NL1031205A1 - Elektrostatische ontladingsschakeling. - Google Patents

Elektrostatische ontladingsschakeling.

Info

Publication number
NL1031205A1
NL1031205A1 NL1031205A NL1031205A NL1031205A1 NL 1031205 A1 NL1031205 A1 NL 1031205A1 NL 1031205 A NL1031205 A NL 1031205A NL 1031205 A NL1031205 A NL 1031205A NL 1031205 A1 NL1031205 A1 NL 1031205A1
Authority
NL
Netherlands
Prior art keywords
electrostatic discharge
discharge circuit
electrostatic
circuit
discharge
Prior art date
Application number
NL1031205A
Other languages
English (en)
Other versions
NL1031205C2 (nl
Inventor
Chan-Hee Jeon
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020050015543A external-priority patent/KR100725361B1/ko
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of NL1031205A1 publication Critical patent/NL1031205A1/nl
Application granted granted Critical
Publication of NL1031205C2 publication Critical patent/NL1031205C2/nl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
NL1031205A 2005-02-24 2006-02-21 Elektrostatische ontladingsschakeling. NL1031205C2 (nl)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR20050015543 2005-02-24
KR1020050015543A KR100725361B1 (ko) 2005-02-24 2005-02-24 이에스디 보호 소자 및 파워 클램프를 구비하는 멀티 파워블록형 집적 회로 장치
US22619305 2005-09-15
US11/226,193 US7907373B2 (en) 2005-02-24 2005-09-15 Electrostatic discharge circuit

Publications (2)

Publication Number Publication Date
NL1031205A1 true NL1031205A1 (nl) 2006-08-25
NL1031205C2 NL1031205C2 (nl) 2008-02-12

Family

ID=37044848

Family Applications (1)

Application Number Title Priority Date Filing Date
NL1031205A NL1031205C2 (nl) 2005-02-24 2006-02-21 Elektrostatische ontladingsschakeling.

Country Status (2)

Country Link
JP (1) JP5587529B2 (nl)
NL (1) NL1031205C2 (nl)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2979716B2 (ja) * 1991-06-06 1999-11-15 日本電気株式会社 Ｃｍｏｓ集積回路
JP3499578B2 (ja) * 1992-09-18 2004-02-23 株式会社東芝 半導体集積回路
JPH10290519A (ja) * 1997-04-15 1998-10-27 Hitachi Ltd 半導体集積回路装置
DE69736714D1 (de) * 1997-12-31 2006-11-02 St Microelectronics Srl ESD-Schutznetzwerk auf Halbleiterschaltungsstrukturen
US6963111B2 (en) * 2003-06-13 2005-11-08 Texas Instruments Incorporated Efficient pMOS ESD protection circuit

Also Published As

Publication number Publication date
NL1031205C2 (nl) 2008-02-12
JP2006237618A (ja) 2006-09-07
JP5587529B2 (ja) 2014-09-10

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Legal Events

Date Code Title Description
AD1A A request for search or an international type search has been filed
RD2N Patents in respect of which a decision has been taken or a report has been made (novelty report)

Effective date: 20071010

PD2B A search report has been drawn up
MM Lapsed because of non-payment of the annual fee

Effective date: 20160301