KR970051427A - Semiconductor Memory Devices with Redundancy Efficiency - Google Patents

Semiconductor Memory Devices with Redundancy Efficiency Download PDF

Info

Publication number
KR970051427A
KR970051427A KR1019950057041A KR19950057041A KR970051427A KR 970051427 A KR970051427 A KR 970051427A KR 1019950057041 A KR1019950057041 A KR 1019950057041A KR 19950057041 A KR19950057041 A KR 19950057041A KR 970051427 A KR970051427 A KR 970051427A
Authority
KR
South Korea
Prior art keywords
redundancy
semiconductor memory
memory device
circuit
array
Prior art date
Application number
KR1019950057041A
Other languages
Korean (ko)
Inventor
윤순병
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950057041A priority Critical patent/KR970051427A/en
Publication of KR970051427A publication Critical patent/KR970051427A/en

Links

Landscapes

  • For Increasing The Reliability Of Semiconductor Memories (AREA)

Abstract

면적을 증가시키지 않고, 리던던시 표율을 증가시키는 회로를 가지는 반도체 메모리 장치에 관하여 개사한다. 본 발명은 리던던시 회로를 포함하는 반도체 메모리 장치에 있어서, 리던던시 효율을 증가시키기 위하여 상기 리던던시 회로에 사용되는 조절 회로에 의하여 퓨즈 박스가 서로 인접한 어레이에 공유되어 인접한 어에이에 있는 리던던시 셀을 이용하여 특정한 어레이에서 발생한 불량 비트를 리페어할 수 있다. 따라서, 본 발명에 의하여 종래의 경우에 비하여 한 블록내에서 리페어할 수 있는 불량 비트 수를 증가시켜서 수율 향상에 기여한다.A semiconductor memory device having a circuit for increasing the redundancy mark without increasing the area is described. SUMMARY OF THE INVENTION The present invention relates to a semiconductor memory device including a redundancy circuit, wherein a fuse box is shared in an array adjacent to each other by a regulating circuit used in the redundancy circuit to increase redundancy efficiency. The bad bits that occur in the array can be repaired. Accordingly, the present invention increases the number of bad bits that can be repaired in one block as compared with the conventional case, thereby contributing to the yield improvement.

Description

리던던시 효율을 높인 반도체 메모리 장치Semiconductor Memory Devices with Redundancy Efficiency

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제3도 내지 제5도는 본 발명에 따른 반도체 메모리 장치에서 사용하는 리던던시 설계를 보여주는 도면들이다.3 to 5 are diagrams illustrating a redundancy design for use in the semiconductor memory device according to the present invention.

Claims (2)

리던던시 회로를 포함하는 반도체 메모리 장치에 있어서, 리던던시 효율을 증가시키기 위하여 상기 리던던시 회로에 사용되는 조절 회로에 의하여 퓨즈 박스가 서로 인접한 어레이에 공유되어 인접한 어레이에 있는 리던던시 셀을 이용하여 특정한 어레이에서 발생한 불량비트를 리페어할 수 있는 반도체 메모리 장치.In a semiconductor memory device including a redundancy circuit, a defect occurred in a specific array using redundancy cells in adjacent arrays in which fuse boxes are shared in adjacent arrays by a control circuit used in the redundancy circuit to increase redundancy efficiency. A semiconductor memory device capable of repairing bits. 리던던시 회로를 포함하는 반도체 메모리 장치에 있어서, 각 퓨즈 박스에서 리페어 신호를 제어 로직에 입력하고, 제어 로직의 출력은 로우 디커더와 리던던시 디코더에 사용하는 제어 로직을 이용하여 하나의 어레이어에서 각 어레이에 해당하는 퓨즈 박스 외에 다른 에레이어 해당하는 퓨즈 박스까지 모두 사용할 수 있는 것이 가능한 반도체 메모리 장치.A semiconductor memory device including a redundancy circuit, wherein a repair signal is input to control logic at each fuse box, and an output of the control logic is used in each array in one array using control logic used for a low decoder and a redundancy decoder. A semiconductor memory device in which a fuse box corresponding to other layers and a fuse box corresponding to other layers can be used. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950057041A 1995-12-26 1995-12-26 Semiconductor Memory Devices with Redundancy Efficiency KR970051427A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950057041A KR970051427A (en) 1995-12-26 1995-12-26 Semiconductor Memory Devices with Redundancy Efficiency

