MX159938A - Mejoras al sistema de introduccion y canalizacion de gas en un aparato de deposicion por descarga incandescente - Google Patents

Mejoras al sistema de introduccion y canalizacion de gas en un aparato de deposicion por descarga incandescente

Info

Publication number
MX159938A
MX159938A MX200650A MX20065084A MX159938A MX 159938 A MX159938 A MX 159938A MX 200650 A MX200650 A MX 200650A MX 20065084 A MX20065084 A MX 20065084A MX 159938 A MX159938 A MX 159938A
Authority
MX
Mexico
Prior art keywords
gas introduction
deposition device
channeling system
incandescent discharge
incandescent
Prior art date
Application number
MX200650A
Other languages
English (en)
Inventor
Joachim Doehler
Kevin R Hoffman
Timothy D Laarman
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of MX159938A publication Critical patent/MX159938A/es

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Chemical Vapour Deposition (AREA)
MX200650A 1983-03-14 1984-03-13 Mejoras al sistema de introduccion y canalizacion de gas en un aparato de deposicion por descarga incandescente MX159938A (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/475,289 US4479455A (en) 1983-03-14 1983-03-14 Process gas introduction and channeling system to produce a profiled semiconductor layer

Publications (1)

Publication Number Publication Date
MX159938A true MX159938A (es) 1989-10-06

Family

ID=23886948

Family Applications (1)

Application Number Title Priority Date Filing Date
MX200650A MX159938A (es) 1983-03-14 1984-03-13 Mejoras al sistema de introduccion y canalizacion de gas en un aparato de deposicion por descarga incandescente

Country Status (6)

Country Link
US (1) US4479455A (es)
EP (1) EP0119103A3 (es)
JP (1) JPH0824107B2 (es)
KR (1) KR920003309B1 (es)
CA (1) CA1206244A (es)
MX (1) MX159938A (es)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3429899A1 (de) * 1983-08-16 1985-03-07 Canon K.K., Tokio/Tokyo Verfahren zur bildung eines abscheidungsfilms
JPS617624A (ja) * 1984-06-22 1986-01-14 Fuji Xerox Co Ltd 密着型イメージセンサ
US4678679A (en) * 1984-06-25 1987-07-07 Energy Conversion Devices, Inc. Continuous deposition of activated process gases
US4608943A (en) * 1984-10-24 1986-09-02 Sovonics Solar Systems Cathode assembly with localized profiling capabilities
JPH0722127B2 (ja) * 1985-02-20 1995-03-08 株式会社日立製作所 反応・処理装置内の清浄化および反応・処理用気相物質の純化方法、および反応・処理装置
US4626447A (en) * 1985-03-18 1986-12-02 Energy Conversion Devices, Inc. Plasma confining apparatus
US4816324A (en) * 1986-05-14 1989-03-28 Atlantic Richfield Company Flexible photovoltaic device
JPH0423429A (ja) * 1990-05-18 1992-01-27 Mitsubishi Electric Corp 半導体装置のプラズマ処理装置及びプラズマ処理方法
US5180434A (en) * 1991-03-11 1993-01-19 United Solar Systems Corporation Interfacial plasma bars for photovoltaic deposition apparatus
US6066826A (en) * 1998-03-16 2000-05-23 Yializis; Angelo Apparatus for plasma treatment of moving webs
JP4316767B2 (ja) 2000-03-22 2009-08-19 株式会社半導体エネルギー研究所 基板処理装置
JP4439665B2 (ja) 2000-03-29 2010-03-24 株式会社半導体エネルギー研究所 プラズマｃｖｄ装置
US20060278163A1 (en) * 2002-08-27 2006-12-14 Ovshinsky Stanford R High throughput deposition apparatus with magnetic support
EP1810344A2 (en) * 2004-11-10 2007-07-25 Daystar Technologies, Inc. Pallet based system for forming thin-film solar cells
US20060096536A1 (en) * 2004-11-10 2006-05-11 Daystar Technologies, Inc. Pressure control system in a photovoltaic substrate deposition apparatus
US9252318B2 (en) * 2008-03-05 2016-02-02 Hanergy Hi-Tech Power (Hk) Limited Solution containment during buffer layer deposition

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3441454A (en) * 1965-10-29 1969-04-29 Westinghouse Electric Corp Method of fabricating a semiconductor by diffusion
GB1282866A (en) * 1968-08-16 1972-07-26 Pilkington Brothers Ltd Improvements in or relating to the production of glass having desired surface characteristics
GB1282322A (en) * 1968-08-29 1972-07-19 Texas Instruments Inc Continuous deposition system
US3660179A (en) * 1970-08-17 1972-05-02 Westinghouse Electric Corp Gaseous diffusion technique
JPS4834798A (es) * 1971-09-06 1973-05-22
JPS53105366A (en) * 1977-02-25 1978-09-13 Hitachi Ltd Manufacture for semiconductor element substrate
JPS53106392A (en) * 1977-02-28 1978-09-16 Nissan Motor Co Ltd Chemical plating method in gas phase
JPS5437077A (en) * 1977-08-02 1979-03-19 Agency Of Ind Science & Technol Chemical evaporation method and apparatus for same
JPS60431B2 (ja) * 1979-06-27 1985-01-08 キヤノン株式会社 膜形成法
US4400409A (en) * 1980-05-19 1983-08-23 Energy Conversion Devices, Inc. Method of making p-doped silicon films
JPS5927611B2 (ja) * 1981-08-08 1984-07-06 富士通株式会社 気相成長方法

Also Published As

Publication number Publication date
KR920003309B1 (ko) 1992-04-27
JPH0824107B2 (ja) 1996-03-06
EP0119103A3 (en) 1986-06-18
KR840008211A (ko) 1984-12-13
EP0119103A2 (en) 1984-09-19
US4479455A (en) 1984-10-30
JPS59177922A (ja) 1984-10-08
CA1206244A (en) 1986-06-17

Similar Documents

Publication Publication Date Title
GB2120318B (en) Exhaust gas discharge system
DE3377015D1 (en) Combustible vapor detection system
GB8409140D0 (en) Fuel conveying system
EP0101249A3 (en) Gas sensor
DE3366350D1 (en) Gas detection device
MX159938A (es) Mejoras al sistema de introduccion y canalizacion de gas en un aparato de deposicion por descarga incandescente
GB8310671D0 (en) Exhaust system
GB8323637D0 (en) Test-tube for monitoring gas
GB8332006D0 (en) Fission gas detection system
DE3471184D1 (en) Gas sampling devices
ES528254A0 (es) Perfeccionamientos introducidos en un aparato de deposicion por descarga incandescente
EP0145107A3 (en) Gas discharge detectors
GB8302571D0 (en) Air/fuel ratio monitoring system
ZA841566B (en) Fuel efficient tire
GB2105841B (en) Waste gas purifier
IT1166979B (it) Sistema antighiaccio per turbina a gas
GB8302915D0 (en) Fuel system
DE3463817D1 (en) Device for the purification of exhaust gas
GB8315759D0 (en) Gas valve means
DE3379214D1 (en) Regenerative filter trap system with apparatus for diverting the exhaust gas flow
GB8304838D0 (en) Gas detection
DE3260019D1 (en) Lighting device using gas
GB2117520B (en) Fuel gauging system
GB8322201D0 (en) Pipe system
GB8311052D0 (en) Gas recovery system