KR980003569A - Manufacturing Method of Semiconductor Gas Sensor - Google Patents

Manufacturing Method of Semiconductor Gas Sensor Download PDF

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Publication number
KR980003569A
KR980003569A KR1019960023186A KR19960023186A KR980003569A KR 980003569 A KR980003569 A KR 980003569A KR 1019960023186 A KR1019960023186 A KR 1019960023186A KR 19960023186 A KR19960023186 A KR 19960023186A KR 980003569 A KR980003569 A KR 980003569A
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KR
South Korea
Prior art keywords
oxide film
contact window
depositing
gas sensor
manufacturing
Prior art date
Application number
KR1019960023186A
Other languages
Korean (ko)
Other versions
KR0160554B1 (en
Inventor
이승환
Original Assignee
오상수
만도기계 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 오상수, 만도기계 주식회사 filed Critical 오상수
Priority to KR1019960023186A priority Critical patent/KR0160554B1/en
Publication of KR980003569A publication Critical patent/KR980003569A/en
Application granted granted Critical
Publication of KR0160554B1 publication Critical patent/KR0160554B1/en

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/28—Electrolytic cell components
    • G01N27/40—Semi-permeable membranes or partitions

Abstract

본 발명은 반도체 가스센서의 제조방법에 관한 것으로, 더욱 상세하게는 양면에 절연막이 형성된 실리콘기판의 일면에 일정한 온도로 발열되는 발열체를 증착하고, 그 윗면에 산화막을 증착시켜 상기 발열체의 발열에 의해 가스 흡탈착성능을 향상시킬 수 있도록 된 가스센서의 제조방법에 있어서, 상기 산화막(14)의 윗면의적정부분에 접촉창을 정의하고, 상기 접촉창이 정의되지 않은 산화막(14)의 일부분에는 알루미늄층(15)를 증착시키는 단계, 상기 알루미늄층(15)의 윗면에 산화막(16)을 증착한 뒤 적정부분에 접촉창을 형성하는 단계, 상기 산화막(16)에 정의된 접촉창에 가스감지막(7)을 증착하고 소정형상으로 패터닝하는 단계를 구비한 것을 특징으로 한다.The present invention relates to a method for manufacturing a semiconductor gas sensor, and more particularly, to deposit a heating element that generates heat at a constant temperature on one surface of a silicon substrate on which insulating films are formed on both surfaces, and deposits an oxide film on the upper surface thereof to generate heat by heating the heating element. In the method of manufacturing a gas sensor that can improve gas adsorption and desorption performance, a contact window is defined on an appropriate portion of the upper surface of the oxide film 14, and an aluminum layer is formed on a portion of the oxide film 14 in which the contact window is not defined. (15) depositing, depositing an oxide film 16 on the upper surface of the aluminum layer 15, and then forming a contact window in an appropriate portion, and forming a gas sensing film in the contact window defined in the oxide film 16. And 7) depositing and patterning to a predetermined shape.

Description

반도체 가스센서의 제조방법Manufacturing Method of Semiconductor Gas Sensor

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 종래 반도체 가스센서의 제조공정을 보인 단면도.1 is a cross-sectional view showing a manufacturing process of a conventional semiconductor gas sensor.

제2도는 본 발명에 따른 반도체 가스센서의 제조공정을 보인 단면도이다.2 is a cross-sectional view showing a manufacturing process of a semiconductor gas sensor according to the present invention.

Claims (1)

양면에 절연막이 형성된 실리콘 기판의 일면에 일정한 온도로 발열되는 발열체를 증착하고, 그 윗면에 산화막을 증착시켜 상기 발열체의 발열에 의해 가스 흡탈착성능을 향상시킬 수 있도록 된 가스센서의 제조방법에 있어서, 상기 산화막(14)의 윗면의 적정부분에 접촉창을 정의하고, 상기 접촉창이 정의되지 않은 산화막(14)의 일부분에는 알루미늄층(15)를 증착시키는 단계, 상기 알루미늄층(15)의 윗면에 산화막(16)을 증착한뒤 적정부분에 접촉창을 형성하는 단계, 상기 산화막(16)에 정의된 접촉창에 가스감지막(7)을 증착하고 소정형상으로 패터닝하는 단계를 구비한 것을 특징으로 하는 가스센서의 제조방법.In the method of manufacturing a gas sensor which can deposit a heating element that generates heat at a constant temperature on one surface of a silicon substrate having an insulating film on both sides, and an oxide film on the upper surface thereof to improve the gas adsorption and desorption performance by the heating of the heating element And defining a contact window at an appropriate portion of the upper surface of the oxide film 14, and depositing an aluminum layer 15 on a portion of the oxide film 14 in which the contact window is not defined, on the upper surface of the aluminum layer 15. After depositing the oxide film 16 to form a contact window in an appropriate portion, and depositing a gas sensing film 7 on the contact window defined in the oxide film 16 and patterning to a predetermined shape Method for producing a gas sensor. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019960023186A 1996-06-24 1996-06-24 Semiconductor gas sensor manufacturing method KR0160554B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960023186A KR0160554B1 (en) 1996-06-24 1996-06-24 Semiconductor gas sensor manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960023186A KR0160554B1 (en) 1996-06-24 1996-06-24 Semiconductor gas sensor manufacturing method

Publications (2)

Publication Number Publication Date
KR980003569A true KR980003569A (en) 1998-03-30
KR0160554B1 KR0160554B1 (en) 1999-05-01

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960023186A KR0160554B1 (en) 1996-06-24 1996-06-24 Semiconductor gas sensor manufacturing method

Country Status (1)

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KR (1) KR0160554B1 (en)

Also Published As

Publication number Publication date
KR0160554B1 (en) 1999-05-01

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