MD152Y - Process for the formation of a three-dimensional microstructure - Google Patents
Process for the formation of a three-dimensional microstructure Download PDFInfo
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- MD152Y MD152Y MDS20090031A MDS20090031A MD152Y MD 152 Y MD152 Y MD 152Y MD S20090031 A MDS20090031 A MD S20090031A MD S20090031 A MDS20090031 A MD S20090031A MD 152 Y MD152 Y MD 152Y
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- 238000000034 method Methods 0.000 title claims abstract description 28
- 230000015572 biosynthetic process Effects 0.000 title description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 31
- 239000000126 substance Substances 0.000 claims abstract description 20
- 239000002131 composite material Substances 0.000 claims abstract description 10
- 238000000151 deposition Methods 0.000 claims description 5
- 238000003486 chemical etching Methods 0.000 claims description 2
- 230000008021 deposition Effects 0.000 abstract description 4
- 238000004377 microelectronic Methods 0.000 abstract description 2
- 238000005554 pickling Methods 0.000 abstract 1
- 238000002360 preparation method Methods 0.000 abstract 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 11
- 238000005530 etching Methods 0.000 description 6
- 239000006185 dispersion Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000002253 acid Substances 0.000 description 2
- 230000008030 elimination Effects 0.000 description 2
- 238000003379 elimination reaction Methods 0.000 description 2
- 238000007373 indentation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011265 semifinished product Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
Inventia se refera la un procedeu de formare a unei microstructuri tridimensionale prin modificarea conform imaginii date a proprietatilor substantei semifabricatului initial in sectoarele prelucrate si poate fi utilizata in microelectronica la prepararea celulelor solare, mijloacelor de pastrare a informatiei. Procedeul de formare a unei microstructuri tridimensionale include depunerea pe un suport de Si a unui strat de lucru de substanta cu structura compozita ITO si prelucrarea structurii obtinute prin microindentare cu sarcini in limitele 0,01…0,50 N cu inlaturarea ulterioara a sectoarelor deformate prin intermediul decaparii chimice cu acid fluorhidric concentrat.The invention refers to a process of forming a three-dimensional microstructure by modifying according to the given image the properties of the initial semi-finished substance in the processed sectors and can be used in microelectronics for the preparation of solar cells, means of storing information. The process of forming a three-dimensional microstructure includes the deposition on a Si support of a working layer of ITO composite structure substance and the processing of the structure obtained by microindentation with loads within 0.01...0.50 N with the subsequent removal of the deformed sectors by through chemical pickling with concentrated hydrofluoric acid.
Description
Invenţia se referă la un procedeu de formare a unei microstructuri tridimensionale prin modificarea conform imaginii date a proprietăţilor substanţei semifabricatului iniţial în sectoarele prelucrate şi poate fi utilizată în microelectronică la prepararea celulelor solare, mijloacelor de păstrare a informaţiei. The invention relates to a process for forming a three-dimensional microstructure by modifying, according to the given image, the properties of the substance of the initial semi-finished product in the processed sectors and can be used in microelectronics for preparing solar cells and information storage means.
Este cunoscut procedeul de creare a structurilor tridimensionale. Esenţa procedeului constă în aceea că prin doparea ionică a solidelor concomitentă sau consecutivă, totodată, prin tratarea cu ioni de gaz inert în obiect se formează nanopori de gaz cu umplerea concomitentă sau consecutivă a volumului lor cu ioni ai elementelor de fază nativă [1]. The process of creating three-dimensional structures is known. The essence of the process is that by simultaneous or consecutive ionic doping of solids, at the same time, by treating the object with inert gas ions, gas nanopores are formed with simultaneous or consecutive filling of their volume with ions of the native phase elements [1].
Dezavantajul procedeului cunoscut constă în aceea că fazele menţionate se formează haotic în materialul prelucrat, fără distribuirea lor determinată din start, ceea ce limitează sfera aplicării lor practice. The disadvantage of the known process is that the mentioned phases are formed chaotically in the processed material, without their distribution determined from the start, which limits the scope of their practical application.
