MX2019011827A - Disposicion de amplificador de potencia de banda ancha. - Google Patents

Disposicion de amplificador de potencia de banda ancha.

Info

Publication number
MX2019011827A
MX2019011827A MX2019011827A MX2019011827A MX2019011827A MX 2019011827 A MX2019011827 A MX 2019011827A MX 2019011827 A MX2019011827 A MX 2019011827A MX 2019011827 A MX2019011827 A MX 2019011827A MX 2019011827 A MX2019011827 A MX 2019011827A
Authority
MX
Mexico
Prior art keywords
transmission line
output
power amplifier
input
input signal
Prior art date
Application number
MX2019011827A
Other languages
English (en)
Inventor
Hellberg Richard
Original Assignee
Ericsson Telefon Ab L M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M
Publication of MX2019011827A publication Critical patent/MX2019011827A/es

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/605—Distributed amplifiers
    • H03F3/607—Distributed amplifiers using FET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0261—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0277—Selecting one or more amplifiers from a plurality of amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0288—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/18—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of distributed coupling, i.e. distributed amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/30—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
    • H03F3/3001—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor with field-effect transistors
    • H03F3/301—CMOS common drain output SEPP amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45183—Long tailed pairs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/09—A balun, i.e. balanced to or from unbalanced converter, being present at the output of an amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/315—Indexing scheme relating to amplifiers the loading circuit of an amplifying stage comprising a transmission line
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/432—Two or more amplifiers of different type are coupled in parallel at the input or output, e.g. a class D and a linear amplifier, a class B and a class A amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/516—Some amplifier stages of an amplifier use supply voltages of different value
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/522—Indexing scheme relating to amplifiers the bias or supply voltage or current of the gate side of a FET amplifier being controlled to be on or off by a switch
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/541—Transformer coupled at the output of an amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/75—Indexing scheme relating to amplifiers the amplifier stage being a common source configuration MOSFET

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
  • Microwave Amplifiers (AREA)
  • Transmitters (AREA)

Abstract

Una disposición de amplificador de potencia (200) para amplificar una señal de entrada para producir una señal de salida comprende una pluralidad N de secciones de amplificador (212, 213), una primera línea de transmisión de entrada (221) que comprende varios segmentos y una primera línea de transmisión de salida (231) que comprende varios segmentos. Cada sección de amplificador comprende uno o más primeros transistores (T1) distribuidos a lo largo de la primera línea de transmisión de entrada (221) y la primera línea de transmisión de salida (231). Cada sección de amplificador está configurada para amplificar una porción de la señal de entrada para producir una porción de la señal de salida. Una porción de la señal de entrada es una de las N porciones de la señal de entrada dividida en cualquiera o en una combinación de una base de amplitud y una base de tiempo. La señal de salida se produce al final de la primera línea de transmisión de salida (231) al apilar N pociones de la señal de salida de cada sección de amplificador.
MX2019011827A 2017-04-06 2017-04-06 Disposicion de amplificador de potencia de banda ancha. MX2019011827A (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/SE2017/050342 WO2018186776A1 (en) 2017-04-06 2017-04-06 Wideband power amplifier arrangement

Publications (1)

Publication Number Publication Date
MX2019011827A true MX2019011827A (es) 2019-12-09

Family

ID=58548831

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2019011827A MX2019011827A (es) 2017-04-06 2017-04-06 Disposicion de amplificador de potencia de banda ancha.

Country Status (6)

Country Link
US (1) US11652452B2 (es)
EP (1) EP3607657B1 (es)
JP (1) JP2020516192A (es)
MX (1) MX2019011827A (es)
WO (1) WO2018186776A1 (es)
ZA (1) ZA201906046B (es)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4200980A4 (en) * 2020-08-19 2024-04-24 Telefonaktiebolaget LM Ericsson (publ) POWER COMBINATOR FOR AMPLIFIER ARRANGEMENT

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58146108A (ja) * 1982-02-24 1983-08-31 Nippon Gakki Seizo Kk 電力増幅器
DE3465857D1 (en) * 1983-05-10 1987-10-08 Bbc Brown Boveri & Cie Digital power switching amplifier
US4748421A (en) * 1987-04-08 1988-05-31 Scs Telecom, Inc. Enhanced class SM power amplifier
JPH03201709A (ja) * 1989-12-28 1991-09-03 Fujitsu Ltd 分布型マイクロ波増幅器
JPH06260858A (ja) * 1993-03-03 1994-09-16 Sanyo Electric Co Ltd 電力増幅装置
JPH0715253A (ja) 1993-06-25 1995-01-17 Nec Corp 振幅変調送信機
JP3053809B1 (ja) * 1999-03-10 2000-06-19 株式会社ワイ・アール・ピー高機能移動体通信研究所 線形増幅回路
JP4255703B2 (ja) * 2003-01-29 2009-04-15 三菱電機株式会社 カスコード電力増幅器
DE102004021155B3 (de) * 2004-04-29 2005-12-29 Infineon Technologies Ag Wanderwellenverstärker
US7242245B2 (en) * 2004-07-08 2007-07-10 Amalfi Semiconductor, Inc. Method and apparatus for an improved power amplifier
US7268627B2 (en) * 2004-11-03 2007-09-11 Theta Microelectronics, Inc. Pre-matching of distributed and push-pull power transistors
JP4220982B2 (ja) * 2005-06-08 2009-02-04 富士通株式会社 分布型増幅器
US8274332B2 (en) * 2007-04-23 2012-09-25 Dali Systems Co. Ltd. N-way Doherty distributed power amplifier with power tracking
JP2011066599A (ja) * 2009-09-16 2011-03-31 Renesas Electronics Corp 電力増幅装置
WO2012076924A1 (en) * 2010-12-09 2012-06-14 Freescale Semiconductors, Inc. Rf amplifier circuit and electronic system comprising such a circuit
JP5902070B2 (ja) * 2012-08-27 2016-04-13 株式会社東芝 電力増幅装置及び送信機
US8912937B2 (en) 2012-12-31 2014-12-16 Broadcom Corporation High efficiency output stage amplification for radio frequency (RF) transmitters
JP2015170957A (ja) * 2014-03-06 2015-09-28 富士通株式会社 増幅回路
DK3205015T3 (da) * 2014-10-06 2020-06-02 Ericsson Telefon Ab L M Forstærkerkredsløb og fremgangsmåde
JP6565231B2 (ja) * 2015-03-06 2019-08-28 富士通株式会社 分布型増幅器
EP3295561B1 (en) 2015-05-12 2020-07-08 Telefonaktiebolaget LM Ericsson (publ) Composite power amplifier
JP6648900B2 (ja) * 2015-06-08 2020-02-14 日本電気株式会社 電力増幅装置およびテレビジョン信号送信システム
TWI750216B (zh) * 2016-08-30 2021-12-21 美商Ｍａｃｏｍ技術方案控股公司 具分散式架構之驅動器

Also Published As

Publication number Publication date
EP3607657A1 (en) 2020-02-12
WO2018186776A1 (en) 2018-10-11
US20200136573A1 (en) 2020-04-30
JP2020516192A (ja) 2020-05-28
ZA201906046B (en) 2021-02-24
EP3607657B1 (en) 2022-03-02
US11652452B2 (en) 2023-05-16

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