TW201126617A - Manufacturing method of semiconductor device using a heat-resistant adhesive sheet - Google Patents

Manufacturing method of semiconductor device using a heat-resistant adhesive sheet Download PDF

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TW201126617A
TW201126617A TW099120799A TW99120799A TW201126617A TW 201126617 A TW201126617 A TW 201126617A TW 099120799 A TW099120799 A TW 099120799A TW 99120799 A TW99120799 A TW 99120799A TW 201126617 A TW201126617 A TW 201126617A
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Taiwan
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heat
resistant adhesive
adhesive sheet
lead frame
resin
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TW099120799A
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Chinese (zh)
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TWI427715B (en
Inventor
Yun-Min Park
Ki-Jeong Moon
Hae-Sang Jeon
Sung-Hwan Choi
Chang-Hoon Sim
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Toray Saehan Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector involving a temporary auxiliary member not forming part of the bonding apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector involving a temporary auxiliary member not forming part of the bonding apparatus, e.g. removable or sacrificial coating, film or substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Die Bonding (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Adhesive Tapes (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

This disclosure provides a method for manufacturing semiconductor devices using heat-resistant adhesive sheets, more specifically to a method for manufacturing semiconductor devices using heat-resistant adhesive sheets which can preclude defective products caused by adhesive sheets during the installation process by attaching the heat-resistant adhesive sheets after the installation process in which the heat-resistant adhesive sheets are exposed to high temperature for a long time, which not only can desirably prevent the leakage of resin with high wettability of an adhesive layer during the sealing process, but also can prevent any residues from remaining on an attachment surface during the peeling process with the heat-resistance secured by a cross-linking reaction through energy-beam irradiation, and which can avoid oxidation on the attachment surface of metal or the like at high temperature, thereby securing reliability and workability. A method for manufacturing semiconductor devices using heat-resistant adhesive sheets comprising the processes of: (a) preparing a metallic lead frame; (b) installing a semiconductor chip onto the metallic lead frame; (c) connecting leads of the metallic lead frame with the semiconductor chip through wires; (d) attaching and laminating the metallic lead frame that has the semiconductor chip installed thereon and the wires connected thereto with a heat-resistant adhesive sheet; (e) sealing the semiconductor chip with a sealing resin; and (f) removing the heat-resistant adhesive sheet after the completion of the sealing.

Description

201126617 六、發明說明： c發明戶斤屬之技術領域3 領域 此揭露一種係有關於一種使用耐熱性黏著片製造半導 體裝置之方法，更特別地係一種用於使用耐熱性黏著片製 造半導體裝置之方法，其可藉由於其間耐熱性黏著片被曝 置於高溫持續一長時間之安裝方法後附接此耐熱性黏著片 而排除於安裝方法期間因黏著片造成之缺陷產品，其不僅 可所欲地避免一黏著層之具高濕潤性之樹脂於密封方法期 間漏出，而且亦可於以藉由經能量束照射之交聯反應固定 之耐熱性物之剝離方法期間避免任何殘質留於一附接表面 上，且其可避免於高溫時於金屬等之附接表面上之氧化反 應，因此，綠保可靠性及加工性。 【先前技術3 背景 一般，一QFN(四方扁平無導線)之半導體係一種半導體 製造技術型式，其中，一導線端子被置於一封裝物内。作 為用於製造QFN之方法之一例子，下列技術一般係已知。 個別之半導體單元係經由下述製造：一用於使一耐熱性帶 材附接至一外墊材側上之層合步驟；一用於使一半導體晶 片結合於一金屬導線架之一晶粒墊材上安裝步驟；一用於 以一密封樹脂密封導線架之半導體晶片側及獲得一經密封 之結構之密封步驟；一用於使一黏著片與導線架分離之剝 離步驟；及一用於使經密封之結構切成個別之半導體裝置 201126617 之切割步驟。於藉由例示-使用習知技藝之料膜製造半 導體裝置之方法之一實施例之示意處理圖之證 <弟1至5圖之此 方法之5羊細S兒明’此程序包含：首先，（a)—夢由估 曰ty從—點著 片附接至一金屬導線架之層合方法’（b)一使—半導體曰曰片 安裝於金屬導線架上之方法，（c)一經由線材使半導體晶片 與金屬導線架連接之方法，⑷一以一密封樹脂密封：;體 晶片之方法，（e)—於密封完成後移除黏著片之方法等。 如上所述，用於製造QFN半導體裝置之程序—般包人 -於範圍從150。(：至250〇C之高溫之方法。特別地，使^ 熱性黏著#製造半導體裝置之方法係於附接至金屬導線架 後於170°C之晶粒附接方法期間接受曝置於熱二小時，且於 200~250 C之線結合方法期間二小時。因此，半導體妒置不 僅需於高溫維持高程度之尺寸穩定性，且亦避免密封方去 期間由於密封樹脂壓力之諸如於黏著片與導線架之間溢料 (mold flash)之黏著缺陷。此外，需要使黏著片於未於金屬 導線架上留下任何殘質而被剝離，藉此，滿足於高溫時之 所有處理性質之要求。 為符合如上所述之此等要求，一耐熱性聚醯亞胺膜於 習知技藝之黏著片作為一基材，且一耐熱性黏著樹脂層添 加至此耐熱性基材上。典型上，此黏著樹脂可包含一以矽 為主之黏著樹脂及一以丙烯系為主之黏著樹脂，且此黏著 樹脂係用於如於韓國專利註冊第KR 1〇_〇665441及KR 10-0572191號案及美國專利第us677〇79號案所揭示之一用 於製造半導體之方法。 201126617 使用如上之耐熱性黏著片製造半導體裝置之方法有時 可使用膠替代黏著劑，且此膠可包含混合在一起之一熱固 性（或熱可固化）之樹脂及一熱塑性樹脂。典型上，如韓國專 利申請案第2004-00423658號案中所揭示，NBR/環氧樹脂被 使用。 但是，以矽為主之黏著劑具有當剝離此黏著劑時污染 附接此黏著劑之表面或形成㈣著劑殘f，及於高溫時藉 由自夕黏著劑之組份產生之氣體組份氧化一導線架之附接 表面之問題。此外，因為熱固性丙齡黏著劑由於缺乏耐 熱陡於約1GG°C至15G°C開始分解，黏著劑殘f會由於降低 之内部黏結而於附接表面上產生。 此外’上述膠之熱gj性/熱塑性樹脂之混合物會於加熱 方去期間轉發性氣體纟讀造成差的線結合 ，及由於增加 之固化收縮及黏著之剝離問題。 …:者’半導體裝置之尺寸穩定性會由於在高溫時製造 ^導祖裝置之方法_金料線架與耐熱性黏著片間之熱 4 '差異而^維持，其會造成於安裝方法期間之安 褒位置錯位，目此，糾㈣率增加。 [習知技藝文獻] [專利文獻] (專利文獻1)韓國專觀冊第KR嶋5糾號案 H文獻2)韓國專利註冊第kr 1〇_〇572191號案 專j文獻3)韓國專利申請案公告第2004-00423658號 案 201126617 (專利文獻4)美國專利第US 677079號案 【發明内容】 概要 本揭露提供一種使用具有能與一金屬導線架結合之濕 潤性之耐熱性黏著片製造半導體裝置之方法，其於係半導 體高溫方法之一安裝方法後結合一半導體黏著片期間未對 其施用一輥式或熱式壓製。 此外，本揭露提供一種使用耐熱性黏著片製造半導體 裝置之方法，其不僅能經由對一黏著層之能量束照射誘發 交聯反應而確保於高溫之樹脂密封方法期間之耐熱性，且 亦能於剝離期間於一黏著表面上未留下任何殘質而被剝 離。 本揭露之此等及其它目的及優點由此揭露之下列詳細 說明會變明顯。 上述目的係藉由一種使用耐熱性黏著片製造半導體裝 置之方法達成，包含如下之方法：（a)製備一金屬導線架； (b) 使一半導體晶片於無一黏著片而安裝於金屬導線架上； (c) 使金屬導線架之導線與半導體晶片於無黏著片而經由線 材連接；（d)以一耐熱性黏著片附接及層合具有安裝於其上 之半導體晶片及與其連接之線材之金屬導線架；（e)以一密 封樹脂密封半導體晶片；及⑴於完成密封後移除耐熱性黏 著片。 在此，耐熱性黏著片可包含一耐熱性基材，及一塗覆 於此基材之至少一側上之对熱性黏著層，其具有一含有一 201126617 • 能量束可固化之寡聚物樹脂、一能量束起始劑、一熱可固 • 化之丙烯系黏著樹脂，及一熱固化劑之組成物。 較佳地’耐熱性基材係至少一選自聚酯、聚醯亞胺、 聚醯胺、聚醚硬、聚苯硫醚、聚醚酮、聚醚醚酮、三乙醯 基纖維素、聚醚醯胺、聚苯二曱酸乙二酯、聚丙烯，及聚 碳酸S旨之膜。 耐熱性黏著層較佳具有1μπι~50μηι之厚度。 較佳係依據設計目的組合地使用耐熱性黏著層之一或 多種能量束可固化之寡聚物樹脂，且被使用之能量束可固 化之寡聚物樹脂之量係每1〇〇重量份之熱可固化之丙烯系 黏者樹脂為0.1至40重量份。 熱可固化之丙烯系黏著樹脂較佳係具有40,000至 3,000,000之重量平均分子量。 此外’較佳係依據設計目的組合地使用耐熱性黏著層 之一或多種能量束起始劑，且被使用之能量束起始劑之量 係每100重量份之能量束可固化之寡聚物樹脂為〇.〇1至20 重量份。 再者’當溫度以1〇。(：/分鐘之速率從室溫增至250°c 時，耐熱性黏著層之重量降低較佳係少於5%。 較佳地，耐熱性黏著片保護一金屬表面免於在耐熱性 黏著片附接至此金屬表面後氧化反應於250°C之高溫時於 此金屬表面上發生。 再者，耐熱性黏著片係於無對其施加之一輥式或熱式 壓製而藉由耐熱性黏著層之濕潤性附接，且於耐熱性黏著 201126617 片附接至一銅箔且於室溫維持10分鐘後具有1 g f/ i η至5 0 0 gf/in之黏著強度。 [此揭露之功效] 本揭露具有藉由於其間耐熱性黏著片被曝置於高溫持 續一段長時間之安裝方法後附接耐熱性黏著片而排除於安 裝方法期間由黏著片而造成之缺陷產物之功效。 此外，本揭露具有不僅所欲地避免一黏著層之具高濕 潤性之樹脂於密封方法期間漏出，而且亦於以藉由經能量 束照射之交聯反應固定之耐熱性物之剝離方法期間避免任 何殘質留於一附接表面上，且避免於高溫時於金屬等之附 接表面上之氧化反應，因此，確保可靠性及加工性之功效。 圖式簡單說明 第1圖顯示一種藉由使一黏著片附接至一習知技藝之 金屬導線架之層合方法； 第2圖顯示一種使一半導體晶片安裝於習知技藝之金 屬導線架上之方法； 第3圖顯示一種經由線材使習知技藝之半導體晶片與 金屬導線架之導線連接之方法； 第4圖顯示一種使用一習知技藝之密封樹脂密封半導 體晶片之方法； 第5圖顯示一種於密封完成後移除黏著片之方法； 第6圖顯示一種依據本揭露製備一金屬導線架之方法； 第7圖顯示一種依據本揭露於無黏著片而使一半導體 晶片安裝於金屬導線架上之方法； 201126617 金二:===，使 第9圖顯示〜俨Μ + 念， 合具有安裝於款上=，—㈣性黏著片附接及層 導線架；、上之+導體晶片及與其連接之線材之金屬 第10圖顯$ 晶片之方法；足 第11圖顯禾 黏著片之方法。 