Mai este cunoscut procedeul de preparare a imaginii conductibile în volumul straturilor fine cu grosimea de 20 nm prin extragerea atomilor nemetalici sub acţiunea unui fascicul de particule încărcate [2]. Dezavantajul procedeului cunoscut constă în aceea că nu este posibil de obţinut structuri voluminoase cu grosimea (adâncimea) mai mare decât ~ 100 nm, inclusiv multistrat. Pentru majorarea densităţii amplasării elementelor de structuri paternate la grosimi mai mari ale straturilor prelucrate este necesar de a alege o astfel de energie pentru ca înălţimea gâtului (gurii) retortei de dispersie să coincidă cu grosimea straturilor prelucrate pentru a se evita unirea elementelor învecinate ale structurii conductibile la atingerea pereţilor retortei de dispersie. Gâtul retortei de dispersie în acest procedeu poate avea o altitudine mică datorită grosimii mici a straturilor prelucrate. Simpla majorare a energiei particulelor care ar putea să alungească gâtul retortei de dispersie (şi prin aceasta să majoreze grosimea straturilor prelucrate fără micşorarea densităţii atinse a structurilor formate paternate şi fără modificarea condiţiilor de realizare a procedeului duce la dispariţia materialului în zonele supuse iradierii, cea ce poate fi explicat prin influenţa unor procese care au loc la iradiere (spre exemplu, tratament ionoreactiv, pulverizarea fizică). Afară de aceasta în cazul dat apar mari probleme la evacuarea căldurii pentru menţinerea temperaturii admisibile a mostrelor în procesul de iradiere. There is also a known method for preparing a conductive image in the volume of thin layers with a thickness of 20 nm by extracting non-metallic atoms under the action of a charged particle beam [2]. The disadvantage of the known method is that it is not possible to obtain voluminous structures with a thickness (depth) greater than ~ 100 nm, including multilayer. To increase the density of the arrangement of patterned structure elements at larger thicknesses of the processed layers, it is necessary to choose such an energy so that the height of the neck (mouth) of the dispersion retort coincides with the thickness of the processed layers in order to avoid the joining of neighboring elements of the conductive structure when touching the walls of the dispersion retort. The neck of the dispersion retort in this method may have a small height due to the small thickness of the processed layers. The simple increase in particle energy that could lengthen the neck of the dispersion retort (and thereby increase the thickness of the processed layers without decreasing the achieved density of the formed patterned structures and without changing the conditions of the process leads to the disappearance of the material in the areas subjected to irradiation, which can be explained by the influence of some processes that occur during irradiation (for example, ionoreactive treatment, physical sputtering). In addition, in this case, major problems arise in the evacuation of heat to maintain the admissible temperature of the samples during the irradiation process.
Cel mai apropiat de procedeul propus după esenţa tehnică şi rezultatul obţinut este procedeul de creare a structurii voluminoase, care include depunerea pe substrat a unuia sau mai multor straturi de lucru din combinaţii de două sau multe straturi de lucru din compuşi biatomici sau multiatomici, iradierea lor ulterioară prin mască sau şablon cu un fascicul de particule accelerate, care asigură eliminarea selectivă a atomilor de un anumit tip de pe sectoarele iradiate însoţită de modificarea proprietăţilor substanţei, totodată deasupra stratului de lucru se aplică un strat suplimentar de substanţă, afinitatea chimică a căruia la atomii eliminaţi din stratul de lucru este mai mică decât la atomii care nu au fost eliminaţi din stratul de lucru [3]. The closest to the proposed process in terms of technical essence and the result obtained is the process of creating a voluminous structure, which includes the deposition on the substrate of one or more working layers from combinations of two or more working layers of diatomic or multiatomic compounds, their subsequent irradiation through a mask or template with a beam of accelerated particles, which ensures the selective elimination of atoms of a certain type from the irradiated sectors accompanied by a change in the properties of the substance, at the same time, an additional layer of substance is applied above the working layer, the chemical affinity of which to the atoms eliminated from the working layer is lower than to the atoms that were not eliminated from the working layer [3].
Dezavantajul procedeului cunoscut constă în complexitatea lui şi absorbţia înaltă de energie, totodată procedeul nu permite de a obţine un relief bine conturat al imaginii şi de a dirija arhitectura structurii voluminoase. The disadvantage of the known process lies in its complexity and high energy absorption, at the same time the process does not allow to obtain a well-defined relief of the image and to direct the architecture of the voluminous structure.
