MY8600717A - Fet voltage level detecting circuit - Google Patents

Fet voltage level detecting circuit

Info

Publication number
MY8600717A
MY8600717A MY717/86A MY8600717A MY8600717A MY 8600717 A MY8600717 A MY 8600717A MY 717/86 A MY717/86 A MY 717/86A MY 8600717 A MY8600717 A MY 8600717A MY 8600717 A MY8600717 A MY 8600717A
Authority
MY
Malaysia
Prior art keywords
voltage level
detecting circuit
level detecting
fet voltage
fet
Prior art date
Application number
MY717/86A
Other languages
English (en)
Inventor
Fuad Hanna Musa
Pern Shaw
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of MY8600717A publication Critical patent/MY8600717A/xx

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/247—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the supply voltage
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/165—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
    • G01R19/16504—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the components employed
    • G01R19/16519—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the components employed using FET's

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Measurement Of Current Or Voltage (AREA)
  • Power Sources (AREA)
  • Electronic Switches (AREA)
MY717/86A 1978-09-05 1986-12-30 Fet voltage level detecting circuit MY8600717A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/939,725 US4224539A (en) 1978-09-05 1978-09-05 FET Voltage level detecting circuit

Publications (1)

Publication Number Publication Date
MY8600717A true MY8600717A (en) 1986-12-31

Family

ID=25473609

Family Applications (1)

Application Number Title Priority Date Filing Date
MY717/86A MY8600717A (en) 1978-09-05 1986-12-30 Fet voltage level detecting circuit

Country Status (6)

Country Link
US (1) US4224539A (enrdf_load_stackoverflow)
JP (1) JPS55149879A (enrdf_load_stackoverflow)
DE (1) DE2935858A1 (enrdf_load_stackoverflow)
FR (1) FR2435723A1 (enrdf_load_stackoverflow)
GB (1) GB2030398B (enrdf_load_stackoverflow)
MY (1) MY8600717A (enrdf_load_stackoverflow)

Families Citing this family (40)

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GB2020437B (en) * 1978-04-14 1982-08-04 Seiko Instr & Electronics Voltage detecting circuit
JPS55149871A (en) * 1978-07-31 1980-11-21 Fujitsu Ltd Line voltage detector
US4296338A (en) * 1979-05-01 1981-10-20 Motorola, Inc. Power on and low voltage reset circuit
US4301380A (en) * 1979-05-01 1981-11-17 Motorola, Inc. Voltage detector
JPS5750109A (en) * 1980-09-10 1982-03-24 Toshiba Corp High impedance circuit for integrated circuit
US4367422A (en) * 1980-10-01 1983-01-04 General Electric Company Power on restart circuit
US4381981A (en) * 1980-12-17 1983-05-03 S. A. Texaco Belgium N.V. Sacrificial cathodic protection system
US4435658A (en) * 1981-02-17 1984-03-06 Burroughs Corporation Two-level threshold circuitry for large scale integrated circuit memories
DE3108726A1 (de) * 1981-03-07 1982-09-16 Deutsche Itt Industries Gmbh, 7800 Freiburg Monolithisch integrierte referenzspannungsquelle
DE3120622C2 (de) * 1981-05-23 1983-02-17 Rohde & Schwarz GmbH & Co KG, 8000 München Logikanalysator
JPS5862719A (ja) * 1981-10-09 1983-04-14 Toshiba Corp イニシヤライズ回路
JPS58151124A (ja) * 1982-03-04 1983-09-08 Ricoh Co Ltd レベル変換回路
JPS58196464A (ja) * 1982-05-11 1983-11-15 Matsushita Electric Ind Co Ltd 電圧降下検出回路
JPS58221421A (ja) * 1982-06-09 1983-12-23 Fujitsu Ltd 電源電圧検出回路
JPS5915130U (ja) * 1982-07-19 1984-01-30 三洋電機株式会社 制御装置
US4547853A (en) * 1982-10-13 1985-10-15 Pitney Bowes Inc. Electronic postage meter reset circuit
JPS5971525A (ja) * 1982-10-18 1984-04-23 Nec Corp 状態制御装置
DE3310398A1 (de) * 1983-03-18 1984-09-20 Joh. Vaillant Gmbh U. Co, 5630 Remscheid Elektrische schaltung zum sichern des informationsinhaltes eines speichers
JPH063454Y2 (ja) * 1983-06-29 1994-01-26 三菱電機株式会社 メモリ用バックアップ回路
JPH0773205B2 (ja) * 1983-12-20 1995-08-02 株式会社日立製作所 レベル変換回路
JPS60214175A (ja) * 1984-04-09 1985-10-26 Matsushita Electric Ind Co Ltd 車載用テレビジヨン受像装置
DE3446129C2 (de) * 1984-12-18 1992-07-23 Robert Bosch Gmbh, 7000 Stuttgart Schaltungsanordnung zur Überwachung der Stromversorgung eines elektrischen Verbrauchers
US4788455A (en) * 1985-08-09 1988-11-29 Mitsubishi Denki Kabushiki Kaisha CMOS reference voltage generator employing separate reference circuits for each output transistor
US4600876A (en) * 1985-09-23 1986-07-15 Gte Communication Systems Corp. Integrated bootstrap bias circuit
JPS6280716A (ja) * 1985-10-03 1987-04-14 Olympus Optical Co Ltd マイクロコンピュータを備えた電子機器
JPH0441380Y2 (enrdf_load_stackoverflow) * 1986-05-20 1992-09-29
JPS63103311A (ja) * 1986-10-20 1988-05-09 Victor Co Of Japan Ltd マイクロコンピユ−タシステムの停電時の処理方法
JPH0679263B2 (ja) * 1987-05-15 1994-10-05 株式会社東芝 基準電位発生回路
DE3924603A1 (de) * 1989-07-25 1991-01-31 Siemens Ag Schaltung zur signaltechnisch sicheren bewertung einer gleichspannung
JP2761687B2 (ja) * 1991-12-19 1998-06-04 三菱電機株式会社 電圧レベル検出回路
TW239190B (enrdf_load_stackoverflow) * 1993-04-30 1995-01-21 Philips Electronics Nv
DE4314533C1 (de) * 1993-05-03 1994-05-19 Siemens Ag Schaltungsanordnung zur Überwachung der Versorgungsspannung einer Prozessoreinheit
JP3246541B2 (ja) * 1994-06-06 2002-01-15 横河電機株式会社 半導体装置
US6410997B1 (en) * 1998-04-17 2002-06-25 Sarnoff Corporation Power source for a hearing aid
JP2001111409A (ja) * 1999-10-12 2001-04-20 Oki Micro Design Co Ltd 入力インタフェース回路
US6552603B2 (en) * 2000-06-23 2003-04-22 Ricoh Company Ltd. Voltage reference generation circuit and power source incorporating such circuit
DE10297753B4 (de) * 2002-07-01 2011-07-28 Lantiq Deutschland GmbH, 85579 Unterspannungs-Detektionsschaltung
KR100471182B1 (ko) * 2002-09-03 2005-03-10 삼성전자주식회사 레디/비지 핀을 이용하여 내부 전압 레벨을 알리는 반도체메모리 장치
US9329063B2 (en) 2011-02-04 2016-05-03 Semiconductor Components Industries, Llc Electronic device with flexible data and power interface
JP5723628B2 (ja) * 2011-02-18 2015-05-27 ルネサスエレクトロニクス株式会社 電圧検出回路

