KR980005988A - Wafer chip inspection probe processing method - Google Patents

Wafer chip inspection probe processing method Download PDF

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Publication number
KR980005988A
KR980005988A KR1019970051398A KR19970051398A KR980005988A KR 980005988 A KR980005988 A KR 980005988A KR 1019970051398 A KR1019970051398 A KR 1019970051398A KR 19970051398 A KR19970051398 A KR 19970051398A KR 980005988 A KR980005988 A KR 980005988A
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KR
South Korea
Prior art keywords
probe
wafer chip
chip inspection
processing method
tweezers
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KR1019970051398A
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Korean (ko)
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KR100274221B1 (en
Inventor
이석행
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이석행
주식회사 인테크전자
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Priority to KR1019970051398A priority Critical patent/KR100274221B1/en
Publication of KR980005988A publication Critical patent/KR980005988A/en
Application granted granted Critical
Publication of KR100274221B1 publication Critical patent/KR100274221B1/en

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R3/00—Apparatus or processes specially adapted for the manufacture or maintenance of measuring instruments, e.g. of probe tips
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
    • G01R1/06716—Elastic
    • G01R1/06722—Spring-loaded

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Measuring Leads Or Probes (AREA)

Abstract

본 발명은 웨이퍼를 검사하는 프로브카드(Probe Card)의 핵심 구성 품목인 웨이퍼 칩 검사용 탐침 가공방법에 관한 것이다.The present invention relates to a method for processing a wafer chip inspection probe, which is a key component of a probe card for inspecting a wafer.

본 발명의 웨이퍼 칩 검사용 탐침 가공방법의 구성은, Ni도금된 원재의 일정 부위를 제거하기 위한 Ni스트립 공정(10)과; Ni스트립이 이루어진 부위를 뾰족하게 하는 탐침 에칭 공정(20)과; 뾰족하게 된 탐침을 일정한 각도와 길이로 굽혀 프로브카드(Probe Card)에서 요구되는 탐침의 형태로 제조하는 탐침벤딩공정(30)과; 벤딩된 탐침의 선단부를 샌드 페이퍼로 갈아서 소망하는 직경을 얻는 탐침연마공정(40)과; 샌딩된 탐침을 재차 에칭하여 원하는 직경으로 미세 가공하는 소프트에칭공정(50)으로 가공을 행하는 것으로 이루어진 것이다.The structure of the wafer chip inspection probe processing method of the present invention includes a Ni strip process (10) for removing a predetermined portion of Ni-plated raw material; A probe etching process 20 for sharpening a portion where the Ni strip is made; A probe bending process 30 for bending the pointed probe at a predetermined angle and length to produce a probe in the form of a probe required by a probe card; A probe polishing step 40 of grinding the tip of the bent probe with sand paper to obtain a desired diameter; The sanded probe is etched again and processed by a soft etching process 50 for fine processing to a desired diameter.

Description

웨이퍼 칩 검사용 탐침 가공방법Wafer chip inspection probe processing method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도는 본 발명의 가공공정을 나타낸 플로우챠트도.1 is a flowchart showing a machining process of the present invention.

Claims (6)

