JP2008270824A - Method for manufacturing semiconductor device - Google Patents

Method for manufacturing semiconductor device Download PDF

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JP2008270824A
JP2008270824A JP2008123691A JP2008123691A JP2008270824A JP 2008270824 A JP2008270824 A JP 2008270824A JP 2008123691 A JP2008123691 A JP 2008123691A JP 2008123691 A JP2008123691 A JP 2008123691A JP 2008270824 A JP2008270824 A JP 2008270824A
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substrate
resist pattern
oxide film
etching
semiconductor device
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Takuya Nomoto
拓也 野元
Kazutoshi Anabuki
和敏 穴吹
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Renesas Technology Corp
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Renesas Technology Corp
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  • Weting (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device by which an appropriate etching can be conducted, such that an altered resist substance is not left when an oxidized film is wet-etched. <P>SOLUTION: The method for manufacturing a semiconductor device is characterized that the method comprises a step of forming an oxide film 1 on a substrate, a step of forming a resist pattern 2 on the oxide film 1, a step of etching the oxide film 1 by using the resist pattern 2 as a mask, a step of water-washing and drying the substrate, and a step of removing the resist pattern 2, wherein the step of removing the resist pattern 2 is a step of dipping the substrate in a mixture liquid of sulfuric acid and hydrogen peroxide after a step of water-washing the substrate without drying the substrate. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

この発明は半導体装置の製造方法に関し、特に、レジストマスクによる酸化膜の湿式エッチング処理方法に関するものである。   The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a wet etching method for an oxide film using a resist mask.

一般に、半導体装置の製造方法においては、フッ酸による酸化膜のエッチングが多用されている。図６（ａ）〜（ｄ）は従来の酸化膜のエッチング方法を示す工程断面図である。図に従って順次説明する。   In general, in a manufacturing method of a semiconductor device, etching of an oxide film with hydrofluoric acid is frequently used. 6A to 6D are process cross-sectional views showing a conventional oxide film etching method. This will be described in sequence with reference to the drawings.

まず、図６（ａ）に示すように、基板（図示なし）上に酸化膜１を形成する。次に、図６（ｂ）に示すように、レジストパターン２を形成する。次に、図６（ｃ）に示すように、基板を一定時間、フッ酸で満たされた薬液槽に浸すことにより、レジストパターン２をマスクとして酸化膜１をエッチングする。次に、基板を一定時間、水洗槽に浸して水洗を行った後スピン乾燥を行う。その後、大気中で基板を保管する。   First, as shown in FIG. 6A, an oxide film 1 is formed on a substrate (not shown). Next, as shown in FIG. 6B, a resist pattern 2 is formed. Next, as shown in FIG. 6C, the oxide film 1 is etched using the resist pattern 2 as a mask by immersing the substrate in a chemical bath filled with hydrofluoric acid for a certain period of time. Next, the substrate is immersed in a water rinsing tank for a certain period of time and washed with water, followed by spin drying. Thereafter, the substrate is stored in the atmosphere.

次に、図６（ｄ）に示すように、基板を一定時間、硫酸と過酸化水素水との混合液に浸し、レジストパターン２を除去する。その後、基板を一定時間、水洗槽に浸して水洗を行った後、スピン乾燥またはＩＰＡペーパー乾燥を行い、酸化膜１のエッチング工程を終了する。   Next, as shown in FIG. 6D, the substrate is immersed in a mixed solution of sulfuric acid and hydrogen peroxide solution for a certain period of time, and the resist pattern 2 is removed. Thereafter, the substrate is immersed in a washing tank for a certain period of time and washed with water, followed by spin drying or IPA paper drying, and the etching process of the oxide film 1 is completed.

また、レジストを残渣なく除去する方法として、例えば特許文献１には、ポリシリコンをドライエッチングした後、紫外線照射を行いレジストを除去する方法が述べられている。
特開平５−３０４０８９号公報 As a method for removing the resist without residue, for example, Patent Document 1 describes a method of removing the resist by performing ultraviolet irradiation after polysilicon is dry-etched.
JP-A-5-304089

従来の酸化膜の湿式エッチングは以上のようであり、図６（ｃ）に示した酸化膜１のエッチング工程において、図７（ａ）に示すように、レジストパターン２表面にフッ酸の染み込み３がおこる。また、その後のスピン乾燥後には、レジストパターン２段差部に残留水分４が残ってしまう。   The conventional wet etching of the oxide film is as described above, and in the etching process of the oxide film 1 shown in FIG. 6 (c), as shown in FIG. Happens. Further, after the subsequent spin drying, residual moisture 4 remains in the step portion of the resist pattern 2.

