MD4455B1 - Procedeu de obţinere a monocristalelor de ZnO din faza gazoasă fără germene - Google Patents
Procedeu de obţinere a monocristalelor de ZnO din faza gazoasă fără germene Download PDFInfo
- Publication number
- MD4455B1 MD4455B1 MDA20150119A MD20150119A MD4455B1 MD 4455 B1 MD4455 B1 MD 4455B1 MD A20150119 A MDA20150119 A MD A20150119A MD 20150119 A MD20150119 A MD 20150119A MD 4455 B1 MD4455 B1 MD 4455B1
- Authority
- MD
- Moldova
- Prior art keywords
- unseeded
- zno single
- hcl
- single crystals
- growth
- Prior art date
Links
- 239000013078 crystal Substances 0.000 title abstract 4
- 239000004065 semiconductor Substances 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Invenţia se referă la tehnica semiconductoare, şi anume la procedeele de obţinere a materialelor semiconductoare, în particular la creşterea monocristalelor de ZnO din faza gazoasă fără germene într-un volum închis.Procedeul, conform invenţiei, constă în creşterea monocristalului de ZnO din faza gazoasă fără germene într-un volum închis la temperatura de 900…1100°C cu o diferenţă de temperatură dintre materialul de creştere şi cristalul în creştere de 5…30°C, care se efectuează cu utilizarea agenţilor chimici de transport, aşa ca HCl cu o presiune iniţială la temperatura de creştere de 1...5 atm, carbon în proporţie HCl:C = 2:(1…1,5) moli şi hidrogen, menţinut în procesul de creştere la o presiune constantă egală cu 50…200% din presiunea iniţială a HCl.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MDA20150119A MD4455C1 (ro) | 2015-11-27 | 2015-11-27 | Procedeu de obţinere a monocristalelor de ZnO din faza gazoasă fără germene |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MDA20150119A MD4455C1 (ro) | 2015-11-27 | 2015-11-27 | Procedeu de obţinere a monocristalelor de ZnO din faza gazoasă fără germene |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| MD4455B1 true MD4455B1 (ro) | 2016-12-31 |
| MD4455C1 MD4455C1 (ro) | 2017-07-31 |
Family
ID=57680014
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MDA20150119A MD4455C1 (ro) | 2015-11-27 | 2015-11-27 | Procedeu de obţinere a monocristalelor de ZnO din faza gazoasă fără germene |
Country Status (1)
| Country | Link |
|---|---|
| MD (1) | MD4455C1 (ro) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MD4517C1 (ro) * | 2016-10-11 | 2018-04-30 | Государственный Университет Молд0 | Procedeu de obţinere a monocristalelor de ZnO din faza gazoasă fără germene |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MD3320G2 (ro) * | 2006-03-24 | 2007-12-31 | Институт Прикладной Физики Академии Наук Молдовы | Procedeu de obţinere a oxidului de zinc nanostructurat |
| CN101445265A (zh) * | 2008-09-23 | 2009-06-03 | 河南大学 | 气相沉积制备掺杂单晶氧化锌纳米螺丝刀的方法及其装置 |
-
2015
- 2015-11-27 MD MDA20150119A patent/MD4455C1/ro not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MD4517C1 (ro) * | 2016-10-11 | 2018-04-30 | Государственный Университет Молд0 | Procedeu de obţinere a monocristalelor de ZnO din faza gazoasă fără germene |
Also Published As
| Publication number | Publication date |
|---|---|
| MD4455C1 (ro) | 2017-07-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB2548501A (en) | Highly twinned, oriented polycrystalline diamond film and method of manufacture thereof | |
| TW201612179A (en) | A process for preparing a crystalline organic semiconductor material | |
| WO2018013991A3 (en) | Manufacturing apparatus and method for making silicon nanowires on carbon based powders for use in batteries | |
| WO2019092654A3 (en) | Systems and methods for production and separation of hydrogen and carbon dioxide | |
| PH12018500293A1 (en) | A method of producing a two-dimensional material | |
| FR2966474B1 (fr) | Procede de fabrication d'un materiau nanocristallin | |
| GB2548280A (en) | Apparatus and method of manufacturing free standing CVD polycrystalline diamond films | |
| WO2012002995A3 (en) | Thin films and methods of making them using cyclohexasilane | |
| GB201205801D0 (en) | Process | |
| JP2013212952A5 (ro) | ||
| WO2020068200A3 (en) | Unusual high thermal conductivity in boron arsenide bulk crystals | |
| MX2018005908A (es) | Proceso para preparar 2,3,3,3-tetrafluoropropeno y/o fluoruro de vinilideno. | |
| MY196081A (en) | A Hydrogen-Containing Rare Earth Fluoride Compound, the Preparation Method and its Application | |
| SG11201906821PA (en) | Process for manufacturing a two-dimensional film of hexagonal crystalline structure | |
| WO2014008453A3 (en) | Controlled epitaxial boron nitride growth for graphene based transistors | |
| FI20115321A0 (fi) | Menetelmä yhden tai useamman monikiteisen piikerroksen kerrrostamiseksi substraatille | |
| SG11201805526PA (en) | Single-crystal diamond, method for manufacturing single-crystal diamond, and chemical vapor deposition device used in same | |
| MY170523A (en) | Process for depositing polycrystalline silicon | |
| MY168657A (en) | Fermentation process for producing chemicals | |
| MD4455B1 (ro) | Procedeu de obţinere a monocristalelor de ZnO din faza gazoasă fără germene | |
| Biefeld et al. | The science and practice of metal-organic vapor phase epitaxy (MOVPE) | |
| WO2014154424A3 (fr) | Procédé de dépôt de diamant en phase vapeur | |
| MX2016012851A (es) | Un metodo para producir 1,1,2,3-tetracloropropeno con alto rendimiento. | |
| Robinson et al. | Chemical vapor deposition of two-dimensional crystals | |
| MD20150067A2 (ro) | Procedeu de obţinere a monocristalelor de ZnO din faza gazoasă |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FG4A | Patent for invention issued | ||
| KA4A | Patent for invention lapsed due to non-payment of fees (with right of restoration) | ||
| MM4A | Patent for invention definitely lapsed due to non-payment of fees |