JP3134483B2 - Processing equipment for semiconductor substrates using liquids - Google Patents
Processing equipment for semiconductor substrates using liquidsInfo
- Publication number
- JP3134483B2 JP3134483B2 JP04103737A JP10373792A JP3134483B2 JP 3134483 B2 JP3134483 B2 JP 3134483B2 JP 04103737 A JP04103737 A JP 04103737A JP 10373792 A JP10373792 A JP 10373792A JP 3134483 B2 JP3134483 B2 JP 3134483B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- discharge port
- back surface
- processing
- liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Weting (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Description
【0001】[0001]
【産業上の利用分野】本発明は、半導体基板を液体によ
り処理する場合の処理装置に関する。本発明に係る半導
体基板の処理装置は、半導体基板の片面のみを薬液で処
理する場合に利用できる。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a processing apparatus for processing a semiconductor substrate with a liquid. The semiconductor substrate processing apparatus according to the present invention can be used when only one side of a semiconductor substrate is processed with a chemical .
【0002】[0002]
【従来の技術】半導体装置製造の際など、半導体基板
(以下適宜「半導体ウェハ」と称することもある)を液
体で処理する工程を要する場合がある。例えばシリコン
半導体ウェハの表面に空気酸化により生ずるいわゆる自
然酸化膜をフッ酸系の薬液で処理する場合などである。
また、薬液処理後には、一般に、水等により洗浄する必
要がある。2. Description of the Related Art When manufacturing a semiconductor device, for example, a process of treating a semiconductor substrate (hereinafter, also referred to as a "semiconductor wafer" as appropriate) with a liquid may be required. For example, there is a case where a so-called natural oxide film generated by air oxidation on the surface of a silicon semiconductor wafer is treated with a hydrofluoric acid-based chemical.
After the chemical treatment, it is generally necessary to wash with water or the like.
【0003】従来、このような液体による処理に際して
は、半導体ウェハの片面だけを薬液処理する場合、反対
面をフォトレジスト等により耐薬品コーティングし、薬
液槽に浸し、処理後にコーティングを除去していた。Conventionally, in such a treatment with a liquid, when only one surface of a semiconductor wafer is treated with a chemical solution, the opposite surface is coated with a chemical resistant material such as a photoresist, immersed in a chemical solution tank, and the coating is removed after the treatment. .
【0004】このような従来方法では、耐薬品コーティ
ングをする工程と、処理後に除去する工程に、時間を多
く費やしていた。また、コーティング材からの汚染がも
たらされるおそれがあった。[0004] In such a conventional method, much time is spent on the step of forming a chemical resistant coating and the step of removing after the treatment. In addition, there is a possibility that contamination from the coating material may be caused.
【0005】[0005]
【発明の目的】本発明は、上記従来技術の問題点を解決
して、液体による処理を少ない工程数で短い時間で行う
ことができ、生産性を高めることを可能とし、また、コ
ーティング材等を用いる必要をなくして汚染等の問題を
解決した、液体による半導体装置の処理装置を提供する
ことを目的とする。An object of the present invention is to solve the above-mentioned problems of the prior art, and to perform a liquid treatment in a small number of steps in a short time, thereby enabling an increase in productivity and a coating material. It is an object of the present invention to provide a processing apparatus for a semiconductor device using a liquid, which eliminates the need for using a semiconductor device and solves problems such as contamination.
【0006】[0006]
【発明の構成】本発明に係る半導体基板の液体による処
理装置は、上記目的を達成するため、半導体基板の上方
に位置して半導体基板の表面に処理液を吐出する第1の
吐出口と、半導体基板の下方に位置して半導体基板の裏
面に処理液を吐出する第2の吐出口とを備え、第1の吐
出口から半導体基板の表面に純水を吐出するとともに、
第2の吐出口から半導体基板の裏面に薬液を吐出して、
半導体基板の表面及び裏面の処理を同時に行う構成とし
たものである。According to the present invention, there is provided an apparatus for treating a semiconductor substrate with a liquid, the apparatus comprising a semiconductor substrate disposed above the semiconductor substrate.
