MX2009004895A - Dispositivos fotovoltaicos que incluyen contacto metalico con nitrogeno. - Google Patents

Dispositivos fotovoltaicos que incluyen contacto metalico con nitrogeno.

Info

Publication number
MX2009004895A
MX2009004895A MX2009004895A MX2009004895A MX2009004895A MX 2009004895 A MX2009004895 A MX 2009004895A MX 2009004895 A MX2009004895 A MX 2009004895A MX 2009004895 A MX2009004895 A MX 2009004895A MX 2009004895 A MX2009004895 A MX 2009004895A
Authority
MX
Mexico
Prior art keywords
containing metal
metal contact
devices including
photovoltaic devices
including nitrogen
Prior art date
Application number
MX2009004895A
Other languages
English (en)
Inventor
Syed Zafar
Upali Jayamaha
Michael T Steele
Original Assignee
First Solar Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by First Solar Inc filed Critical First Solar Inc
Publication of MX2009004895A publication Critical patent/MX2009004895A/es

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022408Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0749Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884Manufacture of transparent electrodes, e.g. TCO, ITO
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/541CuInSe2 material PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/543Solar cells from Group II-VI materials
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Una celda fotovoltaica puede incluir una capa metálica que contiene nitrógeno en contacto con una capa semiconductora.
MX2009004895A 2006-11-07 2007-11-06 Dispositivos fotovoltaicos que incluyen contacto metalico con nitrogeno. MX2009004895A (es)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US86470906P 2006-11-07 2006-11-07
US11/935,112 US9147778B2 (en) 2006-11-07 2007-11-05 Photovoltaic devices including nitrogen-containing metal contact
PCT/US2007/083758 WO2008058119A2 (en) 2006-11-07 2007-11-06 Photovoltaic devices including nitrogen-containing metal contact

Publications (1)

Publication Number Publication Date
MX2009004895A true MX2009004895A (es) 2009-05-19

Family

ID=39365307

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2009004895A MX2009004895A (es) 2006-11-07 2007-11-06 Dispositivos fotovoltaicos que incluyen contacto metalico con nitrogeno.

Country Status (5)

Country Link
US (4) US9147778B2 (es)
EP (1) EP2080229B1 (es)
MX (1) MX2009004895A (es)
MY (1) MY171673A (es)
WO (1) WO2008058119A2 (es)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9147778B2 (en) 2006-11-07 2015-09-29 First Solar, Inc. Photovoltaic devices including nitrogen-containing metal contact
EP2215662B1 (en) 2007-11-02 2020-12-16 First Solar, Inc Method of manufacturing photovoltaic devices including doped semiconductor films
WO2010068282A2 (en) * 2008-12-10 2010-06-17 The Regents Of The University Of California Compositions and methods for synthesis of hydrogen fuel
WO2010126699A2 (en) 2009-04-29 2010-11-04 Hunter Douglas Industries B.V. Architectural panels with organic photovoltaic interlayers and methods of forming the same
US8262894B2 (en) 2009-04-30 2012-09-11 Moses Lake Industries, Inc. High speed copper plating bath
US20100307568A1 (en) * 2009-06-04 2010-12-09 First Solar, Inc. Metal barrier-doped metal contact layer
WO2010141463A1 (en) * 2009-06-04 2010-12-09 First Solar, Inc. Dopant-containing contact material
JP5362016B2 (ja) * 2009-09-04 2013-12-11 三菱電機株式会社 太陽電池およびその製造方法
US20110132450A1 (en) * 2009-11-08 2011-06-09 First Solar, Inc. Back Contact Deposition Using Water-Doped Gas Mixtures
IN2012DN05898A (es) * 2009-12-18 2015-09-18 First Solar Inc
WO2011123117A1 (en) * 2010-03-31 2011-10-06 University Of Rochester Photovoltaic cells with improved electrical contact
US9461186B2 (en) 2010-07-15 2016-10-04 First Solar, Inc. Back contact for a photovoltaic module
KR101846337B1 (ko) 2011-11-09 2018-04-09 엘지이노텍 주식회사 태양전지 및 이의 제조방법
CN104081544B (zh) * 2012-01-13 2019-01-22 应用材料公司 用于硅基光电装置的高功函数缓冲层
US9698285B2 (en) 2013-02-01 2017-07-04 First Solar, Inc. Photovoltaic device including a P-N junction and method of manufacturing
EP2973736B1 (en) * 2013-03-15 2022-01-26 Arkema, Inc. Nitrogen-containing transparent conductive oxide cap layer composition
US11876140B2 (en) 2013-05-02 2024-01-16 First Solar, Inc. Photovoltaic devices and method of making
CN104183663B (zh) 2013-05-21 2017-04-12 第一太阳能马来西亚有限公司 光伏器件及其制备方法
CN103290367B (zh) * 2013-05-29 2015-02-11 哈尔滨工业大学 一种薄膜体声波谐振器下电极的制备方法
US10062800B2 (en) 2013-06-07 2018-08-28 First Solar, Inc. Photovoltaic devices and method of making
WO2015126918A1 (en) * 2014-02-19 2015-08-27 Lucintech, Inc. Flexible solar cells and method of producing same
US10529883B2 (en) * 2014-11-03 2020-01-07 First Solar, Inc. Photovoltaic devices and method of manufacturing
CN113261116B (zh) 2018-10-24 2024-10-11 第一阳光公司 具有v族掺杂的光伏器件用缓冲层
WO2020139826A1 (en) 2018-12-27 2020-07-02 First Solar, Inc. Photovoltaic devices and methods of forming the same
CN109830561B (zh) * 2019-02-20 2021-09-03 成都中建材光电材料有限公司 一种碲化镉薄膜太阳能电池组件及其制备方法
US11257978B2 (en) 2019-03-29 2022-02-22 Utica Leaseco, Llc Front metal contact stack
CN118281090B (zh) * 2024-05-24 2024-10-11 通威太阳能(安徽)有限公司 太阳电池及其制备方法、生产设备