種依據本揭露以一密封樹脂密封半導體 種依據本揭露於完成密封後移除耐熱性 1:耐熱性黏著層 2:对熱性棊持層 3:耐熱性黏著片 4:具-金屬表面之導線架 5:半導體晶片 6··膠 7:線材 8:密封樹月旨 詳細說明 其後’此揭露之較佳實施例將參考附圖詳細說明。需 瞭解此揭露之較佳實施例之詳細說明係僅以例示而提供， 因此’於此揭露之精神及範圍内之各種改變及修改對熟習 此項技藝者係明顯。 201126617 本揭露係有關於一種使用用於製造半導體裝置之耐熱 性黏著片製造半導體裝置之方法，更特別地係一種製造半 導體裝置之方法，其於此製造半導體裝置之方法，於使一 半導體晶片結合於金屬導線架之一晶粒墊材上之安裝方法 後，使用耐熱性黏著片附接至一金屬導線架，以便於藉由 以密封樹脂密封導線架之一半導體晶片側獲得密封結構之 密封方法期間所欲地避免密封樹脂漏出，不會於其後之方 法期間造成任何問題，且於附接黏著片期間無對其施加之 輥式或熱式壓製而具有能附接金屬導線架之濕潤性。 於例示依據本揭露之使用耐熱性黏著片製造半導體裝 置之方法之一實施例之例示處理圖之第6至11圖所示之更 詳細說明，此方法包含如下之方法：（a)製備一金屬導線架； (b) 於無一黏著片而使一半導體晶片安裝於金屬導線架上； (c) 於無黏者片而經由線材使導線架之導線與半導體晶片 連接；（d)以一耐熱性黏著片附接及層合具有安裝於其上之 半導體晶片及與其連接之線材之金屬導線架；（幻以一密封 樹脂密封半導體晶片；及(f)於完成密封後移除耐熱性黏著 此外，於本揭露之耐熱性黏著片可使用一耐熱性基 材，包含一塗覆於耐熱性基材之至少一側上之具有一含有 一能量束可固化及熱可固化之組份之組成物之财熱性黏著 層，且具有於一安裝方法於一用於製造半導體裝置之程序 完成後於無對其施用輥式或熱式壓製而能附接之濕潤性。 再者，财熱性黏著層以能量束照射以觸發黏著層之交聯反 10 201126617 應，藉此形成一具高耐熱性之交聯結構。因此，用以形成 耐熱性黏著層之組成物包含一能量束可固化之寡聚物樹脂 及一能量束起始劑，且選擇性地包含一熱可固化之丙稀系 黏著樹脂及一熱固化劑。 雖然於此揭露之财熱性黏著片之对熱性黏著層之厚度 不受限制，但非較佳地使用太薄之耐熱性黏著層以便於無 對其施用之輥式或熱式壓製維持能附接金屬導線架之濕潤 性，亦非所欲地使用太厚之耐熱性黏著層以便於密封方法 對其施用之高溫及高壓後之剝離期間不會留下任何殘質。 可以平衡方式滿足此等對立性質之厚度較佳係Ιμηι至 50μηι，且更佳係4μιη至25μιη。 其後，本揭露之組份將詳細說明。 耐熱性基材 此揭露之对熱性黏著片之对熱性基材較佳地，但不受 限地，係選自聚酯、聚醯亞胺、聚醯胺、聚醚砜、聚苯硫 醚、聚醚酮、聚醚醚酮、三乙醯基纖維素、聚醚醯胺、聚 苯二甲酸乙二酯、聚丙烯，及聚碳酸酯之至少一（塑膠）膜。 此外，一金屬箔可用於此基材以替代一（塑膠)膜，且特別 係選自由鋁、鎂、鈦、鉻、錳、鐵、鎳、鋅或錫所組成之 一箱、一合金羯，及一經電鍵之羯之至少一金屬箔可被使 用。 若如上之基材膜與導線架間之熱膨脹變得更大，當導 線架於高溫處理後回到室溫時翹曲會於與片材附接之導線 架上發生。此種麵曲於模製方法中會造成尺寸不穩定，因 11 201126617 此’由於位置變形而發生溢料缺陷。因此，作為一可避免 上述情況之对熱性基材，較佳係使用一具有15 〇。c或更高之 玻璃轉移溫度之_熱性膜，且基材之熱膨脹係數於·。c 至2〇〇。(：較佳係5卯心至如ppm/〇c，且更佳係:i〇 ppm/〇c 至25 ppm/cc。此外，基材之熱收縮率於2〇〇。匸持續二小時 較佳係0·01%至0.5%，且更佳係〇.03%至〇.1%。 點著組成物 用於此揭露之耐熱性黏著片之耐熱性黏著層之能量束 可固化之寡聚物樹脂包含以胺基曱酸醋為主之丙稀酸醋、 聚鱗及聚醋丙稀酸S旨、環氧丙稀酸g旨、丙烯系丙稀酸醋等， 且除丙稀㈣脂外亦包含重氮化之胺基贿清漆樹脂、含 肉桂醯基之聚合物、光__子可固化之樹脂、於分子終端 具有一芳基基團之硫醇可加成之樹脂。再者，高能量束反 應性聚合物包含環氧化之聚了二烯、不飽和聚_、聚甲基 丙烯酸縮水甘油酯、聚丙烯醯胺，及聚乙烯基矽氧烷。若 此此量束可固化之养聚物樹脂被使用，上述母料並非總 是必要。上述樹脂之活性官能基團之數量係較佳係2至1〇， 且更佳係2至6。此外，此丙烯系寡聚物樹脂之重量平均分 子量較佳係300至8,000。上述樹脂可被設計成與能量束起 始劑反應以賦予耐熱性黏著層内部黏結強度。因此，一具 有兩耐熱性且不會留下任何殘質之黏著層可被獲得。 用於此揭露之耐熱性黏著片之耐熱性黏著層之熱可固 化之丙烯系黏著樹脂包含（曱基）丙烯酸烷酯，諸如，（甲基） 丙烯酸甲酯、（甲基）丙烯酸乙酯、（甲基）丙烯酸丁酯、（甲基） 12 201126617 丙烯酸異戊酯、（甲基）丙烯酸正己酯、（F基）丙烯酸2乙基 己酯' (f基）丙烯酸異辛酯、（甲基）丙烯酸異壬酯、（甲基) 丙烯酸癸醋、（甲基）丙烯酸十二烷酯等，且用以提供黏1 性。此外，此等熱可固化之丙烯系黏著樹脂較佳具有 40,000〜3,0〇〇,〇〇〇 ’且更佳係700，_〜12〇〇，_，之重量平 均分子量。此係因為若熱可固化之丙烯系黏著樹脂之重量 平均分子量低於40,000，則黏著樹脂不具有足夠耐熱性， 且若超過3,000,〇〇〇，則固化反應會由於高分子量而受影 響。藉由與熱固化劑一起使用此等丙烯系黏著樹脂，可確 保黏結強度且亦避免黏著殘質發生。 再者，於此揭露之耐熱性黏著片之混合丙稀系黏著劑 需包含熱一固化劑及一能量束起始劑以便觸發一固化反 應。此熱固化劑之例子可包含以異氰酸酯為主、以環氧為 主、口丫丙咬為主、以螯合劑為±、以有機酸為主，及以三 聚氰胺為主交聯劑。雖餘目的而定所使用之熱固化劑之 量不受限’但較佳係每觸重量份之丙烯系黏著樹脂使用 0.1至40重量份，且更佳係no重量份。因此，丙稀系黏 著劑可被設計成藉由使其與熱固化劑使用而展現適當黏著 強度。 再者’能量束起始劑包含苯甲基二曱基縮酮、經基環 己基、苯基酮、經基二甲基苯乙酮、曱基_[4甲基噻吩基]_2_ 嗎琳丙酮、4-苯甲基-4，-甲基三苯基硫化物、異丙基〇塞吨 酮' 2-氯售吨酮、乙基_4_二甲基胺基苯甲酸@旨、2乙基己 基-4-一曱基胺基苯甲酸酯、二苯基酮、4-甲基二苯基酮、 13 201126617 曱基-鄰-苯并-苯曱酸酯、甲基苯曱醯基曱酸酯、4-苯基二 苯基銅、2,4,6-三甲基苯曱醯基-二苯基膦、2-經基-1,2-苯基 乙酮等。此等能量束起始劑可依據黏著層之塗覆及乾燥溫 度及欲被使用之能量束之照射條件而選擇。欲被使用之能 量束起始劑之量較佳係每100重量份之能量束可固化之寡 聚物樹脂為約0.01至20重量份。此外，較佳係依設計目的 使用組合之一或多種能量束起始劑。 製造一耐熱性黏著層之方法 本揭露之一種製造一耐熱性黏著片之方法並不受限 制，但是，一包含一能量束可固化之丙烯系寡聚物樹脂、 熱可固化之黏著樹脂，及一能量束起始劑及―用於固化 此等樹脂之熱固化劑組份之黏著組成物係與一溶劑一起製 備。黏著組成物係具依據設計目的之黏度而製備。具有不 同之技術可用以製造一耐熱性黏著層，包含一鑄造方法， 其間黏著組成物係直接塗覆於一耐熱性基材上且被乾燥而 形成一黏著層，及一轉移方法，其間黏著組成物係塗覆於 一離型膜上且被乾燥形成-點著層，，然後，此黏著層層合 於耐熱性基材上，其後將其轉移至_性基材h於此等 凊况黏著層之塗覆厚度較佳係1#111至5(^〇1，且更佳係4 至 25μηι。 能量束固化方法 為固化依據如上所述方法製造之賴㈣著層，諸如 可士射線、紫外線及電子束之能量束被用於固化反應以於 黏著層產生-交聯結構。雖然能量束之種類不被特別限 14 201126617 制，但較佳係使用紫外線。紫外線固化，其係一持續極短 時間之化學反應’需要一預定量之光線以完全固化此黏著 層。若用於固化之光線量少於預定量，則固化產物會於其 上含有未被固化之部份。另一方面，若用於固化之光.線量 多於必需，則會造成一基材膜或一黏著樹脂分解。此外， 因為紫外線係伴隨紅外線，紅外線之熱會造成黏著片上之 不利作用。因此，光線之適當量以紫外線a(uv-a)範圍為 基準車交佳係10mJ/cm2至2,000 mJ/cm2，且更佳係i〇〇mj/cm2 至l，000mJ/cm2。且紫外線燈被分類成汞燈，其具有短波長 (紫外線B，C)範圍作為其主要範圍，及金屬鹵化物燈，其 具有長波長（紫外線A)範圍作為基主要範圍。此二種燈皆可 知·合使用，或一種燈可用於實施固化，且光線之量可藉由 改變燈之高度及紫外線照射時間而調整。 本揭露將以如下之較佳實施例詳細說明；但是，此揭 露不限於此等實施例。 [實施例1] 首先’每100重量份之具有約1，000,000之分子量及於其 匈鏈上之一羥基基團之丙烯系共聚物黏著劑為1〇〇重量份 支乙酸乙酯（EA)被添加且攪拌一小時。然後，5重量份之苯 基酚醛清漆丙烯酸酯，其係一能量束可固化之丙烯系寡聚 物，被添加且攪拌一小時，且〇8重量份之以三聚氰胺為主 之熱固化劑及〇·4重量份之一以有機酸為主固化加速劑被 忝加且另外攪拌一小時。最後，〇 5重量份之二苯基(2 4 6_ 〜曱基苯曱醯基)氧化膦，其係一光起始劑，被添加且攪拌 15 201126617 一小時以獲得一能量束可固化之黏著組成物。此黏著組成 物被塗覆於一 25μιη厚度之聚醯亞胺膜（SKCKolon，LN100) 上，且於130°C乾燥三分鐘，其後以能量束固化。其後，具 有塗覆於其上之黏著組成物之此膜被附接至一 38μιΏ厚度 之PET離型膜（Toraysaehan Co·，XD5BR)，且接受於45°C之 老化處理48小時以產生具有—1〇μιη之黏著層之一黏著片。 [實施例2] 首先’每100重量份之具有約1 000 000之分子量及於其 側鏈上之一羥基基團之丙烯系共聚物黏著劑為i 〇 〇重量份 之乙酸乙酯（EA)被添加且授拌一小時。然後，1重量份之苯 基酚醛清漆丙烯酸酯，其係_能量束可固化之丙烯系寡聚 物，及4重量份之一以胺基甲酸酯為主之丙烯酸酯被添加且 攪拌一小時，且0.8重量份之一以三聚氰胺為主之熱固化劑 及0.4重量份之一以有機酸為主之固化加速劑被添加且另 外攪拌一小時。最後，0.005重量份之二苯基(2,4,6_三曱基 苯甲醯基)氧化膦，其係一光起始劑，被添加且攪拌一小時 以獲得一能量束可固化之黏著組成物。黏著組成物塗覆於 一 25μηι厚度之聚醯亞胺膜（SKCKolon，LN100)上，且於 130°C乾燥三分鐘，其後以能量束固化。其後，具有塗覆於 其上之黏著組成物之膜附接至一 38μιη厚度之PET離型膜 (ToraysaehanCo.，XD5BR) ’且接受45。(：之老化處理48小時 產生一具有一 1〇μπι之黏著層之黏著片。 [比較例1] 首先，每100重量份之具有約1，000,000之分子量及於其 16 201126617201126617 VI. Description of the Invention: c Invented by the technical field of the households 3 FIELD OF THE INVENTION The present invention relates to a method for manufacturing a semiconductor device using a heat-resistant adhesive sheet, and more particularly to a semiconductor device using a heat-resistant adhesive sheet. The method can be attached to the heat-resistant adhesive sheet after the heat-resistant adhesive sheet is exposed to a high temperature for a long time, and is excluded from the defective product caused by the adhesive sheet during the mounting method, which is not only desirable A resin having high wettability of an adhesive layer is prevented from leaking during the sealing method, and any residue remaining in an attachment method by a heat-resistant substance fixed by a cross-linking reaction by an energy beam can be avoided. On the surface, it can avoid the oxidation reaction on the attachment surface of metal or the like at a high temperature, and therefore, the green guarantee reliability and workability. [Prior Art 3 Background] Generally, a QFN (Quad Flat Unwired) semiconductor is a semiconductor manufacturing technology in which a wire terminal is placed in a package. As an example of a method for manufacturing a QFN, the following techniques are generally known. The individual semiconductor units are manufactured by a lamination step for attaching a heat resistant strip to an outer mat side; a method for bonding a semiconductor wafer to a die of a metal lead frame a step of mounting on the mat; a sealing step for sealing the side of the semiconductor wafer with a sealing resin and obtaining a sealed structure; a peeling step for separating an adhesive sheet from the lead frame; and a step for making The sealed structure is diced into individual semiconductor devices 201126617. The illustration of the schematic processing diagram of an embodiment of a method for fabricating a semiconductor device using a film of a conventional technique <1, 5 to 5, the