KR980005063A - Thermal redundancy circuit - Google Patents

Thermal redundancy circuit Download PDF

Info

Publication number
KR980005063A
KR980005063A KR1019960026514A KR19960026514A KR980005063A KR 980005063 A KR980005063 A KR 980005063A KR 1019960026514 A KR1019960026514 A KR 1019960026514A KR 19960026514 A KR19960026514 A KR 19960026514A KR 980005063 A KR980005063 A KR 980005063A
Authority
KR
South Korea
Prior art keywords
redundancy circuit
cell array
memory cell
address signal
thermal
Prior art date
Application number
KR1019960026514A
Other languages
Korean (ko)
Other versions
KR100233287B1 (en
Inventor
이종협
신광섭
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019960026514A priority Critical patent/KR100233287B1/en
Publication of KR980005063A publication Critical patent/KR980005063A/en
Application granted granted Critical
Publication of KR100233287B1 publication Critical patent/KR100233287B1/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation

Landscapes

  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)

Abstract

본 발명은 반도체 제조 과정에서, 메모리 제품 설계시에 반도체 장치의 불량 셀을 대체하기 위한 열(column) 리던던시 회로에 관한 것으로, 메모리 셀 어레이와, 상기 메모리 셀 어레이의 셀을 선택하기 위한 글로벌 워드라인과, 상기 메모리 셀 어레이의 셀에 정보를 입출력하기 위하여 열(column) 어드레스 신호 및 행(row) 어드레스 신호를 사용하여 비트라인을 선택하도록 구성한 것을 특징으로 하며, 작은 면적에 열 리던던시 회로를 구현함으로써 동일한 면적에 종래의 방법에 비해 더 많은 리페어 셀을 배치할 수 있기 때문에 수율 향상에 효과적이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a column redundancy circuit for replacing a defective cell of a semiconductor device in the course of designing a memory product in a semiconductor manufacturing process and includes a memory cell array and a global word line for selecting cells of the memory cell array And a bit line is selected using a column address signal and a row address signal for inputting / outputting information to / from the cell of the memory cell array. By implementing a thermal redundancy circuit with a small area Since more repair cells can be arranged in the same area as compared with the conventional method, it is effective in improving the yield.

Description

열 리던던시 회로Thermal redundancy circuit

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

제4도는 본 발명에 따른 열 리던던시 회로의 구성 예시도.FIG. 4 is a diagram showing a configuration example of a thermal redundancy circuit according to the present invention; FIG.

Claims (2)

반도체 장치의 불량 셀을 대체하기 위한 리던던시 회로에 있어서, 메로리 셀 어레이와, 상기 메모리 셀 어레이의 셀을 선택하기 위한 글로벌 워드라인과, 상기 메모리 셀 어레이의 셀에 정보를 입출력하기 위하여 열(coumn)어드레스 신호 및 행(row) 어드레스 신호를 사용하여 비트라인을 선택하도록 구성한 것을 특징으로 하는 열 리던던시 회로.A redundancy circuit for replacing a defective cell in a semiconductor device, the redundancy circuit comprising: a memory cell array; a global word line for selecting cells of the memory cell array; And a bit line is selected using an address signal and a row address signal. 제1항에 있어서, 상기 행 어드레스 신호는 최하위 비트인 것을 특징으로 하는 열 리던던시 회로.2. The thermal redundancy circuit of claim 1, wherein the row address signal is a least significant bit. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: It is disclosed by the contents of the first application.
KR1019960026514A 1996-06-29 1996-06-29 Semiconductor memory device having a repair column structure to reduce chip size KR100233287B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960026514A KR100233287B1 (en) 1996-06-29 1996-06-29 Semiconductor memory device having a repair column structure to reduce chip size

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960026514A KR100233287B1 (en) 1996-06-29 1996-06-29 Semiconductor memory device having a repair column structure to reduce chip size

Publications (2)

Publication Number Publication Date
KR980005063A true KR980005063A (en) 1998-03-30
KR100233287B1 KR100233287B1 (en) 1999-12-01

Family

ID=19465189

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960026514A KR100233287B1 (en) 1996-06-29 1996-06-29 Semiconductor memory device having a repair column structure to reduce chip size

Country Status (1)

Country Link
KR (1) KR100233287B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100447262B1 (en) * 1999-12-28 2004-09-07 주식회사 하이닉스반도체 A method for layout a rest cell of a memory device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100447262B1 (en) * 1999-12-28 2004-09-07 주식회사 하이닉스반도체 A method for layout a rest cell of a memory device

Also Published As

Publication number Publication date
KR100233287B1 (en) 1999-12-01

Similar Documents

Publication Publication Date Title
USRE32993E (en) Semiconductor memory device
KR930024021A (en) Column Redundancy of Semiconductor Memory Devices
KR960042765A (en) Memory Cell Test Control Circuit and Method of Semiconductor Memory Device
KR940016279A (en) Semiconductor memory device with improved redundancy efficiency
KR950015398A (en) Low Redundancy Circuit and Method in Semiconductor Memory Device with Double Low Decoder
KR890004334A (en) Semiconductor memory
KR940016282A (en) Roo Redundancy Circuit
KR940010113A (en) Fault Relief Circuit in Semiconductor Memory Device
KR970012708A (en) Integrated semiconductor memory device
KR960002368A (en) Semiconductor Memory Device with Redundancy Function
KR980005063A (en) Thermal redundancy circuit
KR860006875A (en) Semiconductor devices
KR960005625A (en) Semiconductor memory device for reducing test time and column selection transistor control method
KR970051427A (en) Semiconductor Memory Devices with Redundancy Efficiency
KR930003164A (en) Semiconductor Memory Redundancy Device
KR960036055A (en) Semiconductor memory
KR0120582B1 (en) Sub decoder logic in semiconductor memory device
KR960015902A (en) Device for repairing semiconductor memory device
KR970051430A (en) How to implement low redundancy
KR970071842A (en) A volatile semiconductor memory device having improved low redundancy efficiency
KR970051416A (en) Column Redundancy Circuit in Semiconductor Memory
KR970023457A (en) Extra Cell Selection Circuit in Semiconductor Memory Device
KR910013267A (en) Semiconductor memory device with spare array
KR970051443A (en) Semiconductor memory device with improved repair efficiency
KR880000963A (en) Semiconductor memory device

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20070827

Year of fee payment: 9

LAPS Lapse due to unpaid annual fee