その後、大気中で基板を保管しているために、図７（ｂ）に示すように、残留水分４と大気中の酸素と酸化膜１とが化学変化を起こすとともに、残留水分４と大気中の酸素とレジストパターン２表面のフッ酸の染み込み３とが化学変化を起こし、レジストパターン２の一部に変質物７が生成されてしまう。その後、図７（ｃ）に示すように、レジストパターン２を除去しても変質物７が残ってしまい、良好な酸化膜エッチングが行えないという問題点があった。   After that, since the substrate is stored in the atmosphere, as shown in FIG. 7B, the residual moisture 4, the oxygen in the atmosphere, and the oxide film 1 undergo a chemical change, and the residual moisture 4 and the atmosphere. The oxygen and the permeation 3 of hydrofluoric acid on the surface of the resist pattern 2 cause a chemical change, and an altered product 7 is generated in a part of the resist pattern 2. Thereafter, as shown in FIG. 7C, the altered product 7 remains even if the resist pattern 2 is removed, and there is a problem that good oxide film etching cannot be performed.

また、上記特許文献１に開示された方法のように、酸化膜のエッチングマスクとしてのレジストに紫外線照射を行うと、レジストが硬化し下地の酸化膜とレジストとの界面にサイドエッチングがおこり、良好な酸化膜エッチングが行えないという問題点があった。   Further, as in the method disclosed in Patent Document 1, when the resist as an oxide film etching mask is irradiated with ultraviolet rays, the resist is cured and side etching occurs at the interface between the underlying oxide film and the resist. There is a problem that the oxide film cannot be etched properly.

この発明は上記のような問題点を解消するために成されたもので、酸化膜をフッ酸で湿式エッチング処理する際に、レジスト変質物が残ることのない良好なエッチングが行える半導体装置の製造方法を提供することを目的としている。   The present invention has been made to solve the above-described problems, and when a wet etching process is performed on an oxide film with hydrofluoric acid, a semiconductor device that can be satisfactorily etched without leaving a denatured resist is manufactured. It aims to provide a method.

この発明の請求項１に係る半導体装置の製造方法は、レジストパターンを除去する工程は、基板を水洗する工程の後、乾燥することなく直ぐに、基板を硫酸と過酸化水素水との混合液に浸漬する工程であるようにしたものである。   In the method of manufacturing a semiconductor device according to the first aspect of the present invention, the step of removing the resist pattern is carried out immediately after the step of washing the substrate with water, without drying, and the substrate is made into a mixed solution of sulfuric acid and hydrogen peroxide solution. This is a dipping process.

この発明の請求項２に係る半導体装置の製造方法は、基板を水洗および乾燥する工程の後、レジストパターンを除去する工程までの間、酸素が存在しない雰囲気中に基板を保つようにしたものである。   According to a second aspect of the present invention, there is provided a method of manufacturing a semiconductor device in which a substrate is maintained in an atmosphere in which oxygen is not present until the resist pattern is removed after the substrate is washed and dried. is there.

以上のようにこの発明によれば、エッチングパターンを形成する工程の後、上記酸化膜をエッチングする工程の前に、上記レジストパターンに紫外線を照射し、上記レジストパターン表面に上記薬液の染み込みを防止する硬化層を形成するようにしたので、残留水分によってレジストパターンに変質物が生成されることを防止することができる。   As described above, according to the present invention, after the step of forming an etching pattern and before the step of etching the oxide film, the resist pattern is irradiated with ultraviolet rays to prevent the chemical pattern from seeping into the resist pattern surface. Since the cured layer to be formed is formed, it is possible to prevent the denatured product from being generated in the resist pattern due to the residual moisture.

また、レジストパターンを除去する工程は、基板を水洗する工程の後、乾燥することなく直ぐに、基板を硫酸と過酸化水素水との混合液に浸漬する工程であるようにしたので、水洗した後大気中に保管することなく、直ぐにレジスト除去を行うことができ、レジストパターンの一部に変質物が生成されることを防止できる。   In addition, the step of removing the resist pattern is a step of immersing the substrate in a mixed solution of sulfuric acid and hydrogen peroxide water immediately after the step of rinsing the substrate with water, without drying. The resist can be removed immediately without storing it in the atmosphere, and it is possible to prevent generation of a denatured material in a part of the resist pattern.

