KR980009532A - 원통형용기내의 유체대류 억제 방법 - Google Patents
원통형용기내의 유체대류 억제 방법 Download PDFInfo
- Publication number
- KR980009532A KR980009532A KR1019970034036A KR19970034036A KR980009532A KR 980009532 A KR980009532 A KR 980009532A KR 1019970034036 A KR1019970034036 A KR 1019970034036A KR 19970034036 A KR19970034036 A KR 19970034036A KR 980009532 A KR980009532 A KR 980009532A
- Authority
- KR
- South Korea
- Prior art keywords
- container
- vessel
- crystal growth
- compound semiconductor
- central axis
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 43
- 239000012530 fluid Substances 0.000 title claims abstract description 37
- 239000013078 crystal Substances 0.000 claims abstract description 67
- 239000007788 liquid Substances 0.000 claims abstract description 4
- 150000001875 compounds Chemical class 0.000 claims description 19
- 239000004065 semiconductor Substances 0.000 claims description 19
- 230000000737 periodic effect Effects 0.000 claims description 18
- 239000002994 raw material Substances 0.000 claims description 17
- 239000007787 solid Substances 0.000 claims description 17
- 230000005484 gravity Effects 0.000 claims description 12
- 238000005192 partition Methods 0.000 claims description 11
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims description 8
- 230000001133 acceleration Effects 0.000 claims description 8
- 229910052740 iodine Inorganic materials 0.000 claims description 8
- 239000011630 iodine Substances 0.000 claims description 8
- 239000003795 chemical substances by application Substances 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- 230000001629 suppression Effects 0.000 claims description 4
- 238000002109 crystal growth method Methods 0.000 claims 4
- 238000009833 condensation Methods 0.000 claims 1
- 230000005494 condensation Effects 0.000 claims 1
- 230000005486 microgravity Effects 0.000 abstract description 6
- 239000007789 gas Substances 0.000 description 18
- 125000006850 spacer group Chemical group 0.000 description 11
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 6
- 238000007789 sealing Methods 0.000 description 5
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B30/00—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
- C30B30/08—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions in conditions of zero-gravity or low gravity
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/08—Reaction chambers; Selection of materials therefor
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
- C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
Claims (9)
- 온도, 농도 또는 분압차이에 의한 밀도구배가 용기의 중심축을 따라 원통형 용기내에 채워진 기체 또는 액체에 부가될 때, 원통형용기내의 유체의 자연대류 발생 억제방법에 있어서, 용기를 수평하게 유지하여 중심축 주위로 용기를 회전시키는 것을 특징으로 하는 자연대류 발생 억제방법.
- 제1항에 있어서, 용기내에 고체를 마련하는 경우에, 고체는 용기내에 고정되어 용기와 함께 회전하는 것을 특징으로 하는 자연대류 발생 억제방법.
- 제1항에 있어서, 용기내에 고체를 마련하는 경우에, 고체는 망상조직의 분할판에 의하여 분리된 용기내의 일영역에 유지되며 다른 영역은 대류억제영역인 것을 특징으로 하는 자연대류 발생 억제방법.
- 제1항 내지 제3항 중 어느 한 항에 있어서, 기체를 용기에 채우는 용기는 다음 수학식을 만족시키는 것을 특징으로 하는 자연대류 발생 억제방법.(1/π)(g/2L)1/2〉f〉 (gLΔρ/ρ)/(1000ν)여기서 L은 용기의 직경, g는 중력가속도, ρ는 기체밀도, Δρ는 용기의 중심축을 따른 온도분포, 농도분포 또는 분압분포에 의한 기체의 최소밀도와 최대밀도사이의 차이이며 ν는 동점성 계수인 수학식 1을 만족할 수 있는 회전주파수 f로서 회전하는 것.
- 수송제로써 요오드를 사용하는 화학증기 수송법에 의하여 원통형용기에서 주기율표의 Ⅱ족 내지 Ⅵ족의 화합물 반도체 결정을 성장시키는 방법에 있어서, 용기를 수평으로 유지하며, 결정성장영역을 확보하도록 용기의 일단부에 고체원료을 유지하여 중심축을 따라 용기를 회전시킴으로서 결정성장을 수행하는 것을 특징으로 하는 주기율표의 Ⅱ족 내지 Ⅵ족의 화합물 반도체 결정성장방법.
- 제5항에 있어서, 고체원료를 용기의 일단부에 고정하여 용기와 함께 회전하는 것을 특징으로 하는 주기율표의 Ⅱ족 내지 Ⅵ족의 화합물 반도체 결정성장방법.
- 제5항에 있어서, 고체원료는 망상조직의 분할판을 이용하여 용기의 일단부에서 원료충전영역내에 유지되며 결정성장영역은 타단부쪽에 확보되고, 용기는 중심축 주위에서 회전되고, 결정성장은 결정성장영역에서 대류발생을 억제하는 동안 이루어지는 것을 특징으로 하는 주기율표의 Ⅱ족 내지 Ⅵ족의 화합물 반도체 결정 성장방법.
- 제7항에 있어서, 분할판의 두께는 분할판에 만들어진 구멍의 직경보다 큰 것을 특징으로 하는 주기율표의 Ⅱ족 내지 Ⅵ족의 화합물 반도체 결정성장방법.