Problema pe care o rezolvă invenţia propusă constă în majorarea gradului de reliefare a imaginii structurii tridimensionale după schema stabilită din start, facilitarea şi ieftinirea procesului de obţinere a desenului în volumul straturilor cu grosimea de 100…700 nm şi posibilitatea dirijării dimensiunilor şi a proprietăţilor structurilor obţinute. The problem solved by the proposed invention consists in increasing the degree of relief of the image of the three-dimensional structure according to the scheme established from the start, facilitating and reducing the cost of the process of obtaining the drawing in the volume of layers with a thickness of 100…700 nm and the possibility of controlling the dimensions and properties of the obtained structures.
Esenţa invenţiei constă în aceea că procedeul de formare a unei microstructuri tridimensionale include depunerea pe un suport de Si a unui strat de lucru de substanţă cu structură compozită ITO şi prelucrarea structurii obţinute prin microindentare cu sarcini în limitele 0,01…0,50 N cu înlăturarea ulterioară a sectoarelor deformate prin intermediul decapării chimice cu acid fluorhidric concentrat. The essence of the invention is that the process of forming a three-dimensional microstructure includes depositing on a Si support a working layer of a substance with an ITO composite structure and processing the structure obtained by microindentation with loads within the limits of 0.01…0.50 N with subsequent removal of deformed sectors by means of chemical etching with concentrated hydrofluoric acid.
Procedeul permite evitarea apariţiei efectelor legate de iradierea stratului de lucru şi contribuie la extinderea nomenclaturii tipurilor de compoziţii chimice utilizate în calitate de strat de lucru şi variaţia alegerii diferitor combinaţii „strat de lucru-substrat” ceea ce face posibilă aplicarea procedeului propus pentru crearea structurilor tridimensionale cu diferite destinaţii. Procedeul permite de a dirija arhitectura structurii tridimensionale obţinute datorită modificării grosimii stratului de lucru, timpului de tratament selectiv, mărimii sarcinii la prelucrarea mecanică a stratului şi datorită modificării desenului de prelucrare. The process allows to avoid the effects related to the irradiation of the working layer and contributes to the expansion of the nomenclature of the types of chemical compositions used as a working layer and the variation of the choice of different combinations "working layer-substrate", which makes it possible to apply the proposed process for creating three-dimensional structures with different purposes. The process allows to control the architecture of the three-dimensional structure obtained by changing the thickness of the working layer, the selective treatment time, the magnitude of the load during mechanical processing of the layer and by changing the processing design.
Rezultatul menţionat a fost obţinut la realizarea procedeului de formare a structurii tridimensionale, care include aplicarea pe un suport a unui strat de lucru şi prelucrarea ulterioară a structurii obţinute, ce permite înlăturarea selectivă a stratului în sectoarele prelucrate, pentru aceasta în calitate de suport este folosit Si, în calitate de strat de lucru este aplicat un strat de ITO (indium tin oxide), pentru prelucrarea stratului de lucru se aplică microindentarea structurii obţinute cu sarcini în limitele 0,01…0,5 N, iar eliminarea sectoarelor deformate este realizată prin tratament chimic cu acid fluorhidric concentrat (HF). The mentioned result was obtained when carrying out the process of forming the three-dimensional structure, which includes the application of a working layer on a support and the subsequent processing of the obtained structure, which allows the selective removal of the layer in the processed sectors, for this Si is used as a support, an ITO (indium tin oxide) layer is applied as a working layer, for the processing of the working layer, microindentation of the obtained structure is applied with loads within the limits of 0.01…0.5 N, and the elimination of the deformed sectors is achieved by chemical treatment with concentrated hydrofluoric acid (HF).