また、基板を水洗および乾燥する工程の後、レジストパターンを除去する工程までの間、酸素が存在しない雰囲気中に上記基板を保つようにしたので、湿式エッチング後の水洗によってレジストパターン段差部に残留水分が残ることがあっても、酸素に晒されることがなくレジスト変質物を生成することを防止できる。   In addition, since the substrate is kept in an atmosphere in which oxygen does not exist after the step of washing and drying the substrate until the step of removing the resist pattern, it remains in the step portion of the resist pattern by washing with water after wet etching. Even if moisture remains, it is possible to prevent generation of a resist-modified product without being exposed to oxygen.

実施の形態１．
図１（ａ）〜（ｅ）はこの発明の実施の形態１の酸化膜のエッチング方法を示す工程断面図である。図に従って順次説明する。まず、図１（ａ）に示すように、基板（図示なし）上に酸化膜１を形成する。次に、図１（ｂ）に示すように、レジストパターン２を形成する。 Embodiment 1 FIG.
FIGS. 1A to 1E are process cross-sectional views illustrating an oxide film etching method according to the first embodiment of the present invention. This will be described in sequence with reference to the drawings. First, as shown in FIG. 1A, an oxide film 1 is formed on a substrate (not shown). Next, as shown in FIG. 1B, a resist pattern 2 is formed.

次に、図１（ｃ）に示すように、レジストパターン２に照射強度密度６５０ｍｗ／ｃｍ2の紫外線を２０秒照射する。このとき、レジストパターン２は収縮し、表面に硬化層５を形成する。 Next, as shown in FIG. 1C, the resist pattern 2 is irradiated with ultraviolet rays having an irradiation intensity density of 650 mw / cm 2 for 20 seconds. At this time, the resist pattern 2 shrinks and forms a hardened layer 5 on the surface.

次に、図１（ｄ）に示すように、基板を一定時間、フッ酸で満たされた薬液槽に浸すことにより、レジストパターン２をマスクとして酸化膜１をエッチングする。その後、基板を一定時間、水洗槽に浸して水洗を行った後スピン乾燥を行う。このとき、レジストパターン２の表面には硬化層５が形成されているのでフッ酸のレジストパターン２への染み込みを防止することができる。従って、スピン乾燥後にレジストパターン２段差部に残留水分４が残ったとしてもレジストパターン２表面のフッ酸の染み込み３と化学変化を起こし変質物７を形成することがない。   Next, as shown in FIG. 1D, the oxide film 1 is etched using the resist pattern 2 as a mask by immersing the substrate in a chemical bath filled with hydrofluoric acid for a certain period of time. Thereafter, the substrate is immersed in a water washing tank for a certain period of time, followed by water washing and spin drying. At this time, since the hardened layer 5 is formed on the surface of the resist pattern 2, it is possible to prevent permeation of hydrofluoric acid into the resist pattern 2. Therefore, even if the residual moisture 4 remains in the stepped portion of the resist pattern 2 after spin drying, the denatured product 7 is not formed by causing a chemical change with the penetration 3 of hydrofluoric acid on the surface of the resist pattern 2.

次に、図１（ｅ）に示すように、大気中で基板を保管し、基板を一定時間、硫酸と過酸化水素水との混合液に浸し、レジストパターン２を除去する。その後、基板を一定時間、水洗槽に浸して水洗を行った後、スピン乾燥またはＩＰＡペーパー乾燥を行い、酸化膜１のエッチング工程を終了する。   Next, as shown in FIG. 1E, the substrate is stored in the atmosphere, and the substrate is immersed in a mixed solution of sulfuric acid and hydrogen peroxide solution for a certain period of time to remove the resist pattern 2. Thereafter, the substrate is immersed in a washing tank for a certain period of time and washed with water, followed by spin drying or IPA paper drying, and the etching process of the oxide film 1 is completed.

この様にすれば、レジストパターン２の表面に硬化層５を形成することによりレジストパターン２への染み込みを防止することができ、残留水分４による変質物７の形成を防止することができる。   In this way, by forming the hardened layer 5 on the surface of the resist pattern 2, it is possible to prevent the resist pattern 2 from seeping into the resist pattern 2, and to prevent the formation of the altered material 7 due to the residual moisture 4.