method of the method is as follows: (a) - the method of grading from the point of attaching a piece of film to a metal lead frame' (b) a method of mounting a semiconductor chip on a metal lead frame, (c) one A method of connecting a semiconductor wafer to a metal lead frame via a wire, (4) a method of sealing with a sealing resin: a method of a bulk wafer, (e) a method of removing an adhesive sheet after completion of sealing, and the like. As noted above, the procedures used to fabricate QFN semiconductor devices are generally packaged from 150. (: a method of high temperature up to 250 ° C. In particular, the method of manufacturing a semiconductor device is to be exposed to heat during a die attach method at 170 ° C after attachment to a metal lead frame Hours, and two hours during the bonding method of 200~250 C. Therefore, the semiconductor device not only needs to maintain a high degree of dimensional stability at high temperatures, but also avoids sealing adhesive pressure such as adhesive sheets during sealing. The adhesive defect of the mold flash between the lead frames. In addition, the adhesive sheet needs to be peeled off without leaving any residue on the metal lead frame, thereby satisfying all the processing properties at high temperatures. In order to meet the above requirements, a heat-resistant polyimide film is used as a substrate in a conventional adhesive sheet, and a heat-resistant adhesive resin layer is added to the heat-resistant substrate. Typically, the adhesive is adhered. The resin may comprise a ruthenium-based adhesive resin and a propylene-based adhesive resin, and the adhesive resin is used in the Korean Patent Registration No. KR 1〇_〇665441 and KR 10-0572191 and the United States. Special One of the methods for fabricating a semiconductor disclosed in the case of us677.79. 201126617 A method of manufacturing a semiconductor device using the above heat-resistant adhesive sheet may sometimes use a glue instead of an adhesive, and the glue may contain a thermosetting property mixed together. (or heat curable) resin and a thermoplastic resin. NBR/epoxy resin is typically used as disclosed in Korean Patent Application No. 2004-00423658. However, the adhesive based on ruthenium has When the adhesive is peeled off, the surface of the adhesive is contaminated or the (four) agent residue f is formed, and the problem of oxidizing the attachment surface of a lead frame by the gas component generated by the component of the self-adhesive agent at a high temperature. In addition, since the thermosetting C-age adhesive begins to decompose due to lack of heat resistance from about 1 GG ° C to 15 G ° C, the adhesive residue f is generated on the attachment surface due to the reduced internal adhesion. /The mixture of thermoplastic resin will cause poor wire bonding during the heating process, and the problem of peeling due to increased curing shrinkage and adhesion. The dimensional stability of the device may be maintained due to the difference in the heat between the gold wire holder and the heat-resistant adhesive sheet, which may cause misplacement of the ampoule during the mounting method. Therefore, the rate of correction (four) is increased. [Practical literature] [Patent Literature] (Patent Document 1) Korean Monograph Book KR嶋5 Correction Case H Document 2) Korean Patent Registration No. kr 1〇_〇572191 Japanese Patent Application Publication No. 2004-00423658 No. 201126617 (Patent Document 4) U.S. Patent No. 677,079 [Disclosure] SUMMARY OF THE INVENTION The present disclosure provides a wettability that can be combined with a metal lead frame. The heat-resistant adhesive sheet is a method of manufacturing a semiconductor device which is not subjected to a roll or hot press during bonding to a semiconductor adhesive sheet after one of the semiconductor high-temperature methods. Further, the present disclosure provides a method of manufacturing a semiconductor device using a heat-resistant adhesive sheet which can not only ensure heat resistance during a high-temperature resin sealing method by inducing a crosslinking reaction by irradiation of an energy beam of an adhesive layer, but also It was peeled off without leaving any residue on an adhesive surface during peeling. These and other objects and advantages of the present invention will become apparent from the following detailed description. The above object is achieved by a method for manufacturing a semiconductor device using a heat-resistant adhesive sheet, comprising the steps of: (a) preparing a metal lead frame; (b) mounting a semiconductor wafer on the metal lead frame without an adhesive sheet; (c) connecting the wires of the metal lead frame and the semiconductor wafer to the non-adhesive sheet via the wire; (d) attaching and laminating the semiconductor wafer mounted thereon and the wire connected thereto by a heat-resistant adhesive sheet a metal lead frame; (e) sealing the semiconductor wafer with a sealing resin; and (1) removing the heat resistant adhesive sheet after the sealing is completed. Here, the heat-resistant adhesive sheet may comprise a heat-resistant substrate, and a heat-adhesive layer coated on at least one side of the substrate, having an oligomeric resin containing a 201126617 • energy beam curable An energy beam initiator, a heat-curable propylene-based adhesive resin, and a heat curing agent composition. Preferably, the heat resistant substrate is at least one selected from the group consisting of polyester, polyimine, polyamine, polyether hard, polyphenylene sulfide, polyether ketone, polyether ether ketone, triethyl fluorenyl cellulose, A film of polyether decylamine, polyethylene terephthalate, polypropylene, and polycarbonate. The heat resistant adhesive layer preferably has a thickness of from 1 μm to 50 μm. Preferably, one or more energy beam curable oligomer resins are used in combination according to the design purpose, and the amount of the energy beam curable oligomer resin used is 1 part by weight. The heat curable propylene-based adhesive resin is from 0.1 to 40 parts by weight. The heat curable propylene-based adhesive resin preferably has a weight average molecular weight of 40,000 to 3,000,000. In addition, it is preferred to use one or more energy beam initiators in combination with the heat-resistant adhesive layer according to the design purpose, and the amount of the energy beam initiator used is 100 parts by weight of the energy beam-curable oligomer. The resin is 〇.