JPH05283387A - Treatment device of semiconductor substrate by liquid - Google Patents
Treatment device of semiconductor substrate by liquidInfo
- Publication number
- JPH05283387A JPH05283387A JP10373792A JP10373792A JPH05283387A JP H05283387 A JPH05283387 A JP H05283387A JP 10373792 A JP10373792 A JP 10373792A JP 10373792 A JP10373792 A JP 10373792A JP H05283387 A JPH05283387 A JP H05283387A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- liquid
- treatment
- back surface
- discharging
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体基板を液体によ
り処理する場合の処理装置に関する。本発明に係る半導
体基板の処理装置は、例えば、半導体基板面を薬液で処
理したり、水ないしは洗浄液により洗浄処理する場合に
利用できる。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a processing apparatus for processing a semiconductor substrate with a liquid. INDUSTRIAL APPLICABILITY The semiconductor substrate processing apparatus according to the present invention can be used, for example, when the surface of a semiconductor substrate is treated with a chemical solution or is washed with water or a cleaning solution.
【０００２】[0002]
【従来の技術】半導体装置製造の際など、半導体基板
（以下適宜「半導体ウェハ」と称することもある）を液
体で処理する工程を要する場合がある。例えばシリコン
半導体ウェハの表面に空気酸化により生ずるいわゆる自
然酸化膜をフッ酸系の薬液で処理する場合などである。
また、薬液処理後には、一般に、水等により洗浄する必
要がある。2. Description of the Related Art A process of treating a semiconductor substrate (hereinafter sometimes referred to as a "semiconductor wafer") with a liquid is sometimes required when manufacturing a semiconductor device. For example, there is a case where a so-called natural oxide film formed on the surface of a silicon semiconductor wafer by air oxidation is treated with a hydrofluoric acid-based chemical solution.
In addition, it is generally necessary to wash with water or the like after the chemical treatment.
【０００３】従来、このような液体による処理に際して
は、半導体ウェハの片面だけを薬液処理する場合、反対
面をフォトレジスト等により耐薬品コーティングし、薬
液槽に浸し、処理後にコーティングを除去していた。Conventionally, in treating with such a liquid, when only one side of a semiconductor wafer is treated with a chemical solution, the other side is chemically coated with a photoresist or the like, immersed in a chemical bath, and the coating is removed after the treatment. ..
【０００４】このような従来方法では、耐薬品コーティ
ングをする工程と、処理後に除去する工程に、時間を多
く費やしていた。また、コーティング材からの汚染がも
たらされるおそれがあった。In such a conventional method, a large amount of time is spent on the step of applying the chemical resistant coating and the step of removing it after the treatment. In addition, there is a possibility that the coating material may cause contamination.
【０００５】[0005]
【発明の目的】本発明は、上記従来技術の問題点を解決
して、液体による処理を少ない工程数で短い時間で行う
ことができ、生産性を高めることを可能とし、また、コ
ーティング材等を用いる必要をなくして汚染等の問題を
解決した、液体による半導体装置の処理装置を提供する
ことを目的とする。SUMMARY OF THE INVENTION The present invention solves the above-mentioned problems of the prior art, enables treatment with a liquid in a small number of steps and in a short time, and makes it possible to enhance productivity. An object of the present invention is to provide a processing apparatus for a semiconductor device using a liquid, which eliminates the need to use the above and solves problems such as contamination.
【０００６】[0006]
【発明の構成】本発明に係る半導体基板の液体による処
理装置は、上記目的を達成するため、半導体基板の表面
に処理液を吐出する第１の吐出口と、半導体基板の裏面
に処理液を吐出する第２の吐出口とを備え、第１，第２
の吐出口から同時に同一もしくは異なる処理液を吐出し
て、半導体基板の表面及び裏面の処理を同時に行う構成
としたものである。In order to achieve the above-mentioned object, a semiconductor substrate liquid treatment apparatus according to the present invention has a first ejection port for ejecting a treatment liquid on the front surface of a semiconductor substrate and a treatment liquid on the back surface of the semiconductor substrate. A second discharge port for discharging,
The same or different treatment liquids are simultaneously ejected from the ejection port to simultaneously treat the front and back surfaces of the semiconductor substrate.
【０００７】[0007]
【作用】本発明によれば、第１，第２の吐出口から同時
に処理液を吐出して、半導体基板の表・裏面両面を同時
に液体処理することができる。よって本発明によれば、
従来、耐薬品コーティング、薬液処理、コーティング除
去の３工程必要だった場合も、薬液処理のみの１工程と
することができた。また、コーティング材を要さないの
で、コーティング材に伴う例えば汚染などのおそれがな
い。According to the present invention, the processing liquid can be simultaneously discharged from the first and second discharge ports to perform liquid processing on both front and back surfaces of the semiconductor substrate at the same time. Therefore, according to the present invention,
Conventionally, even if three steps of chemical-resistant coating, chemical treatment and coating removal were required, it was possible to make only one chemical treatment step. Further, since no coating material is required, there is no risk of contamination, for example, with the coating material.
