KR980011991A - Etch facility - Google Patents

Abstract

SUMMARY OF THE INVENTION The present invention is to provide an etch facility for improving wetting and eliminating the occurrence of frost attack without adding an ashing process. A step of transferring the wafer to and from the load section, a step of washing in the first rinsing section, a step of drying in the first drying section, a step of applying the photoresist on the wafer in the chemical section, a step of washing in the second rinsing section Drying in the second drying section, and unloading the wafer in the unloading section.

Description

Etch facility

FIG. 1 is a conventional etch equipment flow chart,

FIG. 2 is a flow diagram of an etch facility according to an embodiment of the present invention.

The present invention relates to an etch facility. More particularly, it relates to a facility for chemical wetting enhancement on wafers. Coating the photoresist on the top is similar to painting the walls since the surface treatment. Just as the surface must be clean and dry to make the paint stick well, the wafer must be clean and dry to get good photoresist.

A process problem due to poor photoresist adhesion is the undercut when etching. There are two directions, the lower side and the lateral direction, which remove the film during etching. The isotropic etch is that the etching proceeds in the same direction in both directions. When the photoresist is peeled off, the size of the etched pattern is widened. In severe cases, the pattern is changed. The causes of undercut and photoresist removal are poor process control, process environment, wafer surface, and photoresist form. Positive photoresist has worse adhesive properties than negative. Common semiconductor manufacturing process lines employ surface treatment processes to increase the adhesion of photoresist. Depending on the level of accuracy and technical capability required for the masking process, and the wafer masking step, the process order and process conditions of the company are different. However, particle-free surfaces, dry surfaces, and chemically treated surfaces are essential.

Diffusion, ion implantation, chemical vapor deposition and metallization processes usually precede masking steps. All processes are performed in a clean and dry environment. Usually, the wafer surface is in a state suitable for forming a photoresist layer. Except for wafers from highly contaminated reaction chambers, wafers with high doping, or wafers with layer formation. However, since the wafer must be transferred to the masking area, there is a high possibility that the wafer will be contaminated from air, containers or handling. The contamination in this case is usually not a chemical, but a particle.

In order to form a pattern for each layer, chemicals used in the etching process must be well wetted with a photoresist or the like on the glass substrate. This is because the photoresist must be properly applied to the area where it is exposed.

FIG. 1 is a flow diagram of a conventional etch facility.

As shown in FIG. 1, first, the wafer is moved to the rod section 10 and transferred, and then the photoresist is coated on the wafer in the next chemical section 12. Next, the wafer W is cleaned by the rinsing unit 14, dried by the drying unit 16, and then unloaded from the unloading unit 18. However, in the conventional deposition facility structure, the photoresist, which is the chemical part 12, is not well wetted on the wafer during the etching process on the glass substrate, and unetch easily occurs.

Therefore, an ashing process is added to eliminate the generation of free etch. Therefore, a cost is incurred by the addition of the etching process, and the productivity is lowered. SUMMARY OF THE INVENTION Accordingly, the present invention has been made keeping in mind the above problems occurring in the prior art, and an object thereof is to provide an etching facility for improving wetting and eliminating the occurrence of frost attack without adding an etching process.

In order to accomplish the above object, the present invention provides a method of manufacturing a semiconductor device, comprising: a step of moving a wafer to and from a load part, a step of cleaning the first rinsing part, a step of drying the first rinsing part, A step of washing in the second rinsing unit, a step of drying in the second drying unit, and a step of unloading the wafer in the unloading unit.

BRIEF DESCRIPTION OF THE DRAWINGS The above and other objects, features and advantages of the present invention will be more apparent from the following detailed description taken in conjunction with the accompanying drawings, in which: FIG. FIG. 2 is a flow diagram of an etch facility according to an embodiment of the present invention. As shown in FIG. 2, first, the wafer is moved to the rod section 100 and transferred. Next, the wafer is washed in the first rinse section 110, dried in the first dry section 120, And the photoresist is applied on the wafer in the portion 130. Next, the wafer is rinsed by the second rinsing unit 140, dried by the second drying unit 150, and then unloaded from the unloading unit 18. As described above, the visual system according to the embodiment of the present invention has an effect of improving the wetting due to introduction of the etchant rinse part.

Claims (1)

A step of transferring the wafer to and from the load section, a step of washing in the first rinsing section, a step of drying in the first drying section, a step of applying the photoresist on the wafer in the chemical section, a step of washing in the second rinsing section Drying in a second drying unit, and unloading a wafer in an unloading unit. ※ Note: It is disclosed by the contents of the first application.