〇 1 to 20 parts by weight. Furthermore, 'when the temperature is 1 〇. When the rate of (:/min is increased from room temperature to 250 ° C, the weight loss of the heat-resistant adhesive layer is preferably less than 5%. Preferably, the heat-resistant adhesive sheet protects a metal surface from heat-resistant adhesive sheets. After being attached to the surface of the metal, the oxidation reaction occurs on the surface of the metal at a high temperature of 250 ° C. Further, the heat-resistant adhesive sheet is attached to the heat-resistant adhesive layer without applying one of the roll or hot pressing thereto. The wettability is attached, and the heat-resistant adhesive 201126617 piece is attached to a copper foil and has an adhesion strength of 1 gf/i η to 500 gf/in after being maintained at room temperature for 10 minutes. [Effect of this disclosure] The present invention has the effect of eliminating the defect product caused by the adhesive sheet during the mounting method by attaching the heat-resistant adhesive sheet after the heat-resistant adhesive sheet is exposed to a high temperature for a long period of time. It is not only desirable to avoid leakage of a highly wet resin of an adhesive layer during the sealing process, but also to avoid any residue remaining during the peeling method of the heat resistant material fixed by the cross-linking reaction by the energy beam irradiation. One Attached to the surface, and avoids the oxidation reaction on the attachment surface of metal or the like at a high temperature, thereby ensuring the reliability and processability. Brief Description of the Drawing Figure 1 shows an example of attaching an adhesive sheet A method of laminating a metal lead frame of a conventional technique; FIG. 2 shows a method of mounting a semiconductor wafer on a metal lead frame of the prior art; and FIG. 3 shows a semiconductor chip of the prior art via a wire Method of connecting a wire to a metal lead frame; Figure 4 shows a method of sealing a semiconductor wafer using a conventional sealing resin; Figure 5 shows a method of removing an adhesive sheet after sealing is completed; Figure 6 shows a method A method of preparing a metal lead frame according to the present disclosure; FIG. 7 shows a method for mounting a semiconductor wafer on a metal lead frame according to the present disclosure without a sticker; 201126617 Gold 2: ===, so that FIG. 9 shows ~俨Μ+念, with the installation of the paragraph =, - (4) adhesive sheet attachment and layer lead frame;, the + conductor wafer and the metal of the wire connected to it 10th The method of the wafer; the method of the eleventh figure shows the method of sealing the film. According to the disclosure, the semiconductor is sealed with a sealing resin. According to the disclosure, the heat resistance is removed after the sealing is completed. 1: heat-resistant adhesive layer 2: thermal resistance Layer 3: Heat-resistant adhesive sheet 4: Lead frame with metal surface 5: Semiconductor wafer 6··Glue 7: Wire 8: Sealed tree, detailed description of the present invention will be described in detail with reference to the accompanying drawings The detailed description of the preferred embodiments of the disclosure is to be understood by the description of the embodiments of the present invention, and it is obvious to those skilled in the art. A method of fabricating a semiconductor device using a heat-resistant adhesive sheet for fabricating a semiconductor device, and more particularly, a method of fabricating a semiconductor device, wherein the method of fabricating the semiconductor device is to bond a semiconductor wafer to a metal lead frame After mounting on a die pad, a heat-resistant adhesive sheet is attached to a metal lead frame to seal one half of the lead frame with a sealing resin The sealing method of the sealing structure is obtained during the sealing process of the conductor wafer side to avoid leakage of the sealing resin, which does not cause any problems during the subsequent method, and has no roll or hot pressing applied thereto during the attachment of the adhesive sheet. The wettability of the metal lead frame can be attached. A more detailed description of the sixth to eleventh exemplary processing diagrams of an embodiment of a method for fabricating a semiconductor device using a heat-resistant adhesive sheet according to the present disclosure, the method comprising the following method: (a) preparing a metal (b) mounting a semiconductor wafer on a metal lead frame without an adhesive sheet; (c) connecting the lead wire of the lead frame to the semiconductor wafer via a wire without a sticker; (d) being heat resistant Attaching and laminating a metal lead frame having a semiconductor wafer mounted thereon and a wire connected thereto; (the sealing of the semiconductor wafer with a sealing resin; and (f) removing the heat-resistant adhesive after the sealing is completed The heat-resistant adhesive sheet disclosed in the present invention may use a heat-resistant substrate comprising a composition coated on at least one side of the heat-resistant substrate and having a component containing an energy beam curable and heat curable. The thermal adhesive layer has a wettability that can be attached after a process for manufacturing a semiconductor device is completed without applying a roll or a hot press. The layer is irradiated with an energy beam to trigger the cross-linking of the adhesive layer. Thus, a cross-linked structure having high heat resistance is formed. Therefore, the composition for forming the heat-resistant adhesive layer contains an energy beam curable. An oligomer resin and an energy beam initiator, and optionally comprising a heat curable acryl-based adhesive resin and a heat curing agent. Although the thickness of the heat-adhesive layer of the heat-sensitive adhesive sheet disclosed herein is not Restricted, but it is not preferable to use a too thin heat-resistant adhesive layer so as to maintain the wettability of the attached metal lead frame without the roll or hot pressing applied thereto, and to use too thick heat resistance as desired The adhesive layer is convenient for the sealing method to leave no residue during the peeling of the high temperature and high pressure applied thereto. The thickness of the opposite properties can be balanced in a manner suitable for the thickness of the Ιμηι to 50μηι, and more preferably 4μιη to 25μιη Hereinafter, the components of the present disclosure will be described in detail. Heat-Resistant Substrate The disclosed thermal