ところが、図２に示すように、図１（ｃ）における紫外線の照射によって、レジストパターン２の表面には強い収縮力がはたらく。従って、紫外線の照射強度密度および照射時間によってはレジストパターン２に強い応力が生じ、下地酸化膜１とレジストパターン２との界面の接着力が弱くなり、酸化膜１のエッチング時に界面に薬液が入り込みサイドエッチング６が起こる場合がある。   However, as shown in FIG. 2, a strong contraction force acts on the surface of the resist pattern 2 by the irradiation of ultraviolet rays in FIG. Therefore, depending on the irradiation intensity density and irradiation time of the ultraviolet rays, a strong stress is generated in the resist pattern 2, the adhesive force at the interface between the underlying oxide film 1 and the resist pattern 2 is weakened, and a chemical enters the interface when the oxide film 1 is etched. Side etching 6 may occur.

図３は紫外線の照射強度密度６５０ｍｗ／ｃｍ2のときの照射時間とサイドエッチング量との関係を示す図である。図３からわかるように、照射時間が２０秒以上になるとサイドエッチング量は照射時間に比例して増加する。従って、照射強度密度６５０ｍｗ／ｃｍ2では紫外線照射時間を２０秒以下に設定する必要がある。 FIG. 3 is a graph showing the relationship between the irradiation time and the side etching amount when the irradiation intensity density of ultraviolet rays is 650 mw / cm 2 . As can be seen from FIG. 3, when the irradiation time is 20 seconds or more, the side etching amount increases in proportion to the irradiation time. Accordingly, it is necessary to set the ultraviolet irradiation time to 20 seconds or less at an irradiation intensity density of 650 mw / cm 2 .

今回、紫外線の照射強度密度および照射時間とレジストパターン２表面に形成される硬化層５との関係について実験を行ったところ、照射強度密度１００ｍｗ／ｃｍ2以上で５秒以上照射すれば、フッ酸の染み込みに対して良好な硬化層５を形成することができることがわかった。 This time, the relationship between the cured layer 5 formed on the irradiation power density and irradiation time and the resist pattern 2 surface of the ultraviolet was subjected to experiments by irradiating at least 5 seconds at an irradiation intensity density 100 mw / cm 2 or more, hydrofluoric acid It turned out that the favorable hardened layer 5 can be formed with respect to soaking of.

従って、紫外線照射密度１００〜６５０ｍｗ／ｃｍ2で、照射時間５〜２０秒の紫外線照射をレジストパターン２へ行えば、レジストパターン２の表面に硬化層５を形成してフッ酸の染み込みを防止でき、残留水分４による変質物７の形成を防止することができるとともに、サイドエッチングを防止することができ、良好な酸化膜の湿式エッチングを行うことができる。 Therefore, if ultraviolet irradiation with an ultraviolet irradiation density of 100 to 650 mw / cm 2 and an irradiation time of 5 to 20 seconds is performed on the resist pattern 2, a cured layer 5 can be formed on the surface of the resist pattern 2 to prevent penetration of hydrofluoric acid. Further, the formation of the altered material 7 due to the residual moisture 4 can be prevented, side etching can be prevented, and good wet etching of the oxide film can be performed.

実施の形態２．
ここでは、レジスト変質物を形成する原因である残留水分と大気中の酸素とを除去する方法について説明する。図４（ａ）〜（ｄ）は実施の形態２の酸化膜のエッチング方法を示す工程断面図である。図に従って順次説明する。 Embodiment 2. FIG.
Here, a method for removing residual moisture and oxygen in the atmosphere, which are the cause of forming a resist-modified product, will be described. 4A to 4D are process cross-sectional views illustrating the oxide film etching method of the second embodiment. This will be described in sequence with reference to the drawings.

まず、図４（ａ）に示すように、基板（図示なし）上に酸化膜１を形成する。次に、図４（ｂ）に示すように、レジストパターン２を形成する。次に、図４（ｃ）に示すように、基板を一定時間、フッ酸で満たされた薬液槽に浸すことにより、レジストパターン２をマスクとして酸化膜１をエッチングする。このとき、レジストパターン２表面にフッ酸の染み込み３がおこる。その後、基板を一定時間、水洗槽に浸して水洗を行う。   First, as shown in FIG. 4A, an oxide film 1 is formed on a substrate (not shown). Next, as shown in FIG. 4B, a resist pattern 2 is formed. Next, as shown in FIG. 4C, the oxide film 1 is etched using the resist pattern 2 as a mask by immersing the substrate in a chemical bath filled with hydrofluoric acid for a certain period of time. At this time, soaking 3 of hydrofluoric acid occurs on the surface of the resist pattern 2. Thereafter, the substrate is immersed in a water washing tank for a certain period of time to perform water washing.

