MD4276C1 - Installation for the production of thin layers of chalcogenide glass-like semiconductors - Google Patents
Installation for the production of thin layers of chalcogenide glass-like semiconductorsInfo
- Publication number
- MD4276C1 MD4276C1 MDA20120104A MD20120104A MD4276C1 MD 4276 C1 MD4276 C1 MD 4276C1 MD A20120104 A MDA20120104 A MD A20120104A MD 20120104 A MD20120104 A MD 20120104A MD 4276 C1 MD4276 C1 MD 4276C1
- Authority
- MD
- Moldova
- Prior art keywords
- chalcogenide glass
- production
- semiconductors
- thin layers
- sleeves
- Prior art date
Links
Landscapes
- Glass Compositions (AREA)
Abstract
The invention relates to installations for the production of homogeneous thin layers of chalcogenide glass-like semiconductors and can be used in the creation of photosensitive layers for electrophotography and of the photothermoplastic carrier for recording of optical information.The installation for the production of thin layers of chalcogenide glass-like semiconductors includes a metering device (1), under which is placed a trough (2), in the lower part of which is placed an evaporator (3), above which is placed a lavsan band-driving mechanism (4) with condensation zone. The metering device (1) comprises a hopper for chalcogenide glass-like semiconductor powder, fixed to the housing of the metering device by means of a guide, wherein are made nine through holes. The housing consists of two half-sleeves, in each of which are formed nine through holes. The half-sleeves are interconnected and fixed onto a support by means of spring-loaded bolts. Between the half-sleeves is placed a shaft, wherein are made nine through holes with equal volume, displaced relative to each other by 20° along the shaft.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
MDA20120104A MD4276C1 (en) | 2012-11-13 | 2012-11-13 | Installation for the production of thin layers of chalcogenide glass-like semiconductors |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
MDA20120104A MD4276C1 (en) | 2012-11-13 | 2012-11-13 | Installation for the production of thin layers of chalcogenide glass-like semiconductors |
Publications (2)
Publication Number | Publication Date |
---|---|
MD4276B1 MD4276B1 (en) | 2014-02-28 |
MD4276C1 true MD4276C1 (en) | 2014-09-30 |
Family
ID=50231647
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MDA20120104A MD4276C1 (en) | 2012-11-13 | 2012-11-13 | Installation for the production of thin layers of chalcogenide glass-like semiconductors |
Country Status (1)
Country | Link |
---|---|
MD (1) | MD4276C1 (en) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SU370278A1 (en) * | 1970-10-23 | 1973-02-15 | METHOD OF OBTAINING PHOTO-SENSITIVE LAYERS | |
US6027621A (en) * | 1997-04-25 | 2000-02-22 | Shimadzu Corporation | Thin film forming apparatus |
RU2194807C2 (en) * | 1996-11-29 | 2002-12-20 | Йеда Рисерч Энд Дивелопмент Ко., Лтд. | Process generating nonoparticles or filiform nonocrystals, process producing inorganic fuller-like structures of metal chalcogenide, inorganic fuller-like structures of metal chalocogenide, stable suspension of if structures of metal chalcogenide, process of production of thin films from if structures of metal chalcogenide, thin film produced by this process and attachment for scanning microscope |
WO2013149572A1 (en) * | 2012-04-02 | 2013-10-10 | Xu Mingsheng | Equipment for large-scale continuous preparation of two-dimensional nanometer thin film |
-
2012
- 2012-11-13 MD MDA20120104A patent/MD4276C1/en not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SU370278A1 (en) * | 1970-10-23 | 1973-02-15 | METHOD OF OBTAINING PHOTO-SENSITIVE LAYERS | |
RU2194807C2 (en) * | 1996-11-29 | 2002-12-20 | Йеда Рисерч Энд Дивелопмент Ко., Лтд. | Process generating nonoparticles or filiform nonocrystals, process producing inorganic fuller-like structures of metal chalcogenide, inorganic fuller-like structures of metal chalocogenide, stable suspension of if structures of metal chalcogenide, process of production of thin films from if structures of metal chalcogenide, thin film produced by this process and attachment for scanning microscope |
US6027621A (en) * | 1997-04-25 | 2000-02-22 | Shimadzu Corporation | Thin film forming apparatus |
WO2013149572A1 (en) * | 2012-04-02 | 2013-10-10 | Xu Mingsheng | Equipment for large-scale continuous preparation of two-dimensional nanometer thin film |
Non-Patent Citations (1)
Title |
---|
Майсел Л., Глэнг Р. Технология тонких пленок, Справочник, Москва, 1977, т. 1, с. 125-133 * |
Also Published As
Publication number | Publication date |
---|---|
MD4276B1 (en) | 2014-02-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FG4A | Patent for invention issued | ||
KA4A | Patent for invention lapsed due to non-payment of fees (with right of restoration) | ||
MM4A | Patent for invention definitely lapsed due to non-payment of fees |