MY171542A - Processes and integrated systems for engineering a substrate surface for metal deposition - Google Patents

Processes and integrated systems for engineering a substrate surface for metal deposition

Info

Publication number
MY171542A
MY171542A MYPI2012004997A MYPI2012004997A MY171542A MY 171542 A MY171542 A MY 171542A MY PI2012004997 A MYPI2012004997 A MY PI2012004997A MY PI2012004997 A MYPI2012004997 A MY PI2012004997A MY 171542 A MY171542 A MY 171542A
Authority
MY
Malaysia
Prior art keywords
metal
substrate surface
copper
integrated system
processes
Prior art date
Application number
MYPI2012004997A
Other languages
English (en)
Inventor
William Thie
Boyd John
Tiruchirapalli Arunagiri
Fritz C Redeker
Yezdi Dordi
Arthur M Howald
Hyungsuk Alexander Yoon
Johan Vertommen
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/513,634 external-priority patent/US8771804B2/en
Priority claimed from US11/513,446 external-priority patent/US8747960B2/en
Priority claimed from US11/514,038 external-priority patent/US8241701B2/en
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of MY171542A publication Critical patent/MY171542A/en

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
MYPI2012004997A 2006-08-30 2007-08-17 Processes and integrated systems for engineering a substrate surface for metal deposition MY171542A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/513,634 US8771804B2 (en) 2005-08-31 2006-08-30 Processes and systems for engineering a copper surface for selective metal deposition
US11/513,446 US8747960B2 (en) 2005-08-31 2006-08-30 Processes and systems for engineering a silicon-type surface for selective metal deposition to form a metal silicide
US11/514,038 US8241701B2 (en) 2005-08-31 2006-08-30 Processes and systems for engineering a barrier surface for copper deposition

Publications (1)

Publication Number Publication Date
MY171542A true MY171542A (en) 2019-10-17

Family

ID=41202298

Family Applications (2)

Application Number Title Priority Date Filing Date
MYPI20090714 MY148605A (en) 2006-08-30 2007-08-17 Processes and integrated systems for engineering a substrate surface for metal deposition
MYPI2012004997A MY171542A (en) 2006-08-30 2007-08-17 Processes and integrated systems for engineering a substrate surface for metal deposition

Family Applications Before (1)

Application Number Title Priority Date Filing Date
MYPI20090714 MY148605A (en) 2006-08-30 2007-08-17 Processes and integrated systems for engineering a substrate surface for metal deposition

Country Status (5)

Country Link
JP (2) JP5489717B2 (zh)
CN (2) CN101558186B (zh)
MY (2) MY148605A (zh)
SG (1) SG174752A1 (zh)
TW (1) TWI393186B (zh)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090269507A1 (en) * 2008-04-29 2009-10-29 Sang-Ho Yu Selective cobalt deposition on copper surfaces
US8227344B2 (en) * 2010-02-26 2012-07-24 Tokyo Electron Limited Hybrid in-situ dry cleaning of oxidized surface layers
JP2012054306A (ja) * 2010-08-31 2012-03-15 Tokyo Electron Ltd 半導体装置の製造方法
US20130217225A1 (en) * 2010-08-31 2013-08-22 Tokyo Electron Limited Method for manufacturing semiconductor device
JP5560144B2 (ja) * 2010-08-31 2014-07-23 東京エレクトロン株式会社 半導体装置の製造方法
CN102468265A (zh) * 2010-11-01 2012-05-23 中芯国际集成电路制造(上海)有限公司 连接插塞及其制作方法
US8603913B1 (en) * 2012-12-20 2013-12-10 Lam Research Corporation Porous dielectrics K value restoration by thermal treatment and or solvent treatment
US9040385B2 (en) 2013-07-24 2015-05-26 Taiwan Semiconductor Manufacturing Co., Ltd. Mechanisms for cleaning substrate surface for hybrid bonding
US10792788B2 (en) 2013-10-22 2020-10-06 Tosoh Smd, Inc. Optimized textured surfaces and methods of optimizing
US20170148739A1 (en) * 2014-06-16 2017-05-25 Jeanette M. Roberts Selective diffusion barrier between metals of an integrated circuit device
US9997405B2 (en) 2014-09-30 2018-06-12 Lam Research Corporation Feature fill with nucleation inhibition
US9768060B2 (en) * 2014-10-29 2017-09-19 Applied Materials, Inc. Systems and methods for electrochemical deposition on a workpiece including removing contamination from seed layer surface prior to ECD
KR20230026514A (ko) 2016-10-02 2023-02-24 어플라이드 머티어리얼스, 인코포레이티드 루테늄 라이너로 구리 전자 이동을 개선하기 위한 도핑된 선택적 금속 캡
JP6842159B2 (ja) * 2016-12-13 2021-03-17 サムコ株式会社 プラズマ処理方法
US10438846B2 (en) 2017-11-28 2019-10-08 Taiwan Semiconductor Manufacturing Co., Ltd. Physical vapor deposition process for semiconductor interconnection structures
JP2019192892A (ja) 2018-04-18 2019-10-31 東京エレクトロン株式会社 処理システムおよび処理方法
US11978666B2 (en) 2018-12-05 2024-05-07 Lam Research Corporation Void free low stress fill
KR102301933B1 (ko) * 2018-12-26 2021-09-15 한양대학교 에리카산학협력단 반도체 소자의 제조 방법
US20220344205A1 (en) * 2019-09-25 2022-10-27 Tokyo Electron Limited Substrate liquid processing method and substate liquid processing apparatus
US11555250B2 (en) * 2020-04-29 2023-01-17 Applied Materials, Inc. Organic contamination free surface machining

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US6017820A (en) * 1998-07-17 2000-01-25 Cutek Research, Inc. Integrated vacuum and plating cluster system
US6144099A (en) * 1999-03-30 2000-11-07 Advanced Micro Devices, Inc. Semiconductor metalization barrier
US6365516B1 (en) * 2000-01-14 2002-04-02 Advanced Micro Devices, Inc. Advanced cobalt silicidation with in-situ hydrogen plasma clean
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US6475893B2 (en) * 2001-03-30 2002-11-05 International Business Machines Corporation Method for improved fabrication of salicide structures
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Also Published As

Publication number Publication date
JP2010503205A (ja) 2010-01-28
JP2014099627A (ja) 2014-05-29
SG174752A1 (en) 2011-10-28
JP5820870B2 (ja) 2015-11-24
CN101558186B (zh) 2015-01-14
TW200832556A (en) 2008-08-01
CN101558186A (zh) 2009-10-14
CN103107120B (zh) 2016-06-08
JP5489717B2 (ja) 2014-05-14
CN103107120A (zh) 2013-05-15
MY148605A (en) 2013-05-15
TWI393186B (zh) 2013-04-11

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