KR970702939A - 스패터링용 티타늄 타게트 및 그의 제조 방법(Titanium target for spattering and method of manufacturing same) - Google Patents

스패터링용 티타늄 타게트 및 그의 제조 방법(Titanium target for spattering and method of manufacturing same)

Info

Publication number
KR970702939A
KR970702939A KR1019960706146A KR19960706146A KR970702939A KR 970702939 A KR970702939 A KR 970702939A KR 1019960706146 A KR1019960706146 A KR 1019960706146A KR 19960706146 A KR19960706146 A KR 19960706146A KR 970702939 A KR970702939 A KR 970702939A
Authority
KR
South Korea
Prior art keywords
spattering
manufacturing same
titanium target
titanium
target
Prior art date
Application number
KR1019960706146A
Other languages
English (en)
Other versions
KR100292593B1 (ko
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=26371413&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=KR970702939(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed filed Critical
Publication of KR970702939A publication Critical patent/KR970702939A/ko
Application granted granted Critical
Publication of KR100292593B1 publication Critical patent/KR100292593B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/16—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of other metals or alloys based thereon
    • C22F1/18—High-melting or refractory metals or alloys based thereon
    • C22F1/183—High-melting or refractory metals or alloys based thereon of titanium or alloys based thereon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12806—Refractory [Group IVB, VB, or VIB] metal-base component

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
KR1019960706146A 1995-03-13 1996-03-12 스패터링용티타늄타게트및그의제조방법 KR100292593B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP95-81952 1995-03-13
JP8195295 1995-03-13
JP8032829A JP2984783B2 (ja) 1995-03-13 1996-01-25 スパッタリング用チタンターゲットおよびその製造方法
JP96-32829 1996-01-25
PCT/JP1996/000610 WO1996028583A1 (fr) 1995-03-13 1996-03-12 Cible de pulverisation en titane et procede permettant de produire cette cible

Publications (2)

Publication Number Publication Date
KR970702939A true KR970702939A (ko) 1997-06-10
KR100292593B1 KR100292593B1 (ko) 2001-06-15

Family

ID=26371413

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960706146A KR100292593B1 (ko) 1995-03-13 1996-03-12 스패터링용티타늄타게트및그의제조방법

Country Status (5)

Country Link
US (1) US5952086A (ko)
EP (1) EP0757116A4 (ko)
JP (1) JP2984783B2 (ko)
KR (1) KR100292593B1 (ko)
WO (1) WO1996028583A1 (ko)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6309595B1 (en) 1997-04-30 2001-10-30 The Altalgroup, Inc Titanium crystal and titanium
US6063254A (en) * 1997-04-30 2000-05-16 The Alta Group, Inc. Method for producing titanium crystal and titanium
US6024847A (en) * 1997-04-30 2000-02-15 The Alta Group, Inc. Apparatus for producing titanium crystal and titanium
US5993621A (en) * 1997-07-11 1999-11-30 Johnson Matthey Electronics, Inc. Titanium sputtering target
US6585870B1 (en) 2000-04-28 2003-07-01 Honeywell International Inc. Physical vapor deposition targets having crystallographic orientations
CN1836307A (zh) * 2003-06-20 2006-09-20 卡伯特公司 溅镀靶安装到垫板上的方法和设计
CN1856591B (zh) * 2003-09-26 2010-12-08 株式会社东芝 溅射靶及使用其的Si氧化膜的制造方法
US20080092806A1 (en) * 2006-10-19 2008-04-24 Applied Materials, Inc. Removing residues from substrate processing components
JP5718896B2 (ja) * 2010-03-11 2015-05-13 株式会社東芝 スパッタリングターゲットとその製造方法、および半導体素子の製造方法
KR101440712B1 (ko) * 2010-05-21 2014-09-17 스미토모 긴조쿠 고잔 가부시키가이샤 산화아연 소결체 타블렛 및 그의 제조 방법
SG11201504191RA (en) 2011-06-08 2015-07-30 Semiconductor Energy Lab Sputtering target, method for manufacturing sputtering target, and method for forming thin film
JP6011066B2 (ja) * 2012-06-28 2016-10-19 住友電気工業株式会社 半導体装置の製造方法
CN113073295B (zh) * 2021-03-15 2023-04-07 海朴精密材料(苏州)有限责任公司 一种钨溅射靶材坯料的制备方法及应用

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4820393A (en) * 1987-05-11 1989-04-11 Tosoh Smd, Inc. Titanium nitride sputter targets
US4838935A (en) * 1988-05-31 1989-06-13 Cominco Ltd. Method for making tungsten-titanium sputtering targets and product
US5160534A (en) * 1990-06-15 1992-11-03 Hitachi Metals Ltd. Titanium-tungsten target material for sputtering and manufacturing method therefor
JP2737470B2 (ja) * 1990-10-09 1998-04-08 日本電気株式会社 半導体装置の製造方法
US5234487A (en) * 1991-04-15 1993-08-10 Tosoh Smd, Inc. Method of producing tungsten-titanium sputter targets and targets produced thereby
DE69223479T2 (de) * 1991-09-27 1998-04-02 Hitachi Metals Ltd Target zum reaktiven Sputtern sowie Verfahren zur Bildung eines Films unter Verwendung des Targets
JPH05214521A (ja) * 1992-01-30 1993-08-24 Tosoh Corp チタンスパッタリングターゲット
JP3338476B2 (ja) * 1992-06-29 2002-10-28 住友チタニウム株式会社 スパッタリング用の金属Ｔｉターゲットの製造方法
US5772860A (en) * 1993-09-27 1998-06-30 Japan Energy Corporation High purity titanium sputtering targets
JP3413782B2 (ja) * 1995-03-31 2003-06-09 日立金属株式会社 スパッタリング用チタンタ−ゲットおよびその製造方法

Also Published As

Publication number Publication date
US5952086A (en) 1999-09-14
EP0757116A4 (en) 1997-05-21
JPH08311643A (ja) 1996-11-26
WO1996028583A1 (fr) 1996-09-19
EP0757116A1 (en) 1997-02-05
KR100292593B1 (ko) 2001-06-15
JP2984783B2 (ja) 1999-11-29

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Legal Events

Date Code Title Description
A201 Request for examination
N231 Notification of change of applicant
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
LAPS Lapse due to unpaid annual fee