MD4276B1 - Installation for the production of thin layers of chalcogenide glass-like semiconductors - Google Patents

Installation for the production of thin layers of chalcogenide glass-like semiconductors

Info

Publication number
MD4276B1
MD4276B1 MDA20120104A MD20120104A MD4276B1 MD 4276 B1 MD4276 B1 MD 4276B1 MD A20120104 A MDA20120104 A MD A20120104A MD 20120104 A MD20120104 A MD 20120104A MD 4276 B1 MD4276 B1 MD 4276B1
Authority
MD
Moldova
Prior art keywords
chalcogenide glass
production
semiconductors
thin layers
sleeves
Prior art date
Application number
MDA20120104A
Other languages
Moldavian (mo)
Romanian (ro)
Other versions
MD4276C1 (en
Inventor
Vladimir Prilepov
Alexei Ciornii
Arcadi CHIRITA
Oleg Corsac
Tatiana Bulimaga
Nadejda Nasedchina
Original Assignee
Univ De Stat Din Moldova
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ De Stat Din Moldova filed Critical Univ De Stat Din Moldova
Priority to MDA20120104A priority Critical patent/MD4276C1/en
Publication of MD4276B1 publication Critical patent/MD4276B1/en
Publication of MD4276C1 publication Critical patent/MD4276C1/en

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Abstract

The invention relates to installations for the production of homogeneous thin layers of chalcogenide glass-like semiconductors and can be used in the creation of photosensitive layers for electrophotography and of the photothermoplastic carrier for recording of optical information.The installation for the production of thin layers of chalcogenide glass-like semiconductors includes a metering device (1), under which is placed a trough (2), in the lower part of which is placed an evaporator (3), above which is placed a lavsan band-driving mechanism (4) with condensation zone. The metering device (1) comprises a hopper for chalcogenide glass-like semiconductor powder, fixed to the housing of the metering device by means of a guide, wherein are made nine through holes. The housing consists of two half-sleeves, in each of which are formed nine through holes. The half-sleeves are interconnected and fixed onto a support by means of spring-loaded bolts. Between the half-sleeves is placed a shaft, wherein are made nine through holes with equal volume, displaced relative to each other by 20° along the shaft.
MDA20120104A 2012-11-13 2012-11-13 Installation for the production of thin layers of chalcogenide glass-like semiconductors MD4276C1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MDA20120104A MD4276C1 (en) 2012-11-13 2012-11-13 Installation for the production of thin layers of chalcogenide glass-like semiconductors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MDA20120104A MD4276C1 (en) 2012-11-13 2012-11-13 Installation for the production of thin layers of chalcogenide glass-like semiconductors

Publications (2)

Publication Number Publication Date
MD4276B1 true MD4276B1 (en) 2014-02-28
MD4276C1 MD4276C1 (en) 2014-09-30

Family

ID=50231647

Family Applications (1)

Application Number Title Priority Date Filing Date
MDA20120104A MD4276C1 (en) 2012-11-13 2012-11-13 Installation for the production of thin layers of chalcogenide glass-like semiconductors

Country Status (1)

Country Link
MD (1) MD4276C1 (en)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU370278A1 (en) * 1970-10-23 1973-02-15 METHOD OF OBTAINING PHOTO-SENSITIVE LAYERS
IL119719A0 (en) * 1996-11-29 1997-02-18 Yeda Res & Dev Inorganic fullerene-like structures of metal chalcogenides
JP3944946B2 (en) * 1997-04-25 2007-07-18 株式会社島津製作所 Thin film forming equipment
WO2013149572A1 (en) * 2012-04-02 2013-10-10 Xu Mingsheng Equipment for large-scale continuous preparation of two-dimensional nanometer thin film

Also Published As

Publication number Publication date
MD4276C1 (en) 2014-09-30

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Legal Events

Date Code Title Description
FG4A Patent for invention issued
KA4A Patent for invention lapsed due to non-payment of fees (with right of restoration)
MM4A Patent for invention definitely lapsed due to non-payment of fees