MY134021A - Alkali metal-containing polishing system and method - Google Patents

Alkali metal-containing polishing system and method

Info

Publication number
MY134021A
MY134021A MYPI20020128A MYPI20020128A MY134021A MY 134021 A MY134021 A MY 134021A MY PI20020128 A MYPI20020128 A MY PI20020128A MY PI20020128 A MYPI20020128 A MY PI20020128A MY 134021 A MY134021 A MY 134021A
Authority
MY
Malaysia
Prior art keywords
polishing
alkali metal
substrate
polar moiety
polar
Prior art date
Application number
MYPI20020128A
Other languages
English (en)
Inventor
H Bogush Gregory
p chamberlain Jeffrey
L Mueller Brian
j schroeder David
Carter Phillip
M De Rege Francesco
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of MY134021A publication Critical patent/MY134021A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1472—Non-aqueous liquid suspensions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
MYPI20020128A 2001-01-16 2002-01-15 Alkali metal-containing polishing system and method MY134021A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US26192601P 2001-01-16 2001-01-16

Publications (1)

Publication Number Publication Date
MY134021A true MY134021A (en) 2007-11-30

Family

ID=22995481

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI20020128A MY134021A (en) 2001-01-16 2002-01-15 Alkali metal-containing polishing system and method

Country Status (7)

Country Link
US (1) US6612911B2 (enExample)
EP (1) EP1358289A2 (enExample)
JP (1) JP2004529488A (enExample)
CN (1) CN1610730A (enExample)
AU (1) AU2002248463A1 (enExample)
MY (1) MY134021A (enExample)
WO (1) WO2002061008A2 (enExample)

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US20040134873A1 (en) * 1996-07-25 2004-07-15 Li Yao Abrasive-free chemical mechanical polishing composition and polishing process containing same
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US7004819B2 (en) * 2002-01-18 2006-02-28 Cabot Microelectronics Corporation CMP systems and methods utilizing amine-containing polymers
TWI256971B (en) * 2002-08-09 2006-06-21 Hitachi Chemical Co Ltd CMP abrasive and method for polishing substrate
DE60330578D1 (de) * 2002-09-25 2010-01-28 Asahi Glass Co Ltd Poliermittelzusammensetzung und Polierverfahren
US20100009540A1 (en) * 2002-09-25 2010-01-14 Asahi Glass Company Limited Polishing compound, its production process and polishing method
JP2004266155A (ja) * 2003-03-03 2004-09-24 Jsr Corp 化学機械研磨用水系分散体およびこれを用いた化学機械研磨方法ならびに半導体装置の製造方法
AU2003277621A1 (en) * 2002-11-08 2004-06-07 Fujimi Incorporated Polishing composition and rinsing composition
US6803353B2 (en) 2002-11-12 2004-10-12 Atofina Chemicals, Inc. Copper chemical mechanical polishing solutions using sulfonated amphiprotic agents
US7300601B2 (en) * 2002-12-10 2007-11-27 Advanced Technology Materials, Inc. Passivative chemical mechanical polishing composition for copper film planarization
US7736405B2 (en) * 2003-05-12 2010-06-15 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for copper and associated materials and method of using same
US7504044B2 (en) * 2004-11-05 2009-03-17 Cabot Microelectronics Corporation Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
US8062096B2 (en) * 2005-06-30 2011-11-22 Cabot Microelectronics Corporation Use of CMP for aluminum mirror and solar cell fabrication
US8251777B2 (en) * 2005-06-30 2012-08-28 Cabot Microelectronics Corporation Polishing slurry for aluminum and aluminum alloys
WO2007038399A2 (en) * 2005-09-26 2007-04-05 Cabot Microelectronics Corporation Metal cations for initiating chemical mechanical polishing
KR100827594B1 (ko) * 2006-11-07 2008-05-07 제일모직주식회사 다결정 실리콘 연마용 ｃｍｐ 슬러리 조성물 및 이의 제조방법
KR100643628B1 (ko) * 2005-11-04 2006-11-10 제일모직주식회사 다결정 실리콘 연마용 ｃｍｐ 슬러리 조성물 및 이의 제조방법
WO2007103578A1 (en) * 2006-03-09 2007-09-13 Cabot Microelectronics Corporation Method of polishing a tungsten carbide surface
JP5204960B2 (ja) * 2006-08-24 2013-06-05 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨方法
US7678700B2 (en) * 2006-09-05 2010-03-16 Cabot Microelectronics Corporation Silicon carbide polishing method utilizing water-soluble oxidizers
US7998866B2 (en) * 2006-09-05 2011-08-16 Cabot Microelectronics Corporation Silicon carbide polishing method utilizing water-soluble oxidizers
WO2008039730A1 (en) * 2006-09-25 2008-04-03 Advanced Technology Materials, Inc. Compositions and methods for the removal of photoresist for a wafer rework application
US20100087065A1 (en) * 2007-01-31 2010-04-08 Advanced Technology Materials, Inc. Stabilization of polymer-silica dispersions for chemical mechanical polishing slurry applications
DE102008059044B4 (de) * 2008-11-26 2013-08-22 Siltronic Ag Verfahren zum Polieren einer Halbleiterscheibe mit einer verspannt-relaxierten Si1-xGex-Schicht
SG192220A1 (en) * 2011-02-03 2013-09-30 Nitta Haas Inc Polishing composition and polishing method using the same
US9157012B2 (en) * 2011-12-21 2015-10-13 Basf Se Process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of borophosphosilicate glass (BPSG) material in the presence of a CMP composition comprising anionic phosphate or phosphonate
WO2013137192A1 (ja) * 2012-03-16 2013-09-19 株式会社フジミインコーポレーテッド 研磨用組成物
CN104109483B (zh) * 2013-04-17 2016-11-09 江阴江化微电子材料股份有限公司 一种太阳能电池片抛光液及其制备方法
US11026765B2 (en) 2013-07-10 2021-06-08 H2O Tech, Inc. Stabilized, water-jet slurry apparatus and method
WO2016111718A1 (en) 2015-01-05 2016-07-14 Rhodia Operations Amine-imino dialcohol neutralizing agents for low volatile compound aqueous organic coating compositions and methods for using same
CN107953152A (zh) * 2017-12-19 2018-04-24 北京创昱科技有限公司 一种GaAs晶片的精密抛光方法
US20210348027A1 (en) * 2020-05-06 2021-11-11 Taiwan Semiconductor Manufacturing Company Ltd. Magnetic polishing slurry and method for polishing a workpiece
JP7628363B2 (ja) * 2020-07-02 2025-02-10 株式会社ディスコ 研磨液