Rezultatul tehnic al procedeului propus constă în obţinerea structurii tridimensionale după schema planificată, forma şi dimensiunile căreia pot fi dirijate în funcţie de domeniul aplicării practice. Invenţia se explică prin desenele din fig. 1-4, care reprezintă: The technical result of the proposed process consists in obtaining the three-dimensional structure according to the planned scheme, the shape and dimensions of which can be directed depending on the field of practical application. The invention is explained by the drawings in Fig. 1-4, which represent:
- fig. 1, microstructura, spectrele şi compoziţia chimică a structurii ITO/Si în funcţie de distanţa de la suprafaţă (aspectul în secţiune): A,b - în interiorul stratului ITO; c,d - la o distanţă de la stratul ITO în volumul cristalului de Si; - Fig. 1, microstructure, spectra and chemical composition of the ITO/Si structure as a function of the distance from the surface (sectional view): A,b - inside the ITO layer; c,d - at a distance from the ITO layer in the volume of the Si crystal;
- fig. 2, amprente depuse cu diferite sarcini P, N: a - 0,15; b - 0,20; c - 0,50 x 800; - fig. 2, prints deposited with different loads P, N: a - 0.15; b - 0.20; c - 0.50 x 800;
- fig. 3, aspectul amprentelor depuse cu trei sarcini diferite şi zonele din jurul lor după tratamentul chimic timp de 2 min P, N: a - 0,01; b - 0,1; c - 0,4 x800; - fig. 3, appearance of the fingerprints deposited with three different loads and the areas around them after chemical treatment for 2 min P, N: a - 0.01; b - 0.1; c - 0.4 x800;
- fig. 4, structura tridimensională (a, b) în secţiune şi, respectiv, imaginea frontală a acestei figuri pe suprafaţa stratului ITO (c). P=0,1 N: (a) - relieful suprafeţei amprentei (d) şi zona din jurul ei până la tratamentul chimic (în secţiune), (b) - profilul zonei dizolvate (Df) după 4 min de tratament chimic selectiv cu acid fluorhidric concentrat (HF). Axa Y: nm. Linia suprafeţei de secţiune schematic este prezentată în inserţie; (c) - suprafaţa amprentei şi zona din jurul ei după tratamentul selectiv cu HF (imagine frontală). - fig. 4, three-dimensional structure (a, b) in section and, respectively, the front image of this figure on the surface of the ITO layer (c). P=0.1 N: (a) - relief of the imprint surface (d) and the area around it before chemical treatment (in section), (b) - profile of the dissolved area (Df) after 4 min of selective chemical treatment with concentrated hydrofluoric acid (HF). Y-axis: nm. The schematic line of the section surface is shown in the inset; (c) - imprint surface and the area around it after selective treatment with HF (front image).
Procedeul propus se realizează în felul următor. The proposed procedure is carried out in the following way.
La prima etapă se obţine structura planară TCO/Si (oxizi conductibili transparenţi). În calitate de TCO se folosesc pelicule de In2O3·SnO2 (ITO) cu grosimea de la 100 nm până la 700 nm care se depun pe substrat de Si. Structura de aşa fel poate fi clasată drept tip „dur-pe-dur”. In the first stage, a planar TCO/Si structure (transparent conductive oxides) is obtained. As TCO, In2O3·SnO2 (ITO) films with a thickness of 100 nm to 700 nm are used, which are deposited on a Si substrate. Such a structure can be classified as a “hard-on-hard” type.
După aceasta structura compozită se supune microindentării după metoda lui Vickers cu sarcini în limitele 0,01…0,5 N cu scopul de a crea amprente de duritate de diferite dimensiuni. After this, the composite structure is subjected to microindentation according to the Vickers method with loads within the limits of 0.01…0.5 N in order to create hardness impressions of different sizes.
Următoarea etapă este extragerea parţială a stratului ITO prin tratament chimic din zonele de deformare elastoplastică din jurul amprentelor utilizând acidul fluorhidric concentrat (HF). The next step is the partial extraction of the ITO layer by chemical treatment from the elastoplastic deformation areas around the prints using concentrated hydrofluoric acid (HF).
Rezultatul acţiunii acidului fluorhidric este crearea figurilor de gravură a stratului ITO. Forma şi dimensiunea figurilor de gravură pot fi dirijate prin schimbarea sarcinii la microindentare, duratei timpului de acţiune chimică şi modului de deformare după desenul planificat din start (depunerea amprentelor în serii după desenul dat, formarea zgârieturilor după o schemă anumită sau depunerea clişeului (matriţiei) de forma dorită). The result of the action of hydrofluoric acid is the creation of engraving patterns on the ITO layer. The shape and size of the engraving patterns can be controlled by changing the microindentation load, the duration of the chemical action time and the deformation mode according to the initially planned design (deposition of prints in series according to the given design, formation of scratches according to a specific scheme or deposition of the cliché (matrix) of the desired shape).
