KR890008948A - Manufacturing method of nonvolatile semiconductor device - Google Patents

Manufacturing method of nonvolatile semiconductor device Download PDF

Info

Publication number
KR890008948A
KR890008948A KR870012325A KR870012325A KR890008948A KR 890008948 A KR890008948 A KR 890008948A KR 870012325 A KR870012325 A KR 870012325A KR 870012325 A KR870012325 A KR 870012325A KR 890008948 A KR890008948 A KR 890008948A
Authority
KR
South Korea
Prior art keywords
silicon nitride
film
semiconductor device
manufacturing
nonvolatile semiconductor
Prior art date
Application number
KR870012325A
Other languages
Korean (ko)
Other versions
KR910001192B1 (en
Inventor
최종완
박성식
최진석
Original Assignee
강진구
삼성반도체통신 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 강진구, 삼성반도체통신 주식회사 filed Critical 강진구
Priority to KR1019870012325A priority Critical patent/KR910001192B1/en
Publication of KR890008948A publication Critical patent/KR890008948A/en
Application granted granted Critical
Publication of KR910001192B1 publication Critical patent/KR910001192B1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42324—Gate electrodes for transistors with a floating gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Formation Of Insulating Films (AREA)
  • Non-Volatile Memory (AREA)

Abstract

내용 없음No content

Description

비휘발성 반도체 소자의 제조방법Manufacturing method of nonvolatile semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제 2 도는 본 발명의 비휘발성 반도체 소자의 단면도,2 is a cross-sectional view of a nonvolatile semiconductor device of the present invention,

제 3 도는 본 발명의 제조공정 단면도이다.3 is a cross-sectional view of the manufacturing process of the present invention.

Claims (5)

1,2차 폴리실리콘(50),(9)사이에 화학증착법에 의한 이산화 실리콘막(6)과 질화 실릴콘막(7)을 형성시키는 공정과, 일산화법에 의한 질화 실리콘 산화막(8)을 형성시키는 공정을 차례로 실행하여 게이트 절연층을 형성시킴을 특징으로 하는 비휘발성 반도체 소자의 제조방법.Forming a silicon dioxide film 6 and a silicon nitride film 7 by chemical vapor deposition between the first and second polysilicon 50, 9; and forming a silicon nitride oxide film 8 by a monoxide method. And sequentially forming the gate insulating layer. 제1항에 있어서, 이산화 실리콘막(6)을 426℃에서 200Å-300Å두께로 화학증착시킴을 특징으로 하는 비휘발성 반도체 소자의 제조방법.The method of manufacturing a nonvolatile semiconductor device according to claim 1, wherein the silicon dioxide film (6) is chemically deposited at a thickness of 200 kPa to 300 kPa at 426 ° C. 제1항에 있어서, 질화실리콘막(7)을 암모니아 개스와 디클로로 사이렌개스로 300밀리토르의 800℃에서 100Å-200Å의 두께로 화학증착 시킴을 특징으로 하는 비휘발성 반도체 소자의 제조방법.The method of manufacturing a nonvolatile semiconductor device according to claim 1, wherein the silicon nitride film (7) is chemically deposited with ammonia gas and dichloro siren gas at a thickness of 100 kPa to 200 kPa at 800 占 폚 of 300 millitorr. 제1항에 있어서, 질화실리콘 산화막(8) 형성시 질화실리콘막(7)을 1000℃의 스팀분위기로 10분간 열산화 시킴을 특징으로 하는 비휘발성 반도체 소자의 제조방법.The method of manufacturing a nonvolatile semiconductor device according to claim 1, wherein the silicon nitride film (7) is thermally oxidized for 10 minutes in a steam atmosphere at 1000 ° C when the silicon nitride oxide film (8) is formed. 화학증착법에 의한 이산화 실리콘막(6)과 질화 실리콘막(7), 열산화법에 의한 질화실리콘산화막(8)을 차례로 형성시켜 집적회로의 키패시터 절연층으로 사용하는 키패시터의 제조방법.A method for producing a key capacitor, wherein a silicon dioxide film (6) by a chemical vapor deposition method, a silicon nitride film (7), and a silicon nitride oxide film (8) by a thermal oxidation method are formed in this order and used as a key capacitor insulating layer of an integrated circuit. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019870012325A 1987-11-03 1987-11-03 Semiconductor device KR910001192B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019870012325A KR910001192B1 (en) 1987-11-03 1987-11-03 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019870012325A KR910001192B1 (en) 1987-11-03 1987-11-03 Semiconductor device

Publications (2)

Publication Number Publication Date
KR890008948A true KR890008948A (en) 1989-07-13
KR910001192B1 KR910001192B1 (en) 1991-02-25

Family

ID=19265740

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870012325A KR910001192B1 (en) 1987-11-03 1987-11-03 Semiconductor device

Country Status (1)

Country Link
KR (1) KR910001192B1 (en)

Also Published As

Publication number Publication date
KR910001192B1 (en) 1991-02-25

Similar Documents

Publication Publication Date Title
KR900002316A (en) Manufacturing Method of Semiconductor Device
KR890011081A (en) Integrated circuit manufacturing method
KR890003006A (en) Semiconductor device and manufacturing method thereof
JPH0536899A (en) Semiconductor device and manufacture thereof
KR950007123A (en) Method for manufacturing semiconductor device with memory capacitor
KR890008948A (en) Manufacturing method of nonvolatile semiconductor device
JP2982254B2 (en) Method for manufacturing semiconductor device
KR910010625A (en) Manufacturing Method of Semiconductor Device
KR950021639A (en) Capacitor Manufacturing Method of Semiconductor Device
KR940001346A (en) Method of manufacturing semiconductor device separator
KR930011111A (en) Contact manufacturing method using titanium silicide
KR980005455A (en) Gate electrode formation method of semiconductor device
KR920005351A (en) Device Separation Method of Semiconductor Device
KR930006932A (en) Semiconductor device and manufacturing method thereof and semiconductor device manufacturing system
KR890016597A (en) Manufacturing Method of O-N Structure Thin Film Using Rapid Heat Treatment Process
KR970052800A (en) Gate insulating film formation method
KR950009967A (en) Field oxide film formation method
KR970053987A (en) Capacitor Manufacturing Method of Semiconductor Device
KR960002634A (en) Gate dielectric film formation method of transistor
KR950021102A (en) Metal wiring formation method of semiconductor device
KR920015483A (en) Manufacturing method of insulating film
KR960026613A (en) Method for manufacturing device isolation oxide film of semiconductor device
KR890007397A (en) Method of manufacturing semiconductor device for suppressing hillock formation of metal film
KR930003327A (en) Gate oxide film manufacturing method
KR970054050A (en) Capacitor Manufacturing Method of Semiconductor Device

Legal Events

Date Code Title Description
A201 Request for examination
N231 Notification of change of applicant
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20020107

Year of fee payment: 12

LAPS Lapse due to unpaid annual fee