substrate for the thermal adhesive sheet is preferably, but not limited to, selected from the group consisting of polyester, polyimine, Gather At least one of an amine, a polyether sulfone, a polyphenylene sulfide, a polyether ketone, a polyetheretherketone, a triethyl fluorenyl cellulose, a polyether decylamine, a polyethylene terephthalate, a polypropylene, and a polycarbonate (plastic) film. In addition, a metal foil can be used for the substrate instead of a (plastic) film, and is particularly selected from a box consisting of aluminum, magnesium, titanium, chromium, manganese, iron, nickel, zinc or tin. , an alloy crucible, and at least one metal foil after the electric button can be used. If the thermal expansion between the substrate film and the lead frame becomes larger, the wire holder warps when returned to room temperature after high temperature treatment. Will occur on the lead frame attached to the sheet. This kind of surface curvature will cause dimensional instability in the molding method, because 11 201126617 this is due to positional deformation and flashing defects. Therefore, as one can avoid the above situation For the heat substrate, a heat-sensitive film having a glass transition temperature of 15 〇 c or higher is preferably used, and the thermal expansion coefficient of the substrate is . c to 2〇〇. (: preferably from 5 hearts to ppm/〇c, and more preferably: i〇ppm/〇c to 25 ppm/cc. In addition, the substrate has a heat shrinkage of 2 〇〇. 匸 lasts for two hours. Preferably, the composition is 0. 01% to 0.5%, and more preferably 03.03% to 〇.1%. The composition is used for the energy beam curable oligomerization of the heat-resistant adhesive layer of the heat-resistant adhesive sheet disclosed herein. The resin includes acrylic acid vinegar mainly composed of amino phthalic acid vinegar, polystyrene and polyacetic acid S, acryl acrylic acid acrylate, acrylic acryl vinegar, etc., and propylene (tetra) acrylate Also included is a diazotized amine-based varnish resin, a cinnamyl-containing polymer, a photo-curable resin, and a thiol-addable resin having an aryl group at the molecular terminal. The high energy beam reactive polymer comprises an epoxidized polydiene, an unsaturated poly-, a polyglycidyl methacrylate, a polypropylene decylamine, and a polyvinyl decyl oxide. The above-mentioned masterbatch is not always necessary, and the amount of the reactive functional groups of the above resin is preferably 2 to 1 Torr, and more preferably 2 to 6. Further, the propylene is further used. The weight average molecular weight of the oligomer resin is preferably from 300 to 8,000. The above resin may be designed to react with an energy beam initiator to impart internal bonding strength to the heat resistant adhesive layer. Therefore, one has two heat resistances and does not remain. Any residual adhesive layer can be obtained. The heat-curable acryl-based adhesive resin used for the heat-resistant adhesive layer of the heat-resistant adhesive sheet disclosed herein comprises an alkyl (meth) acrylate such as (meth) acrylate Ester, ethyl (meth)acrylate, butyl (meth)acrylate, (methyl) 12 201126617 isoamyl acrylate, n-hexyl (meth) acrylate, 2-ethylhexyl (F-) acrylate (f Base) isooctyl acrylate, isodecyl (meth) acrylate, bismuth (meth) acrylate, dodecyl (meth) acrylate, etc., and used to provide adhesion. Moreover, these heat curable The propylene-based adhesive resin preferably has a weight average molecular weight of 40,000 〜3,0 〇〇, 〇〇〇' and more preferably 700, _~12 〇〇, _, because the heat-curable propylene-based adhesive The weight average molecular weight of the resin is lower than 40,000, the adhesive resin does not have sufficient heat resistance, and if it exceeds 3,000, the curing reaction is affected by the high molecular weight. By using these propylene-based adhesive resins together with the heat curing agent, the bonding strength can be ensured. Moreover, the adhesive residue is also prevented from occurring. Further, the heat-sensitive adhesive sheet disclosed herein comprises a heat-curing agent and an energy beam initiator to trigger a curing reaction. Examples may include isocyanate-based, epoxy-based, acetonide-based, chelating agent-based, organic acid-based, and melamine-based crosslinking agent. The amount of the heat curing agent is not limited 'but preferably 0.1 to 40 parts by weight, and more preferably no part by weight, per part by weight of the propylene-based adhesive resin. Therefore, the acryl-based adhesive can be designed to exhibit an appropriate adhesive strength by using it with a heat curing agent. Furthermore, the 'energy beam initiator' contains benzyldidecyl ketal, cyclohexyl ketone, phenyl ketone, dimethyl acetophenone, fluorenyl _[4 methylthienyl]_2_ morphine acetone , 4-Benzyl-4,-methyltriphenyl sulfide, isopropyl oxetane' 2-chloro ketene, ethyl-4-methyl benzoic acid @, 2, B Hexyl-4-indenylamino benzoate, diphenyl ketone, 4-methyldiphenyl ketone, 13 201126617 fluorenyl-o-benzo-benzoate, methyl benzoyl Phthalate ester, 4-phenyldiphenyl copper, 2,4,6-trimethylphenylnonyl-diphenylphosphine, 2-yl-1,2-phenylethanone, and the like. These energy beam initiators can be selected depending on the coating and drying temperature of the adhesive layer and the irradiation conditions of the energy beam to be used. The amount of the energy beam starter to be used is preferably from about 0.01 to 20 parts by weight per 100 parts by weight of the energy beam curable oligomer resin. Furthermore, it is preferred to use one or more energy beam initiators in combination for design purposes. The method for producing a heat-resistant adhesive layer is not limited, but comprises an energy beam curable propylene-based oligomer resin, a heat-curable adhesive resin, and An energy beam initiator and an adhesive composition for curing the thermosetting agent component of the resins are prepared together with a solvent. The adhesive composition is prepared according to the viscosity of the design purpose. There are different techniques for manufacturing a heat-resistant adhesive layer, including a casting method, in which an adhesive composition is directly coated on a heat-resistant substrate and dried to form an adhesive layer, and a transfer method with an adhesive composition therebetween The system is coated on a release film and dried to form a layer, and then the adhesive layer is laminated on the heat resistant substrate, and then transferred to the _ substrate h The coating thickness of the adhesive layer is preferably 1#111 