MD627F2 - Procedeu de obtinere a straturilor epitaxiale de fosfura de indiu din faza gazoasa - Google Patents
Procedeu de obtinere a straturilor epitaxiale de fosfura de indiu din faza gazoasaInfo
- Publication number
- MD627F2 MD627F2 MD940257A MD940257A MD627F2 MD 627 F2 MD627 F2 MD 627F2 MD 940257 A MD940257 A MD 940257A MD 940257 A MD940257 A MD 940257A MD 627 F2 MD627 F2 MD 627F2
- Authority
- MD
- Moldova
- Prior art keywords
- gaz
- phase
- epitaxy layers
- phosphide indium
- making
- Prior art date
Links
- 238000000407 epitaxy Methods 0.000 title 1
- 229910052738 indium Inorganic materials 0.000 title 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
Landscapes
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MD94-0257A MD627G2 (ro) | 1994-07-25 | 1994-07-25 | Procedeu de obţinere a straturilor epitaxiale de fosfură de indiu din fază gazoasă |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MD94-0257A MD627G2 (ro) | 1994-07-25 | 1994-07-25 | Procedeu de obţinere a straturilor epitaxiale de fosfură de indiu din fază gazoasă |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| MD627F2 true MD627F2 (ro) | 1996-11-29 |
| MD627G2 MD627G2 (ro) | 1997-06-30 |
Family
ID=19738568
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MD94-0257A MD627G2 (ro) | 1994-07-25 | 1994-07-25 | Procedeu de obţinere a straturilor epitaxiale de fosfură de indiu din fază gazoasă |
Country Status (1)
| Country | Link |
|---|---|
| MD (1) | MD627G2 (ro) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MD249Z (ro) * | 2009-04-29 | 2011-02-28 | Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы | Procedeu de fabricare a răcitorului termoelectric pentru substratul circuitului integrat |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MD151Z (ro) * | 2008-12-30 | 2010-09-30 | Государственный Университет Молд0 | Procedeu de creştere a straturilor epitaxiale GaAs într-un reactor orizontal |
-
1994
- 1994-07-25 MD MD94-0257A patent/MD627G2/ro active IP Right Grant
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MD249Z (ro) * | 2009-04-29 | 2011-02-28 | Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы | Procedeu de fabricare a răcitorului termoelectric pentru substratul circuitului integrat |
Also Published As
| Publication number | Publication date |
|---|---|
| MD627G2 (ro) | 1997-06-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FG3A | Granted patent for invention | ||
| IF99 | Valid patent on 19990615 |
Free format text: EXPIRES: 20140725 |