KR980005709A - Process chamber cleaning method for semiconductor dry etching device - Google Patents

Process chamber cleaning method for semiconductor dry etching device Download PDF

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Publication number
KR980005709A
KR980005709A KR1019960020679A KR19960020679A KR980005709A KR 980005709 A KR980005709 A KR 980005709A KR 1019960020679 A KR1019960020679 A KR 1019960020679A KR 19960020679 A KR19960020679 A KR 19960020679A KR 980005709 A KR980005709 A KR 980005709A
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KR
South Korea
Prior art keywords
process chamber
metal material
cleaning method
wall
dry etching
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Application number
KR1019960020679A
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Korean (ko)
Other versions
KR100217324B1 (en
Inventor
이휘건
곽규환
Original Assignee
김광호
삼성전자 주식회사
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Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019960020679A priority Critical patent/KR100217324B1/en
Publication of KR980005709A publication Critical patent/KR980005709A/en
Application granted granted Critical
Publication of KR100217324B1 publication Critical patent/KR100217324B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture

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  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

반도체 건식식각장치의 공정챔버 내벽에 흡착되어 있는 오염물질을 제거 할 수 있는 세정방법이 개시되어 있다. 본 발명은 금속물질과 반응하여 증기압이 높은 물질을 생성하는 반응 가스를 사용하여 공정챔버 내부에 플라즈마를 형성하고, 플라즈마 상태에서 활성화된 상기 반응 가스와 상기 공정챔버 내벽에 흡착되어 있는 금속물질을 반응시켜 증기압이 높은 물질을 형성한 후 증발시켜 공정챔버 내벽으로부터 금속물질을 제거함을 특징으로 하여 이루어진다. 따라서 본 발명은 공정챔버 내벽에 흡착되어 있는 금속물질을 쉽게 제거함으로서 후속의 식각공정에서 웨이퍼가 오염되는 것을 방지할 수 있으며 식각공정의 안정화를 이룰 수 있는 효과가 있다.Disclosed is a cleaning method capable of removing contaminants adsorbed on an inner wall of a process chamber of a semiconductor dry etching apparatus. The present invention forms a plasma inside a process chamber using a reaction gas that reacts with a metal material to produce a material having a high vapor pressure, and reacts the reactant gas activated in a plasma state with a metal material adsorbed on an inner wall of the process chamber. It is characterized in that to form a high vapor pressure material and then evaporated to remove the metal material from the inner wall of the process chamber. Accordingly, the present invention can easily remove the metal material adsorbed on the inner wall of the process chamber to prevent the wafer from being contaminated in the subsequent etching process and stabilize the etching process.

Description

반도체 건식식각장치의 공정챔버 세정방법Process chamber cleaning method for semiconductor dry etching device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도는 본 발명에 따른 공정챔버 세정방법을 설명하기 위해 도시된 건식식각장치의 공정챔버의 개략도이다.1 is a schematic view of the process chamber of the dry etching apparatus shown to explain the process chamber cleaning method according to the present invention.

제2도는 본 발명에 따른 공정챔버 세정방법을 평가하기 위해 챔버 내벽 표면의 텅스텐을 탈착시켜 세정조건에 따른 텅스텐의 양을 측정하여 비교한 결과를 나타내는 도표이다.2 is a chart showing the result of comparing and measuring the amount of tungsten according to the cleaning conditions by desorbing the tungsten on the inner wall surface of the chamber to evaluate the process chamber cleaning method according to the present invention.

Claims (3)

금속물질과 반응하여 증기압이 높은 물질을 생성하는 반응 가스를 사용하여 공정챔버 내부에 플라즈마를 형성하고, 플라즈마 상태에서 활성화된 상기 반응 가스와 상기 공정챔버 내벽에 흡착되어 있는 금속물질을 반응시켜 증기압이 높은 물질을 형성한 후 증발시켜 공정챔버 내벽으로부터 금속물질을 제거함을 특징으로 하는 반도체건식 식각장치의 공정챔버 세정방법.Plasma is formed inside the process chamber using a reaction gas that reacts with the metal material to produce a substance having a high vapor pressure, and vapor pressure is reduced by reacting the reaction gas activated in the plasma state with the metal material adsorbed on the inner wall of the process chamber. The process chamber cleaning method of a semiconductor dry etching apparatus, characterized in that the metal material is removed from the inner wall of the process chamber by evaporation after forming a high material. 제1항에 있어서, 상기 반응가스는 염소가스와 산소가스가 혼합된 것을 특징으로 하는 상기 반도체 건식식각장치의 공정챔버 세정방법.The process chamber cleaning method of claim 1, wherein the reaction gas is a mixture of chlorine gas and oxygen gas. 제2항에 있어서, 상기 염소가스와 산소가스의 부피비는 95:5 내지 70:30인 것을 특징으로 하는 상기 반도체 건식식각장치의 공정챔버 세정방법.The process chamber cleaning method according to claim 2, wherein the volume ratio of the chlorine gas and the oxygen gas is 95: 5 to 70:30. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019960020679A 1996-06-10 1996-06-10 A cleaning method of etching chamber KR100217324B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960020679A KR100217324B1 (en) 1996-06-10 1996-06-10 A cleaning method of etching chamber

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960020679A KR100217324B1 (en) 1996-06-10 1996-06-10 A cleaning method of etching chamber

Publications (2)

Publication Number Publication Date
KR980005709A true KR980005709A (en) 1998-03-30
KR100217324B1 KR100217324B1 (en) 1999-09-01

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960020679A KR100217324B1 (en) 1996-06-10 1996-06-10 A cleaning method of etching chamber

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100602334B1 (en) * 1999-07-15 2006-07-14 주식회사 하이닉스반도체 A plasma cleaning method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100602334B1 (en) * 1999-07-15 2006-07-14 주식회사 하이닉스반도체 A plasma cleaning method

Also Published As

Publication number Publication date
KR100217324B1 (en) 1999-09-01

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