MD507Z - Device for obtaining oscillations based on Gunn effect - Google Patents
Device for obtaining oscillations based on Gunn effectInfo
- Publication number
- MD507Z MD507Z MDS20110043A MDS20110043A MD507Z MD 507 Z MD507 Z MD 507Z MD S20110043 A MDS20110043 A MD S20110043A MD S20110043 A MDS20110043 A MD S20110043A MD 507 Z MD507 Z MD 507Z
- Authority
- MD
- Moldova
- Prior art keywords
- fixed
- gunn
- contacts
- movable contact
- gunn effect
- Prior art date
Links
- 230000010355 oscillation Effects 0.000 title abstract 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 abstract 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- 230000003321 amplification Effects 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 239000011888 foil Substances 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 238000003199 nucleic acid amplification method Methods 0.000 abstract 1
- 229910052763 palladium Inorganic materials 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 abstract 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
The invention relates to the microwave engineering based on semiconductors and can be used in the manufacture of Gunn diodes for different areas of science and technology, requiring amplification and generation of microwave oscillations.The device for obtaining oscillations based on Gunn effect comprises a cryostat with liquid nitrogen (7), in which is placed a substrate of getinax foil-coated with copper (2), on which are mounted fixed contacts (3), between which is placed a movable contact (5), connected to one of the fixed contacts (3) by means of a spring (4), on the other fixed contact (3) and the movable contact (5) is fixed by means of palladium contacts (6) a working element (1), made of a single-crystal wire of lead telluride of p-type conductivity, with a diameter of 5÷20 µm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MDS20110043A MD507Z (en) | 2011-03-03 | 2011-03-03 | Device for obtaining oscillations based on Gunn effect |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MDS20110043A MD507Z (en) | 2011-03-03 | 2011-03-03 | Device for obtaining oscillations based on Gunn effect |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| MD507Y MD507Y (en) | 2012-04-30 |
| MD507Z true MD507Z (en) | 2012-11-30 |
Family
ID=46046416
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MDS20110043A MD507Z (en) | 2011-03-03 | 2011-03-03 | Device for obtaining oscillations based on Gunn effect |
Country Status (1)
| Country | Link |
|---|---|
| MD (1) | MD507Z (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2014673C1 (en) * | 1992-01-16 | 1994-06-15 | Василий Иванович Каневский | High-frequency device on gunn effect |
| RU2037916C1 (en) * | 1992-06-04 | 1995-06-19 | Институт радиотехники и электроники РАН | Solid device of travelling wave (versions) |
| RU2054213C1 (en) * | 1993-02-24 | 1996-02-10 | Василий Иванович Каневский | Gunn-effect semiconductor device |
| RU2064718C1 (en) * | 1992-06-04 | 1996-07-27 | Научно-исследовательский институт полупроводниковых приборов | Hann diode |
| RU2168801C1 (en) * | 2000-11-28 | 2001-06-10 | Московский государственный институт стали и сплавов (технологический университет) | Gunn-effect diode (design versions) |
| RU2361324C1 (en) * | 2008-02-15 | 2009-07-10 | Открытое акционерное общество "Научно-исследовательский институт полупроводниковых приборов" (ОАО "НИИПП") | Semiconductor device with intervalley transfer of electrons |
| MD282Z (en) * | 2009-08-11 | 2011-04-30 | Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы | Device for emission of electromagnetic microwaves |
-
2011
- 2011-03-03 MD MDS20110043A patent/MD507Z/en not_active IP Right Cessation
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2014673C1 (en) * | 1992-01-16 | 1994-06-15 | Василий Иванович Каневский | High-frequency device on gunn effect |
| RU2037916C1 (en) * | 1992-06-04 | 1995-06-19 | Институт радиотехники и электроники РАН | Solid device of travelling wave (versions) |
| RU2064718C1 (en) * | 1992-06-04 | 1996-07-27 | Научно-исследовательский институт полупроводниковых приборов | Hann diode |
| RU2054213C1 (en) * | 1993-02-24 | 1996-02-10 | Василий Иванович Каневский | Gunn-effect semiconductor device |
| RU2168801C1 (en) * | 2000-11-28 | 2001-06-10 | Московский государственный институт стали и сплавов (технологический университет) | Gunn-effect diode (design versions) |
| RU2361324C1 (en) * | 2008-02-15 | 2009-07-10 | Открытое акционерное общество "Научно-исследовательский институт полупроводниковых приборов" (ОАО "НИИПП") | Semiconductor device with intervalley transfer of electrons |
| MD282Z (en) * | 2009-08-11 | 2011-04-30 | Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы | Device for emission of electromagnetic microwaves |
Also Published As
| Publication number | Publication date |
|---|---|
| MD507Y (en) | 2012-04-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Li et al. | Doping of fullerenes via anion-induced electron transfer and its implication for surfactant facilitated high performance polymer solar cells. | |
| Park et al. | Extremely Low Contact Resistance on Graphene through n-Type Doping and Edge Contact Design. | |
| MY186737A (en) | Enhanced adhesion of seed layer for solar cell conductive contact | |
| AU2014239524A8 (en) | Thermoelectric apparatus and articles and applications thereof | |
| EP2495777A3 (en) | Electrical energy generator | |
| PH12017500341A1 (en) | Solar cell and method for producing thereof | |
| MX2015007998A (en) | Hybrid emitter all back contact solar cell. | |
| EP2772940A3 (en) | Heterostructure Power Transistor with AlSiN Passivation Layer | |
| MY171189A (en) | Solar cell having an emitter region with wide bandgap semiconductor material | |
| GB2509273A (en) | Organic semiconductor formulation | |
| WO2010085081A3 (en) | Electrode structure, device comprising the same and method for forming electrode structure | |
| WO2012054504A3 (en) | Thermoelectric apparatus and applications thereof | |
| MY167874A (en) | Solar cells | |
| WO2013003020A3 (en) | Integral thermoelectric generator for wireless devices | |
| SG195107A1 (en) | An electrical interconnect assembly | |
| ATE520152T1 (en) | POWER SEMICONDUCTOR COMPONENT | |
| WO2012026775A3 (en) | Thermoelectric material, and thermoelectric module and thermoelectric device comprising the thermoelectric material | |
| MY185700A (en) | In-cell bypass diode | |
| IN2012DN05898A (en) | ||
| GB2511245A (en) | Improving metal contacts to group IV semiconductors by inserting interfacial atomic monolayers | |
| WO2014191893A3 (en) | Electrical machine | |
| FR2981507B1 (en) | SECURE THERMOELECTRIC DEVICE | |
| WO2014049080A3 (en) | Optoelectronic component apparatus, method for producing an optoelectronic component apparatus and method for operating an optoelectronic component apparatus | |
| WO2013039613A3 (en) | Low resistivity contact | |
| MD507Y (en) | Device for obtaining oscillations based on Gunn effect |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FG9Y | Short term patent issued | ||
| KA4Y | Short-term patent lapsed due to non-payment of fees (with right of restoration) |