NL1032952A1 - Polarisatie-evaluatiemasker, polarisatie-evaluatiewerkwijze en polarisatiebepalingsinrichting. - Google Patents

Polarisatie-evaluatiemasker, polarisatie-evaluatiewerkwijze en polarisatiebepalingsinrichting.

Info

Publication number
NL1032952A1
NL1032952A1 NL1032952A NL1032952A NL1032952A1 NL 1032952 A1 NL1032952 A1 NL 1032952A1 NL 1032952 A NL1032952 A NL 1032952A NL 1032952 A NL1032952 A NL 1032952A NL 1032952 A1 NL1032952 A1 NL 1032952A1
Authority
NL
Netherlands
Prior art keywords
polarization
determining device
mask
evaluation
evaluation method
Prior art date
Application number
NL1032952A
Other languages
English (en)
Other versions
NL1032952C2 (nl
Inventor
Hiroshi Nomura
Original Assignee
Toshiba Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Kk filed Critical Toshiba Kk
Publication of NL1032952A1 publication Critical patent/NL1032952A1/nl
Application granted granted Critical
Publication of NL1032952C2 publication Critical patent/NL1032952C2/nl

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J4/00—Measuring polarisation of light
    • G01J4/04—Polarimeters using electric detection means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70566—Polarisation control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Polarising Elements (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
NL1032952A 2005-12-01 2006-11-28 Polarisatie-evaluatiemasker, polarisatie-evaluatiewerkwijze en polarisatiebepalingsinrichting. NL1032952C2 (nl)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2005348244 2005-12-01
JP2005348244 2005-12-01
JP2006283812A JP4928897B2 (ja) 2005-12-01 2006-10-18 偏光評価マスク、偏光評価方法、及び偏光計測装置
JP2006283812 2006-10-18

Publications (2)

Publication Number Publication Date
NL1032952A1 true NL1032952A1 (nl) 2007-06-04
NL1032952C2 NL1032952C2 (nl) 2009-03-16

Family

ID=38118394

Family Applications (1)

Application Number Title Priority Date Filing Date
NL1032952A NL1032952C2 (nl) 2005-12-01 2006-11-28 Polarisatie-evaluatiemasker, polarisatie-evaluatiewerkwijze en polarisatiebepalingsinrichting.

Country Status (4)

Country Link
US (2) US7593102B2 (nl)
JP (1) JP4928897B2 (nl)
NL (1) NL1032952C2 (nl)
TW (1) TW200736588A (nl)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5191851B2 (ja) * 2008-09-25 2013-05-08 株式会社東芝 偏光状態検査装置および偏光状態検査方法
US8368890B2 (en) * 2009-02-19 2013-02-05 International Business Machines Corporation Polarization monitoring reticle design for high numerical aperture lithography systems
TW201129854A (en) * 2009-08-07 2011-09-01 Toshiba Kk Polarization evaluation mask, exposure device, and polarization evaluation method
US8883372B2 (en) 2012-06-05 2014-11-11 Nanya Technology Corp. Reticle with composite polarizer and method of simultaneous optimization of imaging of a set of different patterns
US9333733B2 (en) * 2013-07-26 2016-05-10 Varian Semiconductor Equipment Associates, Inc. Multi-part mask for implanting workpieces
JP6202062B2 (ja) * 2014-09-30 2017-09-27 住友化学株式会社 偏光フィルムの強度測定方法及び偏光板
US20160231176A1 (en) * 2015-02-05 2016-08-11 Polarization Solutions, Llc Light irradiation device having polarization measuring mechanism
JP2016180627A (ja) * 2015-03-23 2016-10-13 東芝ライテック株式会社 偏光光測定装置、および偏光光照射装置
US9631979B2 (en) 2015-09-25 2017-04-25 Benchmark Technologies Phase-shift reticle for characterizing a beam
WO2017180645A1 (en) * 2016-04-11 2017-10-19 Polaris Sensor Technologies, Inc. Short wave infrared polarimeter
CN112505936B (zh) * 2021-01-29 2021-04-27 成都工业学院 一种彩色防伪印刷品
CN113218877B (zh) * 2021-05-20 2022-04-15 华南师范大学 一种穆勒矩阵检测装置的校准方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5459000A (en) * 1992-10-14 1995-10-17 Canon Kabushiki Kaisha Image projection method and device manufacturing method using the image projection method
KR0153796B1 (ko) * 1993-09-24 1998-11-16 사토 후미오 노광장치 및 노광방법
JPH09167735A (ja) * 1995-12-15 1997-06-24 Canon Inc 投影露光装置及びそれを用いた半導体デバイスの製造方法
US6628370B1 (en) * 1996-11-25 2003-09-30 Mccullough Andrew W. Illumination system with spatially controllable partial coherence compensating for line width variances in a photolithographic system
JP3651676B2 (ja) * 2002-07-11 2005-05-25 株式会社東芝 検査方法及びフォトマスク
JP2004061515A (ja) * 2002-07-29 2004-02-26 Cark Zeiss Smt Ag 光学系による偏光状態への影響を決定する方法及び装置と、分析装置
JP2005005521A (ja) 2003-06-12 2005-01-06 Nikon Corp 露光装置、露光方法、および偏光状態測定装置
JP3971363B2 (ja) * 2003-10-07 2007-09-05 株式会社東芝 露光装置及び露光装置の光学系のミュラー行列を測定する方法
JP3718511B2 (ja) 2003-10-07 2005-11-24 株式会社東芝 露光装置検査用マスク、露光装置検査方法及び露光装置
US7150945B2 (en) * 2003-11-18 2006-12-19 Micron Technology, Inc. Polarized reticle, photolithography system, and method of forming a pattern using a polarized reticle in conjunction with polarized light
JP2005333001A (ja) 2004-05-20 2005-12-02 Nikon Corp 照明光学装置、露光装置、および露光方法
JP2006011296A (ja) 2004-06-29 2006-01-12 Toshiba Corp 偏光素子、偏光素子の製造方法、及び露光装置の評価方法
JP2008527756A (ja) * 2005-01-19 2008-07-24 ライテル・インストルメンツ 光源コヒーレンスマトリクスの測定方法および装置
US7375799B2 (en) * 2005-02-25 2008-05-20 Asml Netherlands B.V. Lithographic apparatus

Also Published As

Publication number Publication date
JP4928897B2 (ja) 2012-05-09
US20070127024A1 (en) 2007-06-07
US7564553B2 (en) 2009-07-21
US20080084563A1 (en) 2008-04-10
TWI303710B (nl) 2008-12-01
NL1032952C2 (nl) 2009-03-16
JP2007179003A (ja) 2007-07-12
US7593102B2 (en) 2009-09-22
TW200736588A (en) 2007-10-01

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Legal Events

Date Code Title Description
AD1A A request for search or an international type search has been filed
RD2N Patents in respect of which a decision has been taken or a report has been made (novelty report)

Effective date: 20090112

PD2B A search report has been drawn up
PD Change of ownership

Owner name: TOSHIBA MEMORY CORPORATION; JP

Free format text: DETAILS ASSIGNMENT: CHANGE OF OWNER(S), ASSIGNMENT; FORMER OWNER NAME: KABUSHIKI KAISHA TOSHIBA

Effective date: 20170804

MM Lapsed because of non-payment of the annual fee

Effective date: 20181201