【０００８】[0008]
【実施例】以下本発明の実施例について説明する。但
し、当然のことではあるが、本発明は以下に示す実施例
により限定を受けるものではない。EXAMPLES Examples of the present invention will be described below. However, as a matter of course, the present invention is not limited to the examples described below.
【０００９】実施例１ 本実施例の装置を図１に示す。本実施例は、被処理半導
体基板１である半導体ウェハが、その両面（表面１ａ及
び裏面１ｂ）に酸化膜の付いたシリコンウェハであり、
その裏面１ｂの酸化膜のみを除去する場合に、本発明を
適用したものである。Example 1 The apparatus of this example is shown in FIG. In this embodiment, the semiconductor wafer which is the semiconductor substrate 1 to be processed is a silicon wafer having an oxide film on both surfaces (front surface 1a and back surface 1b).
The present invention is applied when only the oxide film on the back surface 1b is removed.
【００１０】本実施例の処理装置は、図１に示すよう
に、半導体基板１の表面１ａに第１の処理液３１を吐出
する第１の吐出口２と、半導体基板１の裏面１ｂに第２
の処理液３２を吐出する第２の吐出口２２とを備え、第
１，第２の吐出口２１，２２から同時に同一もしくは異
なる処理液を吐出して、半導体基板１の表面１ａ及び裏
面１ｂ処理を同時に行う構成としたものである。As shown in FIG. 1, the processing apparatus of the present embodiment has a first discharge port 2 for discharging a first processing liquid 31 on the front surface 1a of the semiconductor substrate 1 and a first discharge port 2 on the back surface 1b of the semiconductor substrate 1. Two
Second ejection port 22 for ejecting the treatment liquid 32 of the above, and the same or different treatment liquids are simultaneously ejected from the first and second ejection ports 21 and 22 to process the front surface 1a and the back surface 1b of the semiconductor substrate 1. It is configured to perform simultaneously.
【００１１】更に具体的には、本実施例では、図１に示
すとおり半導体基板１のエッヂのみをスピンチャック４
でチャックして、回転軸４１を中心にして回転しなが
ら、上部ノズルである第１の吐出口２から、半導体基板
１のウェハ表面１ａに処理液３１を吐出し、下部ノズル
である第２の吐出口２２から、半導体基板１のウェハ裏
面１ｂに処理液３２を吐出して、処理を行う。ここで、
被処理半導体基板１は、両面に酸化膜（ＳｉＯ2 ）の付
いたＳｉウェハであり、その裏面１ｂのみ酸化膜除去す
る場合であるので、上部ノズルである第１の吐出口２１
から第１の処理液３１として純水を吐出し、下部ノズル
である第２の吐出口２２から第２の処理液３２としてフ
ッ酸（ＨＦ）を吐出する。これにより、表面１ａにフッ
酸が回り込むことなく、裏面１ｂのみ、酸化膜除去が行
える。More specifically, in this embodiment, as shown in FIG. 1, only the edge of the semiconductor substrate 1 is spin-chucked.
While chucking at, while rotating around the rotation shaft 41, the processing liquid 31 is discharged from the first discharge port 2 which is the upper nozzle onto the wafer surface 1a of the semiconductor substrate 1 and the second nozzle which is the lower nozzle. The processing liquid 32 is discharged from the discharge port 22 to the wafer back surface 1b of the semiconductor substrate 1 to perform processing. here,
The semiconductor substrate 1 to be processed is a Si wafer having an oxide film (SiO 2 ) on both surfaces, and the oxide film is removed only on the back surface 1b thereof.
Pure water is discharged as the first processing liquid 31 from the above, and hydrofluoric acid (HF) is discharged as the second processing liquid 32 from the second discharge port 22 which is the lower nozzle. As a result, the oxide film can be removed only on the back surface 1b without the hydrofluoric acid flowing around the front surface 1a.
【００１２】半導体基板１の裏面１ｂのみの膜除去が必
要となるのは、例えば次のような場合である。即ち、例
えばＲＴＡ（Ｒａｐｉｄ Ｔｈｅｒｍａｌ Ａｎｎｅａ
ｌ）にてウェハをアニールする時の温度制御は、ウェハ
裏面からの熱放射を放射温度計にて測定して行ってい
る。この時、裏面の膜種によって補正をしなければなら
ない。ここで、裏面のみ膜を除去することで、基板材質
の放射率に固定して、温度測定が可能となる。よってこ
の場合、裏面のみの膜除去が有効になる。The film removal only on the back surface 1b of the semiconductor substrate 1 is required in the following cases, for example. That is, for example, RTA (Rapid Thermal Annea)
The temperature control at the time of annealing the wafer in l) is performed by measuring the heat radiation from the back surface of the wafer with a radiation thermometer. At this time, the correction must be made according to the film type on the back surface. Here, by removing the film only on the back surface, the temperature can be measured by fixing the emissivity of the substrate material. Therefore, in this case, removal of the film only on the back surface is effective.
【００１３】本実施例により、簡明な、少ない工程によ
り、短時間で効率的な処理が達成でき、かつ、汚染の問
題も生じなかった。According to the present embodiment, efficient processing can be achieved in a short time with a simple and small number of steps, and the problem of contamination does not occur.
