JPH04142741A - Semiconductor manufacturing device - Google Patents
Semiconductor manufacturing deviceInfo
- Publication number
- JPH04142741A JPH04142741A JP26678590A JP26678590A JPH04142741A JP H04142741 A JPH04142741 A JP H04142741A JP 26678590 A JP26678590 A JP 26678590A JP 26678590 A JP26678590 A JP 26678590A JP H04142741 A JPH04142741 A JP H04142741A
- Authority
- JP
- Japan
- Prior art keywords
- tank
- wafer
- pure water
- mixed solution
- chemical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 24
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 29
- 239000000126 substance Substances 0.000 claims abstract description 17
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 16
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 14
- 238000011282 treatment Methods 0.000 claims abstract description 13
- 239000011259 mixed solution Substances 0.000 claims abstract description 10
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims abstract description 7
- 230000007246 mechanism Effects 0.000 claims abstract description 4
- 235000012431 wafers Nutrition 0.000 claims description 22
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 19
- 239000007788 liquid Substances 0.000 claims description 9
- 238000012545 processing Methods 0.000 claims description 8
- 238000012993 chemical processing Methods 0.000 claims description 5
- 239000000243 solution Substances 0.000 claims description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 1
- 239000002245 particle Substances 0.000 abstract description 21
- 238000005530 etching Methods 0.000 abstract description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 14
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 14
- 235000011114 ammonium hydroxide Nutrition 0.000 abstract description 8
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 5
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 abstract description 2
- 230000002950 deficient Effects 0.000 abstract description 2
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 abstract 2
- 238000001035 drying Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体ウェハーを薬液処理する半導体製造装置
に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a semiconductor manufacturing apparatus for chemically treating semiconductor wafers.
従来の半導体製造工程に使用する半導体ウェハー薬液処
理装置には、写真食刻工程において所望のパターンにシ
リコン酸化膜を弗酸と純水の混合液にてエツチングする
いわゆる酸化膜エツチグ装置がある。この従来技術にお
ける酸化膜エツチング装置は、第２図の縦断面図に示す
ように、シリコン酸化膜をエツチングする薬液処理槽１
である弗酸と純水の混合液槽と薬液処理槽１に連続した
純水リンス槽２で構成されていた。この際、半導体ウェ
ハー９を搭載したキャリア８は、自動キャリア搬送機構
１０により各々処理槽に搬送され、純水リンス処理後は
遠心乾燥機７に送られて乾燥処理されていた。Conventional semiconductor wafer chemical processing equipment used in semiconductor manufacturing processes includes a so-called oxide film etching equipment that etches a silicon oxide film into a desired pattern using a mixture of hydrofluoric acid and pure water in a photolithography process. As shown in the vertical cross-sectional view of FIG. 2, this conventional oxide film etching apparatus includes a chemical treatment tank 1 for etching a silicon oxide film.
It consisted of a mixed liquid tank of hydrofluoric acid and pure water, and a pure water rinsing tank 2 connected to a chemical treatment tank 1. At this time, the carriers 8 carrying the semiconductor wafers 9 were each transported to a processing tank by an automatic carrier transport mechanism 10, and after being rinsed with pure water, they were sent to a centrifugal dryer 7 for drying processing.
この従来の酸化膜エツチング装置では、シリコン半導体
ウェハーが薬液処理槽に持ち込んだパーティクルやエツ
チング中の反応生成物がウェハーに付着した場合、純水
リンス処理後のウェハー乾燥によってパーティクルがウ
ェハー表面に強く固着し、後工程のパーティクルを除去
するためのウェハー洗浄処理によっても除去が困難であ
った。In this conventional oxide film etching system, if particles brought into the chemical treatment bath by the silicon semiconductor wafer or reaction products during etching adhere to the wafer, the particles will strongly adhere to the wafer surface by drying the wafer after rinsing with pure water. However, it was difficult to remove particles even in a wafer cleaning process for removing particles in a post-process.
このなめ従来装置では、複数回の薬液処理を行なうシリ
コン半導体ウェハーに作成された半導体デバイスの歩留
りを不安定なものにしているという欠点があった。This conventional apparatus has the disadvantage that the yield of semiconductor devices fabricated on silicon semiconductor wafers, which are subjected to multiple chemical treatments, is unstable.
本発明のシリコン半導体ウェハーを薬液処理する半導体
製造装置は、シリコン酸化膜をエツチングする弗酸系の
混合液槽である薬液処理槽と薬液処理槽後の純水リンス
槽に連続し設けられた各々１槽以上の硫酸と過酸化水素
水の混合液槽と、純水リンス槽と、アンモニア水と過酸
化水素水と純水との混合液槽及び純水リンス槽とで構成
され、ウェハーを搭載したキャリアを各々の処理槽に自
動搬送する機構とを備えている。The semiconductor manufacturing apparatus of the present invention for chemically processing silicon semiconductor wafers includes a chemical processing tank, which is a hydrofluoric acid mixed liquid tank for etching a silicon oxide film, and a pure water rinsing tank after the chemical processing tank. Consists of one or more mixed liquid tanks of sulfuric acid and hydrogen peroxide, a pure water rinsing tank, a mixed liquid tank of ammonia water, hydrogen peroxide, and pure water, and a pure water rinsing tank, and wafers are mounted. The system is equipped with a mechanism that automatically transports the processed carriers to each processing tank.
