MD507Z - Dispozitiv pentru obţinerea oscilaţiilor bazate pe efectul Gunn - Google Patents
Dispozitiv pentru obţinerea oscilaţiilor bazate pe efectul Gunn Download PDFInfo
- Publication number
- MD507Z MD507Z MDS20110043A MDS20110043A MD507Z MD 507 Z MD507 Z MD 507Z MD S20110043 A MDS20110043 A MD S20110043A MD S20110043 A MDS20110043 A MD S20110043A MD 507 Z MD507 Z MD 507Z
- Authority
- MD
- Moldova
- Prior art keywords
- fixed
- gunn
- contacts
- movable contact
- gunn effect
- Prior art date
Links
- 230000010355 oscillation Effects 0.000 title abstract 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 abstract 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- 230000003321 amplification Effects 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 239000011888 foil Substances 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 238000003199 nucleic acid amplification method Methods 0.000 abstract 1
- 229910052763 palladium Inorganic materials 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 abstract 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
Invenţia se referă la tehnica cu microunde bazată pe semiconductori şi poate fi aplicată la executarea diodelor Gunn pentru diverse domenii ale ştiinţei şi tehnicii, care necesită amplificarea şi generarea oscilaţiilor de frecvenţă ultraînaltă.Dispozitivul pentru obţinerea oscilaţiilor bazate pe efectul Gunn conţine un criostat cu azot lichid (7), în care este amplasat un substrat de getinax foliat cu cupru (2), pe care sunt montate nişte contacte fixe (3), între care este amplasat un contact mobil (5), unit cu unul din contactele fixe (3) printr-un arc (4), pe celălalt contact fix (3) şi contactul mobil (5) este fixat prin intermediul a nişte contacte din paladiu (6) un element de lucru (1), executat dintr-un fir monocristalin din telurură de plumb cu conductibilitate de tip p, cu un diametru de 5÷20 µm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MDS20110043A MD507Z (ro) | 2011-03-03 | 2011-03-03 | Dispozitiv pentru obţinerea oscilaţiilor bazate pe efectul Gunn |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MDS20110043A MD507Z (ro) | 2011-03-03 | 2011-03-03 | Dispozitiv pentru obţinerea oscilaţiilor bazate pe efectul Gunn |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| MD507Y MD507Y (ro) | 2012-04-30 |
| MD507Z true MD507Z (ro) | 2012-11-30 |
Family
ID=46046416
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MDS20110043A MD507Z (ro) | 2011-03-03 | 2011-03-03 | Dispozitiv pentru obţinerea oscilaţiilor bazate pe efectul Gunn |
Country Status (1)
| Country | Link |
|---|---|
| MD (1) | MD507Z (ro) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2014673C1 (ru) * | 1992-01-16 | 1994-06-15 | Василий Иванович Каневский | Высокочастотный прибор на эффекте ганна |
| RU2037916C1 (ru) * | 1992-06-04 | 1995-06-19 | Институт радиотехники и электроники РАН | Твердотельное устройство бегущей волны (варианты) |
| RU2054213C1 (ru) * | 1993-02-24 | 1996-02-10 | Василий Иванович Каневский | Полупроводниковый прибор на эффекте ганна |
| RU2064718C1 (ru) * | 1992-06-04 | 1996-07-27 | Научно-исследовательский институт полупроводниковых приборов | Диод ганна |
| RU2168801C1 (ru) * | 2000-11-28 | 2001-06-10 | Московский государственный институт стали и сплавов (технологический университет) | Диод ганна (варианты) |
| RU2361324C1 (ru) * | 2008-02-15 | 2009-07-10 | Открытое акционерное общество "Научно-исследовательский институт полупроводниковых приборов" (ОАО "НИИПП") | Полупроводниковый прибор с междолинным переносом электронов |
| MD282Z (ro) * | 2009-08-11 | 2011-04-30 | Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы | Dispozitiv de emitere a undelor electromagnetice de frecvenţă foarte înaltă |
-
2011
- 2011-03-03 MD MDS20110043A patent/MD507Z/ro not_active IP Right Cessation
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2014673C1 (ru) * | 1992-01-16 | 1994-06-15 | Василий Иванович Каневский | Высокочастотный прибор на эффекте ганна |
| RU2037916C1 (ru) * | 1992-06-04 | 1995-06-19 | Институт радиотехники и электроники РАН | Твердотельное устройство бегущей волны (варианты) |
| RU2064718C1 (ru) * | 1992-06-04 | 1996-07-27 | Научно-исследовательский институт полупроводниковых приборов | Диод ганна |
| RU2054213C1 (ru) * | 1993-02-24 | 1996-02-10 | Василий Иванович Каневский | Полупроводниковый прибор на эффекте ганна |
| RU2168801C1 (ru) * | 2000-11-28 | 2001-06-10 | Московский государственный институт стали и сплавов (технологический университет) | Диод ганна (варианты) |
| RU2361324C1 (ru) * | 2008-02-15 | 2009-07-10 | Открытое акционерное общество "Научно-исследовательский институт полупроводниковых приборов" (ОАО "НИИПП") | Полупроводниковый прибор с междолинным переносом электронов |
| MD282Z (ro) * | 2009-08-11 | 2011-04-30 | Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы | Dispozitiv de emitere a undelor electromagnetice de frecvenţă foarte înaltă |
Also Published As
| Publication number | Publication date |
|---|---|
| MD507Y (ro) | 2012-04-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FG9Y | Short term patent issued | ||
| KA4Y | Short-term patent lapsed due to non-payment of fees (with right of restoration) |