MX388689B - Sensores de efecto de campo. - Google Patents

Sensores de efecto de campo.

Info

Publication number
MX388689B
MX388689B MX2019014905A MX2019014905A MX388689B MX 388689 B MX388689 B MX 388689B MX 2019014905 A MX2019014905 A MX 2019014905A MX 2019014905 A MX2019014905 A MX 2019014905A MX 388689 B MX388689 B MX 388689B
Authority
MX
Mexico
Prior art keywords
nanostructure
active moiety
channel
field effect
effect sensors
Prior art date
Application number
MX2019014905A
Other languages
English (en)
Other versions
MX2019014905A (es
Inventor
Boyan Boyanov
Original Assignee
Illumina Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Illumina Inc filed Critical Illumina Inc
Publication of MX2019014905A publication Critical patent/MX2019014905A/es
Publication of MX388689B publication Critical patent/MX388689B/es

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • C—CHEMISTRY; METALLURGY
    • C12—BIOCHEMISTRY; BEER; SPIRITS; WINE; VINEGAR; MICROBIOLOGY; ENZYMOLOGY; MUTATION OR GENETIC ENGINEERING
    • C12Q—MEASURING OR TESTING PROCESSES INVOLVING ENZYMES, NUCLEIC ACIDS OR MICROORGANISMS; COMPOSITIONS OR TEST PAPERS THEREFOR; PROCESSES OF PREPARING SUCH COMPOSITIONS; CONDITION-RESPONSIVE CONTROL IN MICROBIOLOGICAL OR ENZYMOLOGICAL PROCESSES
    • C12Q1/00—Measuring or testing processes involving enzymes, nucleic acids or microorganisms; Compositions therefor; Processes of preparing such compositions
    • C12Q1/68—Measuring or testing processes involving enzymes, nucleic acids or microorganisms; Compositions therefor; Processes of preparing such compositions involving nucleic acids
    • C12Q1/6869—Methods for sequencing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4145—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for biomolecules, e.g. gate electrode with immobilised receptors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4146—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS involving nanosized elements, e.g. nanotubes, nanowires
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4148—Integrated circuits therefor, e.g. fabricated by CMOS processing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/48—Biological material, e.g. blood, urine; Haemocytometers
    • G01N33/50—Chemical analysis of biological material, e.g. blood, urine; Testing involving biospecific ligand binding methods; Immunological testing
    • G01N33/53—Immunoassay; Biospecific binding assay; Materials therefor
    • G01N33/543—Immunoassay; Biospecific binding assay; Materials therefor with an insoluble carrier for immobilising immunochemicals
    • G01N33/54313—Immunoassay; Biospecific binding assay; Materials therefor with an insoluble carrier for immobilising immunochemicals the carrier being characterised by its particulate form
    • G01N33/54346—Nanoparticles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/43—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 1D charge carrier gas channels, e.g. quantum wire FETs or transistors having 1D quantum-confined channels
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/0092—Arrangements for measuring currents or voltages or for indicating presence or sign thereof measuring current only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/027—Generators characterised by the type of circuit or by the means used for producing pulses by the use of logic circuits, with internal or external positive feedback
    • H03K3/03—Astable circuits
    • H03K3/0315—Ring oscillators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/123—Nanowire, nanosheet or nanotube semiconductor bodies comprising junctions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Molecular Biology (AREA)
  • Immunology (AREA)
  • General Health & Medical Sciences (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Biochemistry (AREA)
  • Analytical Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Pathology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Organic Chemistry (AREA)
  • Proteomics, Peptides & Aminoacids (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Wood Science & Technology (AREA)
  • Zoology (AREA)
  • Biotechnology (AREA)
  • Microbiology (AREA)
  • Computer Hardware Design (AREA)
  • Biophysics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Genetics & Genomics (AREA)
  • Bioinformatics & Cheminformatics (AREA)
  • General Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Biomedical Technology (AREA)
  • Hematology (AREA)
  • Urology & Nephrology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Cell Biology (AREA)
  • Medicinal Chemistry (AREA)
  • Food Science & Technology (AREA)