ここで硫酸と過酸化水素水の混合液は、写真食刻工程で
用いるフォトレジストを除去するためのものである。ま
たアンモニア水と過酸化水素水と純水との混合液は、ウ
ェハー表面に付着しているパーティクルを除去するため
のものである。薬液処理槽後の純水リンス槽に連続して
レジスト除去及びパーティクル除去を行なうことにより
パーティクルの強固な付着によるパーティクル除去効率
の低下を防いでいる。The mixed solution of sulfuric acid and hydrogen peroxide is used to remove the photoresist used in the photolithography process. Further, the mixed solution of ammonia water, hydrogen peroxide solution, and pure water is used to remove particles attached to the wafer surface. Resist removal and particle removal are performed continuously in the pure water rinsing tank after the chemical treatment tank, thereby preventing a drop in particle removal efficiency due to strong adhesion of particles.
次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図は本発明の一実施例の自動シリコン酸化膜エツチ
ング装置の縦断面図である。キャリア８に搭載された被
処理半導体ウェハー９は、弗酸と弗化アンモニウムの混
合液からなる薬液処理槽１ａで所望パターンのシリコン
酸化膜をエツチングされる。次に薬液をリンスする純水
リンス槽２に移送される。次に硫酸と過酸化水素水の混
合液槽３く図面では硫酸・過水槽３と略記）でフォトレ
ジストを除去された後、純水リンス槽４に移送される。FIG. 1 is a longitudinal sectional view of an automatic silicon oxide film etching apparatus according to an embodiment of the present invention. A semiconductor wafer 9 to be processed mounted on a carrier 8 is subjected to etching of a silicon oxide film in a desired pattern in a chemical treatment tank 1a made of a mixed solution of hydrofluoric acid and ammonium fluoride. Next, it is transferred to a pure water rinsing tank 2 where the chemical solution is rinsed. Next, the photoresist is removed in a mixed solution tank 3 of sulfuric acid and hydrogen peroxide (abbreviated as sulfuric acid/hydrogen peroxide tank 3 in the drawings), and then transferred to a pure water rinsing tank 4.
次にアンモニア水と過酸化水素水と純水の混合液槽５（
図面ではアンモニア水・通水・純水槽５と略記）でウェ
ハー表面に付着したパーティクルを除去した後純水リン
ス槽６に移送される。次に遠心乾燥器７で乾燥される。Next, a mixed liquid tank 5 of ammonia water, hydrogen peroxide solution, and pure water (
After removing particles adhering to the wafer surface in an ammonia water/water flowing/pure water tank 5 in the drawings, the wafer is transferred to a pure water rinsing tank 6. Next, it is dried in a centrifugal dryer 7.
上記の移送は全て自動キャリア搬送機構１０により行わ
れる。All of the above transfers are performed by the automatic carrier transfer mechanism 10.
第３図は本実施例の効果を示すもので、シリコン酸化膜
をエツチングしたときのウェハー毎に付着したパーティ
クルの数を、従来の酸化膜エツチング装置でエツチング
処理し一度乾燥させた後、別のレジスト除去装置の硫酸
と過酸化水素水混合液槽及びアンモニア水と過酸化水素
水と純水混合液槽で処理した後に乾燥した場合と、本実
施例のように薬液処理後の乾燥処理を行なわない場合と
で比較したものである０本実施例のパーティクル付着数
は、ウェハー平均で４個と従来方式の平均３９個に比べ
約１０分の−に低減しており、本実施例のように薬液処
理後すぐに乾燥させることなくレジストの除去及びパー
ティクルの除去を行なうことの効果が謬著である。FIG. 3 shows the effect of this example. When a silicon oxide film is etched, the number of particles attached to each wafer is calculated by etching the silicon oxide film using a conventional oxide film etching device, drying it, and then drying it. In the case of drying after processing in the sulfuric acid and hydrogen peroxide mixed liquid tank and in the ammonia water, hydrogen peroxide and pure water mixed liquid tank of the resist removing device, and in the drying process after chemical treatment as in this example. The number of particles attached in this example is 4 on average on a wafer, which is about 10 times lower than the average of 39 in the conventional method. The effect of removing resist and particles without drying immediately after chemical processing is remarkable.
以上述べたように本発明の実施例のでは、シリコン酸化
膜エツチング装置について説明したが゛、ポリシリコン
膜等弗酸系の処理液を用いる全てのエツチング処理装置
に適用出来る。As described above, in the embodiments of the present invention, a silicon oxide film etching apparatus has been described, but the present invention can be applied to any etching apparatus that uses a hydrofluoric acid-based processing solution, such as a polysilicon film.
