NL105573C - - Google Patents
Info
- Publication number
- NL105573C NL105573C NL105573DA NL105573C NL 105573 C NL105573 C NL 105573C NL 105573D A NL105573D A NL 105573DA NL 105573 C NL105573 C NL 105573C
- Authority
- NL
- Netherlands
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB24510/55A GB792006A (en) | 1955-08-25 | 1955-08-25 | Improvements in or relating to the preparation of single crystals of silicon |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL105573C true NL105573C (en:Method) |
Family
ID=10212792
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL105573D NL105573C (en:Method) | 1955-08-25 | ||
| NL209709D NL209709A (en:Method) | 1955-08-25 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL209709D NL209709A (en:Method) | 1955-08-25 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US2851342A (en:Method) |
| DE (1) | DE1042552B (en:Method) |
| FR (1) | FR1155771A (en:Method) |
| GB (1) | GB792006A (en:Method) |
| NL (2) | NL209709A (en:Method) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL113990C (en:Method) * | 1955-11-02 | |||
| US3330251A (en) * | 1955-11-02 | 1967-07-11 | Siemens Ag | Apparatus for producing highest-purity silicon for electric semiconductor devices |
| US2975036A (en) * | 1956-10-05 | 1961-03-14 | Motorola Inc | Crystal pulling apparatus |
| US3036892A (en) * | 1958-03-05 | 1962-05-29 | Siemens Ag | Production of hyper-pure monocrystal-line rods in continuous operation |
| NL251143A (en:Method) * | 1959-05-04 | |||
| US3095279A (en) * | 1960-04-07 | 1963-06-25 | Tung Sol Electric Inc | Apparatus for producing pure silicon |
| US3053635A (en) * | 1960-09-26 | 1962-09-11 | Clevite Corp | Method of growing silicon carbide crystals |
| US3186880A (en) * | 1962-10-10 | 1965-06-01 | Martin Marietta Corp | Method of producing unsupported epitaxial films of germanium by evaporating the substrate |
| US3277865A (en) * | 1963-04-01 | 1966-10-11 | United States Steel Corp | Metal-vapor source with heated reflecting shield |
| US3359077A (en) * | 1964-05-25 | 1967-12-19 | Globe Union Inc | Method of growing a crystal |
| DE1261842B (de) * | 1964-12-12 | 1968-02-29 | Siemens Ag | Verfahren zum Herstellen von hochreinem Silicium |
| DE1521494B1 (de) * | 1966-02-25 | 1970-11-26 | Siemens Ag | Vorrichtung zum Eindiffundieren von Fremdstoffen in Halbleiterkoerper |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2747971A (en) * | 1953-07-20 | 1956-05-29 | Westinghouse Electric Corp | Preparation of pure crystalline silicon |
| US2686212A (en) * | 1953-08-03 | 1954-08-10 | Gen Electric | Electric heating apparatus |
-
0
- NL NL105573D patent/NL105573C/xx active
- NL NL209709D patent/NL209709A/xx unknown
-
1955
- 1955-08-25 GB GB24510/55A patent/GB792006A/en not_active Expired
-
1956
- 1956-08-10 US US603327A patent/US2851342A/en not_active Expired - Lifetime
- 1956-08-14 FR FR1155771D patent/FR1155771A/fr not_active Expired
- 1956-08-24 DE DEG20388A patent/DE1042552B/de active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| GB792006A (en) | 1958-03-19 |
| DE1042552B (de) | 1958-11-06 |
| NL209709A (en:Method) | |
| FR1155771A (fr) | 1958-05-08 |
| US2851342A (en) | 1958-09-09 |