MD2154C2 - Gas sensor - Google Patents

Gas sensor Download PDF

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Publication number
MD2154C2
MD2154C2 MDA20010362A MD20010362A MD2154C2 MD 2154 C2 MD2154 C2 MD 2154C2 MD A20010362 A MDA20010362 A MD A20010362A MD 20010362 A MD20010362 A MD 20010362A MD 2154 C2 MD2154 C2 MD 2154C2
Authority
MD
Moldova
Prior art keywords
gas sensor
ohmic contacts
active layer
resistive layer
layer
Prior art date
Application number
MDA20010362A
Other languages
Romanian (ro)
Russian (ru)
Other versions
MD2154B1 (en
Inventor
Валериан ДОРОГАН
Генадий КОРОТЧЕНКОВ
Татьяна ВИЕРУ
Ион ПРОДАН
Original Assignee
Валериан ДОРОГАН
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Валериан ДОРОГАН filed Critical Валериан ДОРОГАН
Priority to MDA20010362A priority Critical patent/MD2154C2/en
Publication of MD2154B1 publication Critical patent/MD2154B1/en
Publication of MD2154C2 publication Critical patent/MD2154C2/en

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  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)

Abstract

The invention relates to gas sensors on base of metal-oxide films (SnO2, In2O3, etc.), which may be used for environmental control, in the fire-extinguishing systems etc.The gas sensor includes an insulating substrate, an active layer, a resistive layer with ohmic contacts. The resistive layer has two or more regions with different resistances, and on the active layer there are made two or more pairs of ohmic contacts.
MDA20010362A 2001-11-07 2001-11-07 Gas sensor MD2154C2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MDA20010362A MD2154C2 (en) 2001-11-07 2001-11-07 Gas sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MDA20010362A MD2154C2 (en) 2001-11-07 2001-11-07 Gas sensor

Publications (2)

Publication Number Publication Date
MD2154B1 MD2154B1 (en) 2003-04-30
MD2154C2 true MD2154C2 (en) 2003-10-31

Family

ID=19739989

Family Applications (1)

Application Number Title Priority Date Filing Date
MDA20010362A MD2154C2 (en) 2001-11-07 2001-11-07 Gas sensor

Country Status (1)

Country Link
MD (1) MD2154C2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD4347C1 (en) * 2014-07-15 2015-11-30 Виорел ТРОФИМ Gas sensor based on MoO3

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD4423C1 (en) * 2015-01-13 2016-12-31 Василе ПОСТИКА Gas sensor based on semiconductor oxides (embodiments)

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
G. S. Korotchenkov, S. V. Dmitriev, V. I. Brynzari. Processes development for low cost and low power consuming SnO2 thin film gas sensor. International Journal Devoted to Research and Development of Physical and Chemical Transducers. Sensors and Actuators, B 54, 1999, p. 202-209 *
G. S. Korotchenkov, S. V. Dmitriev, V. I. Brynzari. Processes development for low power consuming SnO2 thin film gas sensor. *
International Journal Devoted to Research and Development of Physical and Chemical Transducers. Sensors and Actuators, B 54, *
Michael S. Shur, M. Asif Khan. GaAs/AlGaN Heterostructure Devices: Phodetectors and Field -Effect Transistors. MRS BULLETIN, February *
Michael S. Shur, M. Asif Khan. GaAs/AlGaN Heterostructure Devices: Phodetectors and Field –Effect Transistors. MRS BULLETIN, February 1997, p. 44-50 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD4347C1 (en) * 2014-07-15 2015-11-30 Виорел ТРОФИМ Gas sensor based on MoO3

Also Published As

Publication number Publication date
MD2154B1 (en) 2003-04-30

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