MD2154C2 - Газовый датчик - Google Patents

Газовый датчик Download PDF

Info

Publication number
MD2154C2
MD2154C2 MDA20010362A MD20010362A MD2154C2 MD 2154 C2 MD2154 C2 MD 2154C2 MD A20010362 A MDA20010362 A MD A20010362A MD 20010362 A MD20010362 A MD 20010362A MD 2154 C2 MD2154 C2 MD 2154C2
Authority
MD
Moldova
Prior art keywords
gas sensor
ohmic contacts
active layer
resistive layer
layer
Prior art date
Application number
MDA20010362A
Other languages
English (en)
Romanian (ro)
Other versions
MD2154B1 (en
Inventor
Валериан ДОРОГАН
Генадий КОРОТЧЕНКОВ
Татьяна ВИЕРУ
Ион ПРОДАН
Original Assignee
Валериан ДОРОГАН
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Валериан ДОРОГАН filed Critical Валериан ДОРОГАН
Priority to MDA20010362A priority Critical patent/MD2154C2/ru
Publication of MD2154B1 publication Critical patent/MD2154B1/xx
Publication of MD2154C2 publication Critical patent/MD2154C2/ru

Links

Landscapes

  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)

Abstract

Изобретение относится к газовым датчикам на основе металлооксидных пленок (SnO2, In2O3 и т. д.) которые могут быть использованы для контроля окружающей среды, в противопожарных системах и т. д.Газовый датчик включает изоляционную подложку, активный слой, резистивный слой с омическими контактами. Резистивный слой имеет не менее двух областей с разными сопротивлениями, а на активном слое выполняются не менее двух пар омических контактов.Ï. ôîðìóëû: 1Ôèã.: 1
MDA20010362A 2001-11-07 2001-11-07 Газовый датчик MD2154C2 (ru)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MDA20010362A MD2154C2 (ru) 2001-11-07 2001-11-07 Газовый датчик

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MDA20010362A MD2154C2 (ru) 2001-11-07 2001-11-07 Газовый датчик

Publications (2)

Publication Number Publication Date
MD2154B1 MD2154B1 (en) 2003-04-30
MD2154C2 true MD2154C2 (ru) 2003-10-31

Family

ID=19739989

Family Applications (1)

Application Number Title Priority Date Filing Date
MDA20010362A MD2154C2 (ru) 2001-11-07 2001-11-07 Газовый датчик

Country Status (1)

Country Link
MD (1) MD2154C2 (ru)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD4347C1 (ru) * 2014-07-15 2015-11-30 Виорел ТРОФИМ Газовый сенсор на основе MoO3

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD4423C1 (ru) * 2015-01-13 2016-12-31 Василе ПОСТИКА Газовый сенсор на основе полупроводниковых оксидов (варианты)

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
G. S. Korotchenkov, S. V. Dmitriev, V. I. Brynzari. Processes development for low cost and low power consuming SnO2 thin film gas sensor. International Journal Devoted to Research and Development of Physical and Chemical Transducers. Sensors and Actuators, B 54, 1999, p. 202-209 *
G. S. Korotchenkov, S. V. Dmitriev, V. I. Brynzari. Processes development for low power consuming SnO2 thin film gas sensor. *
International Journal Devoted to Research and Development of Physical and Chemical Transducers. Sensors and Actuators, B 54, *
Michael S. Shur, M. Asif Khan. GaAs/AlGaN Heterostructure Devices: Phodetectors and Field -Effect Transistors. MRS BULLETIN, February *
Michael S. Shur, M. Asif Khan. GaAs/AlGaN Heterostructure Devices: Phodetectors and Field –Effect Transistors. MRS BULLETIN, February 1997, p. 44-50 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD4347C1 (ru) * 2014-07-15 2015-11-30 Виорел ТРОФИМ Газовый сенсор на основе MoO3

Also Published As

Publication number Publication date
MD2154B1 (en) 2003-04-30

Similar Documents

Publication Publication Date Title
TWI319857B (en) A touch sensitive display and a portable device comprising the same
AU2002221783A1 (en) Cation-conducting or proton-conducting ceramic membrane infiltrated with an ionic liquid, method for the production thereof and use of the same
AU1667899A (en) Training device
SE0102426D0 (sv) Fuktsensor
WO2004112448A3 (en) Sensor for capacitive touch pad pointing device
EP1262767A3 (en) Humidity sensor
ATE459104T1 (de) Elektronische vorrichtungen mit acen-thiophen- copolymeren mit silylethynylgruppen
WO2008014107A3 (en) User interface substrate for handset device
WO2004066194A8 (en) Improved sensing arrangement
DE60236313D1 (de) Berührungssensor mit integrierter dekoration
CA2435735A1 (en) Triggered response compositions
WO2008152688A1 (ja) 通信端末装置
TW200724881A (en) Circuit board monitoring system
ITTO20030318A1 (it) Dispositivo sensore di gas a film sottile semiconduttore.
MX2010000674A (es) Dispositivo resistivo de capas de pelicula gruesa que emplea una cinta dielectrica.
WO2001013087A3 (en) Sensors and sensor arrays of conducting and insulating composites and methods of use thereof
MD2154C2 (ru) Газовый датчик
ATE338947T1 (de) Potentiometrische, ionenselektive elektrode
WO2006005332A3 (de) Festelektrolyt-gassenor mit heizelement
WO2007121053A3 (en) Open neutral detection circuit
DE602004030658D1 (de) Elektrochemischer sensor mit verbesserter ansprechzeit
MD3018G2 (ru) Газовый сенсор
MD2220C2 (ru) Гетеропереходный датчик токсических газов
MD3086G2 (ru) Полупроводниковый газовый сенсор
WO2000045066A8 (de) Sensor zur kontinuierlichen messung von reibungsverschleiss