JPS53106392A - Chemical plating method in gas phase - Google Patents
Chemical plating method in gas phaseInfo
- Publication number
- JPS53106392A JPS53106392A JP2016877A JP2016877A JPS53106392A JP S53106392 A JPS53106392 A JP S53106392A JP 2016877 A JP2016877 A JP 2016877A JP 2016877 A JP2016877 A JP 2016877A JP S53106392 A JPS53106392 A JP S53106392A
- Authority
- JP
- Japan
- Prior art keywords
- gas phase
- plating method
- chemical plating
- gas
- gas quantity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
- C23C16/45506—Turbulent flow
Abstract
PURPOSE:To plate uniform and smooth film rapidly, inexpensively, and easily by supplying reaction gas contg. gas phase plating material to a material to be plated contained in a reaction tube at least in two directions, and by increasing or decreasing the gas quantity in each direction periodically with total gas quantity maintained at nearly constant.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016877A JPS53106392A (en) | 1977-02-28 | 1977-02-28 | Chemical plating method in gas phase |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016877A JPS53106392A (en) | 1977-02-28 | 1977-02-28 | Chemical plating method in gas phase |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS53106392A true JPS53106392A (en) | 1978-09-16 |
JPS5518784B2 JPS5518784B2 (en) | 1980-05-21 |
Family
ID=12019627
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016877A Granted JPS53106392A (en) | 1977-02-28 | 1977-02-28 | Chemical plating method in gas phase |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS53106392A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0119103A2 (en) * | 1983-03-14 | 1984-09-19 | Energy Conversion Devices, Inc. | Process gas introduction and channeling system |
-
1977
- 1977-02-28 JP JP2016877A patent/JPS53106392A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0119103A2 (en) * | 1983-03-14 | 1984-09-19 | Energy Conversion Devices, Inc. | Process gas introduction and channeling system |
Also Published As
Publication number | Publication date |
---|---|
JPS5518784B2 (en) | 1980-05-21 |
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