Exemple de realizare a procedeului Examples of process implementation
Exemplul 1 Example 1
Pe structura compozită obţinută de ITO/Si se depun amprente cu trei sarcini diferite: 0,1; 0,2 и 0,3 N, diagonalele cărora se măsoară. După aceasta structura compozită se supune tratamentului chimic cu aplicarea acidului fluorhidric concentrat (HF) timp de un minut, se spală cu apă distilată, apoi se măsoară diametrul figurilor de gravură. Raportul dimensiunilor diagonalelor amprentelor (d) şi diametrelor figurilor de gravură respective pentru timpul de acţiune de HF 1 min este prezentat în tabelul 1. On the obtained composite structure of ITO/Si, imprints with three different charges are deposited: 0.1; 0.2 and 0.3 N, the diagonals of which are measured. After this, the composite structure is subjected to chemical treatment with the application of concentrated hydrofluoric acid (HF) for one minute, washed with distilled water, then the diameter of the engraving figures is measured. The ratio of the dimensions of the diagonals of the imprints (d) and the diameters of the respective engraving figures for the HF action time of 1 min is presented in Table 1.
Tabelul 1 Table 1
Raportul dimensiunilor diagonalelor de amprente (d) şi diametrelor figurilor de gravură respective pentru timpul de acţiune de HF 1 min Ratio of the dimensions of the diagonals of the prints (d) and the diameters of the respective engraving figures for the HF action time of 1 min
P, N Diagonala amprentei, d, µm Diametrul figurii de gravură, Df, µm δ Df=Df-d 0,1 4,02 5,60 1,58 0,2 4,84 6,72 1,88 0,3 5,80 7,80 2,00P, N Diagonal of the imprint, d, µm Diameter of the engraving figure, Df, µm δ Df=Df-d 0.1 4.02 5.60 1.58 0.2 4.84 6.72 1.88 0.3 5.80 7.80 2.00
Exemplul 2 Example 2
Pe structura de compozit ITO/Si se depun amprente cu patru sarcini diferite: 0,1; 0,2; 0,3 şi 0,5 N, diagonalele cărora se măsoară. După aceasta structura compozită se supune tratamentului chimic cu acid fluorhidric concentrat (HF) timp de 1, 2, 4 şi 6 min, totodată pentru fiecare termen de tratament se măsoară diametrul figurilor de gravură şi se apreciază cinetica majorării diametrului figurilor de gravură odată cu majorarea duratei de tratament. Coeficienţii gradului de gravare al stratului ITO în funcţie de valoarea sarcinii aplicate (P) pentru diferite durate de gravare (τ) sunt prezentaţi în tabelul 2. On the ITO/Si composite structure, imprints with four different loads are deposited: 0.1; 0.2; 0.3 and 0.5 N, the diagonals of which are measured. After this, the composite structure is subjected to chemical treatment with concentrated hydrofluoric acid (HF) for 1, 2, 4 and 6 min, at the same time, for each treatment term, the diameter of the engraving figures is measured and the kinetics of the increase in the diameter of the engraving figures with increasing treatment duration is assessed. The etching degree coefficients of the ITO layer depending on the value of the applied load (P) for different etching durations (τ) are presented in Table 2.
Tabelul 2 Table 2
Modificarea coeficientului gradului de gravare a stratului ITO în funcţie de valoarea sarcinii aplicate (P) pentru diferite durate de gravare (τ) Change in the etching rate coefficient of the ITO layer depending on the applied load value (P) for different etching times (τ)
P, N Diagonala amprentei, d, µm k = Df/d τ min→ 1 2 4 6 0,1 4,02 1,39 6,68 21,2 32,9 0,2 4,84 1,39 6,01 18,9 27,8 0,3 5,80 1,34 5,21 15,9 23,9 0,5 8,06 1,39 4,58 10,3 16,7 P, N Imprint diagonal, d, µm k = Df/d τ min→ 1 2 4 6 0.1 4.02 1.39 6.68 21.2 32.9 0.2 4.84 1.39 6.01 18.9 27.8 0.3 5.80 1.34 5.21 15.9 23.9 0.5 8.06 1.39 4.58 10.3 16.7
Exemplul 3 Example 3
Pe structura de compozit ITO/Si se depun amprente cu şapte sarcini diferite: 0,01; 0,03; 0,05; 0,1; 0,2; 0,3 şi 0,5 N. Pentru sarcini mai mici (0,01; 0,03; 0,05 N) amprentele sunt atât de mici, încât nu pot fi măsurate chiar la mărirea de 800x a microscopului optic. Ulterior structura compozită este supusă tratamentului chimic cu acid fluorhidric concentrat (HF) timp de 1, 2, 4 şi 6 min, totodată pentru fiecare termen de tratament se măsoară diametrul figurilor de gravură obţinute, cu excepţia amprentei depuse cu 0,01 N (τ=1 min), pentru care figura se evidenţiază începând cu timpul de tratament 2 min. Modificarea dimensiunii figurilor de gravură a stratului ITO din jurul amprentelor de duritate în funcţie de timpul acţiunii acidului concentrat HF (τ) pentru diferite valori ale sarcinii aplicate (P) este prezentată în tabelul 3. On the ITO/Si composite structure, imprints are deposited with seven different loads: 0.01; 0.03; 0.05; 0.1; 0.2; 0.3 and 0.5 N. For lower loads (0.01; 0.03; 0.05 N) the imprints are so small that they cannot be measured even at the 800x magnification of the optical microscope. Subsequently, the composite structure is subjected to chemical treatment with concentrated hydrofluoric acid (HF) for 1, 2, 4 and 6 min, while for each treatment term the diameter of the obtained engraving figures is measured, except for the imprint deposited with 0.01 N (τ=1 min), for which the figure is highlighted starting with the treatment time of 2 min. The change in the size of the etching figures of the ITO layer around the hardness indentations as a function of the action time of concentrated HF acid (τ) for different values of the applied load (P) is presented in Table 3.