- 제5항 내지 제8항 중 어느 한 항에 있어서, 용기는 다음 수학식을 만족시키는 것을 특징으로 하는 주기율표의 Ⅱ족 내지 Ⅵ족의 화합물 반도체 결정성장방법.(1/π)(g/2L)1/2〉f〉 (gLΔρ/ρ)/(1000ν)여기서 L은 용기의 직경, g는 중력가속도, ρ는 기체밀도, Δρ는 용기의 중심축을 따른 온도분포, 농도분포 또는 분압분포에 의한 기체의 최소밀도와 최대밀도 사이의 차이이며 ν는 동점성 계수인 수학식1을 만족할 수 있는 회전주파수 f로서 회전하는 것.※참고사항:최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP96-184B27 | 1996-07-15 | ||
JP18482796 | 1996-07-15 | ||
JP96-184827 | 1996-07-15 | ||
JP09141749A JP3129236B2 (ja) | 1996-07-15 | 1997-05-30 | 円筒形容器内流体の対流抑制方法 |
JP97-141749 | 1997-05-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR980009532A true KR980009532A (ko) | 1998-04-30 |
KR100228612B1 KR100228612B1 (ko) | 1999-11-01 |
Family
ID=26473921
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019970034036A Expired - Fee Related KR100228612B1 (ko) | 1996-07-15 | 1997-07-14 | 원통형용기내의 유체대류 억제 방법 |
Country Status (7)
Country | Link |
---|---|
US (1) | US6464781B2 (ko) |
EP (1) | EP0819785B1 (ko) |
JP (1) | JP3129236B2 (ko) |
KR (1) | KR100228612B1 (ko) |
CA (1) | CA2210033C (ko) |
DE (1) | DE69717018T2 (ko) |
TW (1) | TW490511B (ko) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010111473A1 (en) | 2009-03-26 | 2010-09-30 | Ii-Vi Incorporated | Sic single crystal sublimation growth method and apparatus |
CN109891601B (zh) * | 2016-09-02 | 2023-05-02 | 南洋理工大学 | 硫系化物薄膜、包括其的装置和形成该薄膜的方法 |
CN114059157B (zh) * | 2020-07-31 | 2022-12-13 | 清华大学 | 过渡金属硫属化合物晶体的制备方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2537731B1 (fr) | 1982-12-10 | 1986-01-17 | Thomson Csf | Procede de fabrication d'une fibre conservant la polarisation circulaire et dispositif mettant en oeuvre ce procede |
US4649859A (en) * | 1985-02-19 | 1987-03-17 | The United States Of America As Represented By The United States Department Of Energy | Reactor design for uniform chemical vapor deposition-grown films without substrate rotation |
FR2587731B1 (fr) * | 1985-09-23 | 1988-01-08 | Centre Nat Rech Scient | Procede et dispositif de depot chimique de couches minces uniformes sur de nombreux substrats plans a partir d'une phase gazeuse |
JPS6345198A (ja) * | 1986-04-23 | 1988-02-26 | Sumitomo Electric Ind Ltd | 多元系結晶の製造方法 |
JPS63185885A (ja) * | 1987-01-29 | 1988-08-01 | Sumitomo Electric Ind Ltd | 横型結晶成長装置 |
JPH0633218B2 (ja) * | 1987-12-08 | 1994-05-02 | 日本鋼管株式会社 | シリコン単結晶の製造装置 |
CA2016970A1 (en) * | 1990-05-16 | 1991-11-16 | Prasad N. Gadgil | Inverted diffusion stagnation point flow reactor for vapor deposition of thin films |
JPH04202082A (ja) * | 1990-11-30 | 1992-07-22 | Ishikawajima Harima Heavy Ind Co Ltd | ブリッジマン結晶成長方法 |
US5363796A (en) * | 1991-02-20 | 1994-11-15 | Sumitomo Metal Industries, Ltd. | Apparatus and method of growing single crystal |
JP3231050B2 (ja) * | 1991-06-24 | 2001-11-19 | シャープ株式会社 | 化合物半導体の結晶成長法 |
-
1997
- 1997-05-30 JP JP09141749A patent/JP3129236B2/ja not_active Expired - Fee Related
- 1997-07-10 CA CA002210033A patent/CA2210033C/en not_active Expired - Fee Related
- 1997-07-14 KR KR1019970034036A patent/KR100228612B1/ko not_active Expired - Fee Related
- 1997-07-14 DE DE69717018T patent/DE69717018T2/de not_active Expired - Fee Related
- 1997-07-14 TW TW086109901A patent/TW490511B/zh not_active IP Right Cessation
- 1997-07-14 EP EP97305182A patent/EP0819785B1/en not_active Expired - Lifetime
- 1997-07-15 US US08/893,223 patent/US6464781B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR100228612B1 (ko) | 1999-11-01 |
DE69717018D1 (de) | 2002-12-19 |
CA2210033C (en) | 2001-05-01 |
US6464781B2 (en) | 2002-10-15 |
EP0819785A1 (en) | 1998-01-21 |
JPH1081584A (ja) | 1998-03-31 |
TW490511B (en) | 2002-06-11 |
JP3129236B2 (ja) | 2001-01-29 |
DE69717018T2 (de) | 2003-07-31 |
CA2210033A1 (en) | 1998-01-15 |
EP0819785B1 (en) | 2002-11-13 |
US20010054375A1 (en) | 2001-12-27 |
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