to 5 (^1, and more preferably 4 to 25μηι. The energy beam curing method is to cure the layer according to the method described above, such as a ray, The ultraviolet and electron beam energy beams are used in the curing reaction to produce a cross-linked structure in the adhesive layer. Although the type of energy beam is not particularly limited to 14 201126617, it is preferred to use ultraviolet rays. UV curing is a continuous polarity. A short time chemical reaction 'requires a predetermined amount of light to completely cure the adhesive layer. If the amount of light used for curing is less than a predetermined amount, the cured product will have an uncured portion thereon. If used for The light of the light. If the amount of wire is more than necessary, it will cause decomposition of a substrate film or an adhesive resin. In addition, because the ultraviolet light is accompanied by infrared rays, the heat of infrared rays may cause an adverse effect on the adhesive sheet. Therefore, the appropriate amount of light is ultraviolet light a The range of (uv-a) is from 10 mJ/cm 2 to 2,000 mJ/cm 2 , and more preferably from i〇〇mj/cm 2 to 1,000 mJ/cm 2 , and the ultraviolet lamp is classified into a mercury lamp, which has a short The wavelength (UV B, C) range is the main range, and the metal halide lamp has a long wavelength (ultraviolet A) range as the main range. Both of these lamps can be used together, or a lamp can be used for curing. And the amount of light can be adjusted by changing the height of the lamp and the ultraviolet irradiation time. The disclosure will be described in detail in the following preferred embodiments; however, the disclosure is not limited to the embodiments. [Embodiment 1] First Each 100 parts by weight of the propylene-based copolymer adhesive having a molecular weight of about 1,000,000 and one of the hydroxyl groups on the AH chain thereof was added in an amount of 1 part by weight of ethyl acetate (EA) and stirred for one hour. Then, 5 weights A phenyl novolac acrylate which is an energy beam curable propylene-based oligomer which is added and stirred for one hour, and 8 parts by weight of a melamine-based heat curing agent and 4 parts by weight An organic acid-based curing accelerator is added and stirred for an additional hour. Finally, 5 parts by weight of diphenyl (2 4 6-nonylphenylphenyl) phosphine oxide, which is a photoinitiator , was added and stirred 15 201126617 for one hour to obtain an energy beam curable adhesive composition. The adhesive composition was coated on a 25 μm thick polyimine film (SKCKolon, LN100) at 130 ° C It was dried for three minutes and then cured with an energy beam. Thereafter, the film having the adhesive composition coated thereon was attached to a 38 μm thick PET release film (Toraysaehan Co., XD5BR) and accepted. The aging treatment at 45 ° C was carried out for 48 hours to produce an adhesive sheet having an adhesive layer of -1 μm. [Example 2] First, 'Ethyl acetate (EA) per 100 parts by weight of the propylene-based copolymer adhesive having a molecular weight of about 1,000,000 and one hydroxyl group on the side chain thereof is i 〇〇 It was added and mixed for one hour. Then, 1 part by weight of a phenyl novolac acrylate, which is an energy beam curable propylene-based oligomer, and 4 parts by weight of a urethane-based acrylate is added and stirred for one hour. And 0.8 part by weight of one of melamine-based heat curing agent and 0.4 part by weight of an organic acid-based curing accelerator was added and stirred for another hour. Finally, 0.005 parts by weight of diphenyl (2,4,6-trimercaptobenzylidene) phosphine oxide, which is a photoinitiator, is added and stirred for one hour to obtain an energy beam curable adhesive. Composition. The adhesive composition was coated on a 25 μηι thick polyimine film (SKCKolon, LN100) and dried at 130 ° C for three minutes, after which it was cured with an energy beam. Thereafter, the film having the adhesive composition coated thereon was attached to a 38 μm thick PET release film (Toraysaehan Co., XD5BR)' and received 45. (: An aging treatment for 48 hours yielded an adhesive sheet having an adhesive layer of 1 μm. [Comparative Example 1] First, a molecular weight of about 1,000,000 per 100 parts by weight and at 16 201126617

V . 側鍵上之一經基基團之丙烯系共聚物為100重量份之乙酸 . 乙酯（EA)被添加且攪拌一小時。然後，0.8重量份之一以三 聚氰胺為主之熱固化劑及〇4重量份之一以有機酸為主之 固化加速劑被添加且另外攪拌一小時。黏著組成物塗覆於 一25μπι厚度之聚醯亞胺膜（SKCKolon, LN100)上，且於 130°C乾燥三分鐘。其後，具有塗覆於其上之黏著組成物之 膜附接至一 38μπι厚度之pet離型膜（Toraysaehan Co., XD5BR) ’且接受45°C之老化處理48小時產生具有一 1〇μιη 之黏著層之一黏著片。 [比較例2] 首先’每100重量份之具有約！，〇〇〇,〇〇()之分子量及於其 側鏈上之一經基基團之丙烯系共聚物黏著劑為1〇〇重量份 之乙酸乙酯（ΕΑ)被添加且攪拌一小時。然後，1〇重量份之 笨基紛酿清漆丙烯酸酯，其係一能量束可固化之丙烯系募 聚物，及40重量份之一以胺基甲酸酯為主之丙烯酸酯被添 加且攪拌一小時。其後，5重量份之二苯基(2,4,6_三曱基苯 甲醯基）氧化膦，其係一光起始劑，被添加且授拌一小時以 獲得一能量束可固化之黏著組成物。黏著組成物塗覆於一 25μπι厚度之聚酿亞胺膜(SKCKolon, LN100)上，且於1300C 乾燥二分鐘，其後以能量束固化。其後，具有塗覆於其上 之黏者組成物之膜附接至一 3 8 μηι厚度之pet離型膜 (ToraySaehanCo.，XD5BR)，且接受45〇C之老化處理48小時 產生一具有一 ΙΟμηι之黏著層之黏著片。 [比較例3] 17 201126617 一黏著片係藉由如上實施例1相同程序略過一能量束 固化方法而製造。 [比較例4] 雖然具有一 7〇μηι黏著層之一黏著片係以與如上實施 例1相同之程序製造，但黏著層之表面於130°C之乾燥處理 後破裂，因此，無法產生一黏著片。 [測試例1 :附接性質] 用於製造半導體裝置之黏著片係於安裝一半導體晶片 之方法後，無於一金屬導線架之一側上施用之一輥式或熱 式壓製，使用一突出桿壓製（一種其間未安裝半導體晶片藉 由壓製側邊而附接之技術）測試其是否可附接。 〇：可附接 △:可附接，但具有30%或更高之孔隙 X:不可附接 [測試例2 : 180°剝離強度測量] 2.54cm*15cm(寬度*長度)之黏著片被製備，且將被作為 欲被黏著之物件之銅箔（Mitsui; 3EC-THE-AT)之表面使用 丙酮清洗。然後，個別之黏著片係藉由滾動一約2公斤之橡 膠滾輪且往復移動兩次而沈積於個別銅箔上。其後，樣品 於室溫保持20分鐘，然後，180°剝離強度係以300_/分鐘之 速率對樣品測量。 [測試例3 :殘質存在測試] 如上之測試例1般使黏著片與金屬導線架附接後，一於 金屬導線架上之半導體晶片係於175°C以一密封樹脂密封 18 201126617 三分鐘，且於室溫保持一小時。其後，黏著片被移除以使 用一顯微鏡觀察金屬導線架之黏著片已自其移除之表面， 以測定黏著組份是否留於此表面上。 〇：無殘質 △:每100個封裝物係少於10個封裝物具殘質 X :每1000個封裝物係10個封裝物或更多個具殘質 一：不可被測定 [測試例4 :樹脂漏出測試] 導線架及黏著片之表面於如上之測試例3使用一顯微 鏡觀察計算其上具有漏出密封樹脂之封裝物之數量作為樹 脂漏出之數量。 〇：每1000個封裝物少於1個樹脂漏出 △:每1000個封裝物1至5個樹脂漏出 X:每1000個封裝物多於5個樹脂漏出 不可被測定 [測試例5 :重量降低測試] 黏著劑可自依據實施例1至2及比較例1至3製造之黏著 片獲得，且此等黏著劑之重量降低可於高溫使用熱重量分 析（TGA)測量。測量條件係溫度以10°C/分鐘之速率從室溫 增加至25 0° C。重量降低係相對於測試開始時之重量以百分 率（％)測量。 [測試例6 :耐氧化性測試] 導線架之表面係藉由使依據實施例1至2及比較例1至3 製造之黏著片附接至一普通之銅導線架而遮蔽，且施加 19 201126617 1750C之熱30分鐘。其後，黏著片自其剝離’使用—骷伽 ..、貝微鏡 觀察被遮蔽之表面，以測定表面是否被氧化。特別地，β 使未使用黏著片遮蔽之表面與以黏著片遮蔽之表面比較。 