MD507Y - Dispozitiv pentru obţinerea oscilaţiilor bazate pe efectul Gunn - Google Patents

Dispozitiv pentru obţinerea oscilaţiilor bazate pe efectul Gunn Download PDF

Info

Publication number
MD507Y
MD507Y MDS20110043A MDS20110043A MD507Y MD 507 Y MD507 Y MD 507Y MD S20110043 A MDS20110043 A MD S20110043A MD S20110043 A MDS20110043 A MD S20110043A MD 507 Y MD507 Y MD 507Y
Authority
MD
Moldova
Prior art keywords
fixed
gunn
contacts
movable contact
gunn effect
Prior art date
Application number
MDS20110043A
Other languages
English (en)
Moldavian (mo)
Inventor
Efim Zasavitski
Efim Zasaviţchi
Original Assignee
Inst De Ing Electronica Si Nanotehnologii D Ghitu Al Asm
Inst De Ing Electronic & Abreve & Scedil I Nanotehnologii D Ghi & Tcedil U Al A & Scedil M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Inst De Ing Electronica Si Nanotehnologii D Ghitu Al Asm, Inst De Ing Electronic & Abreve & Scedil I Nanotehnologii D Ghi & Tcedil U Al A & Scedil M filed Critical Inst De Ing Electronica Si Nanotehnologii D Ghitu Al Asm
Priority to MDS20110043A priority Critical patent/MD507Z/ro
Publication of MD507Y publication Critical patent/MD507Y/ro
Publication of MD507Z publication Critical patent/MD507Z/ro

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

Invenţia se referă la tehnica cu microunde bazată pe semiconductori şi poate fi aplicată la executarea diodelor Gunn pentru diverse domenii ale ştiinţei şi tehnicii, care necesită amplificarea şi generarea oscilaţiilor de frecvenţă ultraînaltă.Dispozitivul pentru obţinerea oscilaţiilor bazate pe efectul Gunn conţine un criostat cu azot lichid (7), în care este amplasat un substrat de getinax foliat cu cupru (2), pe care sunt montate nişte contacte fixe (3), între care este amplasat un contact mobil (5), unit cu unul din contactele fixe (3) printr-un arc (4), pe celălalt contact fix (3) şi contactul mobil (5) este fixat prin intermediul a nişte contacte din paladiu (6) un element de lucru (1), executat dintr-un fir monocristalin din telurură de plumb cu conductibilitate de tip p, cu un diametru de 5÷20 µm.
MDS20110043A 2011-03-03 2011-03-03 Dispozitiv pentru obţinerea oscilaţiilor bazate pe efectul Gunn MD507Z (ro)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MDS20110043A MD507Z (ro) 2011-03-03 2011-03-03 Dispozitiv pentru obţinerea oscilaţiilor bazate pe efectul Gunn

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MDS20110043A MD507Z (ro) 2011-03-03 2011-03-03 Dispozitiv pentru obţinerea oscilaţiilor bazate pe efectul Gunn

Publications (2)

Publication Number Publication Date
MD507Y true MD507Y (ro) 2012-04-30
MD507Z MD507Z (ro) 2012-11-30

Family

ID=46046416

Family Applications (1)

Application Number Title Priority Date Filing Date
MDS20110043A MD507Z (ro) 2011-03-03 2011-03-03 Dispozitiv pentru obţinerea oscilaţiilor bazate pe efectul Gunn

Country Status (1)

Country Link
MD (1) MD507Z (ro)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2014673C1 (ru) * 1992-01-16 1994-06-15 Василий Иванович Каневский Высокочастотный прибор на эффекте ганна
RU2037916C1 (ru) * 1992-06-04 1995-06-19 Институт радиотехники и электроники РАН Твердотельное устройство бегущей волны (варианты)
RU2064718C1 (ru) * 1992-06-04 1996-07-27 Научно-исследовательский институт полупроводниковых приборов Диод ганна
RU2054213C1 (ru) * 1993-02-24 1996-02-10 Василий Иванович Каневский Полупроводниковый прибор на эффекте ганна
RU2168801C1 (ru) * 2000-11-28 2001-06-10 Московский государственный институт стали и сплавов (технологический университет) Диод ганна (варианты)
RU2361324C1 (ru) * 2008-02-15 2009-07-10 Открытое акционерное общество "Научно-исследовательский институт полупроводниковых приборов" (ОАО "НИИПП") Полупроводниковый прибор с междолинным переносом электронов
MD282Z (ro) * 2009-08-11 2011-04-30 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Dispozitiv de emitere a undelor electromagnetice de frecvenţă foarte înaltă
  • 2011

Also Published As

Publication number Publication date
MD507Z (ro) 2012-11-30

Similar Documents

Publication Publication Date Title
Li et al. Doping of fullerenes via anion-induced electron transfer and its implication for surfactant facilitated high performance polymer solar cells.
Kwon et al. Giant photoamplification in indirect-bandgap multilayer MoS2 phototransistors with local bottom-gate structures.
Park et al. Extremely Low Contact Resistance on Graphene through n-Type Doping and Edge Contact Design.
MY206809A (en) Solar cell emitter region fabrication with differentiated p-type and n-type region architectures
AU2014239524A8 (en) Thermoelectric apparatus and articles and applications thereof
EP2495777A3 (en) Electrical energy generator
PH12017500341A1 (en) Solar cell and method for producing thereof
WO2010085081A3 (en) Electrode structure, device comprising the same and method for forming electrode structure
GB2509273A (en) Organic semiconductor formulation
MY171189A (en) Solar cell having an emitter region with wide bandgap semiconductor material
WO2012054504A3 (en) Thermoelectric apparatus and applications thereof
MY167874A (en) Solar cells
WO2011160051A3 (en) Nanowire led structure and method for manufacturing the same
WO2011063228A3 (en) Betavoltaic apparatus and method
SG195107A1 (en) An electrical interconnect assembly
GB2511245A (en) Improving metal contacts to group IV semiconductors by inserting interfacial atomic monolayers
WO2012026775A3 (en) Thermoelectric material, and thermoelectric module and thermoelectric device comprising the thermoelectric material
MY178458A (en) Photovoltaic devices and methods for making the same
MY185700A (en) In-cell bypass diode
IN2012DN05898A (ro)
FR2981507B1 (fr) Dispositif thermoelectrique securise
WO2013090961A3 (de) Thermo-elektrisches-element
WO2014049080A3 (de) Optoelektronische bauelementevorrichtung, verfahren zum herstellen einer optoelektronischen bauelementevorrichtung und verfahren zum betreiben einer optoelektronischen bauelementevorrichtung
MD507Z (ro) Dispozitiv pentru obţinerea oscilaţiilor bazate pe efectul Gunn
WO2013039613A3 (en) Low resistivity contact

Legal Events

Date Code Title Description
FG9Y Short term patent issued
KA4Y Short-term patent lapsed due to non-payment of fees (with right of restoration)