A first discharge port that discharges the processing liquid to the surface of the semiconductor substrate, and a second discharge port that discharges the processing liquid to the back surface of the semiconductor substrate, which is positioned below the semiconductor substrate. And the first spitting
While discharging pure water from the outlet to the surface of the semiconductor substrate,
Discharging a chemical solution from the second discharge port to the back surface of the semiconductor substrate,
In this configuration, the processing of the front surface and the back surface of the semiconductor substrate is performed simultaneously.
【0007】[0007]
【作用】本発明によれば、第1,第2の吐出口から同時
に処理液を吐出して、半導体基板の表・裏面両面を同時
に液体処理することができる。よって本発明によれば、
従来、耐薬品コーティング、薬液処理、コーティング除
去の3工程必要だった場合も、薬液処理のみの1工程と
することができた。また、コーティング材を要さないの
で、コーティング材に伴う例えば汚染などのおそれがな
い。According to the present invention, the processing liquid can be simultaneously discharged from the first and second discharge ports to simultaneously perform liquid processing on both the front and back surfaces of the semiconductor substrate. Therefore, according to the present invention,
Conventionally, even when three steps of chemical coating, chemical treatment, and coating removal were required, only one chemical treatment could be performed. Further, since a coating material is not required, there is no risk of, for example, contamination accompanying the coating material.
【0008】[0008]
【実施例】以下本発明の実施例について説明する。但
し、当然のことではあるが、本発明は以下に示す実施例
により限定を受けるものではない。Embodiments of the present invention will be described below. However, needless to say, the present invention is not limited by the following embodiments.
【0009】実施例1 本実施例の装置を図1に示す。本実施例は、被処理半導
体基板1である半導体ウェハが、その両面(表面1a及
び裏面1b)に酸化膜の付いたシリコンウェハであり、
その裏面1bの酸化膜のみを除去する場合に、本発明を
適用したものである。Embodiment 1 FIG. 1 shows an apparatus of this embodiment. In the present embodiment, the semiconductor wafer to be processed is a silicon wafer having an oxide film on both surfaces (front surface 1a and back surface 1b),
The present invention is applied when only the oxide film on the back surface 1b is removed.
【0010】本実施例の処理装置は、図1に示すよう
に、半導体基板1の表面1aに第1の処理液31を吐出
する第1の吐出口2と、半導体基板1の裏面1bに第2
の処理液32を吐出する第2の吐出口22とを備え、第
1,第2の吐出口21,22から同時に同一もしくは異
なる処理液を吐出して、半導体基板1の表面1a及び裏
面1b処理を同時に行う構成としたものである。特に、
半導体基板の上方に位置する第1の吐出口21から半導
体基板1の表面1aに純水を吐出するとともに、半導体
基板の下方に位置する第2の吐出口22から半導体基板
1の裏面1bに薬液を吐出して、半導体基板の表面及び
裏面の処理を同時に行う構成としたものである。 As shown in FIG. 1, the processing apparatus of this embodiment has a first discharge port 2 for discharging a first processing liquid 31 on a front surface 1a of a semiconductor substrate 1 and a first discharge port 2 on a back surface 1b of the semiconductor substrate 1. 2
And a second discharge port 22 for discharging the same processing liquid 32. The same or different processing liquid is simultaneously discharged from the first and second discharge ports 21 and 22 to process the front surface 1a and the rear surface 1b of the semiconductor substrate 1. At the same time. In particular,
Semi-conductor from the first discharge port 21 located above the semiconductor substrate.
Pure water is discharged onto the surface 1a of the body substrate 1 and a semiconductor
A second discharge port 22 located below the substrate;
A chemical solution is discharged to the back surface 1b of the semiconductor substrate 1 so that
In this configuration, the processing on the back surface is performed simultaneously.