Tabelul 3 Table 3
Modificarea dimensiunii figurilor de gravură a stratului ITO din jurul amprentelor de duritate în funcţie de timpul acţiunii acidului concentrat HF (τ) pentru diferite valori ale sarcinii aplicate (P) Change in the size of the etching figures of the ITO layer around the hardness indentations depending on the action time of concentrated HF acid (τ) for different values of the applied load (P)
Figurile comparate Durata tratamentului, τ, min P, N 0,01 0,03 0,05 00,1 0,2 0,3 0,5 Diagonala amprentei, d, µm 0 - - - 4,0 4,8 5,8 8,1 Dimensiunea figurilor de gravură, Df, µm 1 3,36 4,50 5,60 6,72 7,80 11,21 2 20,16 21,28 24,64 26,88 29,12 30,24 36,96 4 85,12 85,12 76,16 85,12 91,84 92,08 82,88 6 129,90 129,90 132,10 132,10 134,40 138,80 134,40Compared figures Treatment duration, τ, min P, N 0.01 0.03 0.05 00.1 0.2 0.3 0.5 Diagonal of the imprint, d, µm 0 - - - 4.0 4.8 5.8 8.1 Size of the engraving figures, Df, µm 1 3.36 4.50 5.60 6.72 7.80 11.21 2 20.16 21.28 24.64 26.88 29.12 30.24 36.96 4 85.12 85.12 76.16 85.12 91.84 92.08 82.88 6 129.90 129.90 132.10 132.10 134.40 138.80 134.40
1. RU 2193080 C2 2002.11.20 1. RU 2193080 C2 2002.11.20
2. RU 2129320 C1 1999.04.20 2. RU 2129320 C1 1999.04.20
3. RU 2243613 C1 2004.12.27 3. RU 2243613 C1 2004.12.27
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| MDS20090031A MD152Z (en) | 2009-03-10 | 2009-03-10 | Process for the formation of a three-dimensional microstructure |
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| MDS20090031A MD152Z (en) | 2009-03-10 | 2009-03-10 | Process for the formation of a three-dimensional microstructure |
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|---|---|
| MD152Y true MD152Y (en) | 2010-02-26 |
| MD152Z MD152Z (en) | 2010-09-30 |
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| MDS20090031A MD152Z (en) | 2009-03-10 | 2009-03-10 | Process for the formation of a three-dimensional microstructure |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| RU2129320C1 (en) * | 1998-05-22 | 1999-04-20 | Гурович Борис Аронович | Conducting structure forming process |
| RU2193080C2 (en) * | 2000-04-05 | 2002-11-20 | Объединенный Институт Ядерных Исследований | Method of ion doping of solid bodies |
| RU2243613C1 (en) * | 2003-07-16 | 2004-12-27 | Гурович Борис Аронович | Method for bulk structure production |
| MD2556G2 (en) * | 2004-06-01 | 2005-03-31 | Ион ТИГИНЯНУ | Process for semiconductor nanostructures obtaining |
| MD2714G2 (en) * | 2004-10-19 | 2005-10-31 | Ион ТИГИНЯНУ | Process for obtaining porous semiconductor structures |
| RU2302054C1 (en) * | 2006-02-16 | 2007-06-27 | Борис Аронович Гурович | Method for producing spatial three-dimensional structure |
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