Abstract

Se describen aparatos y métodos para sensores de efecto de campo de molécula individual que tienen canales conductores funcionalizados con una porción activa individual. Una región de una nanoestructura (por ejemplo, tal como un nanocable de silicio o un nanotubo de carbono) proporciona el canal conductor. La densidad de estado de trampa de la nanoestructura se modifica para una parte de la nanoestructura en proximidad con una ubicación donde la porción se activa se enlaa a la nanoestructura. En un ejemplo, el dispositivo semiconductor incluye una fuente, un drenador, un canal que incluye una nanoestructura que tiene una porción modificada con una densidad de estado de trampa incrementada, la porción modificada que se funcionaliza adicionalmente con una porción activa. Una terminal de compuerta esta en comunicación eléctrica con la nanoestructura. A medida que se aplica una señal eléctrica variable a una solución iónica en contacto con el canal nanoestructural, los cambios en la corriente observada del dispositivo semiconductor pueden usarse para identificar la composición del analito.
MX2019014905A 2017-08-01 2018-06-29 Sensores de efecto de campo. MX388689B (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201762539813P 2017-08-01 2017-08-01
PCT/US2018/040439 WO2019027604A1 (en) 2017-08-01 2018-06-29 FIELD EFFECT SENSORS

Publications (2)

Publication Number Publication Date
MX2019014905A MX2019014905A (es) 2021-12-13
MX388689B true MX388689B (es) 2025-03-20

Family

ID=65229384

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2019014905A MX388689B (es) 2017-08-01 2018-06-29 Sensores de efecto de campo.

Country Status (17)

Country Link
US (1) US10551342B2 (es)
EP (1) EP3646018B1 (es)
JP (1) JP6833079B2 (es)
KR (1) KR102213538B1 (es)
CN (1) CN111051871B (es)
AU (2) AU2018310436A1 (es)
BR (1) BR112019028104B1 (es)
CA (1) CA3067245C (es)
IL (1) IL271295B (es)
MX (1) MX388689B (es)
PH (1) PH12019502908A1 (es)
RU (1) RU2740358C1 (es)
SA (1) SA519410908B1 (es)
SG (1) SG11201912263VA (es)
TW (1) TWI709241B (es)
WO (1) WO2019027604A1 (es)
ZA (1) ZA201908275B (es)

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Also Published As

Publication number Publication date
AU2021203805A1 (en) 2021-07-08
CA3067245C (en) 2020-10-20
EP3646018A1 (en) 2020-05-06
BR112019028104B1 (pt) 2021-10-26
TW201911577A (zh) 2019-03-16
BR112019028104A2 (pt) 2020-07-28
KR102213538B1 (ko) 2021-02-08
JP2020528542A (ja) 2020-09-24
WO2019027604A1 (en) 2019-02-07
AU2018310436A1 (en) 2020-01-16
MX2019014905A (es) 2021-12-13
IL271295B (en) 2021-09-30
US20190041354A1 (en) 2019-02-07
RU2740358C1 (ru) 2021-01-13
CN111051871A (zh) 2020-04-21
SG11201912263VA (en) 2020-01-30
AU2021203805B2 (en) 2023-05-25
ZA201908275B (en) 2021-04-28
TWI709241B (zh) 2020-11-01
EP3646018A4 (en) 2020-11-18
CN111051871B (zh) 2022-05-10
SA519410908B1 (ar) 2022-08-09
EP3646018B1 (en) 2023-08-09
PH12019502908A1 (en) 2020-09-14
CA3067245A1 (en) 2019-02-07
KR20200017425A (ko) 2020-02-18
JP6833079B2 (ja) 2021-02-24
IL271295A (en) 2020-01-30
US10551342B2 (en) 2020-02-04

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