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Publication number Priority date Publication date Assignee Title
DE1284865B (de) * 1966-02-07 1968-12-05 Supramar Ag Tragfluegelboot mit Einrichtung zur selbsttaetigen Roll- und Stampfstabilisierung
US3508084A (en) * 1967-10-06 1970-04-21 Texas Instruments Inc Enhancement-mode mos circuitry
US3733498A (en) * 1971-09-27 1973-05-15 Telex Computer Products Dual-voltage feedback comparator for simultaneously monitoring a positive and negative voltage
US3815354A (en) * 1973-01-02 1974-06-11 Cal Tex Semiconductor Electronic watch
IT1026895B (it) * 1973-12-12 1978-10-20 Itt Circuito integrabile per il controllo di una tensione di alimentazione
US3877001A (en) * 1974-01-14 1975-04-08 Motorola Inc Battery status indicator
US3975649A (en) * 1974-01-16 1976-08-17 Hitachi, Ltd. Electronic circuit using field effect transistor with compensation means
US3913026A (en) * 1974-04-08 1975-10-14 Bulova Watch Co Inc Mos transistor gain block
DE2448827B1 (de) * 1974-10-14 1976-04-08 Unisel Gmbh & Co Geraete Kg Konstantspannungsquelle
GB1513930A (en) * 1974-12-20 1978-06-14 Seiko Instr & Electronics Battery voltage detecting device
JPS5221870A (en) * 1975-08-11 1977-02-18 Seiko Instr & Electronics Ltd Circuit for detecting battery voltage
JPS5221728A (en) * 1975-08-13 1977-02-18 Hitachi Ltd Power restoration interruption circuit
JPS5283127A (en) * 1975-12-31 1977-07-11 Fujitsu Ltd Instantaneous power cut detecting circuit
US4048524A (en) * 1976-04-21 1977-09-13 National Semiconductor Corporation MOS voltage level detecting and indicating apparatus
JPS5311068A (en) * 1976-07-16 1978-02-01 Sharp Corp Voltage detection circuit
CH623671A5 (en) * 1976-07-21 1981-06-15 Gen Electric Circuit arrangement for stabilising the feed voltage for at least one electronic circuit
US4100437A (en) * 1976-07-29 1978-07-11 Intel Corporation MOS reference voltage circuit
US4140930A (en) * 1976-07-30 1979-02-20 Sharp Kabushiki Kaisha Voltage detection circuit composed of at least two MOS transistors
JPS5337842A (en) * 1976-09-20 1978-04-07 Nippon Precision Saakitsutsu Kk Electronic circuit
US4096430A (en) * 1977-04-04 1978-06-20 General Electric Company Metal-oxide-semiconductor voltage reference

Also Published As

Publication number Publication date
FR2435723A1 (fr) 1980-04-04
GB2030398B (en) 1983-06-15
US4224539A (en) 1980-09-23
JPS55149879A (en) 1980-11-21
GB2030398A (en) 1980-04-02
DE2935858C2 (enrdf_load_stackoverflow) 1988-10-13
DE2935858A1 (de) 1980-03-13
FR2435723B1 (enrdf_load_stackoverflow) 1983-04-01

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