次に、図４（ｄ）に示すように、スピン乾燥を行わずに水洗後直ちに、基板を一定時間、硫酸と過酸化水素水との混合液に浸し、レジストパターン２を除去する。この様にすれば、レジストパターン２段差部に水洗時の水分の一部が残留水分４として残ることがなく、基板が大気中の酸素に晒されることもない。その後、基板を一定時間、水洗槽に浸して水洗を行った後、スピン乾燥またはＩＰＡペーパー乾燥を行い、酸化膜１のエッチング工程を終了する。   Next, as shown in FIG. 4D, immediately after washing with water without performing spin drying, the substrate is immersed in a mixed solution of sulfuric acid and hydrogen peroxide for a certain period of time to remove the resist pattern 2. In this way, a part of the water at the time of washing with water is not left as residual moisture 4 in the step portion of the resist pattern 2 and the substrate is not exposed to oxygen in the atmosphere. Thereafter, the substrate is immersed in a washing tank for a certain period of time and washed with water, followed by spin drying or IPA paper drying, and the etching process of the oxide film 1 is completed.

この様にすれば、酸化膜１の湿式エッチングの後、水洗した後大気中に保管することなく、直ぐに、湿式でレジスト除去を行うので、レジストパターン２の一部に変質物７が生成されることなく、良好な酸化膜の湿式エッチングを行うことができる。   In this way, after the wet etching of the oxide film 1, the resist is immediately removed by wet without being stored in the air after being washed with water, so that the altered material 7 is generated in a part of the resist pattern 2. Therefore, wet etching of a good oxide film can be performed.

実施の形態３．
上記実施の形態２では水洗後、大気中に保管することなく直ぐに、レジスト除去を行う方法について説明を行ったが、ここでは酸素を有しない雰囲気中に保管する場合について説明する。 Embodiment 3 FIG.
In the second embodiment, the method of removing the resist immediately after washing with water without storing it in the air has been described. Here, the case of storing in an atmosphere not containing oxygen will be described.

図５（ａ）〜（ｄ）は実施の形態３の酸化膜のエッチング方法を示す工程断面図である。図に従って順次説明する。まず、図５（ａ）に示すように、基板（図示なし）上に酸化膜１を形成する。次に、図５（ｂ）に示すように、レジストパターン２を形成する。   FIGS. 5A to 5D are process cross-sectional views illustrating the oxide film etching method of the third embodiment. This will be described in sequence with reference to the drawings. First, as shown in FIG. 5A, an oxide film 1 is formed on a substrate (not shown). Next, as shown in FIG. 5B, a resist pattern 2 is formed.

次に、図５（ｃ）に示すように、基板を一定時間、フッ酸で満たされた薬液槽に浸すことにより、レジストパターン２をマスクとして酸化膜１をエッチングする。次に、基板を一定時間、水洗槽に浸して水洗を行った後スピン乾燥を行う。このとき、スピン乾燥後には、レジストパターン２段差部に残留水分４が残ってしまう。その後、酸素が存在しない雰囲気中、例えば、Ｎ2ガスで充填された保管庫の中で基板を保管する。 Next, as shown in FIG. 5C, the oxide film 1 is etched using the resist pattern 2 as a mask by immersing the substrate in a chemical bath filled with hydrofluoric acid for a certain period of time. Next, the substrate is immersed in a water rinsing tank for a certain period of time and washed with water, followed by spin drying. At this time, after spin drying, residual moisture 4 remains in the step portion of the resist pattern 2. Thereafter, the substrate is stored in an atmosphere in which no oxygen exists, for example, in a storage filled with N 2 gas.

次に、図５（ｄ）に示すように、Ｎ2ガス保管庫から基板を取り出して直ぐに、基板を一定時間、硫酸と過酸化水素水との混合液に浸し、レジストパターン２を除去する。その後、基板を一定時間、水洗槽に浸して水洗を行った後、スピン乾燥またはＩＰＡペーパー乾燥を行い、酸化膜１のエッチング工程を終了する。 Next, as shown in FIG. 5D, immediately after the substrate is taken out from the N 2 gas storage, the substrate is immersed in a mixed solution of sulfuric acid and hydrogen peroxide solution for a certain period of time to remove the resist pattern 2. Thereafter, the substrate is immersed in a washing tank for a certain period of time and washed with water, followed by spin drying or IPA paper drying, and the etching process of the oxide film 1 is completed.

