MX9600508A - Metodo para producir una pelicula del semiconductor compuesto del grupo ii - vi, adulterado con nitrogeno. - Google Patents

Metodo para producir una pelicula del semiconductor compuesto del grupo ii - vi, adulterado con nitrogeno.

Info

Publication number
MX9600508A
MX9600508A MX9600508A MX9600508A MX9600508A MX 9600508 A MX9600508 A MX 9600508A MX 9600508 A MX9600508 A MX 9600508A MX 9600508 A MX9600508 A MX 9600508A MX 9600508 A MX9600508 A MX 9600508A
Authority
MX
Mexico
Prior art keywords
compound semiconductor
semiconductor film
group
doped group
forming nitrogen
Prior art date
Application number
MX9600508A
Other languages
English (en)
Inventor
Satoshi Ito
Masao Ikeda
Hiroyuki Okuyama
Hironori Tsukamoto
Masaharu Nagai
Koshi Tamamura
Satoshi Taniguchi
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of MX9600508A publication Critical patent/MX9600508A/es

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/28—Materials of the light emitting region containing only elements of Group II and Group VI of the Periodic Table
    • H01L33/285—Materials of the light emitting region containing only elements of Group II and Group VI of the Periodic Table characterised by the doping materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0026—Activation or excitation of reactive gases outside the coating chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0623—Sulfides, selenides or tellurides
    • C23C14/0629—Sulfides, selenides or tellurides of zinc, cadmium or mercury
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02463—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02469—Group 12/16 materials
    • H01L21/02474—Sulfides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02469—Group 12/16 materials
    • H01L21/02477—Selenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/0256—Selenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0083—Processes for devices with an active region comprising only II-VI compounds
    • H01L33/0087—Processes for devices with an active region comprising only II-VI compounds with a substrate not being a II-VI compound

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

Una película de un semiconductor compuesto del grupo II - VI de por lo menos uno de los elementos que pertenecen al grupo II de la tabla periodica, y por lo menos uno de los elementos que pertenecen al grupo VI de la tabla periodica se deposita sobre un substrato. Cuando la película se deposita sobre el substrato, se aplica un plasma de nitrogeno en estado excitado al substrato mientras que se remueven las partículas cargadas del plasma mediante un medio de remocion de partícula cargada. La película depositada del semiconductor compuesto del grupo II - VI adulterado con nitrogeno tiene un porcentaje aumentado de átomos de nitrogeno activados y cristalinidad mejorada.
MX9600508A 1994-06-09 1995-04-28 Metodo para producir una pelicula del semiconductor compuesto del grupo ii - vi, adulterado con nitrogeno. MX9600508A (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP12763494 1994-06-09
PCT/JP1995/000854 WO1995034093A1 (fr) 1994-06-09 1995-04-28 Procede de formation d'un film semi-conducteur fait d'un compose des groupes ii et vi dope a l'azote

Publications (1)

Publication Number Publication Date
MX9600508A true MX9600508A (es) 1997-04-30

Family

ID=14964952

Family Applications (1)

Application Number Title Priority Date Filing Date
MX9600508A MX9600508A (es) 1994-06-09 1995-04-28 Metodo para producir una pelicula del semiconductor compuesto del grupo ii - vi, adulterado con nitrogeno.

Country Status (6)

Country Link
US (1) US5865897A (es)
EP (1) EP0714122A4 (es)
KR (1) KR960704343A (es)
BR (1) BR9506254A (es)
MX (1) MX9600508A (es)
WO (1) WO1995034093A1 (es)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100648759B1 (ko) * 1998-09-10 2006-11-23 로무 가부시키가이샤 반도체발광소자 및 그 제조방법
US6759312B2 (en) * 2001-10-16 2004-07-06 The Regents Of The University Of California Co-implantation of group VI elements and N for formation of non-alloyed ohmic contacts for n-type semiconductors
JP5072184B2 (ja) * 2002-12-12 2012-11-14 株式会社半導体エネルギー研究所 成膜方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55148418A (en) * 1979-05-09 1980-11-19 Nippon Telegr & Teleph Corp <Ntt> Formation of molecular beam epitaxial growth layer on semicondcutor substrate
JPS5750502A (en) * 1980-09-11 1982-03-25 Matsushita Electric Ind Co Ltd Liquid evaporating element
US4483725A (en) * 1982-09-30 1984-11-20 At&T Bell Laboratories Reactive vapor deposition of multiconstituent material
JPS6132414A (ja) * 1984-07-24 1986-02-15 Mitsubishi Electric Corp 薄膜形成装置
US4800100A (en) * 1987-10-27 1989-01-24 Massachusetts Institute Of Technology Combined ion and molecular beam apparatus and method for depositing materials
US5248631A (en) * 1990-08-24 1993-09-28 Minnesota Mining And Manufacturing Company Doping of iib-via semiconductors during molecular beam epitaxy using neutral free radicals
JPH05234892A (ja) * 1991-12-27 1993-09-10 Victor Co Of Japan Ltd 結晶成長方法及び結晶成長用ラジカル発生装置
JPH05243283A (ja) * 1992-02-28 1993-09-21 Sony Corp エピタキシャル成長装置及び成長方法
US5772759A (en) * 1992-09-28 1998-06-30 Aixtron Gmbh Process for producing p-type doped layers, in particular, in II-VI semiconductors
CN1099188A (zh) * 1993-04-01 1995-02-22 松下电器产业株式会社 激励原子束源
JPH06314652A (ja) * 1993-04-28 1994-11-08 Victor Co Of Japan Ltd 結晶成長方法及びその装置
JPH0714765A (ja) * 1993-06-28 1995-01-17 Nissin Electric Co Ltd ラジカルセルと分子線エピタキシ−装置
JPH0722343A (ja) * 1993-07-01 1995-01-24 Nissin Electric Co Ltd 気相成長装置
JPH0778839A (ja) * 1993-07-12 1995-03-20 Sumitomo Electric Ind Ltd 半導体エピタキシャル成長装置および成長方法
US5398641A (en) * 1993-07-27 1995-03-21 Texas Instruments Incorporated Method for p-type doping of semiconductor structures formed of group II and group VI elements

Also Published As

Publication number Publication date
BR9506254A (pt) 1996-04-16
WO1995034093A1 (fr) 1995-12-14
EP0714122A4 (en) 1997-05-28
EP0714122A1 (en) 1996-05-29
US5865897A (en) 1999-02-02
KR960704343A (ko) 1996-08-31

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