【００１４】なお図１中、スピンチャック４は、３本程
度の数本の把持部で半導体基板１を把持し、それ以外は
空間となっているものを用いることにより、処理液３２
がスピンチャック４に邪魔されずに、基板１の裏面１ｂ
を処理できる。In FIG. 1, the spin chuck 4 holds the semiconductor substrate 1 by several gripping portions, such as about three gripping portions, and uses a space other than the gripping portion.
Of the substrate 1 without being disturbed by the spin chuck 4
Can be processed.
【００１５】実施例２ 実施例１では、シリコン上の酸化膜ＳｉＯ2 の裏面のみ
における除去を行ったが、この実施例では、シリコン半
導体基板上のシリコンナイトライド（ＳｉＮ）を除去す
るのに、本発明を用いた。本実施例では、第２の処理液
２２として、１５０℃前後のＨ3 ＰＯ4 を用いて、膜除
去を行った。その他は実施例１と同様に行った。本実施
例によって、実施例１と同様な効果が得られる。Example 2 In Example 1, the oxide film SiO 2 on silicon was removed only on the back surface. In this Example, however, silicon nitride (SiN) on the silicon semiconductor substrate was removed. The present invention was used. In this example, the film was removed by using H 3 PO 4 at around 150 ° C. as the second treatment liquid 22. Others were the same as in Example 1. According to this embodiment, the same effect as that of the first embodiment can be obtained.
【００１６】実施例３ 本実施例では、半導体基板上の多結晶Ｓｉ膜を除去する
ようにした。多結晶Ｓｉ膜除去用処理液としてＫＯＨ水
溶液を用い、その他は実施例１と同様にした。本実施例
でも、実施例１と同様な効果が得られる。Example 3 In this example, the polycrystalline Si film on the semiconductor substrate was removed. An aqueous KOH solution was used as the treatment liquid for removing the polycrystalline Si film, and the others were the same as in Example 1. Also in this embodiment, the same effect as that of the first embodiment can be obtained.
【００１７】[0017]
【発明の効果】本発明によれば、液体による処理を少な
い工程数で短い時間で行うことができ、生産性を高める
ことが可能で、また、コーティング材等を用いる必要が
なく、汚染等の問題もない。EFFECTS OF THE INVENTION According to the present invention, liquid treatment can be performed in a short time with a small number of steps, productivity can be improved, and it is not necessary to use a coating material or the like, and contamination such as contamination can be prevented. There is no problem.
【図１】実施例１の処理装置の構成図である。FIG. 1 is a configuration diagram of a processing apparatus according to a first embodiment.
１ 半導体基板（被処理半導体ウェハ） ２１ 第１の吐出口（上部ノズル） ２２ 第２の吐出口（下部ノズル） ３１ 第１の処理液 ３２ 第２の処理液 1 Semiconductor Substrate (Semiconductor Wafer to be Processed) 21 First Discharge Port (Upper Nozzle) 22 Second Discharge Port (Lower Nozzle) 31 First Processing Liquid 32 Second Processing Liquid
Claims (1)
の吐出口と、半導体基板の裏面に処理液を吐出する第２
の吐出口とを備え、 第１，第２の吐出口から同時に同一もしくは異なる処理
液を吐出して、半導体基板の表面及び裏面の処理を同時
に行う構成とした半導体基板の液体による処理装置。1. A first method for discharging a processing liquid onto the surface of a semiconductor substrate.
And a second discharge port for discharging the processing liquid to the back surface of the semiconductor substrate.
And an ejection port of the semiconductor substrate, and the same or different treatment liquids are ejected from the first and second ejection ports at the same time to simultaneously treat the front surface and the back surface of the semiconductor substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP04103737A JP3134483B2 (en) | 1992-03-30 | 1992-03-30 | Processing equipment for semiconductor substrates using liquids |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP04103737A JP3134483B2 (en) | 1992-03-30 | 1992-03-30 | Processing equipment for semiconductor substrates using liquids |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05283387A true JPH05283387A (en) | 1993-10-29 |
| JP3134483B2 JP3134483B2 (en) | 2001-02-13 |
Family
ID=14361942
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP04103737A Expired - Fee Related JP3134483B2 (en) | 1992-03-30 | 1992-03-30 | Processing equipment for semiconductor substrates using liquids |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3134483B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002164318A (en) * | 2000-11-27 | 2002-06-07 | Ishii Hyoki Corp | Substrate-spinning apparatus |
| JP2011187887A (en) * | 2010-03-11 | 2011-09-22 | Toyota Motor Corp | Method of manufacturing epitaxial wafer |
-
1992
- 1992-03-30 JP JP04103737A patent/JP3134483B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002164318A (en) * | 2000-11-27 | 2002-06-07 | Ishii Hyoki Corp | Substrate-spinning apparatus |
| JP2011187887A (en) * | 2010-03-11 | 2011-09-22 | Toyota Motor Corp | Method of manufacturing epitaxial wafer |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3134483B2 (en) | 2001-02-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |