MD4276C1 - Instalaţie pentru obţinerea straturilor subţiri de semiconductori calcogenici vitroşi - Google Patents

Instalaţie pentru obţinerea straturilor subţiri de semiconductori calcogenici vitroşi

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Publication number
MD4276C1
MD4276C1 MDA20120104A MD20120104A MD4276C1 MD 4276 C1 MD4276 C1 MD 4276C1 MD A20120104 A MDA20120104 A MD A20120104A MD 20120104 A MD20120104 A MD 20120104A MD 4276 C1 MD4276 C1 MD 4276C1
Authority
MD
Moldova
Prior art keywords
chalcogenide glass
production
semiconductors
thin layers
sleeves
Prior art date
Application number
MDA20120104A
Other languages
English (en)
Russian (ru)
Other versions
MD4276B1 (ro
Inventor
Владимир ПРИЛЕПОВ
Алексей ЧЁРНЫЙ
Аркадий КИРИЦА
Олег КОРШАК
Татьяна БУЛЬМАГА
Надежда НАСЕДКИНА
Original Assignee
Государственный Университет Молд0
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Государственный Университет Молд0 filed Critical Государственный Университет Молд0
Priority to MDA20120104A priority Critical patent/MD4276C1/ro
Publication of MD4276B1 publication Critical patent/MD4276B1/ro
Publication of MD4276C1 publication Critical patent/MD4276C1/ro

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Abstract

Invenţia se referă la instalaţii pentru obţinerea straturilor subţiri omogene de semiconductori calcogenici vitroşi şi poate fi utilizată la crearea straturilor fotosensibile pentru electrofotografie şi a purtătorului fototermoplastic pentru înregistrarea informaţiei optice.Instalaţia pentru obţinerea straturilor subţiri de semiconductori calcogenici vitroşi include un dispozitiv de dozare (1), sub care este plasat un jgheab (2), în partea inferioară a căruia este plasat un evaporator (3), deasupra căruia este plasat un mecanism de derulare (4) a benzii de lavsan cu zonă de condensare. Dispozitivul de dozare (1) conţine un buncăr pentru praful de semiconductor calcogenic vitros, fixat de corpul dozatorului cu ajutorul unui ghidaj, în care sunt executate nouă găuri străpunse. Corpul este format din două semibucşe, în fiecare dintre acestea fiind executate câte nouă găuri străpunse. Semibucşele sunt unite între ele şi fixate pe un reazem prin intermediul unor şuruburi cu arc. Între semibucşe este amplasat un arbore, în care sunt executate nouă găuri străpunse cu volum egal, deplasate una faţă de alta la 20° de-a lungul arborelui.
MDA20120104A 2012-11-13 2012-11-13 Instalaţie pentru obţinerea straturilor subţiri de semiconductori calcogenici vitroşi MD4276C1 (ro)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MDA20120104A MD4276C1 (ro) 2012-11-13 2012-11-13 Instalaţie pentru obţinerea straturilor subţiri de semiconductori calcogenici vitroşi

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MDA20120104A MD4276C1 (ro) 2012-11-13 2012-11-13 Instalaţie pentru obţinerea straturilor subţiri de semiconductori calcogenici vitroşi

Publications (2)

Publication Number Publication Date
MD4276B1 MD4276B1 (ro) 2014-02-28
MD4276C1 true MD4276C1 (ro) 2014-09-30

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Family Applications (1)

Application Number Title Priority Date Filing Date
MDA20120104A MD4276C1 (ro) 2012-11-13 2012-11-13 Instalaţie pentru obţinerea straturilor subţiri de semiconductori calcogenici vitroşi

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MD (1) MD4276C1 (ro)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU370278A1 (ru) * 1970-10-23 1973-02-15 Способ получения фоточувствительпых слоев
US6027621A (en) * 1997-04-25 2000-02-22 Shimadzu Corporation Thin film forming apparatus
RU2194807C2 (ru) * 1996-11-29 2002-12-20 Йеда Рисерч Энд Дивелопмент Ко., Лтд. Способ изготовления наночастиц или нитевидных нанокристаллов, способ изготовления неорганических фуллереноподобных структур халькогенида металла, неорганические фуллереноподобные структуры халькогенида металла, стабильная суспензия if-структур халькогенида металла, способ изготовления тонких пленок из if-структур халькогенида металла и тонкая пленка, полученная таким способом, и насадка для растрового микроскопа
WO2013149572A1 (zh) * 2012-04-02 2013-10-10 Xu Mingsheng 规模化连续制备二维纳米薄膜的装备

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU370278A1 (ru) * 1970-10-23 1973-02-15 Способ получения фоточувствительпых слоев
RU2194807C2 (ru) * 1996-11-29 2002-12-20 Йеда Рисерч Энд Дивелопмент Ко., Лтд. Способ изготовления наночастиц или нитевидных нанокристаллов, способ изготовления неорганических фуллереноподобных структур халькогенида металла, неорганические фуллереноподобные структуры халькогенида металла, стабильная суспензия if-структур халькогенида металла, способ изготовления тонких пленок из if-структур халькогенида металла и тонкая пленка, полученная таким способом, и насадка для растрового микроскопа
US6027621A (en) * 1997-04-25 2000-02-22 Shimadzu Corporation Thin film forming apparatus
WO2013149572A1 (zh) * 2012-04-02 2013-10-10 Xu Mingsheng 规模化连续制备二维纳米薄膜的装备

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Майсел Л., Глэнг Р. Технология тонких пленок, Справочник, Москва, 1977, т. 1, с. 125-133 *

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