MY164683A - Manufacturing method of semiconductor device using a heat-resistant adhesive sheet - Google Patents

Manufacturing method of semiconductor device using a heat-resistant adhesive sheet

Info

Publication number
MY164683A
MY164683A MYPI2010002639A MYPI2010002639A MY164683A MY 164683 A MY164683 A MY 164683A MY PI2010002639 A MYPI2010002639 A MY PI2010002639A MY PI2010002639 A MYPI2010002639 A MY PI2010002639A MY 164683 A MY164683 A MY 164683A
Authority
MY
Malaysia
Prior art keywords
heat
resistant adhesive
adhesive sheets
lead frame
semiconductor chip
Prior art date
Application number
MYPI2010002639A
Inventor
Yun-Min Park
Ki-Jeong Moon
Hae-Sang Jeon
Sung-Hwan Choi
Chang-Hoon Sim
Original Assignee
Toray Advanced Mat Korea Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toray Advanced Mat Korea Inc filed Critical Toray Advanced Mat Korea Inc
Publication of MY164683A publication Critical patent/MY164683A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector involving a temporary auxiliary member not forming part of the bonding apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector involving a temporary auxiliary member not forming part of the bonding apparatus, e.g. removable or sacrificial coating, film or substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Die Bonding (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Adhesive Tapes (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

THIS DISCLOSURE PROVIDES A METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES USING HEAT-RESISTANT ADHESIVE SHEETS (3), MORE SPECIFICALLY TO A METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES USING HEAT-RESISTANT ADHESIVE SHEETS (3) WHICH CAN PRECLUDE DEFECTIVE PRODUCTS CAUSED BY ADHESIVE SHEETS DURING THE INSTALLATION PROCESS BY ATTACHING THE HEAT-RESISTANT ADHESIVE SHEETS (3) AFTER THE INSTALLATION PROCESS IN WHICH THE HEAT-RESISTANT ADHESIVE SHEETS (3) ARE EXPOSED TO HIGH TEMPERATURE FOR A LONG TIME, WHICH NOT ONLY CAN DESIRABLY PREVENT THE LEAKAGE OF RESIN WITH HIGH WETTABILITY OF AN ADHESIVE LAYER DURING THE SEALING PROCESS, BUT ALSO CAN PREVENT ANY RESIDUES FROM REMAINING ON AN ATTACHMENT SURFACE DURING THE PEELING PROCESS WITH THE HEAT-RESISTANCE SECURED BY A CROSS-LINKING REACTION THROUGH ENERGY-BEAM IRRADIATION, AND WHICH CAN AVOID OXIDATION ON THE ATTACHMENT SURFACE OF METAL OR THE LIKE AT HIGH TEMPERATURE, THEREBY SECURING RELIABILITY AND WORKABILITY. A METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES USING HEAT-RESISTANT ADHESIVE SHEETS (3) COMPRISING THE PROCESSES OF: (A) PREPARING A METALLIC LEAD FRAME; (B) INSTALLING A SEMICONDUCTOR CHIP (5) ONTO THE METALLIC LEAD FRAME; (C) CONNECTING LEADS OF THE METALLIC LEAD FRAME WITH THE SEMICONDUCTOR CHIP (5) THROUGH WIRES; (D) ATTACHING AND LAMINATING THE METALLIC LEAD FRAME THAT HAS THE SEMICONDUCTOR CHIP (5) INSTALLED THEREON AND THE WIRES CONNECTED THERETO WITH A HEAT-RESISTANT ADHESIVE SHEET (3); (E) SEALING THE SEMICONDUCTOR CHIP (5) WITH A SEALING RESIN (8); AND (F) REMOVING THE HEAT-RESISTANT ADHESIVE SHEET (3) AFTER THE COMPLETION OF THE SEALING.
MYPI2010002639A 2010-01-26 2010-06-08 Manufacturing method of semiconductor device using a heat-resistant adhesive sheet MY164683A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020100007018A KR20110087547A (en) 2010-01-26 2010-01-26 Manufacturing method of semiconductor device using a heat-resistant adhesive sheet

Publications (1)

Publication Number Publication Date
MY164683A true MY164683A (en) 2018-01-30

Family

ID=44296172

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI2010002639A MY164683A (en) 2010-01-26 2010-06-08 Manufacturing method of semiconductor device using a heat-resistant adhesive sheet

Country Status (4)