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US5407526A (en) 1993-06-30 1995-04-18 Intel Corporation Chemical mechanical polishing slurry delivery and mixing system
US5860848A (en) 1995-06-01 1999-01-19 Rodel, Inc. Polishing silicon wafers with improved polishing slurries
US5904159A (en) 1995-11-10 1999-05-18 Tokuyama Corporation Polishing slurries and a process for the production thereof
US5769689A (en) * 1996-02-28 1998-06-23 Rodel, Inc. Compositions and methods for polishing silica, silicates, and silicon nitride
MY133700A (en) 1996-05-15 2007-11-30 Kobe Steel Ltd Polishing fluid composition and polishing method
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US5938505A (en) * 1997-01-10 1999-08-17 Texas Instruments Incorporated High selectivity oxide to nitride slurry
US5993685A (en) * 1997-04-02 1999-11-30 Advanced Technology Materials Planarization composition for removing metal films
US6322600B1 (en) * 1997-04-23 2001-11-27 Advanced Technology Materials, Inc. Planarization compositions and methods for removing interlayer dielectric films
JPH10309660A (ja) * 1997-05-07 1998-11-24 Tokuyama Corp 仕上げ研磨剤
WO1999062628A1 (en) 1998-06-04 1999-12-09 Angus Chemical Company Stabilization of silica dispersions
US6533832B2 (en) 1998-06-26 2003-03-18 Cabot Microelectronics Corporation Chemical mechanical polishing slurry and method for using same
WO2000036037A1 (en) 1998-12-17 2000-06-22 Rodel Holdings, Inc. Compositions and methods for polishing semiconductor wafers
CN1422314A (zh) 2000-04-11 2003-06-04 卡伯特微电子公司 用于优先除去氧化硅的系统

Also Published As

Publication number Publication date
AU2002248463A1 (en) 2002-08-12
JP2004529488A (ja) 2004-09-24
WO2002061008A2 (en) 2002-08-08
US6612911B2 (en) 2003-09-02
US20030082998A1 (en) 2003-05-01
WO2002061008A3 (en) 2002-09-19
EP1358289A2 (en) 2003-11-05
CN1610730A (zh) 2005-04-27

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