KR980005889A - 반도체 소자의 제조방법 - Google Patents

반도체 소자의 제조방법 Download PDF

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Publication number
KR980005889A
KR980005889A KR1019960025732A KR19960025732A KR980005889A KR 980005889 A KR980005889 A KR 980005889A KR 1019960025732 A KR1019960025732 A KR 1019960025732A KR 19960025732 A KR19960025732 A KR 19960025732A KR 980005889 A KR980005889 A KR 980005889A
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KR
South Korea
Prior art keywords
semiconductor device
intermediate layer
manufacturing
layer
silicide
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Application number
KR1019960025732A
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English (en)
Other versions
KR100197996B1 (ko
Inventor
염승진
유상호
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019960025732A priority Critical patent/KR100197996B1/ko
Priority to JP9162901A priority patent/JPH1064845A/ja
Publication of KR980005889A publication Critical patent/KR980005889A/ko
Application granted granted Critical
Publication of KR100197996B1 publication Critical patent/KR100197996B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
    • H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
    • H01L21/28052—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a silicide layer formed by the silicidation reaction of silicon with a metal layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
    • H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

본 발명은 살리사이드 구조를 가지는 반도체소자의 제조방법에 관한 것으로서, 통상의 MOSFET를 형성하고, 게이트전극과 소오스/드레인 영역의 상부에 Co 실리사이드막을 형성할 때, Co층의 하부에 산화성향이 강한 IVA족 원소로된 중간층을 개재시킨 후, 실리사이드 공정을 진행하여 상기 Hf 또는 Zr의 중간층이 Co와 Si의 균일한 반응을 방해하는 SiO2를 제거하여 평탄한 실리사이드/기판 계면을 얻을 수 있으며, 중간에 형성된 Hf(Zr)-Co 합금과 HfO2(ZrO2)층은 실리사이드 반응을 중간에서 제어하는 역할을 하여 Si의 과다한 소모를 방지하여 MOS전극부에 얕은 접합이 유지되도록 하였으므로, 공정수율 및 소자 동작의 신뢰성을 향상시킬 수 있다.

Description

반도체 소자의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 반도체소자의 제조방법을 설명하기 위한 개략도.

Claims (6)

  1. 실리콘 반도체기판상에 다결정 실리콘층 패턴을 게이트전극으로하며, 그 측벽에 절연 스페이서를 구비하는 MOSFET를 형성하는 공정과, 상기 구조의 전표면에 상기 실리콘 보다 산화성향이 높은 물질로된 중간층을 형성하는 공정과, 상기 중간층상에 Co층을 형성하는 공정과, 상기 Co층을 열처리하여 Co실리사이드막을 형성하는 공정을 구비하는 반도체소자의 제조방법.
  2. 제1항에 있어서, 상기 중간층을 IVA족 원소로 형성하는 것을 특징으로 하는 반도체소자의 제조방법.
  3. 제2항에 있어서, 상기 중간층을 Hf 또는 Zr으로 형성하는 것을 특징으로 하는 반도체소자의 제조방법.
  4. 제1항에 있어서, 상기 중간층을 스퍼터링 또는 CVD 방법으로 100~500Å 두께로 형성하는 것을 특징으로 하는 반도체소자의 제조방법.
  5. 제1항에 있어서, 상기 Co층을 100~300Å 두께로 형성하는 것을 특징으로 하는 반도체소자의 제조방법.
  6. 제1항에 있어서, 상기 열처리 공정을 급속열처리 방법으로 500~900℃에서 실시하는 것을 특징으로 하는 반도체소자의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960025732A 1996-06-29 1996-06-29 반도체 소자의 제조방법 KR100197996B1 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1019960025732A KR100197996B1 (ko) 1996-06-29 1996-06-29 반도체 소자의 제조방법
JP9162901A JPH1064845A (ja) 1996-06-29 1997-06-19 半導体素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960025732A KR100197996B1 (ko) 1996-06-29 1996-06-29 반도체 소자의 제조방법

Publications (2)

Publication Number Publication Date
KR980005889A true KR980005889A (ko) 1998-03-30
KR100197996B1 KR100197996B1 (ko) 1999-06-15

Family

ID=19464730

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960025732A KR100197996B1 (ko) 1996-06-29 1996-06-29 반도체 소자의 제조방법

Country Status (2)

Country Link
JP (1) JPH1064845A (ko)
KR (1) KR100197996B1 (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE1015721A3 (nl) * 2003-10-17 2005-07-05 Imec Inter Uni Micro Electr Werkwijze voor het reduceren van de contactweerstand van de aansluitgebieden van een halfgeleiderinrichting.

Also Published As

Publication number Publication date
KR100197996B1 (ko) 1999-06-15
JPH1064845A (ja) 1998-03-06

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