〇：無氧化 X:氧化發生 —:不可被測定 [第1表]V. One of the side groups of the propylene-based copolymer via the group is 100 parts by weight of acetic acid. Ethyl ester (EA) is added and stirred for one hour. Then, 0.8 part by weight of one of melamine-based heat curing agent and 4 parts by weight of an organic acid-based curing accelerator was added and stirred for another hour. The adhesive composition was coated on a 25 μm thick polyimine film (SKCKolon, LN100) and dried at 130 ° C for three minutes. Thereafter, the film having the adhesive composition coated thereon was attached to a 38 μm thick PET release film (Toraysaehan Co., XD5BR)' and subjected to aging treatment at 45 ° C for 48 hours to produce a 1 μm μη One of the adhesive layers adheres to the sheet. [Comparative Example 2] First, there is about every 100 parts by weight! The molecular weight of ruthenium, osmium () and one part by weight of the propylene-based copolymer adhesive on the side chain of the propylene-based copolymer adhesive were added and stirred for one hour. Then, 1 part by weight of the styling varnish acrylate, which is an energy beam curable propylene-based polymer, and 40 parts by weight of a urethane-based acrylate is added and stirred. One hour. Thereafter, 5 parts by weight of diphenyl (2,4,6-tridecyl benzhydryl) phosphine oxide, which is a photoinitiator, is added and mixed for one hour to obtain an energy beam curable. Adhesive composition. The adhesive composition was coated on a 25 μm thick polyaniline film (SKCKolon, LN100) and dried at 1300 C for two minutes, after which it was cured with an energy beam. Thereafter, the film having the adherent composition coated thereon was attached to a PET release film (Toray Saehan Co., XD5BR) having a thickness of 38 μm, and subjected to an aging treatment of 45 ° C for 48 hours to produce one with one.黏μηι The adhesive layer of the adhesive layer. [Comparative Example 3] 17 201126617 An adhesive sheet was produced by skipping an energy beam curing method by the same procedure as in Example 1 above. [Comparative Example 4] Although one of the adhesive sheets having a 7 〇μηι adhesive layer was produced in the same procedure as in Example 1 above, the surface of the adhesive layer was broken after drying at 130 ° C, and therefore, an adhesive bond could not be produced. sheet. [Test Example 1: Attachment Properties] The adhesive sheet for manufacturing a semiconductor device is attached to one side of a metal lead frame by one of the roll or hot press after the method of mounting a semiconductor wafer, using a protrusion Rod pressing (a technique in which a semiconductor wafer is not attached by pressing a side) is tested for its attachability. 〇: attachable Δ: attachable, but having a porosity of 30% or higher X: not attachable [Test Example 2: 180° peel strength measurement] 2.54 cm * 15 cm (width * length) of the adhesive sheet was prepared And the surface of the copper foil (Mitsui; 3EC-THE-AT) which is to be adhered to the object to be adhered is washed with acetone. Then, the individual adhesive sheets are deposited on individual copper foils by rolling a rubber roller of about 2 kg and reciprocating twice. Thereafter, the sample was kept at room temperature for 20 minutes, and then, the 180° peel strength was measured at a rate of 300 Å/min. [Test Example 3: Residual Existence Test] After attaching the adhesive sheet to the metal lead frame as in Test Example 1, the semiconductor wafer on the metal lead frame was sealed at 175 ° C with a sealing resin. 18 201126617 Three minutes And kept at room temperature for one hour. Thereafter, the adhesive sheet was removed to observe the surface from which the adhesive sheet of the metal lead frame had been removed using a microscope to determine whether or not the adhesive component remained on the surface. 〇: no residue △: less than 10 packages per 100 packages with residue X: 10 packages per 1000 package systems or more with one residue: can not be determined [Test Example 4 : Resin Leakage Test] The surface of the lead frame and the adhesive sheet was counted in the above Test Example 3 using a microscope to calculate the amount of the package having the leakage sealing resin as the amount of resin leakage. 〇: less than 1 resin leak out per 1000 packages △: 1 to 5 resin leaks per 1000 packages X: more than 5 resin leaks per 1000 packages can not be measured [Test Example 5: Weight reduction test The adhesive can be obtained from the adhesive sheets manufactured according to Examples 1 to 2 and Comparative Examples 1 to 3, and the weight reduction of these adhesives can be measured at a high temperature using thermogravimetric analysis (TGA). The measurement conditions were such that the temperature was increased from room temperature to 25 0 ° C at a rate of 10 ° C/min. The weight loss is measured as a percentage (%) relative to the weight at the start of the test. [Test Example 6: Oxidation Resistance Test] The surface of the lead frame was shielded by attaching the adhesive sheets manufactured in accordance with Examples 1 to 2 and Comparative Examples 1 to 3 to a common copper lead frame, and applied 19 201126617 The heat of 1750C is 30 minutes. Thereafter, the adhesive sheet was peeled off from the 'use-sag..' and the micromirror to observe the masked surface to determine whether the surface was oxidized. In particular, β compares the surface that is not covered with the adhesive sheet to the surface that is covered with the adhesive sheet. 〇: no oxidation X: oxidation occurs -: cannot be determined [Table 1]

附接性 質 剝離強度 殘質測 試 樹脂漏 出測試 重量降 低測試 ---^ 耐氧化性 測試 實施例1 〇 52 gf/in 〇 〇 1.22% ---— 〇 實施例2 〇 252 gf/in Ο 〇 2.89% ^---- 〇 比較例1 Δ 20 gf/in Δ X 8.21% X 比較例2 X 0.5 gf/in 一 一 3.54% 一 比較例3 Δ 749 gf/in X X 14.90% X 由第1表可見出，此揭露之實施例1及2於當黏著片使用 一突出桿壓製附接而無親式或熱式壓製對其施加而附接時 之附接性質 '殘質、樹脂漏出、重量降低及耐氧化性之測 試顯示極優異性質。 然而，由比較例4可見到，當黏著層厚度係7〇μιη，其 超過Ιμιη〜50μηΐ厚度（其係此揭露之耐熱性黏著片之耐熱 性黏著層之厚度）’黏著片不能被產生。 此揭露已特別參考本案發明人實行之各種實施例中之 其fe例及實％例而詳細朗，但鎌解各種改變及修改可 由熟習此項技藝去於去你抓 a考於未偏離此揭露之精神及範圍而產生。 【圖式簡單說明】 20 201126617 第1圖顯示一種藉由使一黏著片附接至一習知技藝之 金屬導線架之層合方法； 第2圖顯示一種使一半導體晶片安裝於習知技藝之金 屬導線架上之方法； 第3圖顯示一種經由線材使習知技藝之半導體晶片與 金屬導線架之導線連接之方法； 第4圖顯示一種使用一習知技藝之密封樹脂密封半導 體晶片之方法； 第5圖顯示一種於密封完成後移除黏著片之方法； 第6圖顯示一種依據本揭露製備一金屬導線架之方法； 第7圖顯示一種依據本揭露於無黏著片而使一半導體 晶片安裝於金屬導線架上之方法； 第8圖顯示一種依據本揭露於無黏著片而經由線材使 金屬導線架之導線與半導體晶片連接之方法； 第9圖顯示一依據本揭露以一耐熱性黏著片附接及層 合具有安裝於其上之半導體晶片及與其連接之線材之金屬 導線架； 第10圖顯示一種依據本揭露以一密封樹脂密封半導體 晶片之方法，且 第11圖顯示一種依據本揭露於完成密封後移除耐熱性 黏著片之方法。 【主要元件符號說明】 1:对熱性黏著層 3:财熱性黏著片 2:对熱性基材層 4:具一金屬表面之導線架 21 201126617 5:半導體晶片 6:膠 7:線材 8:密封樹脂 22Attachment Properties Peel Strength Residue Test Resin Leakage Test Weight Reduction Test---^ Oxidation Resistance Test Example 1 〇52 gf/in 〇〇1.22% --- 〇Example 2 〇252 gf/in Ο 〇2.89 % ^---- 〇Comparative Example 1 Δ 20 gf/in Δ X 8.21% X Comparative Example 2 X 0.5 gf/in One-to-3.54% One Comparative Example 3 Δ 749 gf/in XX 14.90% X Visible from Table 1 The disclosed Examples 1 and 2 are attached when the adhesive sheet is attached by a protruding rod and attached without the use of a pro- or hot-press to attach the residue, residue, resin leakage, weight reduction, and The oxidation resistance test showed extremely excellent properties. However, as seen from Comparative Example 4, when the thickness of the adhesive layer was 7 μm, which exceeded the thickness of Ιμιη to 50 μηΐ (which is the thickness of the heat-resistant adhesive layer of the heat-resistant adhesive sheet disclosed herein), the adhesive sheet could not be produced. This disclosure has been described in detail with reference to the various examples and actual examples of the various embodiments of the present invention, but it is understood that various changes and modifications may be made by the skilled artisan. The spirit and scope of the creation. BRIEF DESCRIPTION OF THE DRAWINGS 20 201126617 FIG. 1 shows a lamination method for attaching an adhesive sheet to a conventional metal lead frame; FIG. 2 shows a method of mounting a semiconductor wafer to a conventional technique. Method of attaching a metal lead frame; Figure 3 is a view showing a method of connecting a semiconductor wafer of a prior art to a wire of a metal lead frame via a wire; and Figure 4 is a view showing a method of sealing a semiconductor wafer using a sealing resin of the prior art; Figure 5 shows a method of removing the adhesive sheet after the sealing is completed; Figure 6 shows a method for preparing a metal lead frame according to the present disclosure; and Figure 7 shows a semiconductor wafer mounting according to the present disclosure for the non-adhesive sheet. Method for attaching to a metal lead frame; FIG. 8 shows a method for connecting a wire of a metal lead frame to a semiconductor wafer via a wire according to the present disclosure; FIG. 9 shows a heat-resistant adhesive sheet according to the present disclosure. Attaching and laminating a metal lead frame having a semiconductor wafer mounted thereon and a wire connected thereto; FIG. 10 shows a basis Disclosure, shown in FIG. 11 and a sealing method of one kind of resin sealed semiconductor wafer according to the present disclosure a method of removing the heat-resistant adhesive sheet after the completion of sealing. [Main component symbol description] 1: Thermal adhesive layer 3: Thermal adhesive sheet 2: Thermal substrate layer 4: Lead frame with a metal surface 21 201126617 5: Semiconductor wafer 6: Glue 7: Wire 8: Sealing resin twenty two

Claims (1)

201126617 七、申請專利範圍： 1. 一種使用耐熱性黏著片製造半導體裝置之方法，包含如 下之步驟： (a) 製備一金屬導線架； (b) 使一半導體晶片安裝於該金屬導線架上； (c) 經由線材使該金屬導線架之導線與該半導體晶片連 接； (d) 以一耐熱性黏著片附接及層合具有安裝於其上之該 半導體晶片及與其連接之該等線材之該金屬導線架； (e) 以一密封樹脂密封該半導體晶片；及 (f) 於完成該密封後移除該耐熱性黏著片。 2. 如申請專利範圍第1項之方法，其中，該耐熱性黏著片 包含： 一而ί熱性基材；及 一塗覆於該基材之至少一側上之耐熱性黏著層，其具有 一含有一能量束可固化之寡聚物樹脂、一能量束起始 劑、一熱可固化之丙稀系黏著樹脂，及一熱固化劑之組 成物。 3. 如申請專利範圍第2項之方法，其中，該耐熱性基材係 至少一選自聚酯、聚醯亞胺、聚醯胺、聚醚砜、聚苯硫 醚、聚醚酮、聚醚醚酮、三乙醯基纖維素、聚醚醯胺、 聚苯二甲酸乙二酯、聚丙烯，及聚碳酸酯之膜。 4. 如申請專利範圍第2項之方法，其中，進一步地，該耐 熱性黏著層具有1μηι~50μιη之厚度。 23 201126617 5. 如申請專利範圍第2項之方法，其中，該耐熱性黏著層 之一或多種該能量束可固化之寡聚物樹脂係依據設計 目的組合地使用，且被使用之該能量束可固化之寡聚物 樹脂之量係每10 0重量份之該熱可固化之丙烯系黏著樹 脂為0.1至40重量份。 6. 如申請專利範圍第2項之方法，其中，該熱可固化之丙 烯系黏著樹脂具有40,000至3，000,000之重量平均分子 量。 7. 如申請專利範圍第2項之方法，其中，該耐熱性黏著層 之一或多種該能量束起始劑係依據設計目的組合地使 用，且被使用之該能量束起始劑之量係每100重量份之 該能量束可固化之寡聚物樹脂為0.01至20重量份。 8. 如申請專利範圍第2項之方法，其中，當溫度以10°C/分 鐘之速率從室溫增至250°C時，該耐熱性黏著層之重量 降低係少於5 %。 9. 如申請專利範圍第2項之方法，其中，該耐熱性黏著片 保護一金屬表面免於在該耐熱性黏著片附接至該金屬 表面後於250°C之高溫時氧化反應於該金屬表面上發 生。 10.如申請專利範圍第2至9項中任一項之方法，其中，該耐 熱性黏著片係於無對其施加一輥式或熱式壓製而藉由 該耐熱性黏著層之濕潤性附接，且於該耐熱性黏著片附 接至一銅箔且於室溫維持10分鐘後具有1 g f/ i η至5 00 g f/ i η 之黏著強度。 24201126617 VII. Patent Application Range: 1. A method for manufacturing a semiconductor device using a heat-resistant adhesive sheet, comprising the steps of: (a) preparing a metal lead frame; (b) mounting a semiconductor wafer on the metal lead frame; (c) connecting the wires of the metal lead frame to the semiconductor wafer via a wire; (d) attaching and laminating the semiconductor wafer mounted thereon and the wire connected thereto by a heat resistant adhesive sheet a metal lead frame; (e) sealing the semiconductor wafer with a sealing resin; and (f) removing the heat resistant adhesive sheet after the sealing is completed. 2. The method of claim 1, wherein the heat-resistant adhesive sheet comprises: a heat-sensitive substrate; and a heat-resistant adhesive layer coated on at least one side of the substrate, having a heat-resistant adhesive layer An energy beam curable oligomer resin, an energy beam initiator, a heat curable acryl adhesive, and a heat curing agent composition. 3. The method of claim 2, wherein the heat resistant substrate is at least one selected from the group consisting of polyester, polyimine, polyamine, polyethersulfone, polyphenylene sulfide, polyetherketone, poly Membrane of ether ether ketone, triethyl decyl cellulose, polyether decylamine, polyethylene terephthalate, polypropylene, and polycarbonate. 4. The method of claim 2, wherein the heat resistant adhesive layer further has a thickness of from 1 μm to 50 μm. The method of claim 2, wherein the one or more of the heat-resistant adhesive layers are used in combination according to a design purpose, and the energy beam is used. The amount of the curable oligomer resin is from 0.1 to 40 parts by weight per 100 parts by weight of the heat-curable acryl-based adhesive resin. 6. The method of claim 2, wherein the heat curable propylene-based adhesive resin has a weight average molecular weight of 40,000 to 3,000,000. 7. The method of claim 2, wherein the one or more of the heat-resistant adhesive layers are used in combination according to a design purpose, and the amount of the energy beam starter used is The energy beam curable oligomer resin is 0.01 to 20 parts by weight per 100 parts by weight. 8. The method of claim 2, wherein the heat-resistant adhesive layer has a weight reduction of less than 5% when the temperature is increased from room temperature to 250 ° C at a rate of 10 ° C/min. 9. The method of claim 2, wherein the heat-resistant adhesive sheet protects a metal surface from oxidation of the metal at a high temperature of 250 ° C after the heat-resistant adhesive sheet is attached to the metal surface Occurs on the surface. 10. The method according to any one of claims 2 to 9, wherein the heat-resistant adhesive sheet is attached to the heat-resistant adhesive layer by applying a roll or hot pressing thereto Then, the heat-resistant adhesive sheet is attached to a copper foil and has an adhesive strength of 1 gf/i η to 500 degg/i η after being maintained at room temperature for 10 minutes. twenty four
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