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BR7507192A (pt) * 1974-11-08 1976-08-10 Western Electric Co Celula fotovoltaica e processo para sua fabricacao
US4064522A (en) 1976-02-04 1977-12-20 Exxon Research & Engineering Co. High efficiency selenium heterojunction solar cells
US4197141A (en) 1978-01-31 1980-04-08 Massachusetts Institute Of Technology Method for passivating imperfections in semiconductor materials
US4259122A (en) 1978-12-08 1981-03-31 Exxon Research And Engineering Co. Selenium photovoltaic device
US4320249A (en) * 1979-08-13 1982-03-16 Shunpei Yamazaki Heterojunction type semiconductor photoelectric conversion device
US4260428A (en) * 1980-03-05 1981-04-07 Ses, Incorporated Photovoltaic cell
US4338482A (en) * 1981-02-17 1982-07-06 Roy G. Gordon Photovoltaic cell
US4582764A (en) * 1982-09-24 1986-04-15 Energy Conversion Devices, Inc. Selective absorber amorphous alloys and devices
US4485265A (en) * 1982-11-22 1984-11-27 President And Fellows Of Harvard College Photovoltaic cell
JPS59147469A (ja) * 1983-02-14 1984-08-23 Hitachi Ltd 非晶質シリコン太陽電池
US4598306A (en) * 1983-07-28 1986-07-01 Energy Conversion Devices, Inc. Barrier layer for photovoltaic devices
US4568792A (en) 1984-02-02 1986-02-04 Sri International Photovoltaic cell including doped cadmium telluride, a dislocation preventing agent and improved ohmic contacts
AU616736B2 (en) * 1988-03-03 1991-11-07 Asahi Glass Company Limited Amorphous oxide film and article having such film thereon
US5136346A (en) 1990-09-07 1992-08-04 Motorola, Inc. Photon stimulated variable capacitance effect devices
US5248349A (en) * 1992-05-12 1993-09-28 Solar Cells, Inc. Process for making photovoltaic devices and resultant product
US6541695B1 (en) 1992-09-21 2003-04-01 Thomas Mowles High efficiency solar photovoltaic cells produced with inexpensive materials by processes suitable for large volume production
US5385848A (en) * 1993-09-20 1995-01-31 Iowa Thin Film Technologies, Inc Method for fabricating an interconnected array of semiconductor devices
DE4333407C1 (de) * 1993-09-30 1994-11-17 Siemens Ag Solarzelle mit einer Chalkopyritabsorberschicht
JPH1154773A (ja) * 1997-08-01 1999-02-26 Canon Inc 光起電力素子及びその製造方法
US6852614B1 (en) 2000-03-24 2005-02-08 University Of Maine Method of manufacturing semiconductor having group II-group VI compounds doped with nitrogen
FR2820241B1 (fr) * 2001-01-31 2003-09-19 Saint Gobain Substrat transparent muni d'une electrode
JP4560245B2 (ja) 2001-06-29 2010-10-13 キヤノン株式会社 光起電力素子
WO2004008540A1 (en) 2002-07-16 2004-01-22 Stmicroelectronics Nv Tfa image sensor with stability-optimized photodiode
WO2004032189A2 (en) * 2002-09-30 2004-04-15 Miasolé Manufacturing apparatus and method for large-scale production of thin-film solar cells
US7141863B1 (en) 2002-11-27 2006-11-28 University Of Toledo Method of making diode structures
US7123638B2 (en) 2003-10-17 2006-10-17 Avago Technologies General Ip (Singapore) Pte. Ltd. Tunnel-junction structure incorporating N-type layer comprising nitrogen and a group VI dopant
US7663057B2 (en) 2004-02-19 2010-02-16 Nanosolar, Inc. Solution-based fabrication of photovoltaic cell
SE0400631D0 (sv) * 2004-03-11 2004-03-11 Forskarpatent I Uppsala Ab Thin film solar cell and manufacturing method
US7374963B2 (en) * 2004-03-15 2008-05-20 Solopower, Inc. Technique and apparatus for depositing thin layers of semiconductors for solar cell fabrication
US7405143B2 (en) 2004-03-25 2008-07-29 Asm International N.V. Method for fabricating a seed layer
US20050257824A1 (en) * 2004-05-24 2005-11-24 Maltby Michael G Photovoltaic cell including capping layer
US7288332B2 (en) * 2005-10-06 2007-10-30 Los Almos National Security, Llc Conductive layer for biaxially oriented semiconductor film growth
US8373060B2 (en) 2006-10-24 2013-02-12 Zetta Research and Development LLC—AQT Series Semiconductor grain microstructures for photovoltaic cells
US9147778B2 (en) 2006-11-07 2015-09-29 First Solar, Inc. Photovoltaic devices including nitrogen-containing metal contact