以上説明したように本発明は、シリコン半導体の写真食
刻工程における薬液処理において、シリコン酸化膜をエ
ツチングする等の薬液処理に連続しフォトレジストの除
去及びパーティクルの除去処理を行なうことにより、従
来薬液処理後の乾燥によりウェハーにパーティクルが固
着し、その後に行なうパーティクル除去によってもパー
ティクルを除くことが困難となる問題を解決した。これ
によりウェハーに残留するパーティクル数は従来方式の
約１０分の−に低減し、半導体デバイスの良品歩留りを
大幅に向上するという効果を有している。As explained above, in the chemical treatment in the photolithography process of silicon semiconductors, the present invention removes the photoresist and removes particles following the chemical treatment such as etching the silicon oxide film. This solves the problem in which particles adhere to the wafer due to drying after processing, making it difficult to remove the particles even when removing the particles afterwards. This reduces the number of particles remaining on the wafer to about 10 times that of the conventional method, and has the effect of greatly improving the yield of non-defective semiconductor devices.
第１図は本発明の一実施例の自動シリコン酸化膜エツチ
ング装置の縦断面図、第２図は従来技術におけるシリコ
ン酸化膜エツチング装置の縦断面図、第３図は従来及び
本発明の実施におけるパーティクル付着数の比較データ
示すグラフである。
１．１ａ・・・薬液処理槽、２，４．６・・・純水リン
ス槽、３・・・硫酸・過水槽、５・・・アンモニア水・
通水・純水槽、７・・・遠心乾燥機、８・・・キャリア
、９・・・半導体ウェハー、１０・・・自動キャリア搬
送機槽。FIG. 1 is a longitudinal sectional view of an automatic silicon oxide film etching apparatus according to an embodiment of the present invention, FIG. 2 is a longitudinal sectional view of a conventional silicon oxide film etching apparatus, and FIG. 3 is a longitudinal sectional view of an automatic silicon oxide film etching apparatus according to an embodiment of the present invention. It is a graph showing comparative data of the number of attached particles. 1.1a... Chemical treatment tank, 2, 4.6... Pure water rinsing tank, 3... Sulfuric acid/hydrogen tank, 5... Ammonia water/
Water flow/pure water tank, 7... Centrifugal dryer, 8... Carrier, 9... Semiconductor wafer, 10... Automatic carrier transfer machine tank.
Claims (1)
いて、薬液処理槽後の純水リンス槽に連続して設けられ
た各々１槽以上の硫酸と過酸化水素水の混合液槽と、純
水リンス槽と、アンモニア水と過酸化水素水と純水との
混合液槽及び純水リンス槽とで構成することを特徴とす
る半導体製造装置。 ２、薬液処理槽が弗酸系の混合液槽である請求項１記載
の半導体製造装置。 ３、半導体ウェハーを搭載したキャリアを各処理槽に自
動搬送する機構を有する請求項１記載の半導体製造装置
。[Scope of Claims] 1. In a semiconductor manufacturing apparatus that processes semiconductor wafers with a chemical solution, at least one tank of a mixed solution of sulfuric acid and hydrogen peroxide solution is provided in series with a pure water rinsing tank after the chemical processing tank. A semiconductor manufacturing apparatus comprising: a pure water rinsing tank; a mixed liquid tank of aqueous ammonia, hydrogen peroxide, and pure water; and a pure water rinsing tank. 2. The semiconductor manufacturing apparatus according to claim 1, wherein the chemical treatment tank is a hydrofluoric acid mixed liquid tank. 3. The semiconductor manufacturing apparatus according to claim 1, further comprising a mechanism for automatically transporting the carrier carrying the semiconductor wafer to each processing tank.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26678590A JPH04142741A (en) | 1990-10-04 | 1990-10-04 | Semiconductor manufacturing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26678590A JPH04142741A (en) | 1990-10-04 | 1990-10-04 | Semiconductor manufacturing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04142741A true JPH04142741A (en) | 1992-05-15 |
Family
ID=17435661
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26678590A Pending JPH04142741A (en) | 1990-10-04 | 1990-10-04 | Semiconductor manufacturing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04142741A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6340395B1 (en) * | 2000-01-18 | 2002-01-22 | Advanced Micro Devices, Inc. | Salsa clean process |
| US6790734B2 (en) | 2002-04-26 | 2004-09-14 | Nec Electronics Corporation | Manufacturing method of semiconductor device |
| DE19829863B4 (en) * | 1997-10-29 | 2006-06-29 | Mitsubishi Denki K.K. | Method for producing a semiconductor device |
| JP2008270824A (en) * | 2008-05-09 | 2008-11-06 | Renesas Technology Corp | Method for manufacturing semiconductor device |
-
1990
- 1990-10-04 JP JP26678590A patent/JPH04142741A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19829863B4 (en) * | 1997-10-29 | 2006-06-29 | Mitsubishi Denki K.K. | Method for producing a semiconductor device |
| US6340395B1 (en) * | 2000-01-18 | 2002-01-22 | Advanced Micro Devices, Inc. | Salsa clean process |
| US6790734B2 (en) | 2002-04-26 | 2004-09-14 | Nec Electronics Corporation | Manufacturing method of semiconductor device |
| JP2008270824A (en) * | 2008-05-09 | 2008-11-06 | Renesas Technology Corp | Method for manufacturing semiconductor device |
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