KR970022534A - Photoresist pattern formation method - Google Patents

Photoresist pattern formation method Download PDF

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Publication number
KR970022534A
KR970022534A KR1019950034133A KR19950034133A KR970022534A KR 970022534 A KR970022534 A KR 970022534A KR 1019950034133 A KR1019950034133 A KR 1019950034133A KR 19950034133 A KR19950034133 A KR 19950034133A KR 970022534 A KR970022534 A KR 970022534A
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KR
South Korea
Prior art keywords
photoresist layer
deep
electron beam
photoresist pattern
exposing
Prior art date
Application number
KR1019950034133A
Other languages
Korean (ko)
Inventor
박병선
이진희
양전욱
박철순
Original Assignee
양승택
한국전자통신연구소
이준
한국전기통신공사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 양승택, 한국전자통신연구소, 이준, 한국전기통신공사 filed Critical 양승택
Priority to KR1019950034133A priority Critical patent/KR970022534A/en
Publication of KR970022534A publication Critical patent/KR970022534A/en

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  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

본 발명은 포토레지스트 패턴 형성방법에 관한 것으로서, 반도체 기판에 도포된 포토레지스트층에 가속 전압이 임계치 보다 작은 전자 빔으로 짧은 기간 동안 소정 두께까지 예비 노광하고 딥 UV를 전면에 조사하여 상기 예비 노광된 부분을 완전히 노광시킨다.The present invention relates to a method of forming a photoresist pattern, wherein the photoresist layer coated on a semiconductor substrate is preliminarily exposed to a predetermined thickness for a short period of time by an electron beam having an acceleration voltage smaller than a threshold, and irradiated with deep UV on the entire surface. The part is fully exposed.

따라서, 가속전압이 임계치 보다 작은 전자 빔에 의한 짧은 시간 동안의 예비 노광과 딥 UV에 의한 전면노광에 노광 시간을 감소하며 현상시 수직하는 포토레지스트 패턴을 얻을 수 있다.Therefore, it is possible to obtain a photoresist pattern vertical during development while reducing the exposure time to the preliminary exposure by the electron beam whose acceleration voltage is smaller than the threshold and the front exposure by the deep UV.

Description

포토레지스트 패턴 형성방법Photoresist pattern formation method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제3도는 본 발명에 따른 포토레지스트 패턴 형성방법을 나타내는 흐름도,3 is a flowchart showing a method of forming a photoresist pattern according to the present invention;

제4도는 본 발명에 따라 형성된 포토레지스트 패턴의 단면도.4 is a cross-sectional view of a photoresist pattern formed in accordance with the present invention.

Claims (3)

반도체 기판을 세정 및 건조하는 단계와, 상기 반도체 기판의 상부에 포토레지스트층을 형성하는 단계와, 상기 포토레지스트층에 형성할 패턴 형상을 따라 가속 전압이 임계치 보다 작은 전자 빔으로 상기 포토레지스트층의 소정 두께 정도 노광되게 예비 노광하는 단계와, 상기 포토레지스트층을 딥 UV로 전면 조사하여 상기 예비 노광된 부분을 완전히 노광하는 단계와, 상기 완전히 노광된 부분을 현상하여 패턴을 형성하는 단계를 포함하는 포토레지스트 패턴 형성방법.Cleaning and drying the semiconductor substrate, forming a photoresist layer on the semiconductor substrate, and forming an electron beam of the photoresist layer with an electron beam having an acceleration voltage smaller than a threshold along a pattern shape to be formed on the photoresist layer. Preliminarily exposing the photoresist layer to a predetermined thickness, totally exposing the preexposed portion by deeply irradiating the photoresist layer with deep UV, and developing the fully exposed portion to form a pattern; Photoresist pattern formation method. 제1항에 있어서, 상기 딥 UV는 파장이 190∼300nm 정도인 포토레지스트 패턴 형성방법.The method of claim 1, wherein the deep UV has a wavelength of about 190 nm to about 300 nm. 반포체 기판을 세정 및 건조하는 단계와, 상기 반도체 기판의 상부에 포토레지스트층을 형성하는 단계와, 상기 포토레지스트층을 딥 UV로 전면 조사하여 상기 포토레지스트층의 소정 두께 정도로 예비 노광시키는 단계와, 상기 전면이 예비 노광된 포토레지스트층에 형성할 패턴 형상을 따라 가속 전압이 임계치 보다 작은 전자 빔으로 완전히 노광하는 단계와, 상기 완전히 노광된 부분을 현상하여 패턴을 형성하는 단계를 포함하는 포토레지스트 패턴 형성방법.Cleaning and drying the half cell substrate, forming a photoresist layer on the semiconductor substrate, and exposing the photoresist layer with deep UV to pre-exposure to a predetermined thickness of the photoresist layer; And exposing the entire surface of the pre-exposed photoresist layer to an electron beam having an acceleration voltage smaller than a threshold along a pattern shape to be formed, and developing the fully exposed portion to form a pattern. Pattern formation method. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950034133A 1995-10-05 1995-10-05 Photoresist pattern formation method KR970022534A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950034133A KR970022534A (en) 1995-10-05 1995-10-05 Photoresist pattern formation method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950034133A KR970022534A (en) 1995-10-05 1995-10-05 Photoresist pattern formation method

Publications (1)

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KR970022534A true KR970022534A (en) 1997-05-30

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100436007B1 (en) * 1996-07-19 2004-10-14 삼성전자주식회사 Apparatus for improving chemical wetting on wafer and etch and etch method thereof
KR101143621B1 (en) * 2006-01-09 2012-05-09 에스케이하이닉스 주식회사 Method of e-beam exposure on photo mask

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100436007B1 (en) * 1996-07-19 2004-10-14 삼성전자주식회사 Apparatus for improving chemical wetting on wafer and etch and etch method thereof
KR101143621B1 (en) * 2006-01-09 2012-05-09 에스케이하이닉스 주식회사 Method of e-beam exposure on photo mask

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