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950057041A KR970051427A (en) 1995-12-26 1995-12-26 Semiconductor Memory Devices with Redundancy Efficiency

Publications (1)

Publication Number Publication Date
KR970051427A true KR970051427A (en) 1997-07-29

Family

ID=66618306

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950057041A KR970051427A (en) 1995-12-26 1995-12-26 Semiconductor Memory Devices with Redundancy Efficiency

Country Status (1)

Country Link
KR (1) KR970051427A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100364817B1 (en) * 2001-02-02 2002-12-16 주식회사 하이닉스반도체 Row Redundancy Circuit
KR100486216B1 (en) * 1997-11-06 2005-08-01 삼성전자주식회사 Redundancy memory cell control circuit of semiconductor memory device
KR100480567B1 (en) * 1997-10-27 2005-09-30 삼성전자주식회사 Semiconductor memory device
KR20070038672A (en) * 2005-10-06 2007-04-11 주식회사 하이닉스반도체 Column repair circuit for semiconductor memory apparatus
KR100784087B1 (en) * 2006-05-04 2007-12-10 주식회사 하이닉스반도체 Repair circuit of semiconductor memory device
KR101038983B1 (en) * 2005-06-28 2011-06-03 주식회사 하이닉스반도체 Memory device with redundancy part
US8854904B2 (en) 2011-12-21 2014-10-07 Hynix Semiconductor Inc. Semiconductor memory device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100480567B1 (en) * 1997-10-27 2005-09-30 삼성전자주식회사 Semiconductor memory device
KR100486216B1 (en) * 1997-11-06 2005-08-01 삼성전자주식회사 Redundancy memory cell control circuit of semiconductor memory device
KR100364817B1 (en) * 2001-02-02 2002-12-16 주식회사 하이닉스반도체 Row Redundancy Circuit
KR101038983B1 (en) * 2005-06-28 2011-06-03 주식회사 하이닉스반도체 Memory device with redundancy part
KR20070038672A (en) * 2005-10-06 2007-04-11 주식회사 하이닉스반도체 Column repair circuit for semiconductor memory apparatus
KR100784087B1 (en) * 2006-05-04 2007-12-10 주식회사 하이닉스반도체 Repair circuit of semiconductor memory device
US8854904B2 (en) 2011-12-21 2014-10-07 Hynix Semiconductor Inc. Semiconductor memory device

Similar Documents

Publication Publication Date Title
KR940016279A (en) Semiconductor memory device with improved redundancy efficiency
KR920704304A (en) Semiconductor memory device with redundancy
KR940012406A (en) Low redundancy circuit with high integration and reliability and semiconductor memory device having same
KR940002863A (en) Low Redundancy Circuit Sharing Fuse Box
ITMI922473A1 (en) LINE REDUNDANCY CIRCUIT FOR A SEMICONDUCTOR MEMORY DEVICE.
KR960002796A (en) Column Redundancy Device for Semiconductor Devices
KR940016282A (en) Roo Redundancy Circuit
US6353570B2 (en) Row redundancy circuit using a fuse box independent of banks
KR960002368A (en) Semiconductor Memory Device with Redundancy Function
KR970051427A (en) Semiconductor Memory Devices with Redundancy Efficiency
KR950009744A (en) Semiconductor memory
KR960005625A (en) Semiconductor memory device for reducing test time and column selection transistor control method
KR100385956B1 (en) Semiconductor memory device having effective column redundancy scheme
KR100351902B1 (en) Circuit of Column Redundancy Repair
KR930003164A (en) Semiconductor Memory Redundancy Device
KR970051419A (en) Low Redundancy Circuit in Semiconductor Memory Devices
KR970051170A (en) Memory cell array and program method using the same
KR970051446A (en) Redundancy Roo Decoder Circuit
KR960015902A (en) Device for repairing semiconductor memory device
KR970051438A (en) Semiconductor Memory Device with Low Redundancy Circuit
KR980005045A (en) Redundancy Circuit of Semiconductor Memory Device
KR970051443A (en) Semiconductor memory device with improved repair efficiency
KR950020754A (en) Column redundancy circuit
KR19990000471A (en) Column Redundancy Control Circuit of Semiconductor Memory Device
KR930003163A (en) Semiconductor memory device with redundancy circuit

Legal Events

Date Code Title Description
WITN Withdrawal due to no request for examination