (en) | 1958-08-05 |
FR1176057A (fr) | 1959-04-03 |
GB867413A (en) | 1961-05-10 |
DE1073632B (de) | 1960-01-21 |