LU64616A1 - - Google Patents

Info

Publication number
LU64616A1
LU64616A1 LU64616DA LU64616A1 LU 64616 A1 LU64616 A1 LU 64616A1 LU 64616D A LU64616D A LU 64616DA LU 64616 A1 LU64616 A1 LU 64616A1
Authority
LU
Luxembourg
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of LU64616A1 publication Critical patent/LU64616A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses
LU64616D 1971-01-21 1972-01-19 LU64616A1 (cg-RX-API-DMAC7.html)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2102854A DE2102854C3 (de) 1971-01-21 1971-01-21 Verfahren zur Herstellung eines Festwertspeichers

Publications (1)

Publication Number Publication Date
LU64616A1 true LU64616A1 (cg-RX-API-DMAC7.html) 1972-06-26

Family

ID=5796572

Family Applications (1)

Application Number Title Priority Date Filing Date
LU64616D LU64616A1 (cg-RX-API-DMAC7.html) 1971-01-21 1972-01-19

Country Status (8)

Country Link
JP (1) JPS5716440B1 (cg-RX-API-DMAC7.html)
BE (1) BE778166A (cg-RX-API-DMAC7.html)
DE (1) DE2102854C3 (cg-RX-API-DMAC7.html)
FR (1) FR2122557B1 (cg-RX-API-DMAC7.html)
GB (1) GB1373996A (cg-RX-API-DMAC7.html)
IT (1) IT946699B (cg-RX-API-DMAC7.html)
LU (1) LU64616A1 (cg-RX-API-DMAC7.html)
NL (1) NL7115829A (cg-RX-API-DMAC7.html)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4064495A (en) * 1976-03-22 1977-12-20 General Electric Company Ion implanted archival memory media and methods for storage of data therein
DE3036869C2 (de) * 1979-10-01 1985-09-05 Hitachi, Ltd., Tokio/Tokyo Integrierte Halbleiterschaltung und Schaltkreisaktivierverfahren
US4476478A (en) * 1980-04-24 1984-10-09 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor read only memory and method of making the same
FR2551247B1 (fr) * 1983-08-23 1988-06-17 Rosencher Emmanuel Memoire integree non volatile reinscriptible, procede de fabrication de cette memoire et dispositif d'ecriture dans celle-ci

Also Published As

Publication number Publication date
BE778166A (fr) 1972-05-16
JPS5716440B1 (cg-RX-API-DMAC7.html) 1982-04-05
FR2122557A1 (cg-RX-API-DMAC7.html) 1972-09-01
DE2102854B2 (de) 1973-03-15
FR2122557B1 (cg-RX-API-DMAC7.html) 1976-07-09
NL7115829A (cg-RX-API-DMAC7.html) 1972-07-25
DE2102854A1 (de) 1972-08-03
GB1373996A (en) 1974-11-13
DE2102854C3 (de) 1973-10-11
IT946699B (it) 1973-05-21

Similar Documents

Publication Publication Date Title
FR2114926A5 (cg-RX-API-DMAC7.html)
CS158726B2 (cg-RX-API-DMAC7.html)
FR2123477A1 (cg-RX-API-DMAC7.html)
FR2125103A5 (cg-RX-API-DMAC7.html)
FR2121557B1 (cg-RX-API-DMAC7.html)
JPS5716440B1 (cg-RX-API-DMAC7.html)
FR2122538B1 (cg-RX-API-DMAC7.html)
FR2121592A1 (cg-RX-API-DMAC7.html)
FR2125548B1 (cg-RX-API-DMAC7.html)
DE2162553B2 (cg-RX-API-DMAC7.html)
FI53020B (cg-RX-API-DMAC7.html)
FR2124141A1 (cg-RX-API-DMAC7.html)
AU428077B2 (cg-RX-API-DMAC7.html)
FI50281B (cg-RX-API-DMAC7.html)
DK129221C (cg-RX-API-DMAC7.html)
CS149549B1 (cg-RX-API-DMAC7.html)
CS151995B1 (cg-RX-API-DMAC7.html)
CS160261B1 (cg-RX-API-DMAC7.html)
CS151830B1 (cg-RX-API-DMAC7.html)
CS149217B1 (cg-RX-API-DMAC7.html)
CH1406071A4 (cg-RX-API-DMAC7.html)
CH545271A4 (cg-RX-API-DMAC7.html)
CH563637A5 (cg-RX-API-DMAC7.html)
CH562117A5 (cg-RX-API-DMAC7.html)
BE766127R (cg-RX-API-DMAC7.html)