MX9302575A - APPLICATION OF ORGANIC ELEMENTAL COMPOUNDS FOR THE SEPARATION OF ELEMENTS ON SUBSTRATES. - Google Patents

APPLICATION OF ORGANIC ELEMENTAL COMPOUNDS FOR THE SEPARATION OF ELEMENTS ON SUBSTRATES.

Info

Publication number
MX9302575A
MX9302575A MX9302575A MX9302575A MX9302575A MX 9302575 A MX9302575 A MX 9302575A MX 9302575 A MX9302575 A MX 9302575A MX 9302575 A MX9302575 A MX 9302575A MX 9302575 A MX9302575 A MX 9302575A
Authority
MX
Mexico
Prior art keywords
substrates
elements
separation
application
elemental compounds
Prior art date
Application number
MX9302575A
Other languages
Spanish (es)
Inventor
Harald Donath
Peter Gimmnich
Ernst Goebel
Joerg Lorberth
Klaus Rademann
Wolfgang Stolz
Christel Thalmann
Gunnar Zimmermann
Arnd Greiling
Original Assignee
Sgs Mochem Products Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Mochem Products Gmbh filed Critical Sgs Mochem Products Gmbh
Publication of MX9302575A publication Critical patent/MX9302575A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Treating Waste Gases (AREA)

Abstract

La invención se refiere al empleo de compuestos orgánicos de los elementos fósforo ó arsénico para una separación por fases gaseosas ó vacío y también a un procedimiento para la elaboración de capas sobre substratos en que se utilizan estos compuestos elementales orgánicos que se descomponen in-situ bajo eliminación beta.The invention relates to the use of organic compounds of the elements phosphorus or arsenic for gas phase separation or vacuum and also to a process for the preparation of layers on substrates in which these organic elemental compounds are used, which decompose in-situ under beta elimination.

MX9302575A 1992-04-30 1993-04-30 APPLICATION OF ORGANIC ELEMENTAL COMPOUNDS FOR THE SEPARATION OF ELEMENTS ON SUBSTRATES. MX9302575A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19924214224 DE4214224A1 (en) 1992-04-30 1992-04-30 USE OF ELEMENT ORGANIC COMPOUNDS FOR DEPOSITING THE ELEMENT ON SUBSTRATES

Publications (1)

Publication Number Publication Date
MX9302575A true MX9302575A (en) 1994-08-31

Family

ID=6457824

Family Applications (1)

Application Number Title Priority Date Filing Date
MX9302575A MX9302575A (en) 1992-04-30 1993-04-30 APPLICATION OF ORGANIC ELEMENTAL COMPOUNDS FOR THE SEPARATION OF ELEMENTS ON SUBSTRATES.

Country Status (3)

Country Link
DE (1) DE4214224A1 (en)
MX (1) MX9302575A (en)
WO (1) WO1993022473A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19846774A1 (en) * 1998-10-10 2000-04-20 Cognis Deutschland Gmbh Polymer processing additive comprises a granulate in the form of bead or cylindrical particles having a specified length/diameter ratio
KR100852361B1 (en) * 2001-04-06 2008-08-14 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨 Trialkyl group VA metal compounds
EP2492273A1 (en) * 2011-02-23 2012-08-29 L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Deposition of gallium containing thin films using gallium alkylamide precursor

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4720560A (en) * 1984-10-25 1988-01-19 Morton Thiokol, Inc. Hybrid organometallic compounds, particularly for metal organic chemical vapor deposition
JPH0645886B2 (en) * 1985-12-16 1994-06-15 キヤノン株式会社 Deposited film formation method
DE4017966C2 (en) * 1990-06-05 1996-05-30 Ppm Pure Metals Gmbh Use of organic compounds for the separation from the gas phase

Also Published As

Publication number Publication date
WO1993022473A1 (en) 1993-11-11
DE4214224C2 (en) 1994-03-17
DE4214224A1 (en) 1993-11-04

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