Also Published As

Publication number Publication date
US20230317864A1 (en) 2023-10-05
US20190148571A1 (en) 2019-05-16
US20080110498A1 (en) 2008-05-15
MY171673A (en) 2019-10-23
US11695085B2 (en) 2023-07-04
US9147778B2 (en) 2015-09-29
WO2008058119A2 (en) 2008-05-15
EP2080229B1 (en) 2017-10-11
US20150380601A1 (en) 2015-12-31
EP2080229A2 (en) 2009-07-22
EP2080229A4 (en) 2016-04-13
WO2008058119A3 (en) 2008-08-21

Similar Documents

Publication Publication Date Title
MY171673A (en) Photovoltaic devices including nitrogen-containing metal contact
MX2009005459A (es) Dispositivo fotovoltaico que incluye apilamiento de metal.
MY157221A (en) Photovoltaic devices including an interfacial layer
MX2010004731A (es) Dispositivos fotovoltaicos que incluyen peliculas semiconductoras impurificadas.
TWI349372B (en) Solar cell with reduced base diffusion area
EP2058865A4 (en) PROCESS FOR FORMING SEMICONDUCTOR SUBSTRATE AND ELECTRODE AND METHOD FOR MANUFACTURING SOLAR BATTERY
EP1876651A4 (en) SOLAR CELL MANUFACTURING METHOD, SOLAR CELL AND METHOD FOR PRODUCING SEMICONDUCTOR COMPONENTS
EP2051304A4 (en) SEMICONDUCTOR SUBSTRATE, METHOD FOR PRODUCING AN ELECTRODE, AND METHOD FOR MANUFACTURING SOLAR CELL
EP2100336A4 (en) INTERCONNECTION TECHNOLOGIES FOR REAR CONTACT SOLAR CELLS AND MODULES
EP2016627A4 (en) SOLAR CELL WITH HETERO-TRANSFER CONTACTS FROM DOTED SEMICONDUCTOR
GB2440038B (en) Metal substrate for fuel cells
EP2257991A4 (en) RESIST CONTACT SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME
EP1756871A4 (en) PHOTOVOLTAIC CELL WITH COVERED LAYER
MX2010003226A (es) Dispositivos fotovoltaicos que incluyen heterouniones.
EP2087151A4 (en) Electrolytic deposition with coupled rollers for the production of a photovoltaic film
EP1733426A4 (en) SOLAR BATTERIES WITH CONTACTS ENFOUIS WITH SELF-DOPING CONTACTS
WO2009094663A3 (en) Photovoltaic devices having metal oxide electron-transport layers
HK1124960A1 (en) Organic photovoltaic cells utilizing ultrathin sensitizing layer
GB0519599D0 (en) Photovoltaic cells
EP2084752A4 (en) SUBSTRATE EQUIPPED WITH A TRANSPARENT CONDUCTIVE FILM FOR A PHOTOELECTRIC TRANSDUCER, METHOD FOR THE PRODUCTION OF THE SUBSTRATE, AND THE SUBSTRATE USING PHOTOELECTRIC TRANSDUCER
EP1979951A4 (en) SOLAR CELL
EP1974391A4 (en) PASSIVATION LAYER FOR PHOTO ELEMENTS
GB0718754D0 (en) Organic compound,photovoltaic layer and organic photovoltaic device
EP2071633A4 (en) TRANSPARENT ELECTRODE SUBSTRATE FOR SOLAR CELL
EP2095429A4 (en) SOLAR CELL AND METHOD FOR THE PRODUCTION THEREOF

Legal Events

Date Code Title Description
HH Correction or change in general
FG Grant or registration