Country Link
KR (1) KR20110087547A (en)
CN (1) CN102136432B (en)
MY (1) MY164683A (en)
TW (1) TWI427715B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101364438B1 (en) * 2012-09-21 2014-02-18 도레이첨단소재 주식회사 Manufacturing method of semiconductor device using a energy ray -responsive heat-resistant adhesive sheet
CN103923577B (en) * 2014-05-12 2016-06-01 吴江友鑫新材料科技有限公司 It is applicable to high temperature resistant protective membrane and its preparation method of non-ITO conducting film
WO2018178821A2 (en) * 2017-03-31 2018-10-04 3M Innovative Properties Company Electronic devices including solid semiconductor dies
KR102203869B1 (en) 2018-03-28 2021-01-18 주식회사 엘지화학 Adhesieve sheet for temporary-attamchment and methode for producing semiconductor device using the same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3849978B2 (en) * 2002-06-10 2006-11-22 日東電工株式会社 Semiconductor device manufacturing method and heat-resistant adhesive tape used therefor
JP3934041B2 (en) * 2002-12-02 2007-06-20 日東電工株式会社 Semiconductor device manufacturing method and heat-resistant adhesive tape used therefor
JP4421204B2 (en) * 2003-03-25 2010-02-24 株式会社巴川製紙所 Adhesive sheet for manufacturing semiconductor device, semiconductor device using the same, and manufacturing method
JP4319892B2 (en) * 2003-11-07 2009-08-26 株式会社巴川製紙所 Adhesive sheet for manufacturing semiconductor device and method for manufacturing semiconductor device
JP4566568B2 (en) * 2004-01-23 2010-10-20 日東電工株式会社 Semiconductor device manufacturing method and heat-resistant adhesive tape used therefor
US7169651B2 (en) * 2004-08-11 2007-01-30 Advanced Semiconductor Engineering, Inc. Process and lead frame for making leadless semiconductor packages
JP2008144047A (en) * 2006-12-11 2008-06-26 Three M Innovative Properties Co Heat-resistant masking tape and method for using the same

Also Published As

Publication number Publication date
CN102136432A (en) 2011-07-27
TW201126617A (en) 2011-08-01
KR20110087547A (en) 2011-08-03
TWI427715B (en) 2014-02-21
CN102136432B (en) 2013-09-11

Similar Documents

Publication Publication Date Title
GB2520905A (en) Advanced handler wafer debonding method
MY160364A (en) Adhesive tape for manufacturing electronic components
US20100263204A1 (en) High temperature composite tape and method for manufacturing the same
MY164683A (en) Manufacturing method of semiconductor device using a heat-resistant adhesive sheet
EP2626898A3 (en) Sealant laminated composite, sealed semiconductor devices mounting substrate, sealed semiconductor devices forming wafer, semiconductor apparatus, and method for manufacturing semiconductor apparatus
EP2264112A3 (en) Temporary bonding adhesive for a semiconductor wafer and method for manufacturing a semiconductor device using the same, and use of a resin composition as a temporary bonding adhesive
EP2248165A4 (en) Process of grounding heat spreader/stiffener to a flip chip package using solder and film adhesive
WO2011100647A3 (en) Double-sided reusable template for fabrication of semiconductor substrates for photovoltaic cell and microelectronics device manufacturing
SG113568A1 (en) Process for producing semiconductor devices, and heat resistant adhesive tape used in this process
MY196760A (en) Resin composition, resin layer, permanent adhesive, adhesive for temporary bonding, laminated film, processed wafer and method for manufacturing electronic component or semiconductor device
TWI696682B (en) Surface protection film
MY160731A (en) Method for manufacturing electronic parts
PH12016500029B1 (en) Cover tape for packaging electronic part
MY168172A (en) Adhesive sheet manufacturing semiconductor device and manufacturing method of semiconductor device
JP2014150253A5 (en)
PH12018500851A1 (en) First protective film forming sheet
MY162038A (en) Die bonding apparatus
JP2016222863A (en) Adhesive tape for masking
JP5548077B2 (en) Resin-sealing adhesive tape and method for manufacturing resin-sealed semiconductor device
MY178992A (en) Die attachment apparatus and method utilizing activated forming gas
WO2012121022A1 (en) Protective tape
SG169262A1 (en) Adhesive sheet for plating
MY149076A (en) Lamination method of adhesive tape and lead frame
WO2008120564A1 (en) Mounting structure of electronic component and method for mounting electronic component
TW201613011A (en) Method and apparatus for manufacturing semiconductor devices