この様にすれば、湿式エッチング後の水洗によってレジストパターン２段差部に残留水分４が残ることがあっても酸素に晒されることがなくレジスト変質物を生成することがない。したがって、良好な酸化膜の湿式エッチングを行うことができる。   In this way, even if the residual moisture 4 remains in the stepped portion of the resist pattern 2 by washing with water after wet etching, it is not exposed to oxygen and does not generate altered resist. Therefore, good wet etching of the oxide film can be performed.

この発明の実施の形態１の酸化膜のエッチング方法を示す工程断面図である。It is process sectional drawing which shows the etching method of the oxide film of Embodiment 1 of this invention. この発明の実施の形態１の酸化膜のエッチング方法における問題点を示す工程断面図である。It is process sectional drawing which shows the problem in the etching method of the oxide film of Embodiment 1 of this invention. 紫外線の照射強度密度６５０ｍｗ／ｃｍ2のときの照射時間とサイドエッチング量との関係を示す図である。It is a figure which shows the relationship between the irradiation time at the time of the irradiation intensity density of an ultraviolet-ray 650mw / cm < 2 >, and the amount of side etching. この発明の実施の形態２の酸化膜のエッチング方法を示す工程断面図である。It is process sectional drawing which shows the etching method of the oxide film of Embodiment 2 of this invention. この発明の実施の形態３の酸化膜のエッチング方法を示す工程断面図である。It is process sectional drawing which shows the etching method of the oxide film of Embodiment 3 of this invention. 従来の酸化膜のエッチング方法を示す工程断面図である。It is process sectional drawing which shows the etching method of the conventional oxide film. 従来の酸化膜のエッチング方法の問題点を示す工程断面図である。It is process sectional drawing which shows the trouble of the etching method of the conventional oxide film.

符号の説明Explanation of symbols

１ 酸化膜、２ レジストパターン、３ フッ酸の染み込み、４ 残留水分、５ 硬化層、６ サイドエッチング、７ 変質物。   1 oxide film, 2 resist pattern, 3 soaking of hydrofluoric acid, 4 residual moisture, 5 hardened layer, 6 side etching, 7 altered material.

Claims (2)

基板上に酸化膜を形成する工程と、上記酸化膜上にレジストパターンを形成する工程と、上記基板を薬液に浸漬することにより上記レジストパターンをマスクとして上記酸化膜をエッチングする工程と、上記基板を水洗および乾燥する工程と、上記レジストパターンを除去する工程と、を備えた半導体装置の製造方法において、上記レジストパターンを除去する工程は、上記基板を水洗する工程の後、乾燥することなく直ぐに、基板を硫酸と過酸化水素水との混合液に浸漬する工程であることを特徴とする半導体装置の製造方法。   A step of forming an oxide film on the substrate, a step of forming a resist pattern on the oxide film, a step of etching the oxide film using the resist pattern as a mask by immersing the substrate in a chemical solution, and the substrate In the method of manufacturing a semiconductor device comprising the steps of washing and drying the substrate and removing the resist pattern, the step of removing the resist pattern is performed without drying after the step of washing the substrate with water. A method of manufacturing a semiconductor device, which is a step of immersing the substrate in a mixed solution of sulfuric acid and hydrogen peroxide. 基板上に酸化膜を形成する工程と、上記酸化膜上にレジストパターンを形成する工程と、上記基板を薬液に浸漬することにより上記レジストパターンをマスクとして上記酸化膜をエッチングする工程と、上記基板を水洗および乾燥する工程と、上記レジストパターンを除去する工程と、を備えた半導体装置の製造方法において、上記基板を水洗および乾燥する工程の後、上記レジストパターンを除去する工程までの間、酸素が存在しない雰囲気中に上記基板を保つことを特徴とする半導体装置の製造方法。   A step of forming an oxide film on the substrate, a step of forming a resist pattern on the oxide film, a step of etching the oxide film using the resist pattern as a mask by immersing the substrate in a chemical solution, and the substrate In the method of manufacturing a semiconductor device comprising: a step of washing and drying the substrate; and a step of removing the resist pattern. After the step of washing and drying the substrate and the step of removing the resist pattern, oxygen A method for manufacturing a semiconductor device, characterized in that the substrate is maintained in an atmosphere in which no air is present.
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