MD2154C2 - Gas sensor - Google Patents
Gas sensor Download PDFInfo
- Publication number
- MD2154C2 MD2154C2 MDA20010362A MD20010362A MD2154C2 MD 2154 C2 MD2154 C2 MD 2154C2 MD A20010362 A MDA20010362 A MD A20010362A MD 20010362 A MD20010362 A MD 20010362A MD 2154 C2 MD2154 C2 MD 2154C2
- Authority
- MD
- Moldova
- Prior art keywords
- gas sensor
- ohmic contacts
- active layer
- resistive layer
- layer
- Prior art date
Links
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 2
- 230000007613 environmental effect Effects 0.000 abstract 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 abstract 1
- 229910044991 metal oxide Inorganic materials 0.000 abstract 1
- 150000004706 metal oxides Chemical class 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Landscapes
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Abstract
The invention relates to gas sensors on base of metal-oxide films (SnO2, In2O3, etc.), which may be used for environmental control, in the fire-extinguishing systems etc.The gas sensor includes an insulating substrate, an active layer, a resistive layer with ohmic contacts. The resistive layer has two or more regions with different resistances, and on the active layer there are made two or more pairs of ohmic contacts.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MDA20010362A MD2154C2 (en) | 2001-11-07 | 2001-11-07 | Gas sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MDA20010362A MD2154C2 (en) | 2001-11-07 | 2001-11-07 | Gas sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| MD2154B1 MD2154B1 (en) | 2003-04-30 |
| MD2154C2 true MD2154C2 (en) | 2003-10-31 |
Family
ID=19739989
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MDA20010362A MD2154C2 (en) | 2001-11-07 | 2001-11-07 | Gas sensor |
Country Status (1)
| Country | Link |
|---|---|
| MD (1) | MD2154C2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MD4347C1 (en) * | 2014-07-15 | 2015-11-30 | Виорел ТРОФИМ | Gas sensor based on MoO3 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MD4423C1 (en) * | 2015-01-13 | 2016-12-31 | Василе ПОСТИКА | Gas sensor based on semiconductor oxides (embodiments) |
-
2001
- 2001-11-07 MD MDA20010362A patent/MD2154C2/en unknown
Non-Patent Citations (5)
| Title |
|---|
| G. S. Korotchenkov, S. V. Dmitriev, V. I. Brynzari. Processes development for low cost and low power consuming SnO2 thin film gas sensor. International Journal Devoted to Research and Development of Physical and Chemical Transducers. Sensors and Actuators, B 54, 1999, p. 202-209 * |
| G. S. Korotchenkov, S. V. Dmitriev, V. I. Brynzari. Processes development for low power consuming SnO2 thin film gas sensor. * |
| International Journal Devoted to Research and Development of Physical and Chemical Transducers. Sensors and Actuators, B 54, * |
| Michael S. Shur, M. Asif Khan. GaAs/AlGaN Heterostructure Devices: Phodetectors and Field -Effect Transistors. MRS BULLETIN, February * |
| Michael S. Shur, M. Asif Khan. GaAs/AlGaN Heterostructure Devices: Phodetectors and Field –Effect Transistors. MRS BULLETIN, February 1997, p. 44-50 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MD4347C1 (en) * | 2014-07-15 | 2015-11-30 | Виорел ТРОФИМ | Gas sensor based on MoO3 |
Also Published As
| Publication number | Publication date |
|---|---|
| MD2154B1 (en) | 2003-04-30 |
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