KR970022534A - Photoresist pattern formation method - Google Patents
Photoresist pattern formation method Download PDFInfo
- Publication number
- KR970022534A KR970022534A KR1019950034133A KR19950034133A KR970022534A KR 970022534 A KR970022534 A KR 970022534A KR 1019950034133 A KR1019950034133 A KR 1019950034133A KR 19950034133 A KR19950034133 A KR 19950034133A KR 970022534 A KR970022534 A KR 970022534A
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- KR
- South Korea
- Prior art keywords
- photoresist layer
- deep
- electron beam
- photoresist pattern
- exposing
- Prior art date
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- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
본 발명은 포토레지스트 패턴 형성방법에 관한 것으로서, 반도체 기판에 도포된 포토레지스트층에 가속 전압이 임계치 보다 작은 전자 빔으로 짧은 기간 동안 소정 두께까지 예비 노광하고 딥 UV를 전면에 조사하여 상기 예비 노광된 부분을 완전히 노광시킨다.The present invention relates to a method of forming a photoresist pattern, wherein the photoresist layer coated on a semiconductor substrate is preliminarily exposed to a predetermined thickness for a short period of time by an electron beam having an acceleration voltage smaller than a threshold, and irradiated with deep UV on the entire surface. The part is fully exposed.
따라서, 가속전압이 임계치 보다 작은 전자 빔에 의한 짧은 시간 동안의 예비 노광과 딥 UV에 의한 전면노광에 노광 시간을 감소하며 현상시 수직하는 포토레지스트 패턴을 얻을 수 있다.Therefore, it is possible to obtain a photoresist pattern vertical during development while reducing the exposure time to the preliminary exposure by the electron beam whose acceleration voltage is smaller than the threshold and the front exposure by the deep UV.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
제3도는 본 발명에 따른 포토레지스트 패턴 형성방법을 나타내는 흐름도,3 is a flowchart showing a method of forming a photoresist pattern according to the present invention;
제4도는 본 발명에 따라 형성된 포토레지스트 패턴의 단면도.4 is a cross-sectional view of a photoresist pattern formed in accordance with the present invention.
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950034133A KR970022534A (en) | 1995-10-05 | 1995-10-05 | Photoresist pattern formation method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950034133A KR970022534A (en) | 1995-10-05 | 1995-10-05 | Photoresist pattern formation method |
Publications (1)
Publication Number | Publication Date |
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KR970022534A true KR970022534A (en) | 1997-05-30 |
Family
ID=66583468
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1019950034133A KR970022534A (en) | 1995-10-05 | 1995-10-05 | Photoresist pattern formation method |
Country Status (1)
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KR (1) | KR970022534A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100436007B1 (en) * | 1996-07-19 | 2004-10-14 | 삼성전자주식회사 | Apparatus for improving chemical wetting on wafer and etch and etch method thereof |
KR101143621B1 (en) * | 2006-01-09 | 2012-05-09 | 에스케이하이닉스 주식회사 | Method of e-beam exposure on photo mask |
-
1995
- 1995-10-05 KR KR1019950034133A patent/KR970022534A/en not_active Application Discontinuation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100436007B1 (en) * | 1996-07-19 | 2004-10-14 | 삼성전자주식회사 | Apparatus for improving chemical wetting on wafer and etch and etch method thereof |
KR101143621B1 (en) * | 2006-01-09 | 2012-05-09 | 에스케이하이닉스 주식회사 | Method of e-beam exposure on photo mask |
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E902 | Notification of reason for refusal | ||
E601 | Decision to refuse application |