Ni도금된 원재의 일정부위를 제거하기 위한 Ni스트립 공정(10)과; Ni스트립이 이루어진 부위를 뾰족하게 하는 탐침 에칭 공정(20)과; 뾰족하게 된 탐침을 일정한 각도와 길이로 굽혀 프로브카드(Probe Card)에서 요구되는 탐침의 형태로 제조하는 탐침벤딩공정(30)과; 벤딩된 탐침의 선단부를 샌드 페이퍼로 갈아서 소망하는 직경을 얻는 탐침연마공정(40)과; 샌딩된 탐침을 재차 에칭하여 원하는 직경으로 미세 가공하는 소프트에칭(50)으로 행하는 것을 특징으로 하는 웨이퍼 칩 검사용 탐침 가공방법.A Ni strip process (10) for removing a portion of Ni-plated raw material; A probe etching process 20 for sharpening a portion where the Ni strip is made; A probe bending process 30 for bending the pointed probe at a predetermined angle and length to produce a probe in the form of a probe required by a probe card; A probe polishing step 40 of grinding the tip of the bent probe with sand paper to obtain a desired diameter; A method for processing a wafer chip inspection probe, characterized in that the sanded probe is etched again and subjected to soft etching (50) for fine machining to a desired diameter. 제1항에 있어서, 상기 Ni스트립 공정은 질산과 증류수를 2:1의 비율로 혼합한 질산액에 1V로 조정한 AC 변압기의 리드선에 핀셋과 탄소봉을 연결하고 핀셋의 단부에는 원재를 협지하여 상온에서 30초 동안 함침한 후 꺼내어 증류수로 세척하는 것을 특징으로 하는 웨이퍼 칩 검사용 탐침 가공방법.The method of claim 1, wherein the Ni strip process is a nitric acid mixture of nitric acid and distilled water in a ratio of 2: 1, the tweezers and carbon rods are connected to the lead wire of the AC transformer adjusted to 1V and the raw material is sandwiched at the end of the tweezers at room temperature After impregnating for 30 seconds in the wafer chip inspection probe processing method, characterized in that to wash with distilled water. 제1항에 있어서, 상기 탐침에칭공정(20)은 NaOH 2g과 증류수 100㎖로 혼합한 에칭액에 10V로 조정한 변압기의 리드선에 핀셋과 탄소봉을 연결하고, 핀셋의 단부에는 Ni 스트립 공정을 실시한 원재를 협지하고 상온에서 60초 함침한 후 꺼내어 취출하여 증류수로 세척하는 공정으로 이루어진 것을 특징으로 하는 웨이퍼 칩 검사용 탐침 가공방법.The method of claim 1, wherein the probe etching step 20 is a raw material which is connected to the tweezers and the carbon rod to the lead wire of the transformer adjusted to 10V in an etchant mixed with 2g NaOH and 100ml of distilled water, and the Ni strip process is performed at the end of the tweezers The wafer chip inspection probe processing method, characterized in that consisting of the step of immersing at room temperature for 60 seconds, then taken out and washed with distilled water. 제1항에 있어서, 상기 탐침벤딩공정(30)은 벤딩 머신으로 소망하는 형상으로 성형하여 투영기로 벤딩된 원재의 길이와 굵기를 검사하고, 초음파 검사기에 넣고 3분 동안 세척한후 드라이기로 20초 동안 건조시키는 공정으로 이루어진 것을 특징으로 하는 웨이퍼 칩 검사용 탐침가공방법.The method of claim 1, wherein the probe bending process 30 is formed into a desired shape by a bending machine to inspect the length and thickness of the raw material bent by the projector, put into an ultrasonic tester and washed for 3 minutes, 20 seconds with a dryer Wafer chip inspection probe processing method comprising a step of drying during. 상기 탐침연마공정은 벤딩된 탐침이 삽입된 프로브카드를 샌딩 머신에 끼우고 샌딩 머신의 처크에 샌딩 페이퍼를 부착하여 탐침이 닿을 때까지 처크를 올려서 탐침의 끝은 소망의 직경으로 연마하는 공정으로 이루어진 것을 특징으로 하는 웨이퍼 칩 검사용 탐침가공방법.The probe polishing process consists of inserting a probe card into which a bent probe is inserted into a sanding machine, attaching sanding paper to the chuck of the sanding machine, and raising the chuck until the probe reaches the tip to polish the tip to a desired diameter. Probe processing method for wafer chip inspection, characterized in that. 상기 소프트에칭공정(50)은 NaOH 5g과 증류수 50㎖를 혼합한 에칭액에 10V로 조정한 DC 또는 AC 변압기의 +전극을 전극봉을 이용하여 샌딩된 탐침에 접속하고, -전극에는 핀셋을 연결하여 핀셋에 끼워진 솜에 탐침의 선단부를 20초동안 4~5회 반복하는 공정으로 이루어진 것을 특징으로 하는 웨이퍼 칩 검사용 탐침가공방법.In the soft etching process 50, the + electrode of a DC or AC transformer adjusted to 10 V is connected to a sanded probe using an electrode, and tweezers is connected to the electrode by tweezers. Probe processing method for a wafer chip inspection, characterized in that consisting of a step of repeating the tip portion of the probe 4 to 5 times for 20 seconds to the cotton inserted in the. ※참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: It is to be disclosed based on the initial application.
KR1019970051398A 1997-10-07 1997-10-07 Probe processing method for wafer chip inspection KR100274221B1 (en)

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KR1019970051398A KR100274221B1 (en) 1997-10-07 1997-10-07 Probe processing method for wafer chip inspection

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Application Number Priority Date Filing Date Title
KR1019970051398A KR100274221B1 (en) 1997-10-07 1997-10-07 Probe processing method for wafer chip inspection

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KR980005988A true KR980005988A (en) 1998-03-30
KR100274221B1 KR100274221B1 (en) 2000-12-15

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KR100700929B1 (en) 2005-09-26 2007-03-28 삼성전자주식회사 Apparatus for adhering a sandpaper
KR101302264B1 (en) 2007-02-22 2013-09-02 (주) 미코에스앤피 Probe structure and probe structure manufacturing method
KR100990097B1 (en) 2008-03-31 2010-10-29 (주)아이윈 Zero Insertion Force Connector

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