JPH05160104A - Wet treatment method and equipment for semiconductor wafer - Google Patents

Abstract

PURPOSE:To make it possible to prevent a natural oxide film from being deposited on a semiconductor wafer surface and to maintain the safety with respect to the wet treatment method and equipment for eliminating an oxide film on the semiconductor wafer surface prior to the process of depositing an aluminum film. CONSTITUTION:A process of spraying a chemical solution to the surface of a semiconductor wafer 4 and removing oxide film and the like from the surface of the semiconductor 4 and a process of spraying pure water to the rear surface of the semiconductor wafer 4 for cleaning purpose are carried out in parallel, and the surface of the semiconductor wafer 4 is dried without washing with pure water.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wet processing method and a wet processing apparatus for a semiconductor wafer, and more particularly to a wet processing method and apparatus for removing an oxide film or the like on the surface of a semiconductor wafer prior to the step of depositing an aluminum film.

[0002]

2. Description of the Related Art While a semiconductor wafer is held by a wafer chuck and rotated, the surface of the semiconductor wafer is sprayed with buffered hydrofluoric acid or hydrofluoric acid to remove oxide films on the surface of the semiconductor wafer. Spray pure water on and to wash and spin dry.

[0003]

For safety, the surface of the semiconductor wafer is sprayed with a chemical solution and treated, and then the front surface and the back surface of the semiconductor wafer are sprayed with pure water for cleaning. A natural oxide film is deposited on the surface. As a result, when the aluminum film is deposited on the semiconductor wafer, a contact failure between the aluminum film and the semiconductor wafer occurs, and the number of particles on the surface of the semiconductor wafer increases.

An object of the present invention is to eliminate these drawbacks, and to prevent a natural oxide film from depositing on the surface of a semiconductor wafer after wet processing, and to keep the safety, and a method of the wet processing. And a wet processing apparatus used for the implementation.

[0005]

The above object is to spray a chemical solution onto the surface of a semiconductor wafer (4) to remove an oxide film or the like on the surface of the semiconductor wafer (4), and Wet treatment of a semiconductor wafer including a step of spraying pure water on the back surface of 4) in parallel with the step of drying, and drying the front surface of the semiconductor wafer (4) in a state where the chemical solution is attached. Method and wafer chuck (1) for holding and rotating a semiconductor wafer (4), chemical solution nozzle (2) for spraying a chemical solution on the surface of the semiconductor wafer (4), and back surface of the semiconductor wafer (4) Pure water nozzle that sprays pure water on the surface (3)
And a wet processing apparatus for semiconductor wafers.

[0006]

In the wet processing method for a semiconductor wafer according to the present invention, since the surface of the semiconductor wafer is treated with a chemical solution such as hydrofluoric acid and then dried without being washed with pure water, the surface of the semiconductor wafer is mostly Is kept covered with hydrogen, and the natural oxide film is less likely to deposit.

On the other hand, since the back surface of the semiconductor wafer is cleaned with pure water and the chemical liquid is not attached, the chemical liquid is prevented from adhering to a carrier device such as a wafer carrier or air tweezers or a semiconductor manufacturing device, and these devices are not attached. There is no danger even if they come into contact with each other, ensuring safety.

[0008]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A wet processing method and wet processing apparatus according to an embodiment of the present invention will be described below with reference to the drawings.

FIG. 1 shows a block diagram of a wet processing apparatus.
In the figure, 1 is a wafer chuck that holds and rotates a wafer, 2 is a chemical solution nozzle that sprays a chemical solution, 3 is a pure water nozzle that sprays pure water, and 4 is a semiconductor wafer to be wet-processed. is there.

The semiconductor wafer 4 is held and rotated by the wafer chuck 1, and the chemical solution nozzle 2 sprays buffered hydrofluoric acid on the surface of the semiconductor wafer 4 and at the same time the pure water nozzle 3 sprays pure water on the back surface of the semiconductor wafer 4. And wash. After the treatment with the buffered hydrofluoric acid is completed, the semiconductor wafer 4 is spin-dried, and again hydrofluoric acid is sprayed from the chemical solution nozzle 2 onto the front surface of the semiconductor wafer 4 and at the same time the pure water nozzle 3 onto the back surface of the semiconductor wafer 4 is purified water. Spray and wash. After the treatment with hydrofluoric acid is completed, the semiconductor wafer 4 is spin dried.

Instead of spraying pure water on the back surface of the semiconductor wafer 4 while spraying buffered hydrofluoric acid on the front surface of the semiconductor wafer 4, after spraying buffered hydrofluoric acid, the front and back surfaces of the semiconductor wafer 4 are sprayed. Alternatively, pure water may be sprayed on and washed. This is because the hydrofluoric acid treatment is performed after the buffered hydrofluoric acid treatment.

[0012]

As described above, in the method and apparatus for wet treating a semiconductor wafer according to the present invention, a chemical solution is sprayed on the surface of the semiconductor wafer to remove the oxide film on the surface, and then pure water is used. Since it is dried without cleaning, a natural oxide film is not deposited on the surface of the semiconductor wafer after the wet treatment, and particles are reduced. As a result, the contact with the aluminum film deposited on the semiconductor wafer is improved and the throughput is also improved. Further, since the back surface of the semiconductor wafer is washed with pure water, the safety in handling the semiconductor wafer is sufficiently ensured.

[Brief description of drawings]

FIG. 1 is a configuration diagram of a wet processing apparatus.

[Explanation of symbols]

 1 Wafer chuck 2 Chemical solution nozzle 3 Pure water nozzle 4 Semiconductor wafer

Claims (2)

[Claims] 1. A step of spraying a chemical solution onto the surface of a semiconductor wafer (4) to remove an oxide film or the like on the surface of the semiconductor wafer (4), and spraying pure water onto the back surface of the semiconductor wafer (4). A wet processing method for a semiconductor wafer, comprising: performing the cleaning step in parallel, and drying the surface of the semiconductor wafer (4) in a state where the chemical solution is attached. 2. A wafer chuck (1) which holds and rotates a semiconductor wafer (4), a chemical solution nozzle (2) which sprays a chemical solution on the surface of the semiconductor wafer (4), and a semiconductor wafer (4) A wet processing apparatus for a semiconductor wafer, comprising a pure water nozzle (3) for spraying pure water on the back surface.