MY148605A - Processes and integrated systems for engineering a substrate surface for metal deposition - Google Patents

Processes and integrated systems for engineering a substrate surface for metal deposition

Info

Publication number
MY148605A
MY148605A MYPI20090714A MY148605A MY 148605 A MY148605 A MY 148605A MY PI20090714 A MYPI20090714 A MY PI20090714A MY 148605 A MY148605 A MY 148605A
Authority
MY
Malaysia
Prior art keywords
metal
substrate surface
copper
integrated system
processes
Prior art date
Application number
Other languages
English (en)
Inventor
Thie William
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/514,038 external-priority patent/US8241701B2/en
Priority claimed from US11/513,634 external-priority patent/US8771804B2/en
Priority claimed from US11/513,446 external-priority patent/US8747960B2/en
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of MY148605A publication Critical patent/MY148605A/en

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
MYPI20090714 2006-08-30 2007-08-17 Processes and integrated systems for engineering a substrate surface for metal deposition MY148605A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/514,038 US8241701B2 (en) 2005-08-31 2006-08-30 Processes and systems for engineering a barrier surface for copper deposition
US11/513,634 US8771804B2 (en) 2005-08-31 2006-08-30 Processes and systems for engineering a copper surface for selective metal deposition
US11/513,446 US8747960B2 (en) 2005-08-31 2006-08-30 Processes and systems for engineering a silicon-type surface for selective metal deposition to form a metal silicide

Publications (1)

Publication Number Publication Date
MY148605A true MY148605A (en) 2013-05-15

Family

ID=41202298

Family Applications (2)

Application Number Title Priority Date Filing Date
MYPI2012004997A MY171542A (en) 2006-08-30 2007-08-17 Processes and integrated systems for engineering a substrate surface for metal deposition
MYPI20090714 MY148605A (en) 2006-08-30 2007-08-17 Processes and integrated systems for engineering a substrate surface for metal deposition

Family Applications Before (1)

Application Number Title Priority Date Filing Date
MYPI2012004997A MY171542A (en) 2006-08-30 2007-08-17 Processes and integrated systems for engineering a substrate surface for metal deposition

Country Status (5)

Country Link
JP (2) JP5489717B2 (OSRAM)
CN (2) CN101558186B (OSRAM)
MY (2) MY171542A (OSRAM)
SG (1) SG174752A1 (OSRAM)
TW (1) TWI393186B (OSRAM)

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US20090269507A1 (en) * 2008-04-29 2009-10-29 Sang-Ho Yu Selective cobalt deposition on copper surfaces
US12444651B2 (en) 2009-08-04 2025-10-14 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
US8227344B2 (en) * 2010-02-26 2012-07-24 Tokyo Electron Limited Hybrid in-situ dry cleaning of oxidized surface layers
KR20130092570A (ko) * 2010-08-31 2013-08-20 도쿄엘렉트론가부시키가이샤 반도체 장치의 제조 방법
JP5560144B2 (ja) * 2010-08-31 2014-07-23 東京エレクトロン株式会社 半導体装置の製造方法
JP2012054306A (ja) * 2010-08-31 2012-03-15 Tokyo Electron Ltd 半導体装置の製造方法
CN102468265A (zh) * 2010-11-01 2012-05-23 中芯国际集成电路制造(上海)有限公司 连接插塞及其制作方法
US11437269B2 (en) 2012-03-27 2022-09-06 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
US8603913B1 (en) * 2012-12-20 2013-12-10 Lam Research Corporation Porous dielectrics K value restoration by thermal treatment and or solvent treatment
US9040385B2 (en) * 2013-07-24 2015-05-26 Taiwan Semiconductor Manufacturing Co., Ltd. Mechanisms for cleaning substrate surface for hybrid bonding
KR20160074568A (ko) * 2013-10-22 2016-06-28 토소우 에스엠디, 인크 최적화된 구조화 표면 및 최적화 방법
WO2015195080A1 (en) * 2014-06-16 2015-12-23 Intel Corporation Selective diffusion barrier between metals of an integrated circuit device
US9997405B2 (en) * 2014-09-30 2018-06-12 Lam Research Corporation Feature fill with nucleation inhibition
US9768060B2 (en) * 2014-10-29 2017-09-19 Applied Materials, Inc. Systems and methods for electrochemical deposition on a workpiece including removing contamination from seed layer surface prior to ECD
WO2018063815A1 (en) * 2016-10-02 2018-04-05 Applied Materials, Inc. Doped selective metal caps to improve copper electromigration with ruthenium liner
JP6842159B2 (ja) * 2016-12-13 2021-03-17 サムコ株式会社 プラズマ処理方法
US10438846B2 (en) 2017-11-28 2019-10-08 Taiwan Semiconductor Manufacturing Co., Ltd. Physical vapor deposition process for semiconductor interconnection structures
JP2019192892A (ja) 2018-04-18 2019-10-31 東京エレクトロン株式会社 処理システムおよび処理方法
KR102828798B1 (ko) 2018-12-05 2025-07-02 램 리써치 코포레이션 보이드 프리 (void free) 저응력 (low stress) 충진
KR102301933B1 (ko) * 2018-12-26 2021-09-15 한양대학교 에리카산학협력단 반도체 소자의 제조 방법
SG11202108725XA (en) 2019-02-13 2021-09-29 Lam Res Corp Tungsten feature fill with inhibition control
KR102890128B1 (ko) 2019-09-25 2025-11-25 도쿄엘렉트론가부시키가이샤 기판 액 처리 방법 및 기판 액 처리 장치
US11555250B2 (en) * 2020-04-29 2023-01-17 Applied Materials, Inc. Organic contamination free surface machining
CN115867695A (zh) * 2020-05-08 2023-03-28 朗姆研究公司 电镀钴、镍及其合金
US20220375751A1 (en) * 2021-05-24 2022-11-24 Applied Materials, Inc. Integrated epitaxy and preclean system
CN115394911B (zh) * 2022-06-06 2025-10-03 昕原半导体(杭州)有限公司 阻变式存储器的下电极及制备方法
CN120376473B (zh) * 2025-06-26 2025-09-23 昆山科比精工设备有限公司 一种硅片镀铜前处理用转运装置

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US6144099A (en) * 1999-03-30 2000-11-07 Advanced Micro Devices, Inc. Semiconductor metalization barrier
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JP2003142579A (ja) * 2001-11-07 2003-05-16 Hitachi Ltd 半導体装置の製造方法および半導体装置
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Also Published As

Publication number Publication date
MY171542A (en) 2019-10-17
CN103107120A (zh) 2013-05-15
TWI393186B (zh) 2013-04-11
CN101558186A (zh) 2009-10-14
CN101558186B (zh) 2015-01-14
JP2010503205A (ja) 2010-01-28
JP5820870B2 (ja) 2015-11-24
SG174752A1 (en) 2011-10-28
TW200832556A (en) 2008-08-01
CN103107120B (zh) 2016-06-08
JP2014099627A (ja) 2014-05-29
JP5489717B2 (ja) 2014-05-14

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