KR970051427A - Semiconductor Memory Devices with Redundancy Efficiency - Google Patents
Semiconductor Memory Devices with Redundancy Efficiency Download PDFInfo
- Publication number
- KR970051427A KR970051427A KR1019950057041A KR19950057041A KR970051427A KR 970051427 A KR970051427 A KR 970051427A KR 1019950057041 A KR1019950057041 A KR 1019950057041A KR 19950057041 A KR19950057041 A KR 19950057041A KR 970051427 A KR970051427 A KR 970051427A
- Authority
- KR
- South Korea
- Prior art keywords
- redundancy
- semiconductor memory
- memory device
- circuit
- array
- Prior art date
Links
Landscapes
- For Increasing The Reliability Of Semiconductor Memories (AREA)
Abstract
면적을 증가시키지 않고, 리던던시 표율을 증가시키는 회로를 가지는 반도체 메모리 장치에 관하여 개사한다. 본 발명은 리던던시 회로를 포함하는 반도체 메모리 장치에 있어서, 리던던시 효율을 증가시키기 위하여 상기 리던던시 회로에 사용되는 조절 회로에 의하여 퓨즈 박스가 서로 인접한 어레이에 공유되어 인접한 어에이에 있는 리던던시 셀을 이용하여 특정한 어레이에서 발생한 불량 비트를 리페어할 수 있다. 따라서, 본 발명에 의하여 종래의 경우에 비하여 한 블록내에서 리페어할 수 있는 불량 비트 수를 증가시켜서 수율 향상에 기여한다.A semiconductor memory device having a circuit for increasing the redundancy mark without increasing the area is described. SUMMARY OF THE INVENTION The present invention relates to a semiconductor memory device including a redundancy circuit, wherein a fuse box is shared in an array adjacent to each other by a regulating circuit used in the redundancy circuit to increase redundancy efficiency. The bad bits that occur in the array can be repaired. Accordingly, the present invention increases the number of bad bits that can be repaired in one block as compared with the conventional case, thereby contributing to the yield improvement.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
제3도 내지 제5도는 본 발명에 따른 반도체 메모리 장치에서 사용하는 리던던시 설계를 보여주는 도면들이다.3 to 5 are diagrams illustrating a redundancy design for use in the semiconductor memory device according to the present invention.
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950057041A KR970051427A (en) | 1995-12-26 | 1995-12-26 | Semiconductor Memory Devices with Redundancy Efficiency |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950057041A KR970051427A (en) | 1995-12-26 | 1995-12-26 | Semiconductor Memory Devices with Redundancy Efficiency |
Publications (1)
Publication Number | Publication Date |
---|---|
KR970051427A true KR970051427A (en) | 1997-07-29 |
Family
ID=66618306
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950057041A KR970051427A (en) | 1995-12-26 | 1995-12-26 | Semiconductor Memory Devices with Redundancy Efficiency |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR970051427A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100364817B1 (en) * | 2001-02-02 | 2002-12-16 | 주식회사 하이닉스반도체 | Row Redundancy Circuit |
KR100486216B1 (en) * | 1997-11-06 | 2005-08-01 | 삼성전자주식회사 | Redundancy memory cell control circuit of semiconductor memory device |
KR100480567B1 (en) * | 1997-10-27 | 2005-09-30 | 삼성전자주식회사 | Semiconductor memory device |
KR20070038672A (en) * | 2005-10-06 | 2007-04-11 | 주식회사 하이닉스반도체 | Column repair circuit for semiconductor memory apparatus |
KR100784087B1 (en) * | 2006-05-04 | 2007-12-10 | 주식회사 하이닉스반도체 | Repair circuit of semiconductor memory device |
KR101038983B1 (en) * | 2005-06-28 | 2011-06-03 | 주식회사 하이닉스반도체 | Memory device with redundancy part |
US8854904B2 (en) | 2011-12-21 | 2014-10-07 | Hynix Semiconductor Inc. | Semiconductor memory device |
-
1995
- 1995-12-26 KR KR1019950057041A patent/KR970051427A/en not_active Application Discontinuation
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100480567B1 (en) * | 1997-10-27 | 2005-09-30 | 삼성전자주식회사 | Semiconductor memory device |
KR100486216B1 (en) * | 1997-11-06 | 2005-08-01 | 삼성전자주식회사 | Redundancy memory cell control circuit of semiconductor memory device |
KR100364817B1 (en) * | 2001-02-02 | 2002-12-16 | 주식회사 하이닉스반도체 | Row Redundancy Circuit |
KR101038983B1 (en) * | 2005-06-28 | 2011-06-03 | 주식회사 하이닉스반도체 | Memory device with redundancy part |
KR20070038672A (en) * | 2005-10-06 | 2007-04-11 | 주식회사 하이닉스반도체 | Column repair circuit for semiconductor memory apparatus |
KR100784087B1 (en) * | 2006-05-04 | 2007-12-10 | 주식회사 하이닉스반도체 | Repair circuit of semiconductor memory device |
US8854904B2 (en) | 2011-12-21 | 2014-10-07 | Hynix Semiconductor Inc. | Semiconductor memory device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR940016279A (en) | Semiconductor memory device with improved redundancy efficiency | |
KR920704304A (en) | Semiconductor memory device with redundancy | |
KR940012406A (en) | Low redundancy circuit with high integration and reliability and semiconductor memory device having same | |
KR940002863A (en) | Low Redundancy Circuit Sharing Fuse Box | |
ITMI922473A1 (en) | LINE REDUNDANCY CIRCUIT FOR A SEMICONDUCTOR MEMORY DEVICE. | |
KR960002796A (en) | Column Redundancy Device for Semiconductor Devices | |
KR940016282A (en) | Roo Redundancy Circuit | |
US6353570B2 (en) | Row redundancy circuit using a fuse box independent of banks | |
KR960002368A (en) | Semiconductor Memory Device with Redundancy Function | |
KR970051427A (en) | Semiconductor Memory Devices with Redundancy Efficiency | |
KR950009744A (en) | Semiconductor memory | |
KR960005625A (en) | Semiconductor memory device for reducing test time and column selection transistor control method | |
KR100385956B1 (en) | Semiconductor memory device having effective column redundancy scheme | |
KR100351902B1 (en) | Circuit of Column Redundancy Repair | |
KR930003164A (en) | Semiconductor Memory Redundancy Device | |
KR970051419A (en) | Low Redundancy Circuit in Semiconductor Memory Devices | |
KR970051170A (en) | Memory cell array and program method using the same | |
KR970051446A (en) | Redundancy Roo Decoder Circuit | |
KR960015902A (en) | Device for repairing semiconductor memory device | |
KR970051438A (en) | Semiconductor Memory Device with Low Redundancy Circuit | |
KR980005045A (en) | Redundancy Circuit of Semiconductor Memory Device | |
KR970051443A (en) | Semiconductor memory device with improved repair efficiency | |
KR950020754A (en) | Column redundancy circuit | |
KR19990000471A (en) | Column Redundancy Control Circuit of Semiconductor Memory Device | |
KR930003163A (en) | Semiconductor memory device with redundancy circuit |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WITN | Withdrawal due to no request for examination |