【0011】更に具体的には、本実施例では、図1に示
すとおり半導体基板1のエッヂのみをスピンチャック4
でチャックして、回転軸41を中心にして回転しなが
ら、上部ノズルである第1の吐出口2から、半導体基板
1のウェハ表面1aに処理液31を吐出し、下部ノズル
である第2の吐出口22から、半導体基板1のウェハ裏
面1bに処理液32を吐出して、処理を行う。ここで、
被処理半導体基板1は、両面に酸化膜(SiO2 )の付
いたSiウェハであり、その裏面1bのみ酸化膜除去す
る場合であるので、上部ノズルである第1の吐出口21
から第1の処理液31として純水を吐出し、下部ノズル
である第2の吐出口22から第2の処理液32としてフ
ッ酸(HF)を吐出する。これにより、表面1aにフッ
酸が回り込むことなく、裏面1bのみ、酸化膜除去が行
える。More specifically, in the present embodiment, as shown in FIG.
And discharges the processing liquid 31 from the first discharge port 2 as the upper nozzle to the wafer surface 1a of the semiconductor substrate 1 while rotating about the rotation shaft 41 as a center. Processing is performed by discharging the processing liquid 32 from the discharge port 22 to the wafer back surface 1b of the semiconductor substrate 1. here,
The semiconductor substrate 1 to be processed is a Si wafer having an oxide film (SiO 2 ) on both sides, and the oxide film is removed only on the back surface 1b.
Then, pure water is discharged as a first processing liquid 31 and hydrofluoric acid (HF) is discharged as a second processing liquid 32 from a second discharge port 22 which is a lower nozzle. Thus, the oxide film can be removed only on the back surface 1b without the hydrofluoric acid wrapping around the front surface 1a.
【0012】半導体基板1の裏面1bのみの膜除去が必
要となるのは、例えば次のような場合である。即ち、例
えばRTA(Rapid Thermal Annea
l)にてウェハをアニールする時の温度制御は、ウェハ
裏面からの熱放射を放射温度計にて測定して行ってい
る。この時、裏面の膜種によって補正をしなければなら
ない。ここで、裏面のみ膜を除去することで、基板材質
の放射率に固定して、温度測定が可能となる。よってこ
の場合、裏面のみの膜除去が有効になる。The removal of the film only from the back surface 1b of the semiconductor substrate 1 is required, for example, in the following case. That is, for example, RTA (Rapid Thermal Anneal)
Temperature control when annealing the wafer in 1) is performed by measuring heat radiation from the back surface of the wafer with a radiation thermometer. At this time, correction must be made according to the type of film on the back surface. Here, by removing the film only on the back surface, the emissivity of the substrate material is fixed and the temperature can be measured. Therefore, in this case, removal of the film only on the back surface is effective.
【0013】本実施例により、簡明な、少ない工程によ
り、短時間で効率的な処理が達成でき、かつ、汚染の問
題も生じなかった。According to this embodiment, efficient processing can be achieved in a short time with simple and few steps, and there is no problem of contamination.
【0014】なお図1中、スピンチャック4は、3本程
度の数本の把持部で半導体基板1を把持し、それ以外は
空間となっているものを用いることにより、処理液32
がスピンチャック4に邪魔されずに、基板1の裏面1b
を処理できる。In FIG. 1, the spin chuck 4 grips the semiconductor substrate 1 with several gripping parts, such as about three, and uses a space other than that to form the processing liquid 32.
Is not disturbed by the spin chuck 4 and the back surface 1b of the substrate 1
Can be processed.
【0015】実施例2 実施例1では、シリコン上の酸化膜SiO2 の裏面のみ
における除去を行ったが、この実施例では、シリコン半
導体基板上のシリコンナイトライド(SiN)を除去す
るのに、本発明を用いた。本実施例では、第2の処理液
22として、150℃前後のH3 PO4 を用いて、膜除
去を行った。その他は実施例1と同様に行った。本実施
例によって、実施例1と同様な効果が得られる。Embodiment 2 In Embodiment 1, the removal was performed only on the back surface of the oxide film SiO 2 on silicon. In this embodiment, however, the silicon nitride (SiN) on the silicon semiconductor substrate was removed. The present invention was used. In the present embodiment, the film was removed using H 3 PO 4 at about 150 ° C. as the second processing liquid 22. Others were performed similarly to Example 1. According to this embodiment, the same effect as that of the first embodiment can be obtained.
