KR970077262A - Back rinse device of semiconductor development facility - Google Patents

Back rinse device of semiconductor development facility Download PDF

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Publication number
KR970077262A
KR970077262A KR1019960014871A KR19960014871A KR970077262A KR 970077262 A KR970077262 A KR 970077262A KR 1019960014871 A KR1019960014871 A KR 1019960014871A KR 19960014871 A KR19960014871 A KR 19960014871A KR 970077262 A KR970077262 A KR 970077262A
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KR
South Korea
Prior art keywords
wafer
cleaning liquid
predetermined
back rinse
rinse apparatus
Prior art date
Application number
KR1019960014871A
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Korean (ko)
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KR100187442B1 (en
Inventor
백점곤
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019960014871A priority Critical patent/KR100187442B1/en
Publication of KR970077262A publication Critical patent/KR970077262A/en
Application granted granted Critical
Publication of KR100187442B1 publication Critical patent/KR100187442B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02082—Cleaning product to be cleaned
    • H01L21/0209—Cleaning of wafer backside

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

현상공정에 있어서 공급된 현상액이 웨이퍼의 밑면 소정 부위에 남게 되는 것을 방지하도록 하는 반도체 현상설비의 백린스 장치에 관한 것이다.To a back rinse apparatus of a semiconductor developing facility for preventing a developer supplied in a developing process from remaining on a predetermined portion of a bottom surface of a wafer.

본 발명은 웨이퍼의 하측으로 소정 간격 이격되어 진공척의 머리부와 기둥 외측 부위를 커버하는 형태로 설치되고, 내부에 형성된 세정액 공급통로가 상측으로 관통된 형상의 분출구를 이루는 반도체 현상설비의 백린스 장치에 있어서, 상측부가 소정 두께와 높이로 돌출된 환형돌기와 이 환형돌기의 외측 끝단부에 연이어 하측으로 소정의 경사 각도를 이루는 경사면과 상기 경사면 소정 부위에 소정의 각도를 가지며 내부의 세정액 공급통로와 관통 연결되는 세정액 분출구가 형성됨을 특징으로 한다.The present invention relates to a back rinse apparatus of a semiconductor developing apparatus, which is provided in a form to cover a head portion of a vacuum chuck and an outer side of a column at a predetermined distance from a lower side of a wafer and forms a jet port having a cleaning liquid supply passage formed therein, An upper portion having an annular projection protruding at a predetermined thickness and height and an inclined surface having a predetermined inclined angle in succession to an outer end of the annular projection and a tapered surface having a predetermined angle to the predetermined portion of the inclined surface, And a cleaning liquid jet port connected to the cleaning liquid jet port is formed.

따라서, 웨이퍼 밑면에 공급되는 세정액과 질소 가스의 공급 압력에 관계없이 웨이퍼 밑면 주연에 맺힌 상태로 있게 되는 현상액을 용이하게 제거하는 효과가 있다.Therefore, there is an effect of easily removing the developer which is in a state of being formed at the periphery of the bottom surface of the wafer regardless of the supply pressure of the cleaning liquid and the nitrogen gas supplied to the bottom surface of the wafer.

Description

반도체 현상설비의 백린스 장치Back rinse device of semiconductor development facility

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

제2도는 본 발명에 따른 반도체 현상설비의 백린스 장치의 일 실시예를 나타낸 단면도이다.FIG. 2 is a cross-sectional view showing an embodiment of a back rinse apparatus of a semiconductor development facility according to the present invention.

Claims (6)

웨이퍼의 하측으로 소정 간격 이격되어 진공척의 머리부와 기둥 외측 부위를 커버하는 형태로 설치되고, 내부에 형성된 세정액 공급통로가 상측으로 관통된 형성의 분출구를 이루는 반도체 현상설비의 백린스 장치에 있어서, 상측부가 소정 두께와 높이로 돌출된 환형돌기와, 이 환형돌기의 외측 끝단부에 연이어 하측으로 소정의 경사 각도를 이루는 경사면과, 상기 경사면 소정 부위에 소정의 각도를 가지며 내부의 세정액 공급통로와 관통 연결되는 세정액 분출구가 형성됨을 특징으로 하는 반도체 현상설비의 백린스 장치.A back rinse apparatus of a semiconductor developing facility provided in a form to cover a head portion of a vacuum chuck and an outer side of a column at a predetermined distance from the lower side of the wafer and forming a jetting port through which a rinsing liquid supply passage formed therein penetrates upward, An upper surface of the annular protrusion protruding at a predetermined thickness and height, an inclined surface extending downwardly from the outer end of the annular protrusion at a predetermined angle, and an inclined surface having a predetermined angle to the predetermined surface of the inclined surface, Wherein the cleaning liquid jetting port is formed on the back surface of the semiconductor developing facility. 제1항에 있어서, 상기 환형돌기는 2∼3㎜의 돌출된 높이로 형성됨을 특징으로 하는 상기 반도체 현상설비의 백린스 장치.[2] The back rinse apparatus of claim 1, wherein the annular protrusion is formed at a protruding height of 2 to 3 mm. 제1항에 있어서, 상기 경사면의 각도는 공급된 세정액이 반사되어 떨어지는 것을 외측으로 흐르도록 15∼20 의 경사로 형성됨을 특징으로 하는 상기 반도체 현상설비의 백린스 장치.The back rinse apparatus as claimed in claim 1, wherein the angle of the inclined surface is formed to be 15 to 20 inclined so that the supplied cleaning liquid is reflected and dropped to the outside. 제1항에 있어서, 상기 분출구가 이루는 각도는 공급되는 세정액이 웨이퍼의 외측 방향으로 향하도록 웨이퍼 밑면에 대해 60∼70 의 경사각으로 형성됨을 특징으로 하는 상기 반도체 현상설비의 백린스 장치.The back rinse apparatus as claimed in claim 1, wherein the angle formed by the jet port is formed at an inclination angle of 60 to 70 with respect to the bottom surface of the wafer so that the supplied cleaning liquid is directed toward the outer side of the wafer. 제4항에 있어서, 상기 분출구는 웨이퍼의 주연에서 중심 방향으로 10∼12㎜ 이격된 위치에 세정액을 공급하도록 형성됨을 특징으로 하는 상기 반도체 현상설비의 백린스 장치.5. The back rinse apparatus of claim 4, wherein the jet port is formed to supply the cleaning liquid to a position spaced by 10 to 12 mm from the periphery of the wafer toward the center. 제4항 또는 제5항에 있어서, 상기 분출구 구멍의 직경은 0.8∼1.2㎜임을 특징으로 하는 상기 반도체 현상설비의 백린스 장치.The back rinse apparatus according to claim 4 or 5, wherein the diameter of the jet hole is 0.8 to 1.2 mm. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: It is disclosed by the contents of the first application.
KR1019960014871A 1996-05-07 1996-05-07 Back rinsing apparatus of semiconductor process KR100187442B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960014871A KR100187442B1 (en) 1996-05-07 1996-05-07 Back rinsing apparatus of semiconductor process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960014871A KR100187442B1 (en) 1996-05-07 1996-05-07 Back rinsing apparatus of semiconductor process

Publications (2)

Publication Number Publication Date
KR970077262A true KR970077262A (en) 1997-12-12
KR100187442B1 KR100187442B1 (en) 1999-04-15

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020032058A (en) * 2000-10-25 2002-05-03 고석태 Substrate processing apparatus

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100379998B1 (en) * 2000-08-30 2003-04-14 한국디엔에스 주식회사 Apparatus for treating thin object
JP5999972B2 (en) * 2012-05-10 2016-09-28 株式会社ディスコ Holding table

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020032058A (en) * 2000-10-25 2002-05-03 고석태 Substrate processing apparatus

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Publication number Publication date
KR100187442B1 (en) 1999-04-15

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