MX9302575A - Aplicacion de compuestos elementales organicos para la separacion de elementos sobre substratos. - Google Patents
Aplicacion de compuestos elementales organicos para la separacion de elementos sobre substratos.Info
- Publication number
- MX9302575A MX9302575A MX9302575A MX9302575A MX9302575A MX 9302575 A MX9302575 A MX 9302575A MX 9302575 A MX9302575 A MX 9302575A MX 9302575 A MX9302575 A MX 9302575A MX 9302575 A MX9302575 A MX 9302575A
- Authority
- MX
- Mexico
- Prior art keywords
- substrates
- elements
- separation
- application
- elemental compounds
- Prior art date
Links
- 150000001875 compounds Chemical class 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 title abstract 2
- 238000000926 separation method Methods 0.000 title 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 1
- 238000007068 beta-elimination reaction Methods 0.000 abstract 1
- 238000011065 in-situ storage Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 150000002894 organic compounds Chemical class 0.000 abstract 1
- 238000005191 phase separation Methods 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- Treating Waste Gases (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19924214224 DE4214224A1 (de) | 1992-04-30 | 1992-04-30 | Verwendung von elementorganischen verbindungen zur abscheidung des elementes auf substraten |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| MX9302575A true MX9302575A (es) | 1994-08-31 |
Family
ID=6457824
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MX9302575A MX9302575A (es) | 1992-04-30 | 1993-04-30 | Aplicacion de compuestos elementales organicos para la separacion de elementos sobre substratos. |
Country Status (3)
| Country | Link |
|---|---|
| DE (1) | DE4214224A1 (enExample) |
| MX (1) | MX9302575A (enExample) |
| WO (1) | WO1993022473A1 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19846774A1 (de) * | 1998-10-10 | 2000-04-20 | Cognis Deutschland Gmbh | Additive für die Verarbeitung von Kunststoffen |
| KR100852361B1 (ko) * | 2001-04-06 | 2008-08-14 | 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨 | 트리알킬 ｖａ족 금속 화합물 |
| EP2492273A1 (en) * | 2011-02-23 | 2012-08-29 | L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Deposition of gallium containing thin films using gallium alkylamide precursor |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4720560A (en) * | 1984-10-25 | 1988-01-19 | Morton Thiokol, Inc. | Hybrid organometallic compounds, particularly for metal organic chemical vapor deposition |
| JPH0645886B2 (ja) * | 1985-12-16 | 1994-06-15 | キヤノン株式会社 | 堆積膜形成法 |
| DE4017966C2 (de) * | 1990-06-05 | 1996-05-30 | Ppm Pure Metals Gmbh | Verwendung elementorganischer Verbindungen zur Abscheidung aus der Gasphase |
-
1992
- 1992-04-30 DE DE19924214224 patent/DE4214224A1/de active Granted
-
1993
- 1993-04-23 WO PCT/EP1993/000986 patent/WO1993022473A1/de not_active Ceased
- 1993-04-30 MX MX9302575A patent/MX9302575A/es unknown
Also Published As
| Publication number | Publication date |
|---|---|
| WO1993022473A1 (de) | 1993-11-11 |
| DE4214224C2 (enExample) | 1994-03-17 |
| DE4214224A1 (de) | 1993-11-04 |
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