【0016】実施例3 本実施例では、半導体基板上の多結晶Si膜を除去する
ようにした。多結晶Si膜除去用処理液としてKOH水
溶液を用い、その他は実施例1と同様にした。本実施例
でも、実施例1と同様な効果が得られる。Embodiment 3 In this embodiment, the polycrystalline Si film on the semiconductor substrate is removed. A KOH aqueous solution was used as a treatment liquid for removing a polycrystalline Si film, and the other conditions were the same as in Example 1. In this embodiment, the same effects as those of the first embodiment can be obtained.
【0017】[0017]
【発明の効果】本発明によれば、液体による処理を少な
い工程数で短い時間で行うことができ、生産性を高める
ことが可能で、また、コーティング材等を用いる必要が
なく、汚染等の問題もない。According to the present invention, the treatment with the liquid can be carried out in a small number of steps in a short time, and the productivity can be increased. Further, there is no need to use a coating material or the like, and the contamination can be reduced. No problem.
【図面の簡単な説明】[Brief description of the drawings]
【図1】実施例1の処理装置の構成図である。FIG. 1 is a configuration diagram of a processing apparatus according to a first embodiment.
1 半導体基板(被処理半導体ウェハ) 21 第1の吐出口(上部ノズル) 22 第2の吐出口(下部ノズル) 31 第1の処理液(純水) 32 第2の処理液(フッ酸等の薬液) Reference Signs List 1 semiconductor substrate (processed semiconductor wafer) 21 first discharge port (upper nozzle) 22 second discharge port (lower nozzle) 31 first processing liquid (pure water) 32 second processing liquid (such as hydrofluoric acid) Chemical)
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7,DB名) H01L 21/304 643 H01L 21/306 ──────────────────────────────────────────────────続 き Continued on the front page (58) Fields surveyed (Int.Cl. 7 , DB name) H01L 21/304 643 H01L 21/306
Claims (1)
表面に処理液を吐出する第1の吐出口と、半導体基板の
下方に位置して半導体基板の裏面に処理液を吐出する第
2の吐出口とを備え、 第1の吐出口から半導体基板の表面に純水を吐出すると
ともに、第2の吐出口から半導体基板の裏面に薬液を吐
出して、半導体基板の表面及び裏面の処理を同時に行う
構成とした半導体基板の液体による処理装置。A first discharge port positioned above the semiconductor substrate for discharging a processing liquid onto a surface of the semiconductor substrate;
A second discharge port which is located below and discharges the processing liquid to the back surface of the semiconductor substrate; and when pure water is discharged from the first discharge port to the surface of the semiconductor substrate.
In both cases, a chemical solution is discharged from the second discharge port to the back surface of the semiconductor substrate.
And a liquid processing apparatus for a semiconductor substrate configured to simultaneously perform processing on the front surface and the rear surface of the semiconductor substrate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP04103737A JP3134483B2 (en) | 1992-03-30 | 1992-03-30 | Processing equipment for semiconductor substrates using liquids |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP04103737A JP3134483B2 (en) | 1992-03-30 | 1992-03-30 | Processing equipment for semiconductor substrates using liquids |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH05283387A JPH05283387A (en) | 1993-10-29 |
JP3134483B2 true JP3134483B2 (en) | 2001-02-13 |
Family
ID=14361942
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP04103737A Expired - Fee Related JP3134483B2 (en) | 1992-03-30 | 1992-03-30 | Processing equipment for semiconductor substrates using liquids |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3134483B2 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002164318A (en) * | 2000-11-27 | 2002-06-07 | Ishii Hyoki Corp | Substrate-spinning apparatus |
JP2011187887A (en) * | 2010-03-11 | 2011-09-22 | Toyota Motor Corp | Method of manufacturing epitaxial wafer |
-
1992
- 1992-03-30 JP JP04103737A patent/JP3134483B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH05283387A (en) | 1993-10-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |